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    GT30J324 Price and Stock

    Toshiba America Electronic Components GT30J324

    2 devices, VCES=600V, IC=30A - Rail/Tube (Alt: GT30J324)
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    Avnet Americas GT30J324 Tube 50
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    Quest Components GT30J324 2,402
    • 1 $8.1
    • 10 $8.1
    • 100 $8.1
    • 1000 $2.97
    • 10000 $2.835
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    Toshiba America Electronic Components GT30J324Q

    Trans IGBT Chip N-CH 600V 30A 3-Pin(3+Tab) TO-3PN - Bulk (Alt: GT30J324(Q))
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas GT30J324Q Bulk 50
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    GT30J324 Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT30J324 Toshiba Insulated Gate Bipolar Transistor Silicon N Channel IGBT Original PDF
    GT30J324 Toshiba High-Speed IGBTs Original PDF
    GT30J324 Toshiba IGBT Chip, N Channel, 600V, 2-16C1C, 3-Pin Original PDF
    GT30J324 Toshiba Discrete IGBTs Original PDF
    GT30J324(Q) Toshiba IGBTs - Single, Discrete Semiconductor Products, IGBT 600V 30A 170W TO3PN Original PDF
    GT30J324Q Toshiba TRANS IGBT CHIP N-CH 600V 30A 3(2-16C1C) Original PDF

    GT30J324 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    GT30J324

    Abstract: No abstract text available
    Text: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT30J324 GT30J324

    GT30J324

    Abstract: No abstract text available
    Text: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT30J324 GT30J324

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA Preliminary GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT30J324 High Power Switching Applications Fast Switching Applications ● ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS


    Original     		PDF GT30J324 50kHz Tj125 GT30J324

    dc ac inverter circuit igbt

    Abstract: IGBT control circuit for inverter welding inverter circuit igbt ac motor speed control IGBT for welding inverter inverter welding machine circuit inverter circuit dc to ac igbt for dc to ac inverter GT30J324 dc inverter welding
    Text: IGBT for High Power and Fast Switching < GT30J324 > • Inverter circuit Inverter DC ● Enhancement-mode type for easy to use ● Operating frequency up to 50 kHz ● High speed: tf = 0.05 µs ● Low switching loss: Eon = 1.0 mJ, Eoff = 0.8 mJ about 30% lower than Toshiba current IGBT


    Original     		PDF GT30J324 GT30J324 GT30J301 dc ac inverter circuit igbt IGBT control circuit for inverter welding inverter circuit igbt ac motor speed control IGBT for welding inverter inverter welding machine circuit inverter circuit dc to ac igbt for dc to ac inverter dc inverter welding

    GT30J324

    Abstract: No abstract text available
    Text: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • The 4th generation · Enhancement-mode · Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT30J324 GT30J324

    Untitled

    Abstract: No abstract text available
    Text: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT30J324

    Untitled

    Abstract: No abstract text available
    Text: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT30J324

    GT30J324

    Abstract: No abstract text available
    Text: GT30J324 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT30J324 ○ 大電力スイッチング用 ○ 高速スイッチング用 • • • • • 単位: mm 第 4 世代品 取り扱いが簡単なエンハンスメントタイプ


    Original     		PDF GT30J324 2-16C1C 20070701-JA GT30J324

    GT30J324

    Abstract: No abstract text available
    Text: GT30J324 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J324 High Power Switching Applications Fast Switching Applications Unit: mm • The 4th generation • Enhancement-mode • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT30J324 GT30J324

    circuit diagram of luminous inverter

    Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
    Text: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances


    Original     		PDF BCE0013C circuit diagram of luminous inverter TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG

    GT30J124

    Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
    Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.


    Original     		PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123

    STR-G6551

    Abstract: STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312
    Text: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects major changes since last revision


    Original     		PDF 2002-Sep. STR-G6551 STR-F6654 g6551 TDA16822 STR-F6653 strg6551 IGBT cross reference KA5M0565R TOP224Y equivalent BUP 312

    TB6604FTG

    Abstract: TB6604 full automatic Washing machines circuit diagram tb6603 TB6603FTG Toshiba brushless dc motor driver TB6604FTG,8,EL
    Text: 2011-9 SYSTEM CATALOG Motor Solutions Guide SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g Motor Driver Subsystem Example Toshiba’s Semiconductors for Motor Control Controller Interface Driver Power Drive Circuit Pre-driver


