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    GUNN DIODE MICROWAVE TRANSMITTER Search Results

    GUNN DIODE MICROWAVE TRANSMITTER Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    GUNN DIODE MICROWAVE TRANSMITTER Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Gunn Diode microwave transmitter

    Abstract: microwave transmitter Gunn Diode at power supply circuit MA87922 AFC diode GaAs Gunn diode VCO gunn oscillator wr62 Gunn Diode symbol step recovery diode
    Text: Microwave Transmitter VCO 14.40 - 15.53 GHz MA87922 V3.00 Features ● ● ● ● ● Excellent Tuning Linearity Small and Lightweight Modulation and External AFC Control can be Commonly Applied to the Tuning Bias ±0.07% Frequency vs. Temperature Stability


    Original     		PDF MA87922 UG-419/U WR-62 Gunn Diode microwave transmitter microwave transmitter Gunn Diode at power supply circuit MA87922 AFC diode GaAs Gunn diode VCO gunn oscillator wr62 Gunn Diode symbol step recovery diode

    Gunn Diode microwave transmitter

    Abstract: 4-40 UNC-2B microwave transmitter Gunn Diode at power supply circuit 2057 OUTPUT POWER OF A GUNN DIODE OSCILLATOR digital frequency multiplier microwave signal diode step recovery diode
    Text: Microwave Transmitter VCO 21.20 - 23.60 GHz MA87876 V3.00 Features ● ● ● ● ● MA87876 - 1, 2 Excellent Tuning Linearity Small and Light Weight Modulation and External AFC Control can be Commonly Applied to the Tuning Bias ±0 .05% Frequency vs. Temperature Stability


    Original     		PDF MA87876 MA87876 UG-595/U WR-42 Gunn Diode microwave transmitter 4-40 UNC-2B microwave transmitter Gunn Diode at power supply circuit 2057 OUTPUT POWER OF A GUNN DIODE OSCILLATOR digital frequency multiplier microwave signal diode step recovery diode

    Gunn Diode

    Abstract: MO9062-22 wr 90 x band flange waveguide gunn
    Text: GUNN TRANSCEIVERS Fixed Frequency TM MO86728 – MO9096 Features ● Low Cost ● Direction-of-Motion Sensing ● High-Volume Design ● Various Output Power Levels ● Dual-Channel Output ● Pulsed DC Input Voltage ● Low-Power Consumption Applications


    Original     		PDF MO86728 MO9096 MO9300 MO9402 UG/595/U WR-42 4-40-2B WR-28 Gunn Diode MO9062-22 wr 90 x band flange waveguide gunn

    wr 90 x band flange waveguide

    Abstract: WR90 waveguide Gunn Diode MO86728 gunn Gunn Diode microwave transmitter x band gunn diode MO-90 MO9062 UG-39
    Text: GUNN TRANSCEIVERS Fixed Frequency TM MO86728 – MO9096 Features ● Low Cost ● Direction-of-Motion Sensing ● High-Volume Design ● Various Output Power Levels ● Dual-Channel Output ● Pulsed DC Input Voltage ● Low-Power Consumption Applications


    Original     		PDF MO86728 MO9096 MO9300 MO9402 UG/595/U WR-42 4-40-2B WR-28 wr 90 x band flange waveguide WR90 waveguide Gunn Diode MO86728 gunn Gunn Diode microwave transmitter x band gunn diode MO-90 MO9062 UG-39

    MA87811

    Abstract: Gunn Diode Gunn Diode microwave transmitter Gunn Diode symbol Gunn oscillator GaAs gunn
    Text: Varactor Controlled Oscillator 21.20 - 23.60 GHz MA87811 V3.00 Features ● ● ● ● ● ● 1.375 34.93 Low Cost Excellent Tuning Linearity ±0.03% Frequency vs. Temperature Stability Small and Lightweight Modulation and External AFC Control Can be Commonly Applied to Electronic Tuning Bias


