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    H-BRIDGE N P MOS Search Results

    H-BRIDGE N P MOS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    H-BRIDGE N P MOS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    4707 N Channel MOSFETs

    Abstract: MSK3014
    Text: M.S.KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3014 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: P and N Channel MOSFETs for Ease of Drive 100 Volt, 10 Amp Full H-Bridge Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: M.S.KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3014 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: P and N Channel MOSFETs for Ease of Drive 100 Volt, 10 Amp Full H-Bridge Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: AMG-PI004 H-Bridge/Full Bridge Array of P and N channel MOSFETs 1. Functional Description of the AMG-PI004 The AMG-PI004 is built by utilizing one of the latest state-of-the-art trench technologies to achieve ultra low resistance RDS on for the power MOSFETs. The complementary H-bridge


    Original     		PDF AMG-PI004 AMG-PI004

    MSK3014

    Abstract: 3 AMP STEPPER DRIVE IC
    Text: ISO-9001 CERTIFIED BY DSCC H-BRIDGE MOSFET POWER MODULE M.S.KENNEDY CORP. 3014 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: P and N Channel MOSFETs for Ease of Drive 100 Volt, 10 Amp Full H-Bridge Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity


    Original     		PDF ISO-9001 MSK3014 3 AMP STEPPER DRIVE IC

    drive motor 10A with transistor P channel MOSFET

    Abstract: 20 Amp 100 volt mosfet
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3014 8170 Thompson Road Cicero, N.Y. 13039 315 699-9201 FEATURES: P and N Channel MOSFETs for Ease of Drive 100 Volt, 10 Amp Full H-Bridge Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity


    Original     		PDF ISO-9001 drive motor 10A with transistor P channel MOSFET 20 Amp 100 volt mosfet

    4707 N Channel MOSFETs

    Abstract: P channel MOSFET 10A schematic drive motor 10A with transistor P channel MOSFET MSK3014 transistor servo drive S 170 MOSFET TRANSISTOR 10 amp H-bridge Mosfet stepper STEPPER MOTOR DRIVE 6 AMP all high power mosfet transistor drive motor 10A with transistor
    Text: ISO-9001 CERTIFIED BY DSCC M.S.KENNEDY CORP. H-BRIDGE MOSFET POWER MODULE 3014 4707 Dey Road Liverpool, N.Y. 13088 315 701-6751 FEATURES: P and N Channel MOSFETs for Ease of Drive 100 Volt, 10 Amp Full H-Bridge Isolated Package for Direct Heat Sinking, Excellent Thermal Conductivity


    Original     		PDF ISO-9001 4707 N Channel MOSFETs P channel MOSFET 10A schematic drive motor 10A with transistor P channel MOSFET MSK3014 transistor servo drive S 170 MOSFET TRANSISTOR 10 amp H-bridge Mosfet stepper STEPPER MOTOR DRIVE 6 AMP all high power mosfet transistor drive motor 10A with transistor

    C10535E

    Abstract: h bridge
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD16813 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16813 is a monolithic dual H bridge driver circuit which uses power MOS FETs in its driver stage. By complementing the P channel and N channel of the output stage, the circuit current has been substantially inproved


    Original     		PDF PD16813 PD16813 C10535E h bridge

    TRANSISTOR h2f

    Abstract: C10535E RH2F
    Text: DATA SHEET MOS INTEGRATED CIRCUIT µPD16814 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The µPD16814GS is a monolithic dual H bridge driver circuit employing a power MOS FET for its driver stage. By complementing the P channel and N channel of the output stage, the circuit current is substantially improved as


    Original     		PDF PD16814 PD16814GS TRANSISTOR h2f C10535E RH2F

    50P03L

    Abstract: Q67060-S6160 P-TO263-7-6 B152-H8512-G1-X-7600
    Text: Product Brief BTS 7960B High Current PN Half Bridge N o v a l i t h I C TM T H E B T S 7 9 6 0 B is a fully integrated high current half bridge for motor drive applications. It is part of the NovalithIC TM family containing one p-channel highside MOSFET and one n-channel lowside


