siemens Logo TDE manual
Abstract: wega 3140 smd marking code mfw cb pj 47 diode Diode MFW 26
Text: Identification systems Contents CATALOGUE 7 Identification systems Appendix Introduction A Terminal markers B Wire and cable markers C Device markers D Printing systems E Weidmüller Service V Index X Search according to Type or order number, Worldwide activities
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ANA016
Abstract: SSR014-0B IC61S25636D
Text: IC61S25632T/D IC61S25636T/D IC61S51218T/D Document Title 8Mb SyncBurst Pipelined SRAM Revision History Revision No History Draft Date Remark 0A 0B Initial Draft 1. Move the FT pin for user-configurable Flow throught or pipelineed operation, That pin can be
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IC61S25632T/D
IC61S25636T/D
IC61S51218T/D
IC61S51218D-200B
IC61S51218T-166TQI
IC61S51218D-166TQI
IC61S51218D-166B
IC61S51218T-133TQI
IC61S51218D-133TQI
IC61S51218D-133B
ANA016
SSR014-0B
IC61S25636D
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IS61SF25636
Abstract: IS61SF51218
Text: IS61SF25632T/D IS61LF25632T/D IS61SF25636T/D IS61LF25636T/D IS61SF51218T/D IS61LF51218T/D 256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM FEATURES ISSI PRELIMINARY INFORMATION NOVEMBER 2000 DESCRIPTION The ISSI IS61SF25632, IS61SF25636, IS61SF51218,
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IS61SF25632T/D
IS61LF25632T/D
IS61SF25636T/D
IS61LF25636T/D
IS61SF51218T/D
IS61LF51218T/D
IS61SF25632,
IS61SF25636,
IS61SF51218,
100-Pin
IS61SF25636
IS61SF51218
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IS61SPD25632
Abstract: IS61SPD25636
Text: IS61SPD25632T/D IS61LPD25632T/D IS61SPD25636T/D IS61LPD25636T/D IS61SPD51218T/D IS61LPD51218T/D 256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM FEATURES ISSI ADVANCE INFORMATION SEPTEMBER 2000 DESCRIPTION The ISSI IS61SPD25632, IS61SPD25636, S61SPD51218,
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IS61SPD25632T/D
IS61LPD25632T/D
IS61SPD25636T/D
IS61LPD25636T/D
IS61SPD51218T/D
IS61LPD51218T/D
IS61SPD25632,
IS61SPD25636,
S61SPD51218,
100-Pin
IS61SPD25632
IS61SPD25636
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Untitled
Abstract: No abstract text available
Text: IS61SPS25632T/D IS61LPS25632T/D IS61SPS25636T/D IS61LPS25636T/D IS61SPS51218T/D IS61LPS51218T/D 256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, SINGLE-CYCLE DESELECT STATIC RAM FEATURES ISSI PRELIMINARY INFORMATION SEPTEMBER 2000 DESCRIPTION The ISSI IS61SPS25632, IS61SPS25636, IS61SPS51218,
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IS61SPS25632T/D
IS61LPS25632T/D
IS61SPS25636T/D
IS61LPS25636T/D
IS61SPS51218T/D
IS61LPS51218T/D
100-Pin
119-pin
IS61LPS51218T-150TQ
IS61LPS51218D-150TQ
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IS61SPD25632
Abstract: IS61SPD25636
Text: IS61SPD25632T/D IS61LPD25632T/D IS61SPD25636T/D IS61LPD25636T/D IS61SPD51218T/D IS61LPD51218T/D 256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, DOUBLE-CYCLE DESELECT STATIC RAM FEATURES ISSI PRELIMINARY INFORMATION SEPTEMBER 2000 DESCRIPTION The ISSI IS61SPD25632, IS61SPD25636, S61SPD51218,
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IS61SPD25632T/D
IS61LPD25632T/D
IS61SPD25636T/D
IS61LPD25636T/D
IS61SPD51218T/D
IS61LPD51218T/D
IS61SPD25632,
IS61SPD25636,
S61SPD51218,
100-Pin
IS61SPD25632
IS61SPD25636
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Untitled
Abstract: No abstract text available
Text: IS61SPS25632T/D IS61LPS25632T/D IS61SPS25636T/D IS61LPS25636T/D IS61SPS51218T/D IS61LPS51218T/D 256K x 32, 256K x 36, 512K x 18 SYNCHRONOUS PIPELINE, SINGLE-CYCLE DESELECT STATIC RAM FEATURES ISSI ADVANCE INFORMATION SEPTEMBER 2000 DESCRIPTION The ISSI IS61SPS25632, IS61SPS25636, IS61SPS51218,
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IS61SPS25632T/D
IS61LPS25632T/D
IS61SPS25636T/D
IS61LPS25636T/D
IS61SPS51218T/D
IS61LPS51218T/D
100-Pin
119-pin
