GTO thyristor 4500V 4000A
Abstract: FAST SWITCHING THYRISTOR ST GTO thyristor driver 10A fast Gate Turn-off Thyristor GTO thyristor GTO gate drive unit mitsubishi fast thyristor 200A gate control circuits GTO 4.5kv MITSUBISHI GATE TURN-OFF THYRISTOR gto gto Gate Drive circuit
Text: IEEE Industry Applications Society Annual Meeting St. Louis, Missouri, October 12-16, 1998 A NEW GATE COMMUTATED TURN-OFF THYRISTOR AND COMPANION DIODE FOR HIGH POWER APPLICATIONS John F. Donlon*, Eric R. Motto*, M. Yamamoto*, Takahiko Iida* *Powerex, Incorporated, Youngwood, PA 15697 USA
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500V/1500A
FD1500BV-90DA
500V/500A
FD500JV-90DA
GTO thyristor 4500V 4000A
FAST SWITCHING THYRISTOR ST
GTO thyristor driver
10A fast Gate Turn-off Thyristor
GTO thyristor
GTO gate drive unit mitsubishi
fast thyristor 200A gate control circuits
GTO 4.5kv
MITSUBISHI GATE TURN-OFF THYRISTOR gto
gto Gate Drive circuit
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DGT304SE13
Abstract: GTO 100A 750V DGT304SE DS460 GTO 750V 100A AN4506
Text: DGT304SE13 DGT304SE Gate Turn-off Thyristor Replaces January 2000 version, DS4609-4.0 DS4609-4.1 February 2002 APPLICATIONS KEY PARAMETERS 700A ITCM VDRM 1300V IT AV 250A dVD/dt 500V/µs diT/dt 500A/µs • Variable speed A.C. motor drive inverters (VSD-AC)
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DGT304SE13
DGT304SE
DS4609-4
DGT304SE13
GTO 100A 750V
DGT304SE
DS460
GTO 750V 100A
AN4506
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Untitled
Abstract: No abstract text available
Text: DGT305RE DGT305RE Reverse Blocking Gate Turn-off Thyristor DS5519-2.0 February 2002 FEATURES KEY PARAMETERS ITCM 700A VDRM 1800V High Reliability In Service IT AV 240A • High Voltage Capability dVD/dt 500V/µs ■ Fault Protection Without Fuses diT/dt 500A/µs
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DGT305RE
DS5519-2
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UFN450
Abstract: UFN451 UFN453 GTO 100A 500V
Text: UNITRODE CORP TS 9347963 UN I T R O D E DE^I T 3 4 7 citi3 □ □ l ü b cm 7 CORP 92D |~ D 10690 POWER MOSFET TRANSISTORS UFN450 UFN451 UFN452 UFN453 500 Volt, 0.4 Ohm N-Channel T ' 3^/3 FEATURES • Fast Switching • Low Drive Current • Ease of Paralleling
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UFN450
UFN451
UFN452
UFN453
UFN451
UFN450
UFN453
GTO 100A 500V
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Untitled
Abstract: No abstract text available
Text: UniFETTM FDL100N50F N-Channel MOSFET,FRFET 500V, 100A, 0.055Ω Features Description • RDS on = 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDL100N50F
238nC)
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FDL100N50F
Abstract: FDL100N50 fdl100n
Text: UniFETTM FDL100N50F N-Channel MOSFET,FRFET 500V, 100A, 0.055Ω Features Description • RDS on = 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.
