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Abstract: wega 3140 smd marking code mfw cb pj 47 diode Diode MFW 26
Text: Identification systems Contents CATALOGUE 7 Identification systems Appendix Introduction A Terminal markers B Wire and cable markers C Device markers D Printing systems E Weidmüller Service V Index X Search according to Type or order number, Worldwide activities
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Untitled
Abstract: No abstract text available
Text: 8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18D, MT58L256L32D, MT58L256L36D 3.3V VDD, 3.3V I/O, Pipelined, DoubleCycle Deselect FEATURES • • • • • • • • • • • • • • • 100-Pin TQFP*
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100-pin
165-pin
119-Pin
MT58L512L18D
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Untitled
Abstract: No abstract text available
Text: 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM MT58L512L18P, MT58L256L32P, MT58L256L36P; MT58L512V18P, MT58L256V32P, MT58L256V36P 8Mb SYNCBURST SRAM 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES 100-Pin TQFP* • Fast clock and OE# access times
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100-lead
MT58L512L18P
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MT58L512L18PT-6
Abstract: MT58L256L32
Text: 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18P, MT58L256L32P, MT58L256L36P; MT58L512V18P, MT58L256V32P, MT58L256V36P 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES 100-Pin TQFP* • Fast clock and OE# access times
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100-lead
MT58L512L18P
MT58L512L18PT-6
MT58L256L32
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Untitled
Abstract: No abstract text available
Text: 8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18D, MT58L256L32D, MT58L256L36D 3.3V VDD, 3.3V I/O, Pipelined, DoubleCycle Deselect FEATURES • • • • • • • • • • • • • • • 100-Pin TQFP*
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100-pin
165-pin
119-Pin
MT58L512L18D
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Untitled
Abstract: No abstract text available
Text: 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18P, MT58L256L32P, MT58L256L36P; MT58L512V18P, MT58L256V32P, MT58L256V36P 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES 100-Pin TQFP* • Fast clock and OE# access times
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100-pin
165-pin
119-Pin
MT58L512L18P
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Untitled
Abstract: No abstract text available
Text: 8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM MT58L512L18D, MT58L256L32D, MT58L256L36D 8Mb SYNCBURST SRAM 3.3V VDD, 3.3V I/O, Pipelined, Double-Cycle Deselect FEATURES • • • • • • • • • • • • • • • 100-Pin TQFP*
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100-lead
119-bump
MT58L512L18D
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Untitled
Abstract: No abstract text available
Text: 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18P, MT58L256L32P, MT58L256L36P; MT58L512V18P, MT58L256V32P, MT58L256V36P 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES 100-Pin TQFP* • Fast clock and OE# access times
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100-pin
165-pin
119-Pin
MT58L512L18P
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MC68HC16Z1CFC16
Abstract: 10K SIP Resistor 3FW 94 lcd 2X20 RAM 62256 80C32MOD-ULE-DIP 3FW 59 80C32 MAX147EVC16-DIP MAX147EVC32-DIP
Text: 19-4751; Rev 1; 1/97 MAX147 Evaluation System/Evaluation Kit _Component List DESIGNATION QTY DESCRIPTION C1, C7–C14 9 0.01µF ceramic capacitors C2, C4, C6, C15, C17–C20 8 0.1µF ceramic capacitors C3 C5 C16 J1 J18 JU1, JU2, JU5 R1-R8
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MAX147
10-pin
MAX147BCPP
MAX872CPA
MAX393CPE
MAX666CPA
MAX495C3?