IS61LPS51218T-150TQ
IS61LPS51218D-150TQ
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4482161-Y, 4482181-Y, 4482321-Y, 4482361-Y 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD4482161-Y is a 524,288-word by 16-bit, the µPD4482181-Y is a 524,288-word by 18-bit, the µPD4482321-Y is a
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PD4482161-Y,
4482181-Y,
4482321-Y,
4482361-Y
PD4482161-Y
288-word
16-bit,
PD4482181-Y
18-bit,
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4482161-Y, 4482181-Y, 4482321-Y, 4482361-Y 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD4482161-Y is a 524,288-word by 16-bit, the µPD4482181-Y is a 524,288-word by 18-bit, the µPD4482321-Y is a
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PD4482161-Y,
4482181-Y,
4482321-Y,
4482361-Y
PD4482161-Y
288-word
16-bit,
PD4482181-Y
18-bit,
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4382161, 4382181, 4382321, 4382361 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD4382161 is a 524,288-word by 16-bit, the µPD4382181 is a 524,288-word by 18-bit, the µPD4382321 is a 262,144-word by 32-bit and the µPD4382361 is a 262,144-word by 36-bit synchronous static RAM fabricated with
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PD4382161,
PD4382161
288-word
16-bit,
PD4382181
18-bit,
PD4382321
144-word
32-bit
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4482161, 4482181, 4482321, 4482361 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD4482161 is a 524,288-word by 16-bit, the µPD4482181 is a 524,288-word by 18-bit, the µPD4482321 is a
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PD4482161,
PD4482161
288-word
16-bit,
PD4482181
18-bit,
PD4482321
144-word
32-bit
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD4382161, 4382181, 4382321, 4382361 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD4382161 is a 524,288-word by 16-bit, the µPD4382181 is a 524,288-word by 18-bit, the µPD4382321 is a 262,144-word by 32-bit and the µPD4382361 is a 262,144-word by 36-bit synchronous static RAM fabricated with
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PD4382161,
PD4382161
288-word
16-bit,
PD4382181
18-bit,
PD4382321
144-word
32-bit
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4442161, 4442181, 4442321, 4442361 4M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD4442161 is a 262,144-word by 16-bit, the µPD4442181 is a 262,144-word by 18-bit, the µPD4442321 is a
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PD4442161,
PD4442161
144-word
16-bit,
PD4442181
18-bit,
PD4442321
072-word
32-bit
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4482161, 4482181, 4482321, 4482361 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD4482161 is a 524,288-word by 16-bit, the µPD4482181 is a 524,288-word by 18-bit, the µPD4482321 is a
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PD4482161,
PD4482161
288-word
16-bit,
PD4482181
18-bit,
PD4482321
144-word
32-bit
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4382161, 4382181, 4382321, 4382361 8M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD4382161 is a 524,288-word by 16-bit, the µPD4382181 is a 524,288-word by 18-bit, the µPD4382321 is a
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PD4382161,
PD4382161
288-word
16-bit,
PD4382181
18-bit,
PD4382321
144-word
32-bit
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT µPD4442161, 4442181, 4442321, 4442361 4M-BIT CMOS SYNCHRONOUS FAST SRAM FLOW THROUGH OPERATION Description The µPD4442161 is a 262,144-word by 16-bit, the µPD4442181 is a 262,144-word by 18-bit, the µPD4442321 is a
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PD4442161,
PD4442161
144-word
16-bit,
PD4442181
18-bit,
PD4442321
072-word
32-bit
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GS816019T-250
Abstract: GSI errata