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FDL100N50F
238nC)
FDL100N50F
FDL100N50
fdl100n
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FDH15N50
Abstract: GTO 100A 500V
Text: FDH15N50 / FDP15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt
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FDH15N50
FDP15N50
O-247
O-220
GTO 100A 500V
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marking 27A DIODE
Abstract: FDH27N50 GTO 100A 500V
Text: FDH27N50 27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Qg results in Simple Drive Requirement • PFC Boost • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness
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FDH27N50
O-247
marking 27A DIODE
FDH27N50
GTO 100A 500V
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IRFP450A
Abstract: diode 400V 4A Power MOSFET 50V 10A diode MARKING A1 125 diode N-channel 500V mosfet
Text: IRFP450A 14A, 500V, 0.40 Ohm, N-Channel SMPS Power MOSFET Applications Features • Switch Mode Power Supplies SMPS • Low Gate Charge Requirement • Uninterruptable Power Supply • Improved Gate, Ruggedness • High Speed Power Switching Qg results Avalanche
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IRFP450A
O-247
IRFP450A
diode 400V 4A
Power MOSFET 50V 10A
diode MARKING A1
125 diode
N-channel 500V mosfet
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FDH27N50
Abstract: No abstract text available
Text: FDH27N50 27A, 500V, 0.19 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness
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FDH27N50
O-247
FDH27N50
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FDH44N50
Abstract: No abstract text available
Text: FDH44N50 44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness
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FDH44N50
O-247
FDH44N50
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diode 8a 400v
Abstract: IRF840A 125 diode diode MARKING A1 Marking 8A n-channel 250V power mosfet n-Channel mosfet 400v Package Marking 8A SWITCH-MODE
Text: IRF840A 8A, 500V, 0.850 Ohm, N-Channel SMPS Power MOSFET Applications Features • Switch Mode Power Supplies SMPS • Low Gate Charge Requirement • Uninterruptable Power Supply • Improved Gate, Ruggedness • High Speed Power Switching Qg results Avalanche
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IRF840A
O-220AB
diode 8a 400v
IRF840A
125 diode
diode MARKING A1
Marking 8A
n-channel 250V power mosfet
n-Channel mosfet 400v
Package Marking 8A
SWITCH-MODE
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FDH44N50
Abstract: No abstract text available
Text: FDH44N50 44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness
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FDH44N50
O-247
FDH44N50
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irfp460a
Abstract: irfp460a equivalent MOSFET IRFP460A
Text: IRFP460A 20A, 500V, 0.22 Ohm, N-Channel SMPS Power MOSFET Applications Features • Switch Mode Power Supplies SMPS • Low Gate Charge Requirement • Uninterruptable Power Supply • Improved Gate, Ruggedness • High Speed Power Switching Qg results Avalanche
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IRFP460A
O-247
100oC,
irfp460a
irfp460a equivalent
MOSFET IRFP460A
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Untitled
Abstract: No abstract text available
Text: FDH44N50 44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt Ruggedness
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FDH44N50
O-247
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Untitled
Abstract: No abstract text available
Text: FDH44N50 44A, 500V, 0.12 Ohm, N-Channel SMPS Power MOSFET Applications Features • Low Gate Charge Requirement Qg results in Simple Drive • Uninterruptable Power Supply • Improved Avalanche and Dynamic dv/dt Ruggedness • High Speed Power Switching • Improved rDS ON
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FDH44N50
O-247
FDH44N50
100oC,
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Application of irf840
Abstract: TRANSISTOR mosfet IRF840 datasheet irf840 mosfet diode 400V 4A irf840 equivalent power supply IRF840 APPLICATION IRF840 MOSFET irf840 power supply transistor irf840 IRF840 and its equivalent
Text: IRF840 Data Sheet January 2002 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features • 8A, 500V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF840
TA17425.
Application of irf840
TRANSISTOR mosfet IRF840
datasheet irf840 mosfet
diode 400V 4A
irf840 equivalent
power supply IRF840 APPLICATION
IRF840 MOSFET
irf840 power supply
transistor irf840
IRF840 and its equivalent
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Untitled
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRFW/I820A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V
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IRFW/I820A
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IRF820A
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRF820A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V
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IRF820A
O-220
IRF820A
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FDB15N50
Abstract: fdb fairchild FDH15N50 FDP15N50
Text: FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt
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FDH15N50
FDP15N50
FDB15N50
O-263AB
FDB15N50
fdb fairchild
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IRF820S
Abstract: diode Rl 257
Text: $GYDQFHG 3RZHU 026 7 IRF820S FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.5 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V
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IRF820S
IRF820S
diode Rl 257
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TRANSISTOR mosfet IRF840
Abstract: IRF840 application note Switching Application of irf840
Text: IRF840 Data Sheet Title F84 bt A, 0V, 50 m, 8A, 500V, 0.850 Ohm, N-Channel Power MOSFET Features This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of
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IRF840
TRANSISTOR mosfet IRF840
IRF840 application note
Switching Application of irf840
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Untitled
Abstract: No abstract text available
Text: $GYDQFHG 3RZHU 026 7 IRFR/U420A FEATURES BVDSS = 500 V ♦ Avalanche Rugged Technology ♦ Rugged Gate Oxide Technology RDS(on) = 3.0Ω ♦ Lower Input Capacitance ♦ Improved Gate Charge ID = 2.3 A ♦ Extended Safe Operating Area ♦ Lower Leakage Current: 10µA (Max.) @ VDS = 500V
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IRFR/U420A
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FDB15N50
Abstract: FDH15N50 FDP15N50
Text: FDH15N50 / FDP15N50 / FDB15N50 15A, 500V, 0.38 Ohm, N-Channel SMPS Power MOSFET Applications Features Switch Mode Power Supplies SMPS , such as • Low Gate Charge Requirement • PFC Boost Qg results in Simple Drive • Improved Gate, Avalanche and High Reapplied dv/dt
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FDH15N50
FDP15N50
FDB15N50
O-263AB
FDB15N50
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