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    GTO 5A 500V Search Results

    GTO 5A 500V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    DA14585-00VVDB-P Renesas Electronics Corporation SmartBond™ DA14585 Bluetooth Low Energy Pro Development Kit Daughterboard for the WLCSP-34 Package Visit Renesas Electronics Corporation
    H5N5006LSTL-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 3.5A 3000Mohm LDPAK(S)-(1)/To-263 Visit Renesas Electronics Corporation
    H5N5001FM-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 5A 1.5Mohm To-220Fm Visit Renesas Electronics Corporation
    H5N5006DL-E Renesas Electronics Corporation Nch Single Power Mosfet 500V 3A 3000Mohm DPAK(L)-(2)/To-251 Visit Renesas Electronics Corporation

    GTO 5A 500V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N6975

    Abstract: 2n6978 2N6976 2N6977 AN7254 AN7260
    Text: 2N6975, 2N6976, 2N6977, 2N6978 5A, 400V and 500V N-Channel IGBTs April 1995 Features Package JEDEC TO-204AA BOTTOM VIEW • 5A, 400V and 500V • VCE ON 2V COLLECTOR (FLANGE) EMITTER • TFI 1µs, 0.5µs • Low On-State Voltage GATE • Fast Switching Speeds


    Original     		PDF 2N6975, 2N6976, 2N6977, 2N6978 O-204AA 2N6977 2N6978 2N6975 2N6976 AN7254 AN7260

    Untitled

    Abstract: No abstract text available
    Text: FRS440D, FRS440R, FRS440H 5A, 500V, 1.420 Ohm, Rad Hard, N-Channel Power MOSFETs December 2001 Features Package • 5A, 500V, RDS on = 1.420Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRS440D, FRS440R, FRS440H O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD MIL-S-19500

    FQB5N50CF

    Abstract: FQB5N50CFTF FQB5N50CFTM
    Text: FRFET TM FQB5N50CF 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)


    Original     		PDF FQB5N50CF FQB5N50CF FQB5N50CFTF FQB5N50CFTM

    2E12

    Abstract: 3E12 FRS440D FRS440H FRS440R Rad Hard in Fairchild for MOSFET
    Text: FRS440D, FRS440R, FRS440H 5A, 500V, 1.420 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 5A, 500V, RDS on = 1.420Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		PDF FRS440D, FRS440R, FRS440H O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD MIL-S-19500 2E12 3E12 FRS440D FRS440H FRS440R Rad Hard in Fairchild for MOSFET

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDP5N50 / FDPF5N50T tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A • Low gate charge ( Typ. 11nC) These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDP5N50 FDPF5N50T

    Untitled

    Abstract: No abstract text available
    Text: TM FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)


    Original     		PDF FQPF5N50CF FQPF5N50CF

    FQPF5N50CF

    Abstract: No abstract text available
    Text: TM FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)


    Original     		PDF FQPF5N50CF FQPF5N50CF

    Untitled

    Abstract: No abstract text available
    Text: TM FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB5N50C/FQI5N50C

    Untitled

    Abstract: No abstract text available
    Text: UniFETTM FDP5N50 / FDPF5N50T tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDP5N50 FDPF5N50T FDPF5N50 FDPF5N50T

    FDPF5N50T

    Abstract: MOSFET 500V 5A
    Text: UniFETTM FDP5N50 / FDPF5N50T tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDP5N50 FDPF5N50T FDPF5N50T MOSFET 500V 5A

    mosfet 500V 5A

    Abstract: FDPF5N50 FDP5N50
    Text: UniFETTM FDP5N50 / FDPF5N50 tm N-Channel MOSFET 500V, 5A, 1.4Ω Features Description • RDS on = 1.15Ω ( Typ.)@ VGS = 10V, ID = 2.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDP5N50 FDPF5N50 FDPF5N50 mosfet 500V 5A