    Original     		PDF SCE0020D TB6604FTG TB6604 full automatic Washing machines circuit diagram tb6603 TB6603FTG Toshiba brushless dc motor driver TB6604FTG,8,EL

    GT30F124

    Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
    Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122

    GT30F131

    Abstract: GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF SCE0004L TTC4116* 2SC4118 TTA1586* 2SA1588 2SC4117 2SA1587 2SC5233 2SC4738 2SA1832 GT30F131 GT30F124 TK18A60V smd m5 transistor 6-pin SMD TRANSISTOR H2A NPN GT50N322 MARKING SMD PNP TRANSISTOR h2a GT30J124 *30f124 TPCP8R01

    GT15J301

    Abstract: gt10j321 GT15J321 GT20J321 GT30J121 GT30J324 GT50J121 GT50J325 GT5J121 GT5J321
    Text: New Product Guide High-Speed IGBTs NEW PRODUCT GUIDE 1. Features and Structure Features of high-speed IGBT FS Series Combines injection optimization, wafer-thinning technology and trench technology. • Low VCE(sat) as a result of trench technology • Low VCE(sat) and higher speed due to thin wafer


    Original     		PDF

    IGBT GT30F124

    Abstract: IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075
    Text: 東芝半導体製品総覧表 2011 年 1 月版 トランジスタ バイポーラ小信号トランジスタ 接合形 FET 異種混載複合デバイス MOSFET バイポーラパワートランジスタ 高周波バイポーラ小信号トランジスタ


    Original     		PDF SCJ0004R SC-43) 2SC1815 2SC732TM 2SC1959 2SA1015 2SC2240 2SA970 2SC1815 2SA1015 IGBT GT30F124 IGBT GT30J124 GT30F124 GT30J124 GT50N322 tk25e06k3 TPCP8R01 TK12A10K3 GT30G124 2SK3075

    GT30J126

    Abstract: GT30J324 TOSHIBA GT30 GT30 J126 GT30 toshiba
    Text: GT30J126 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT30J126 ○ 大電力スイッチング用 ○ 高速スイッチング用 単位: mm • 第 4 世代品 • 取り扱いが簡単なエンハンスメントタイプ


    Original     		PDF GT30J126 2-16F1A 20070701-JA GT30J126 GT30J324 TOSHIBA GT30 GT30 J126 GT30 toshiba

    GT30J121

    Abstract: GT30J324
    Text: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT30J121 GT30J121 GT30J324

    IGBT GT30J121

    Abstract: GT30J121 GT30J324
    Text: GT30J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J121 High Power Switching Applications Fast Switching Applications Unit: mm • Fourth-generation IGBT • Enhancement mode type • Fast switching FS : Operating frequency up to 50 kHz (reference)


    Original     		PDF GT30J121 IGBT GT30J121 GT30J121 GT30J324

    s5j53

    Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
    Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require


    Original     		PDF E0010A BCE0010A 3503C-0109 s5j53 S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A

    tb6584

    Abstract: TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram
    Text: 2008-9 SYSTEM CATALOG Home Appliances s e m i c o n d u c t o r h t tp://w w w.se micon.tosh iba.co.jp/e n g Air Conditioners Induction Rice Cookers C O N T E N T S Characteristics of Motor Control Devices. 3 Dishwashers


    Original     		PDF TLCS-870/C1 SCE0013B E-28831 SCE0013C tb6584 TK8A50D equivalent circuit diagram of luminous inverter circuit diagram of toshiba washing machine gt35j321 GT50N322 full automatic Washing machines microcontroller TB6574 samsung washing machine circuit diagram washing machine control panel circuit diagram

    GT30F124

    Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123
    Text: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs


    Original     		PDF 2010/9SCE0004K SC-43) 2SC1815 700the GT30F124 TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123

    induction cooker circuit diagram

    Abstract: TC7600FNG induction cooker block diagrams tmp89fw24 TB6586BFG igbt induction cooker complete circuit diagram induction heater mosfet induction heater TB6584AFNG ULN2003APG diagram induction cooker
    Text: 2010-9 SYSTEM CATALOG Home Appliances h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g Induction Rice Cookers Refrigerators Air Conditioners Dishwashers Automatic Washing Machines Characteristics of Motor Control Devices . 3


    Original     		PDF SCE0013D induction cooker circuit diagram TC7600FNG induction cooker block diagrams tmp89fw24 TB6586BFG igbt induction cooker complete circuit diagram induction heater mosfet induction heater TB6584AFNG ULN2003APG diagram induction cooker