80C32
MC68HC16Z1CFC16
10K SIP Resistor
3FW 94
lcd 2X20
RAM 62256
80C32MOD-ULE-DIP
3FW 59
MAX147EVC16-DIP
MAX147EVC32-DIP
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Untitled
Abstract: No abstract text available
Text: 4Mb: 256K x 18, 128K x 32/36 3.3V I/O PIPELINED, DCD SYNCBURST SRAM MT58L256L18D, MT58L128L32D, MT58L128L36D 4Mb SYNCBURST SRAM 3.3V VDD, 3.3V I/O, Pipelined, Double-Cycle Deselect FEATURES • • • • • • • • • • • • • • • Fast clock and OE# access times
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100-lead
119-bump
MT58L256L18D
7/99a
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 3.3V I/O PIPELINED, DCD SYNCBURST SRAM 4Mb SYNCBURST SRAM MT58L256L18D1, MT58L128L32D1, MT58L128L36D1 3.3V VDD, 3.3V I/O, Pipelined, DoubleCycle Deselect FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD
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100-lead
119-pin
MT58L256L18D1
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marking 3U 3T 3C diode
Abstract: MICRON diode 2u micron sram MS-026 MT58L256L18DT-6
Text: 4Mb: 256K x 18, 128K x 32/36 3.3V I/O PIPELINED, DCD SYNCBURST SRAM MT58L256L18D, MT58L128L32D, MT58L128L36D 4Mb SYNCBURST SRAM 3.3V VDD, 3.3V I/O, Pipelined, Double-Cycle Deselect FEATURES • • • • • • • • • • • • • • • Fast clock and OE# access times
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MT58L256L18D,
MT58L128L32D,
MT58L128L36D
MT58L256L18D
marking 3U 3T 3C diode
MICRON diode 2u
micron sram
MS-026
MT58L256L18DT-6
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MICRON diode 2u
Abstract: marking 3U 3T 3C diode marking 2U 58 diode micron sram MS-026 MT58L256L18PT-6
Text: 4Mb: 256K x 18, 128K x 32/36 PIPELINED, SCD SYNCBURST SRAM MT58L256L18P, MT58L128L32P, MT58L128L36P; MT58L256V18P, MT58L128V32P, MT58L128V36P 4Mb SYNCBURST SRAM 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES • Fast clock and OE# access times
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MT58L256L18P,
MT58L128L32P,
MT58L128L36P;
MT58L256V18P,
MT58L128V32P,
MT58L128V36P
MT58L256L18P
MICRON diode 2u
marking 3U 3T 3C diode
marking 2U 58 diode
micron sram
MS-026
MT58L256L18PT-6
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MT58L256
Abstract: No abstract text available
Text: 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18P, MT58L256L32P, MT58L256L36P; MT58L512V18P, MT58L256V32P, MT58L256V36P 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES 100-Pin TQFP1 • Fast clock and OE# access times
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100-pin
165-pin
119-pin0,
119-Pin
MT58L512L18P
MT58L256
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Untitled
Abstract: No abstract text available
Text: 8Mb: 512K x 18, 256K x 32/36 PIPELINED, SCD SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18P, MT58L256L32P, MT58L256L36P; MT58L512V18P, MT58L256V32P, MT58L256V36P 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES 100-Pin TQFP1 • Fast clock and OE# access times
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100-pin
165-pin
119-pin0,
119-Pin
MT58L512L18P
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Untitled
Abstract: No abstract text available
Text: 8Mb: 512K x 18, 256K x 32/36 3.3V I/O, PIPELINED, DCD SYNCBURST SRAM 8Mb SYNCBURST SRAM MT58L512L18D, MT58L256L32D, MT58L256L36D 3.3V VDD, 3.3V I/O, Pipelined, DoubleCycle Deselect FEATURES • • • • • • • • • • • • • • • •
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100-pin
165-pin
119-pin
MT58L512L18D
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IS61LPS51236A-200TQLI
Abstract: IS61VPS51236A-200B2 IS61LPS102418A-200TQLI IS61LPS102418A IS61LPS25672A IS61LPS51236A IS61VPS102418A IS61VPS25672A IS61VPS51236A IS61VPS102418A-250TQL
