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    GT50T Price and Stock

    ROHM Semiconductor RGT50TM65DGC9

    IGBT TRNCH FLD 650V 21A TO220NFM
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    DigiKey RGT50TM65DGC9 Tube 915 1
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    Newark RGT50TM65DGC9 Bulk 1
    • 1 $2.53
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    TME RGT50TM65DGC9 1
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    Avnet Asia RGT50TM65DGC9 32 Weeks 1,000
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    Chip1Stop RGT50TM65DGC9 Tube 1,000
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    CoreStaff Co Ltd RGT50TM65DGC9 1,000
    • 1 $2.433
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    ROHM Semiconductor RGT50TS65DGC13

    IGBT TRNCH FIELD 650V 48A TO247G
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    DigiKey RGT50TS65DGC13 Tube 593 1
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    Mouser Electronics RGT50TS65DGC13 600
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    Newark RGT50TS65DGC13 Bulk 30 1
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    Ameya Holding Limited RGT50TS65DGC13 30 1
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    CoreStaff Co Ltd RGT50TS65DGC13 30
    • 1 $3.697
    • 10 $2.772
    • 100 $2.086
    • 1000 $1.875
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    ROHM Semiconductor RGT50TS65DGC11

    IGBT TRNCH FIELD 650V 48A TO247N
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    DigiKey RGT50TS65DGC11 Tube 431 1
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    RGT50TS65DGC11 Tube 450
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    Mouser Electronics RGT50TS65DGC11 276
    • 1 $3.82
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    Ameya Holding Limited RGT50TS65DGC11 60 1
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    CoreStaff Co Ltd RGT50TS65DGC11 30
    • 1 $0.999
    • 10 $0.972
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    Microchip Technology Inc APTGT50TL601G

    IGBT MODULE 600V 80A 176W SP1
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    DigiKey APTGT50TL601G Bulk 1 1
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    Avnet Americas APTGT50TL601G Tube 27 Weeks 16
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    Mouser Electronics APTGT50TL601G
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    Newark APTGT50TL601G Bulk 16
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    Microchip Technology Inc APTGT50TL601G
    • 1 $69.13
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    NAC APTGT50TL601G Tube 5
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    Vishay Semiconductors VS-GT50TP60N

    IGBT MOD 600V 85A 208W INT-A-PAK
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    GT50T Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    GT50T101 Toshiba Discrete IGBTs Original PDF

    GT50T Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: VS-GT50TP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 50 A FEATURES • Low VCE on trench IGBT technology • Low switching losses • 10 s short circuit capability • VCE(on) with positive temperature coefficient


    Original     		PDF VS-GT50TP120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-GT50TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 50 A FEATURES • Low VCE on trench IGBT technology • 5 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C


    Original     		PDF VS-GT50TP60N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-GT50TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 50 A FEATURES • Low VCE on trench IGBT technology • 5 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C


    Original     		PDF VS-GT50TP60N 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: VS-GT50TP120N www.vishay.com Vishay Semiconductors Molding Type Module IGBT, 2 in 1 Package, 1200 V, 50 A FEATURES • Low VCE on trench IGBT technology • Low switching losses • 10 s short circuit capability • VCE(on) with positive temperature coefficient


    Original     		PDF VS-GT50TP120N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: VS-GT50TP60N www.vishay.com Vishay Semiconductors Half Bridge IGBT Power Module, 600 V, 50 A FEATURES • Low VCE on trench IGBT technology • 5 s short circuit capability • VCE(on) with positive temperature coefficient • Maximum junction temperature 175 °C


    Original     		PDF VS-GT50TP60N 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    GT30J124

    Abstract: GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123
    Text: 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor advantage of high-voltage drive.


    Original     		PDF BCE0010E BCE0010F GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30g123 gt30f122 IGBT GT30J124 GT45f122 Series gt45f123

    GT30F124

    Abstract: GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122
    Text: 2010-3 PRODUCT GUIDE Discrete IGBTs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010F GT30F124 GT30J124 GT30F123 gt30g124 GT45F122 *45F122 GT30F124 Equivalent *30g122 gt30g122 gt30f122

    GT50J101

    Abstract: GT50T101 mosfet 500V 50A GT60M102 S5J53 GT60J101 gt15q101 equivalent GT60M101 S5783F 500V N-Channel IGBT TO-3P
    Text: Discrete IGBTs PRODUCT GUIDE Features and Structure •Low carrier accumulation, excellent frequency and switching characteristics •Large forward-bias and reverse-bias safe operating areas FBSOA and RBSOA , high damage resistance •MOSFET-like high input impedance characteristics enable voltage drive


    Original     		PDF

    s5j53

    Abstract: S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A
    Text: 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 http://www.semicon.toshiba.co.jp/eng 1. Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive ● With the conductivity modulation characteristics of a bipolar transistor, ideal for applications that require


    Original     		PDF E0010A BCE0010A 3503C-0109 s5j53 S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 MG30T1AL1 igbt induction cooker MG60M1AL1 mosfet 500V 50A

    GT45F122

    Abstract: gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124
    Text: 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs combine the MOSFET advantage of high input impedance with the bipolar transistor


    Original     		PDF BCE0010D S-167 BCE0010E GT45F122 gt30g122 gt30f122 gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 *45F122 GT45F124

    GT30F121

    Abstract: GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101
    Text: 2005-3 PRODUCT GUIDE Discrete IGBTs semiconductor http://www.semicon.toshiba.co.jp/eng Features and Structure IGBT: Insulated Gate Bipolar Transistor ● MOSFET-like high input impedance characteristics enable voltage drive. ● The conductivity modulation characteristics of a bipolar transistor make it ideal for applications


    Original     		PDF BCE0010A GT30F121 GT30G121 GT30G131 MG30T1AL1 GT30*122 GT45F12 MG60M1AL1 gt30f GT60M301 GT60M101

    GT30J124

    Abstract: GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125
    Text: 製品カタログ 2010-3 東芝半導体 製品カタログ ディスクリート IGBT h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / 1 特長と構造 IGBTは Insulated Gate Bipolar Transistor の頭文字です。 MOSFETと同様に高入力インピーダンス特性を持ち電圧で駆動できます。


    Original     		PDF BCJ0010G BCJ0010F GT30J124 GT45F122 GT30F123 GT30F124 gt30f122 IGBT GT30F124 gt30g122 gt30g124 GT45G122 GT30F125