GX-0300 ARLON Search Results

GX-0300 ARLON Result Highlights (5)

Part	Manufacturer	Description	Download
SCC433T-K03-004	Murata Manufacturing Co Ltd	2-Axis Gyro, 3-axis Accelerometer combination sensor
SCR410T-K03-004	Murata Manufacturing Co Ltd	1-Axis Gyro Sensor
CS-USBAM003.0-001	Amphenol Cables on Demand	Amphenol CS-USBAM003.0-001 Amphenol Premium USB 3.0/3.1 Gen1 Certified USB Type A-A Cable - USB 3.0 Type A Male to Type A Male [5.0 Gbps SuperSpeed] 1m (3.3')	Datasheet
CS-USBAB003.0-002	Amphenol Cables on Demand	Amphenol CS-USBAB003.0-002 Amphenol Premium USB 3.0/3.1 Gen1 Certified USB Type A-B Cable - USB 3.0 Type A Male to Type B Male [5.0 Gbps SuperSpeed] 2m (6.6')	Datasheet
CS-USBAB003.0-001	Amphenol Cables on Demand	Amphenol CS-USBAB003.0-001 Amphenol Premium USB 3.0/3.1 Gen1 Certified USB Type A-B Cable - USB 3.0 Type A Male to Type B Male [5.0 Gbps SuperSpeed] 1m (3.3')	Datasheet

GX-0300 ARLON Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15030/D MRF15030 MRF15030/D*
CAPACITOR chip murata mtbf Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136 Text: MOTOROLA Order this document by MRF15030/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15030 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15030/D MRF15030 MRF15030/D* CAPACITOR chip murata mtbf RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ rohm mtbf CAPACITOR chip mtbf GX-0300-55-22 IrL 1540 N RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ BD136 RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ transistor bd136
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ Abstract: RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 BD135 MJD47 MRF20060 MRF20060S RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x Text: MOTOROLA Order this document by MRF20060/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line RF Power Bipolar Transistors MRF20060 MRF20060S The MRF20060 and MRF20060S are designed for broadband commercial and industrial applications at frequencies from 1800 to 2000 MHz. The high	Original	PDF	MRF20060/D MRF20060 MRF20060S MRF20060 MRF20060S RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR CLASS 2 WATT 2 GHZ BD136 BD135 MJD47 RF NPN POWER TRANSISTOR CLASS 2 WATT 2.4 GHZ x
300 uF 450 VDC Mallory Capacitor Abstract: 365 pF variable capacitor variable capacitor 1 pf Capacitor dimensions MRF282S MRF282Z MRF282 Text: MOTOROLA Order this document by MRF282/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF282S MRF282Z RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for class A and class AB PCN and PCS base station applications at	Original	PDF	MRF282/D MRF282S MRF282Z MRF282S 300 uF 450 VDC Mallory Capacitor 365 pF variable capacitor variable capacitor 1 pf Capacitor dimensions MRF282Z MRF282
C8450 Abstract: MRF5S4140H Text: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these	Original	PDF	MRF5S4140H 28-volt MRF5S4140HR3 MRF5S4140HSR3 MRF5S4140H C8450
J0743 Abstract: MRF5S4140H j0810 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HR3 Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these	Original	PDF	MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 J0743 MRF5S4140H j0810 100B121JP500X A114 A115 AN1955 C101 JESD22
MRF5S4140H Abstract: No abstract text available Text: Document Number: MRF5S4140H Rev. 0, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these	Original	PDF	MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 MRF5S4140H
Untitled Abstract: No abstract text available Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15090/D MRF15090 DEVICEMRF15090/D
CAPACITOR chip murata mtbf Abstract: IrL 1540 N CAPACITOR chip mtbf motorola 1550 BD135 BD136 MJD47 MRF15090 MUR5120T3 MURATA ERIE CAPACITOR Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15090/D MRF15090 CAPACITOR chip murata mtbf IrL 1540 N CAPACITOR chip mtbf motorola 1550 BD135 BD136 MJD47 MRF15090 MUR5120T3 MURATA ERIE CAPACITOR
CAPACITOR chip murata mtbf Abstract: BD136 Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 22MAR02 The RF Line MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15090/D MRF15090 MRF15090 MRF15090/D CAPACITOR chip murata mtbf BD136
BD135 Abstract: BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727 Text: MOTOROLA Order this document by MRF20030/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron Bipolar Line MRF20030 RF Power Bipolar Transistor 30 W, 2.0 GHz NPN SILICON BROADBAND RF POWER TRANSISTOR • Specified 26 Volts, 2.0 GHz, Class AB, Two–Tones Characteristics	Original	PDF	MRF20030/D MRF20030 BD135 BD136 MJD47 MRF20030 RF NPN POWER TRANSISTOR C 2 WATT 2 GHZ MOTOROLA 727
CAPACITOR chip murata mtbf Abstract: MUR5120 irl 1520 MUR5120T3 IrL 1540 N 462 variable capacitor mallory capacitor 1500 uF CAPACITOR chip mtbf MRF15090 rohm mtbf Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15090/D MRF15090 DEVICEMRF15090/D CAPACITOR chip murata mtbf MUR5120 irl 1520 MUR5120T3 IrL 1540 N 462 variable capacitor mallory capacitor 1500 uF CAPACITOR chip mtbf MRF15090 rohm mtbf
BD136 Abstract: No abstract text available Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA NPN Silicon RF Power Transistor LAST SHIP 15MAR02 The RF Line MRF15090 Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15090/D MRF15090 MRF15090 DEVICEMRF15090/D BD136
CAPACITOR chip murata mtbf Abstract: IrL 1540 N CAPACITOR chip mtbf transistor bd135 transistor motorola 351 BD135 BD136 MJD47 MRF15090 MUR5120T3 Text: MOTOROLA Order this document by MRF15090/D SEMICONDUCTOR TECHNICAL DATA Advance Information The RF Line MRF15090 NPN Silicon RF Power Transistor Designed for 26 volts microwave large–signal, common emitter, class A and class AB linear amplifier applications in industrial and commercial FM/AM	Original	PDF	MRF15090/D MRF15090 MRF15090/D* CAPACITOR chip murata mtbf IrL 1540 N CAPACITOR chip mtbf transistor bd135 transistor motorola 351 BD135 BD136 MJD47 MRF15090 MUR5120T3