    Original     		PDF MA87811 UG/595-U. WR-42 WR-42, UG-595/U MA87811 Gunn Diode Gunn Diode microwave transmitter Gunn Diode symbol Gunn oscillator GaAs gunn

    gunn diode oscillator

    Abstract: 10 GHz gunn diode Gunn Diode symbol Gunn Diode microwave transmitter Gunn oscillator GaAs Gunn Diode
    Text: Varactor Controlled Oscillator 21.20 - 23.60 GHz MA87881 V3.00 Features ● ● ● ● ● ● 0.535 13.59 Excellent Tuning Linearity Small and Lightweight Modulation and External AFC Control can be Commonly Applied to the Electronic Tuning Bias ±0.05% Frequency vs. Temperature Stability


    Original     		PDF MA87881 UG/595-U WR-42 WR-42, UG-595/U gunn diode oscillator 10 GHz gunn diode Gunn Diode symbol Gunn Diode microwave transmitter Gunn oscillator GaAs Gunn Diode

    Gunn Diode symbol

    Abstract: Gunn Diode microwave transmitter Gunn oscillator GaAs Gunn Diode
    Text: Varactor Controlled Oscillator 21.20 - 23.60 GHz MA87827 V3.00 Features ● ● ● ● ● 0.900 22.86 Excellent Tuning Linearity Small and Lightweight Modulation and External AFC Control Can be Commonly Applied to Electronic Tuning Bias ±0.05% Frequency vs. Temperature Stability


    Original     		PDF MA87827 WR-42, UG-595/U Gunn Diode symbol Gunn Diode microwave transmitter Gunn oscillator GaAs Gunn Diode

    Gunn Diode symbol

    Abstract: Gunn Diode microwave transmitter gunn Gunn oscillator GaAs
    Text: Varactor Controlled Oscillator 17.70 - 19.70 GHz MA87826 V3.00 Features ● ● ● ● ● ● 2.10 MAX. 53.34 Excellent Tuning Linearity Small and Lightweight Modulation and External AFC Control can be Commonly Applied to Electronic Tuning Bias Power Outputs to 23 dBm Available


    Original     		PDF MA87826 UG-595/U WR-42 WR-42, UG-595/U Gunn Diode symbol Gunn Diode microwave transmitter gunn Gunn oscillator GaAs

    GUNN DIODE

    Abstract: radar gunn diode gunn diode radar Gunn Diode symbol Gunn Diode microwave transmitter gunn diode datasheet MWT-GK gunn diode oscillator GaAs Gunn Diode OUTPUT POWER OF A GUNN DIODE OSCILLATOR
    Text: MwT-GK K-band 18-26.5GHz Gunn Diode Preliminary Features: K-band (18-26.5 GHz) frequency source applications Excellent frequency chirp performance Pulsed or CW operation 20 years of proven performance & reliability Processed in MwT captive GaAs fab Available in packaged or die form


    Original     		PDF

    NE800296

    Abstract: diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 24-Hour NE800296 diode deg avalanche zo 150 63 NE72089 ne8002 SK3448 universal jfet biasing curve graph gunn diode ghz s-parameter NE800196 impatt diode NE800495-4

    NE800296

    Abstract: NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application
    Text: California Eastern Laboratories AN82901-1 APPLICATION NOTE Application of Microwave GaAs FETs 9/82 INTRODUCTION The history of converting microwave communications, as well as other communications technologies, to solid state electronics is a long one. Early advances were first made in


    Original     		PDF AN82901-1 NE800296 NE800196 NE24406 diode deg avalanche zo 150 63 SK3448 ne8002 NE868199 shockley diode NE800495-4 shockley diode application

    128-QAM

    Abstract: 128QAM gunn diode datasheet PDH/SDH 15 GHz power amplifier Output Power 37dBm parameters needed to specify noise performance of microwave amplifier mpt1420 Gunn Diode millimeter gunn diode gunn diode 2- 3Ghz
    Text: Linearity Requirements for MMICs for 16 through 128QAM ETSI Compliant Radios Dr. Jim Harvey, Mimix Broadband This paper highlights some of the regulatory and operational issues which influence linearity requirements and frequency planning aspects of high frequency microwave radios used for point to point or point to multipoint systems. While in the US,


    Original     		PDF 128QAM 128-QAM 128QAM gunn diode datasheet PDH/SDH 15 GHz power amplifier Output Power 37dBm parameters needed to specify noise performance of microwave amplifier mpt1420 Gunn Diode millimeter gunn diode gunn diode 2- 3Ghz

