Untitled
Abstract: No abstract text available
Text: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)
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GT50J121
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GT50J121
Abstract: GT50J325
Text: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • The 4th generation • Enhancement-mode • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)
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GT50J121
GT50J121
GT50J325
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GT50J121
Abstract: GT50J325
Text: GT50J121 東芝伝導度変調型電界効果トランジスタ シリコンNチャネルIGBT GT50J121 ○ 大電力スイッチング用 ○ 高速スイッチング用 単位: mm • 第 4 世代品 • 取り扱いが簡単なエンハンスメントタイプ
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GT50J121
2-21F2C
20070701-JA
GT50J121
GT50J325
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Untitled
Abstract: No abstract text available
Text: GT50J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J122 Current Resonance Inverter Switching Application • Unit: mm Enhancement mode type • High speed : tf = 0.16 µs typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)
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GT50J122
2-16C1CHIBA
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GT50J122
Abstract: No abstract text available
Text: GT50J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J122 Current Resonance Inverter Switching Application • Enhancement mode type • High speed : tf = 0.16 s typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)
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GT50J122
GT50J122
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gt50j102
Abstract: No abstract text available
Text: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd. Generation. Enhancement−Mode. High Speed. : tf = 0.30µs Max. Low Saturation Voltage. : VCE(sat) = 2.7V (Max.)
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GT50J102
gt50j102
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gt50j102
Abstract: No abstract text available
Text: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd. Generation. l Enhancement−Mode. l High Speed. : tf = 0.30µs Max. l Low Saturation Voltage.
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GT50J102
gt50j102
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Untitled
Abstract: No abstract text available
Text: GT50J122 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J122 Current Resonance Inverter Switching Application • Unit: mm Enhancement mode type • High speed : tf = 0.16 µs typ. (IC = 60A) • Low saturation voltage: VCE (sat) = 1.9 V (typ.) (IC = 60A)
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GT50J122
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gt50j102
Abstract: failure report IGBT
Text: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed. : tf = 0.30µs Max. z Low saturation voltage.
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GT50J102
2-21F2C
gt50j102
failure report IGBT
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gt50j102
Abstract: 2-21f2c
Text: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd. Generation. Enhancement−Mode. High Speed. : tf = 0.30µs Max. Low Saturation Voltage. : VCE(sat) = 2.7V (Max.)
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GT50J102
gt50j102
2-21f2c
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Preliminary GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Chanenel IGBT GT50J121 High Power Switching Applications Fast Switching Applications ● ● ● ● The 4th generation Enhancement-mode Fast Switching FS :Operating frequency up to 50kHz(Reference)
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GT50J121
50kHz
Tj125
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Untitled
Abstract: No abstract text available
Text: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed. : tf = 0.30µs Max. Low saturation voltage. : VCE(sat) = 2.7V (Max.)
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GT50J102
2-21F2C
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Untitled
Abstract: No abstract text available
Text: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)
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GT50J121
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GT50J121
Abstract: GT50J325 igbt transistor
Text: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)
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GT50J121
GT50J121
GT50J325
igbt transistor
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GT50J102
Abstract: toshiba code igbt
Text: GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT50J102 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm z Third-generation IGBT z Enhancement mode type z High speed. : tf = 0.30 s Max. z Low saturation voltage.
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GT50J102
GT50J102
toshiba code igbt
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GT50J121
Abstract: GT50J325
Text: GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications • Fourth-generation IGBT • Enhancement mode type • Unit: mm Fast switching FS : Operating frequency up to 50 kHz (reference)
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GT50J121
GT50J121
GT50J325
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GT50J102
Abstract: No abstract text available
Text: GT50J102 TOSHIBA G T 5 0 J 1 02 TO SH IBA INSU LATED GATE BIPO LAR TRANSISTOR SILICON N C H A N N EL IGBT HIGH POW ER SW ITCHING APPLICATIONS. M O T O R C O NTRO L APPLICATIONS. • • • • The 3rd. Generation. Enhancement-Mode. High Speed. : tf = 0.30/« Max.
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GT50J102
961001EAA
GT50J102
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gt50j
Abstract: No abstract text available
Text: TOSHIBA GT50J102 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 5 0 J 1 02 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • The 3rd. Generation. • Enhancement-Mode. • High Speed. 2 0.5 MAX. fi 3.3 ±0.2
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GT50J102
2-21F2C
gt50j
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GT50J101
Abstract: No abstract text available
Text: GT50J101 HIGH POWER SWITCHING APPLICATIONS. Unit in mm . High Input Impedance : tf=0.35ns Max. io -6 . . P •» < = i —r _| sl = . Low Saturation Voltage : VcE(sat)=4 .0V(Max.) ) 2.50 . Enhancement-Mode j L 'i i l 3.0 +2.5 1.0-0 .2 5 I'.AXIMUM RATINGS (Ta=25°C)
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GT50J101
GT50J101
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GT50J101
Abstract: CP100
Text: GT50J101 HIGH POWER S W I T C H I N G A P P L I C A T I O N S . Unit 20.5MAX High Input I m p e d an ce High Speed tf=0. 35/is Max. Low S a t u r a t i o n Vo lt a g e v C E ( s a t ) = 4 .0 V ( M a x .) in m m 0 3.3 ±0.2 Enhancement-Mode 2.5 3.0 MAXI MUM R A T I N G S
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GT50J101
35/is
GT50J101
CP100
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Untitled
Abstract: No abstract text available
Text: GT50J102 TOSHIBA G T 5 0 J 1 02 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • The 3rd. Generation. Enhancement-Mode. High Speed. : tf=0.30/¿s Max.
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GT50J102
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GT50J102
Abstract: No abstract text available
Text: GT50J102 TOSHIBA TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT G T 5 0 J 1 02 Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • .sf. The 3rd. Generation. Enhancement-Mode. High Speed. : tf= 0.30,«s Max.
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GT50J102
GT50J102
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MG150N2YS40
Abstract: MG100J2YS45 mg75j2ys40 MG150J2YS40 MG15N6ES42 MG100G2YS1 mg75n2ys40 mg25n2ys40 MG200J2YS40 MG50J6ES40
Text: Connection Maximum Bating VCES V ICÌAÌ 8 15 25 G T15J101* eoo G T8J101* G T8J102(SM )* G T15J102* GT15J103(SMJ* 50 75 G T60J101* <60A) G T 80J101* GT50J1Û2+ (80A) M G 50 J1B S 1 1 MG75J1SB11 100 150 200 300 400 500 G T50J101* Q T25J101* MG25J1BS11 MG100J1BS11 MG150J1BS11
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T8J101*
T8J102
T15J101*
T15J102*
GT15J103
T25J101*
MG25J1BS11
T50J101*
T60J101*
80J101*
MG150N2YS40
MG100J2YS45
mg75j2ys40
MG150J2YS40
MG15N6ES42
MG100G2YS1
mg75n2ys40
mg25n2ys40
MG200J2YS40
MG50J6ES40
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25-CJ
Abstract: No abstract text available
Text: GT50J102 SILICON N CHANNEL IGBT Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • The 3rd. Generation. Enhancement-Mode. H ighspeed. : tf=0.3 Vs (Max. Low Saturation Voltage. : VcE(sat) = 2.7V (Max.) M A X IM U M RATINGS (Ta = 25°CJ
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GT50J102
2-21F2C
25-CJ
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