MRF5S4140H Abstract: No abstract text available Text: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these	Original	PDF	MRF5S4140H MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 MRF5S4140H
22 pf capacitor datasheet Abstract: 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HR3 MRF5S4140HSR3 J0743 Text: RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 LIFETIME BUY Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these	Original	PDF	MRF5S4140HR3 MRF5S4140HSR3 28-volt MRF5S4140HR3 MRF5S4140H 22 pf capacitor datasheet 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HSR3 J0743
capacitor atc 470 pf Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF373ALR1 MRF373ALSR1 Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these	Original	PDF	MRF373ALR1 MRF373ALSR1 capacitor atc 470 pf
MRF373AR1 Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies from 470 to 860 MHz. The high gain and broadband performance of these	Original	PDF	MRF373AR1 MRF373ALSR1
J103 transistor 3 pin Abstract: J103 transistor C6B3 UT-85-M17 Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897 Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 – 970 MHz.	Original	PDF	MRF897 J103 transistor 3 pin J103 transistor C6B3 UT-85-M17
J297 Abstract: balun 300 75 ohm transistor bd136 150 watts power amplifier layout Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF899 Designed for 26 Volt UHF large–signal, common emitter, Class AB linear amplifier applications in industrial and commercial FM / AM equipment operating in the range 800 – 960 MHz.	Original	PDF	MRF899 J297 balun 300 75 ohm transistor bd136 150 watts power amplifier layout
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF897R Designed for 24 Volt UHF large–signal, common emitter, class–AB linear amplifier applications in industrial and commercial FM/AM equipment operating in the range 800 – 970 MHz.	Original	PDF	MRF897R MRF897R DL110/D)
MRF6S21100H Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110	Original	PDF	MRF6S21100H MRF6S21100HR3 MRF6S21100HSR3 MRF6S21100HR3 MRF6S21100H
atc100b102jt500xt Abstract: CDR33BX104AKWY ATC100B5R1JT500XT CRCW08051000FKTA ATC100B150JT500XT MRF6S21100H GX-0300-55 A114 A115 AN1955 Text: Freescale Semiconductor Technical Data Document Number: MRF6S21100H Rev. 7, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21100HR3 MRF6S21100HSR3 Designed for W - CDMA base station applications with frequencies from 2110	Original	PDF	MRF6S21100H MRF6S21100HR3 MRF6S21100HSR3 MRF6S21100HR3 atc100b102jt500xt CDR33BX104AKWY ATC100B5R1JT500XT CRCW08051000FKTA ATC100B150JT500XT MRF6S21100H GX-0300-55 A114 A115 AN1955
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21060 MRF21060R3 MRF21060SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 2.1 to 2.2 GHz. Suitable for W–CDMA, CDMA, TDMA, GSM and multicarrier	Original	PDF	Therm2170 MRF21060 MRF21060R3 MRF21060SR3

GX-0300 ARLON Search Results

GX-0300 ARLON Result Highlights (5)

GX-0300 ARLON Datasheets Context Search

Untitled

CAPACITOR chip murata mtbf

RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

300 uF 450 VDC Mallory Capacitor

C8450

J0743

MRF5S4140H

Untitled

CAPACITOR chip murata mtbf

CAPACITOR chip murata mtbf

BD135

CAPACITOR chip murata mtbf

BD136

CAPACITOR chip murata mtbf

MRF5S4140H

22 pf capacitor datasheet

capacitor atc 470 pf

MRF373AR1

J103 transistor 3 pin

J297

Untitled

MRF6S21100H

atc100b102jt500xt

Untitled