    Gunn Diode at power supply circuit

    Abstract: Gunn Diode microwave transmitter Gunn diode UG-595 GaAs Gunn Diode 24 10 GHz mixer diode ma87924 step recovery diode
    Text: an A M P com pany Microwave Transmitter VCO 17.70-19.70 GHz MA87924 V3.00 Features • Excellent Tuning Linearity • Small and Lightweight • Modulation and External AFC Control can be Commonly Applied to the Tuning Bias • ±0.055% Frequency vs. Temperature Stability


    OCR Scan     		PDF MA87924 Gunn Diode at power supply circuit Gunn Diode microwave transmitter Gunn diode UG-595 GaAs Gunn Diode 24 10 GHz mixer diode ma87924 step recovery diode

    Gunn Diode

    Abstract: Microwave Silicon Detector Diode DW9248 microwave waveguide Marconi gunn Silicon Detector UHF diode varactor diode filter varactor
    Text: Product List TYPE No. DESCRIPTION DA1304 DA1307 MILLIMETRE WAVE BALANCED MIXER 34.0 to 34.4GHz BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER C & X BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER X & J BAND DOUBLE BALANCED MIXER


    OCR Scan     		PDF DA1304 DA1307 DA1321 DA1321-1 DA1338 DA1338-1 DA1338-2 DA1338-3 DA1349-2 DA1349-4 Gunn Diode Microwave Silicon Detector Diode DW9248 microwave waveguide Marconi gunn Silicon Detector UHF diode varactor diode filter varactor

    CMD1210

    Abstract: No abstract text available
    Text: ALPHA IND/ CTL MICROüJAVE □565303 OQQQGMO □ r OSE D T-Ô7 - / CMD SERIES GUNN DIODES Features • Available from 4 GHz through 110 GHz • High Efficiency • Low Noise • Maximum Output Power/Frequency Levels • Pulsed Devices with Several Watts


    OCR Scan     		PDF

    ODU microwave

    Abstract: No abstract text available
    Text: an A M P com pany Microwave Transmitter VCO 1 2.75 - 1 3.25 GHz MA87855 V3.00 Features • E x c e lle n t T u ning Linearity • Sm a l l and Lightw e ig h t • M odu lation and E x tem a lA F C C o n tro lc a n b e Comm on ly A p plied to th e T u ning B ia s


    OCR Scan     		PDF MA87855 WR-62, UG-419/U ODU microwave

    MA49156

    Abstract: Gunn Diode MA49156 x-band gunn diode MA49508 Gunn Diode x band gunn diode Gunn Diode 72 GHz gunn diode x band radar gunn diodes klystron
    Text: MA49000 Series Gallium Arsenide Gunn Diodes Features • HIGH RELIABILITY AND PERFORMANCE SUITABLE FOR MILITARY APPLICATIONS ■ BROADBAND ■ LOW NOISE CHARACTERISTICS FROM 5 TO 100 GHz ■ EASILY INCORPORATED INTO WAVEGUIDE, COAXIAL, MICROSTRIP OR STRIPLINE TRANSMISSION


    OCR Scan     		PDF MA49000 MA49139 MA49110 MA49156 Gunn Diode MA49156 x-band gunn diode MA49508 Gunn Diode x band gunn diode Gunn Diode 72 GHz gunn diode x band radar gunn diodes klystron

    Gunn Diode MA49156

    Abstract: gunn diodes MA49156 MA49148 MA49000 gunn diode x band radar x-band gunn diode MA49508 MA49152 Gunn Diode e band
    Text: an A M P company GaAs Gunn Diodes MA49000 V 2.00 Case Styles Features See appendix for complete dimensions • Low Noise Characteristics From 5 to 100 GHz • Catalog or Custom Tailored Diodes • Pulse or CW Operation Description The MA49000 series of Gallium Arsenide Gunn diodes is


    OCR Scan     		PDF MA49000 MA49000 Gunn Diode MA49156 gunn diodes MA49156 MA49148 gunn diode x band radar x-band gunn diode MA49508 MA49152 Gunn Diode e band

