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    GTM 2012 Search Results

    GTM 2012 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    MD28F020-12/B Rochester Electronics LLC Replacement for Intel part number MD28F020-12. Buy from authorized manufacturer Rochester Electronics. Visit Rochester Electronics LLC Buy
    MD28F020-12/R Rochester Electronics LLC 28F020 - 256K X 8 Flash, Mil Temp Visit Rochester Electronics LLC Buy
    ME3220-123KLB Coilcraft Inc General Purpose Inductor, 12uH, 10%, 1 Element, Ferrite-Core, SMD, 1211, ROHS COMPLIANT Visit Coilcraft Inc
    SER2012-681MLD Coilcraft Inc General Purpose Inductor, 0.68uH, 20%, 1 Element, Ferrite-Core, SMD, 7674, ROHS COMPLIANT Visit Coilcraft Inc

    GTM 2012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ta 7061

    Abstract: No abstract text available
    Text: CORPORATION G79L08 ISSUED DATE :2004/04/13 REVISED DATE :2004/12/02B 3-TERMINAL NEGATIVE VOLTAGE REGULATOR Description The GTM G79L08 is monolithic fixed voltage regulator integrated circuit .They are suitable for applications that required supply current up to 100mA.


    Original     		PDF G79L08 2004/12/02B G79L08 100mA. 100mA ta 7061

    Untitled

    Abstract: No abstract text available
    Text: CORPORATION G79L06 ISSUED DATE :2004/04/13 REVISED DATE :2004/12/02B 3-TERMINAL NEGATIVE VOLTAGE REGULATOR Description The GTM G79L06 is monolithic fixed voltage regulator integrated circuit .They are suitable for applications that required supply current up to 100mA.


    Original     		PDF G79L06 2004/12/02B G79L06 100mA. 100mA

    Untitled

    Abstract: No abstract text available
    Text: CORPORATION G79L09 ISSUED DATE :2004/04/13 REVISED DATE :2004/12/02B 3-TERMINAL NEGATIVE VOLTAGE REGULATOR Description The GTM G79L09 is monolithic fixed voltage regulator integrated circuit .They are suitable for applications that required supply current up to 100mA.


    Original     		PDF G79L09 2004/12/02B G79L09 100mA. 100mA

    Untitled

    Abstract: No abstract text available
    Text: ISSUED DATE :2004/04/27 REVISED DATE : GM79L18 3 - T E R M I N A L N E G AT I V E V O L T A G E R E G U L AT O R Description The GTM GM79L18 is monolithic fixed voltage regulator integrated circuit .They are suitable for applications that required supply current up to 100 mA.


    Original     		PDF GM79L18 GM79L18 100mA

    Untitled

    Abstract: No abstract text available
    Text: CORPORATION GM79L06 ISSUED DATE :2004/04/12 REVISED DATE : 3 - T E R M I N A L N E G AT I V E V O L T A G E R E G U L AT O R Description The GTM GM79L06 is monolithic fixed voltage regulator integrated circuit .They are suitable for applications that required supply current up to 100 mA.


    Original     		PDF GM79L06 GM79L06 100mA OT-89

    Untitled

    Abstract: No abstract text available
    Text: ISSUED DATE :2004/04/27 REVISED DATE : GM79L15 3 - T E R M I N A L N E G AT I V E V O L T A G E R E G U L AT O R Description The GTM GM79L15 is monolithic fixed voltage regulator integrated circuit .They are suitable for applications that required supply current up to 100 mA.


    Original     		PDF GM79L15 GM79L15 100mA

    Untitled

    Abstract: No abstract text available
    Text: CORPORATION GM79L08 ISSUED DATE :2004/04/12 REVISED DATE : 3 - T E R M I N A L N E G AT I V E V O L T A G E R E G U L AT O R Description The GTM G79L08 is monolithic fixed voltage regulator integrated circuit .They are suitable for applications that required supply current up to 100 mA.


    Original     		PDF GM79L08 G79L08 100mA OT-89

    GB340

    Abstract: No abstract text available
    Text: 1/3 GB340 Description The GB340 is designed for Low Voltage, High Frequency Inverter, Free Wheeling, and Polarity Protection Application. Package Dimensions EF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF.


    Original     		PDF GB340 GB340 12ant

    GLA27

    Abstract: No abstract text available
    Text: 1/2 G L A2 7 NPN TRANSISTOR Description The GLA27 is designed for darlington amplifier high current gain collector current to 500mA. Package Dimensions REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0.60 0.80 0.25 0.35 REF. B J 1 2


    Original     		PDF GLA27 500mA.