    FDPF7N50U

    Abstract: FDP7N50U
    Text: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description • 5A, 500V, RDS on = 1.5 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		PDF FDP7N50U/FDPF7N50U FDPF7N50U FDP7N50U

    Untitled

    Abstract: No abstract text available
    Text: TM FQPF5N50CF 500V N-Channel MOSFET Features Description 5A, 500V, RDS on = 1.55 Ω @VGS = 10 V • These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 18nC)


    Original     		PDF FQPF5N50CF FQPF5N50CF

    Untitled

    Abstract: No abstract text available
    Text: TM UniFET FDP7N50U/FDPF7N50U 500V N-Channel MOSFET Features Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • 5A, 500V, RDS on = 1.5 @VGS = 10 V


    Original     		PDF FDP7N50U/FDPF7N50U

    FQPF*5n50c

    Abstract: FQP5N50C FQPF Series FQPF5N50C application notes FQPF5N50C fqpf5N50C equivalent
    Text: TM FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP5N50C/FQPF5N50C FQPF*5n50c FQP5N50C FQPF Series FQPF5N50C application notes FQPF5N50C fqpf5N50C equivalent

    FQD5N50C

    Abstract: FQU5N50C
    Text: TM FQD5N50C / FQU5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD5N50C FQU5N50C FQU5N50C

    FDD5N50UTM

    Abstract: FDD5N50U FDD5N50UTF
    Text: TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDD5N50U FDD5N50U FDD5N50UTM FDD5N50UTF

    Untitled

    Abstract: No abstract text available
    Text: QFET FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB5N50C/FQI5N50C FQB5N50C/FQI5N50C

    fqpf5n50c

    Abstract: FQPF*5n50c fqpf5N50C equivalent FQP5N50C
    Text: TM FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP5N50C/FQPF5N50C fqpf5n50c FQPF*5n50c fqpf5N50C equivalent FQP5N50C

    Untitled

    Abstract: No abstract text available
    Text: TM FQP5N50C/FQPF5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQP5N50C/FQPF5N50C

    Untitled

    Abstract: No abstract text available
    Text: QFET FQB5N50C/FQI5N50C 500V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQB5N50C/FQI5N50C FQB5N50C/FQI5N50C

    FDD5N50FTM

    Abstract: FDD5N50F FDD5N50FTF
    Text: UniFETTM FDD5N50F tm N-Channel MOSFET, FRFET 500V, 3.5A, 1.55Ω Features Description • RDS on = 1.25Ω ( Typ.)@ VGS = 10V, ID = 1.75A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar


    Original     		PDF FDD5N50F FDD5N50FTM FDD5N50F FDD5N50FTF

    Untitled

    Abstract: No abstract text available
    Text: TM Ultra FRFET FDD5N50U tm N-Channel MOSFET, FRFET 500V, 3A, 2.0Ω Features Description • RDS on = 1.65Ω ( Typ.)@ VGS = 10V, ID = 1.5A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe,


    Original     		PDF FDD5N50U FDD5N50U

    TL494 full bridge inverter

    Abstract: dc motor speed control tl494 switching power supply TL494 WELDING TL494 full bridge IR2N6547 Speed control of dc motor using TL494 Ruttonsha make Power diode ratings ir in4007 full bridge TL494 946b
    Text: APPLICATION NOTE 946B High Voltage, High Frequency Switching Using a Cascode Connection of HEXFET and Bipolar Transistor H E X FE T is the tra dem ark fo r In te rn a tio n a l R e c tifie r P ow er M O S FETs By S. CLEM EN TE, a . PELLY, R. R U T T O N S H A , B. TAYLOR


    OCR Scan     		PDF 25kHz AN-946B TL494 full bridge inverter dc motor speed control tl494 switching power supply TL494 WELDING TL494 full bridge IR2N6547 Speed control of dc motor using TL494 Ruttonsha make Power diode ratings ir in4007 full bridge TL494 946b