    Gunn Diode MA49156

    Abstract: MA49156 24 GHz Microwave Doppler Radar Speed Sensor MA49172 MA49508 Gunn Diode at power supply circuit MA49000 police radar detector x-band varactor diode MA49159
    Text: M/A-COM SEMICONDUCTOR HE D I 5b4E514 DOOlim 4 I T-ÖJ-II MA49000 Series Gallium Arsenide Gunn Diodes Features • HIGH RELIABILITY AND PERFORMANCE SUITABLE FOR MILITARY APPLICATIONS ■ BROADBAND ■ LOW NOISE CHARACTERISTICS FROM 5 TO 100 GHz ■ EASILY INCORPORATED INTO


    OCR Scan     		PDF 5b4E514 MA49000 SbM2S14 DGD1424 T-07-11 Gunn Diode MA49156 MA49156 24 GHz Microwave Doppler Radar Speed Sensor MA49172 MA49508 Gunn Diode at power supply circuit police radar detector x-band varactor diode MA49159

    Gunn Diode MA49156

    Abstract: GaAs Gunn Diode 24 gunn diodes Gunn Diode e band x band gunn diode X-band marine radar gunn diode x band radar Gunn Diode 72 GHz MA49172 MA49156
    Text: an A M P company GaAs Gunn Diodes MA49000 V 2.00 Case Styles Features See appendix for complete dimensions • Low Noise Characteristics From 5 to 100 GHz • Catalog or Custom Tailored Diodes • Pulse or CW Operation Description The MA49000 series of Gallium Arsenide Gunn diodes is


    OCR Scan     		PDF MA49000 MA49000 Gunn Diode MA49156 GaAs Gunn Diode 24 gunn diodes Gunn Diode e band x band gunn diode X-band marine radar gunn diode x band radar Gunn Diode 72 GHz MA49172 MA49156

    gunn oscillator wr62

    Abstract: No abstract text available
    Text: an A M P com pany Microwave Transmitter VCO 14.40-15.53 GHz MA87922 V3.00 Features E x c e lle n t T u ning Linearity Sm a l l and Lightw e ig h t M odu lation and E x tem a lA F C C o n trD lca n b e Comm o n ÿ A p plied to th e T u ning B ia s ± 0 .07%


    OCR Scan     		PDF MA87922 gunn oscillator wr62

    Untitled

    Abstract: No abstract text available
    Text: a/7 A M P com pany Varactor Controlled Oscillator 21.20-23.60 GHz MA87827 V3.00 Features r • Excellent Tuning Linearity • Small and Lightweight • Modulation and External AFC Control Can be Commonly Applied to Electronic Tuning Bias • ±0.05% Frequency vs. Temperature Stability


    OCR Scan     		PDF MA87827

    8-12 GHz Yig Tuned Oscillator

    Abstract: PM7015X yig oscillator hp electromagnetic pulse generator jammer SIVERS yig PM7892 PM7288X 8-12 GHz Yig Tuned filter PM7101X x-band waveguide isolators
    Text: PHILIPS & Microwave Products s iv a ts a m The Company SIVERS IMA In January 1984 the two microwave companies Sivers Lab est. 1951 and I.M.A. (est. 1975) were merged into one of the leading European supplier of microwave products: SIVERS IMA AB. The main product lines are Switches, Rotary Joints,


    OCR Scan     		PDF MIL-C-45662) S-126 17173-SILAB-S S-163 8-12 GHz Yig Tuned Oscillator PM7015X yig oscillator hp electromagnetic pulse generator jammer SIVERS yig PM7892 PM7288X 8-12 GHz Yig Tuned filter PM7101X x-band waveguide isolators

    police radar detector

    Abstract: DOPPLER 10.525 ghz radar detector detector FM TRANSMITTER CIRCUIT Gunn Diode at power supply circuit police radar detector receiver police radar detector detector gunn diode x band amplifier police radar detector local oscillator frequency varactor diode for x band radar radar detector receiver
    Text: Glossary — Terms as used in this catalog ATTENUATOR — A PIN diode attenuator is a two terminal device capable of providing a prescribed RF attenuation based on the level of bias control applied. BARRIER HEIGHT — The barrier height of a Schottky junction determines the voltage current characteristics of that diode.


    OCR Scan     		PDF A01803 police radar detector DOPPLER 10.525 ghz radar detector detector FM TRANSMITTER CIRCUIT Gunn Diode at power supply circuit police radar detector receiver police radar detector detector gunn diode x band amplifier police radar detector local oscillator frequency varactor diode for x band radar radar detector receiver