Text: IS61VPS25672A IS61LPS25672A IS61VPS51236A IS61LPS51236A IS61VPS102418A IS61LPS102418A 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write
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IS61VPS25672A
IS61LPS25672A
IS61VPS51236A
IS61LPS51236A
IS61VPS102418A
IS61LPS102418A
1024K
100-Pin
MS-028
IS61VPS25672A,
IS61LPS51236A-200TQLI
IS61VPS51236A-200B2
IS61LPS102418A-200TQLI
IS61LPS102418A
IS61LPS25672A
IS61LPS51236A
IS61VPS102418A-250TQL
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IS61LPS25672A
Abstract: IS61LPS102418A IS61LPS51236A IS61VPS102418A IS61VPS25672A IS61VPS51236A IS61VPS102418A-250TQL IS61LPS51236A-250B3LI
Text: IS61VPS25672A IS61LPS25672A IS61VPS51236A IS61LPS51236A IS61VPS102418A IS61LPS102418A 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write
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IS61VPS25672A
IS61LPS25672A
IS61VPS51236A
IS61LPS51236A
IS61VPS102418A
IS61LPS102418A
1024K
100-Pin
MS-028
IS61VPS25672A,
IS61LPS25672A
IS61LPS102418A
IS61LPS51236A
IS61VPS102418A-250TQL
IS61LPS51236A-250B3LI
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j0810
Abstract: No abstract text available
Text: IS61VPS25672A IS61LPS25672A IS61VPS51236A IS61LPS51236A IS61VPS102418A IS61LPS102418A 256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS PIPELINED, SINGLE CYCLE DESELECT STATIC RAM FEATURES • Internal self-timed write cycle • Individual Byte Write Control and Global Write
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IS61VPS25672A
IS61LPS25672A
IS61VPS51236A
IS61LPS51236A
IS61VPS102418A
IS61LPS102418A
1024K
100-Pin
119-ball
VPS51236A,
j0810
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 PIPELINED, SCD SYNCBURST SRAM 4Mb SYNCBURST SRAM MT58L256L18P1, MT58L128L32P1, MT58L128L36P1; MT58L256V18P1, MT58L128V32P1, MT58L128V36P1 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES • Fast clock and OE# access times
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100-lead
MT58L256L18P1
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 PIPELINED, SCD SYNCBURST SRAM 4Mb SYNCBURST SRAM MT58L256L18P1, MT58L128L32P1, MT58L128L36P1; MT58L256V18P1, MT58L128V32P1, MT58L128V36P1 3.3V VDD, 3.3V or 2.5V I/O, Pipelined, Single-Cycle Deselect FEATURES • Fast clock and OE# access times
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100-lead
MT58L256L18P1
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 3.3V I/O PIPELINED, DCD SYNCBURST SRAM 4Mb SYNCBURST SRAM MT58L256L18D1, MT58L128L32D1, MT58L128L36D1 3.3V VDD, 3.3V I/O, Pipelined, DoubleCycle Deselect FEATURES • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD
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165-pin
100-pin
119-Pin
MT58L256L18D1
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SRAM timing
Abstract: No abstract text available
Text: 4Mb: 256K x 18, 128K x 32/36 3.3V I/O PIPELINED, DCD SYNCBURST SRAM 4Mb SYNCBURST SRAM MT58L256L18D1, MT58L128L32D1, MT58L128L36D1 3.3V VDD, 3.3V I/O, Pipelined, DoubleCycle Deselect FEATURES 100-Pin TQFP1 • Fast clock and OE# access times • Single +3.3V +0.3V/-0.165V power supply VDD
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165-pin
100-pin
119-Pin
MT58L256L18D1
SRAM timing
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Untitled
Abstract: No abstract text available
Text: ADVANCE M T58LC256K16/18E1 256K X 16/18 SYNCBURST SRAM MICRON I TECH N O LO G Y.ir.C SYNCHRONOUS SRAM 256KX 16/18 SRAM +3.3V SUPPLY, +2.5V I/O, FLOW-THROUGH AND SELECTABLE BURST MODE • • • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View
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OCR Scan
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T58LC256K16/18E1
256KX
MT5flLC256K16/18E1
Q022711
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