    G421SD

    Abstract: No abstract text available
    Text: 1/2 G421SD S U R F A C E M O U N T, S C H O T T K Y B A R R I E R D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 1 A Description The G421SD is designed for low power rectification. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80


    Original     		PDF G421SD G421SD

    GL3019

    Abstract: No abstract text available
    Text: 1/1 GL3019 NP N E PITAX I AL PL ANAR T RANSI STOR Description The GL3019 is designed for general purpose amplifier applications and switching requiring collector currents 1A. Package Dimensions REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02


    Original     		PDF GL3019 GL3019

    100MHZ

    Abstract: GMA42
    Text: 1/2 G M A4 2 NPN EPITAXIAL PLANAR T RANSISTOR Description The GMA42 is designed for application as a video output to drive color CRT ,or as a dialer circuit in electronics telephone. EF. A B C D E F Millimeter Min. Max. 4.4 4.6 4.05 4.25 1.50 1.70 1.30 1.50


    Original     		PDF GMA42 100MHZ

    GBC807

    Abstract: No abstract text available
    Text: 1/2 GBC807 P NP E PITAX I AL P L ANAR T RANS ISTO R Description The GBC807 is designed for switching and AF amplifier application, suitable for driver storages and low power output storages. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10


    Original     		PDF GBC807 GBC807

    GMA14

    Abstract: No abstract text available
    Text: ISSUED DATE :2001/10/04 REVISED DATE :2006/05/10C G M A1 4 NP N E PITAX I AL PLANAR T RANSI STOR Description The GMA14 is a Darlington amplifier transistor designed for applications requiring extremely high current gain. Package Dimensions SOT-89 Millimeter


    Original     		PDF 2006/05/10C GMA14 OT-89 GMA14

    bt 2411

    Abstract: GMBT1036 GMBT2411
    Text: CORPORATION G M BT 2 4 11 Description ISSUED DATE :2006/09/14 REVISED DATE : NPN SILICON PLANAR MEDIUM POWER TRANSISTOR The GMBT2411 is designed for medium power amplifier applications. Features ICMax.=500mA Low VCE sat . Optimal for low voltage operation.


    Original     		PDF GMBT2411 500mA GMBT1036 GMBT2411 bt 2411 GMBT1036

    GL2907A

    Abstract: GL29
    Text: 1/2 GL2907A P NP E PITAX IAL PL ANAR T RANS ISTO R Description The GL2907A is designed for general purpose amplifier and high-speed switching, medium power switching applications. Package Dimensions Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 10 0.60


    Original     		PDF GL2907A GL2907A GL29

    GMBT8050

    Abstract: BT8050
    Text: ISSUED DATE :2002/11/21 REVISED DATE :2005/04/08B GM BT8050 NP N E PITAXI AL T RANSI STOR Description The GMBT8050 is designed for general purpose amplifier applications. Package Dimensions REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.40 2.80 1.40 1.60


    Original     		PDF 2005/04/08B BT8050 GMBT8050 BT8050

    GLBCP69

    Abstract: No abstract text available
    Text: CORPORATION GLBCP69 ISSUED DATE :2005/07/15 REVISED DATE : P NP S ILI CO N EP ITAX I AL T RANS ISTO R Description The GLBCP69 is designed for use in low voltage and medium power applications. Features VCEO : -20V IC :1A Package Dimensions SOT-223 REF. A C


    Original     		PDF GLBCP69 GLBCP69 OT-223

    GM1426

    Abstract: No abstract text available
    Text: CORPORATION GM1426 ISSUED DATE :2006/03/14 REVISED DATE : PNP EPITAXIAL PLANAR T RANSISTOR Description The GM1426 is designed for DC-DC converter. Features hFE=160~390 @VCE=-2V, IC=-100mA Low Saturation Voltage VCE(sat)=-0.5 (Max.) (@IC=-2A, IB=-100mA) Package Dimensions


    Original     		PDF GM1426 GM1426 -100mA) OT-89

    GDMA77

    Abstract: No abstract text available
    Text: ISSUED DATE :2005/04/01 REVISED DATE : G D M A7 7 S U R F A C E M O U N T, B A N D S W I T C H I N G D I O D E V O LT A G E 3 5 V, C U R R E N T 0 . 1 A Description The GDMA77 is designed for band switching application. Features Low forward dynamic resistance rf


    Original     		PDF GDMA77

    GBAV151

    Abstract: No abstract text available
    Text: ISSUED DATE :2005/07/14 REVISED DATE : G B AV 1 5 1 S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 4 0 V, C U R R E N T 0 . 1 A Description The GBAV151 is designed for ultra high speed switching application. Package Dimensions Millimeter


    Original     		PDF GBAV151

    GMBT1036

    Abstract: GMBT2411
    Text: CORPORATION G M BT 1 0 3 6 Description ISSUED DATE :2006/09/14 REVISED DATE : PNP SILICON PLANAR MEDIUM POWER TRANSISTOR The GMBT1036 is designed for medium power amplifier applications. Features ICMax.=-500mA Low VCE sat . Optimal for low voltage operation.


    Original     		PDF GMBT1036 -500mA GMBT2411 GMBT1036 GMBT2411

    GSC1473A

    Abstract: No abstract text available
    Text: ISSUED DATE :2005/04/15 REVISED DATE :2006/03/21B GSC1473A NPN SILICON TRANSISTOR Description The GSC1473A is designed for general amplification. Features High Collector to Emitter Voltage VCEO High Transition Frequency fT Package Dimensions D TO-92 E A S1


    Original     		PDF 2006/03/21B GSC1473A GSC1473A

    GN202K

    Abstract: No abstract text available
    Text: CORPORATION GN202K ISSUED DATE :2006/04/10 REVISED DATE : S U R F A C E M O U N T, S W I T C H I N G D I O D E V O LT A G E 8 0 V, C U R R E N T 0 . 1 A Description The GN202K is designed for ultra high speed switching. Package Dimensions REF. A B C D E F


    Original     		PDF GN202K GN202K