Text: Revision: 5/17/02 GS816019/33/37T Datasheet Errata Base datasheet: GS816019/33/37T, Rev.1.00, 3/2002 Product s covered in this supplement: GS816019/33/37T-250/225/200/166/150/133 Product specification(s) addressed by this supplement: Pin 14 Note: The specifications cited in the base datasheet for the products addressed by this errata remain in force except where
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GS816019/33/37T
GS816019/33/37T,
GS816019/33/37T-250/225/200/166/150/133
GS816019
100-Pin
GS816019T-250
GSI errata
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GSI errata
Abstract: GS88019A GS88033A GS88037A 37at
Text: Revision: 5/17/02 GS88019/33/37AT Datasheet Errata Base datasheet: GS88019/33/37AT, Rev.1.00, 3/2002 Product s covered in this supplement: GS88019/33/37AT-250/225/200/166/150/133 Product specification(s) addressed by this supplement: Pin 14 Note: The specifications cited in the base datasheet for the products addressed by this errata remain in force except where
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GS88019/33/37AT
GS88019/33/37AT,
GS88019/33/37AT-250/225/200/166/150/133
GS88019A
100-Pin
88019A
GSI errata
GS88033A
GS88037A
37at
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THERMAL Fuse m20 tf 115 c
Abstract: No abstract text available
Text: CONTA-CONNECT PVS PHOTOVOLTAIC-SYSTEM Components for electrical connectivity in photovoltaic facilities CONTA-CONNECT PVS – Components for electrical connectivity in photovoltaic facilities Overview Overview 2 The Company 3 PVS Solutions for Photovoltaic
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D-33161
THERMAL Fuse m20 tf 115 c
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Untitled
Abstract: No abstract text available
Text: Preliminary GS8160F18/32/36T-7.5/8/8.5/10/11 100 Pin TQFP Commercial Temp Industrial Temp 1M x 18, 512K x 32, 512K x 36 16Mb Sync Burst SRAMs Features • Flow through mode operation. Pin 14 = No Connect. • 2.5V +10%/-5% Core power supply • 2.5V or 3.3V I/O supply.
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GS8160F18/32/36T-7
100-lead
8160Z
8161Z.
GS18/362
1/2000DGS18/
2/2000E
2/2000E;
8160F18
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Untitled
Abstract: No abstract text available
Text: K7B803625M K7B801825M 256Kx36 & 512Kx18 Synchronous SRAM Document Title 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. History Draft Date Remark 0.0 Initial draft April. 10 . 1998 Preliminary 0.1 Change DC Characteristics. ISB value from 60mA to 90mA at -8
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K7B803625M
K7B801825M
256Kx36
512Kx18
512Kx18-Bit
300mA
350mA
260mA
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY l^ lld R O N 64K 64K x 18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, FULLY REGISTERED INPUTS AND OUTPUTS AND BURST COUNTER FEATURES • • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4.5, 5, 6, 7 and 8ns Fast OE: 5 and 6ns
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MT58LC64K18C4/A6
MT58LC64K18C4LG-8
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khm 313
Abstract: transistor HJ 388
Text: _ DATA SHEET_ MOS INTEGRATED CIRCUIT ¿¿PD4382162, 4382182, 4382322,4382362 8M-BIT CMOS SYNCHRONOUS FAST SRAM PIPELINED OPERATION Description The ¿¡PD4382162 is a 524,288-word by 16-bit, the ¿¡PD4382182 is a 524,288-word by 18-bit, ¿¡PD4382322 is a
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uPD4382162
uPD4382182
uPD4382322
uPD4382362
PD4382162
288-word
16-bit,
PD4382182
18-bit,
khm 313
transistor HJ 388
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY M I l^ n n N 64K +3.3VSUPPLY, FULLY REGISTERED INPUTS AND OUTPUTS AND BURST COUNTER FEATURES • • • • • • • • PIN ASSIGNMENT Top View Fast access times: 4 .5 ,5 ,6 ,7 and 8ns Fast OE: 5 and 6ns Single +3.3V ±5% pow er supply 5V-tolerant I /O
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MT58LC64K18C4/A6
MT58LC64K18C4LG-8
MT5SLC64K18C4/A6
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