    Original     		PDF 7960B B152-H8512-G1-X-7600 50P03L Q67060-S6160 P-TO263-7-6 B152-H8512-G1-X-7600

    50P03L

    Abstract: 4278G Q67060-S6160 7960B BTS7960B
    Text: Preliminary Product Brief BTS 7960B High Current PN Half Bridge N o v a l i t h I C TM T H E B T S 7 9 6 0 B is a fully integrated high current half bridge for motor drive applications. It is part of the NovalithIC TM family containing one p-channel highside MOSFET and one n-channel lowside


    Original     		PDF 7960B B152-H8512-X-X-7600 50P03L 4278G Q67060-S6160 7960B BTS7960B

    7930B

    Abstract: 50P03L BTS 7930B SPD50P03L
    Text: Product Brief BTS 7930B High Current PN Half Bridge N o v a l i t h I C TM T H E B T S 7 9 3 0 B is a fully integrated high current half bridge for motor drive applications. It is part of the NovalithIC TM family containing one p-channel highside MOSFET and one n-channel lowside


    Original     		PDF 7930B B152-H8645-X-X-7600 7930B 50P03L BTS 7930B SPD50P03L

    Untitled

    Abstract: No abstract text available
    Text: HARRIS H S E M I C O N D U C T O R P 2 1 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver October 1995 Description Features • I Drives N-Channel MOSFET Half Bridge The H IP 2100 is a high frequency, 100V Half Bridge N-Channel M O S F E T driver IC, available in 8 lead plastic


    OCR Scan     		PDF 00V/2A 116VDC

    ptc 205 diode

    Abstract: PTC 6526-LQ
    Text: OMH41Q DUAL, LOW VOLTAGE, LOW R DS on > MOSFET H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE Dual 100 Volt, 15 To 20 A m p H -B rid g e With C u r re n t A n d T e m p e ra tu r e S e n s in g In A L o w Profile Pl astic Package FEATURES • • • • • • H-Bridge Configuration


    OCR Scan     		PDF OMH41Q 100pm ptc 205 diode PTC 6526-LQ

    stepper motor em 235

    Abstract: AN9405 schematic diagram UPS 600 Power free em 235 stepper HIP4081A HIP4081 pwm controller HIP4081AIP HIP4080A
    Text: H A R R IS X Semiconductor H I P 4 8 1 A 80V/2.5A Peak, High Frequency Full Bridge FET Driver N o vem b er 1996 Description Features Independently Drives 4 N-Channel FET in Half Bridge or Full Bridge Configurations T he H IP 40 81 A is a high frequency, m edium volta ge Full


    OCR Scan     		PDF HIP4081A 95VDC 1000pF MS-013-AC stepper motor em 235 AN9405 schematic diagram UPS 600 Power free em 235 stepper HIP4081 pwm controller HIP4081AIP HIP4080A

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET MOS INTEGRATED CIRCUIT ;t P D 16814 MONOLITHIC DUAL H BRIDGE DRIVER CIRCUIT DESCRIPTION The ¿¡PD16814GS is a monolithic dual H bridge driver circuit employing a power MOS FET for its driver stage. By complementing the P channel and N channel of the output stage, the circuit current is substantially improved as


    OCR Scan     		PDF PD16814GS

    Untitled

    Abstract: No abstract text available
    Text: National July 1996 Semiconductor" NDS8858H Complementary MOSFET Half Bridge General Description Features T hese C o m p le m e n ta ry MOSFET h a lf b rid g e devices are p ro d u ce d u sin g N a tio n a l's p ro p rie ta ry , h ig h cell d e n s ity , D M O S te c h n o lo g y . T h is ve ry


    OCR Scan     		PDF NDS8858H

    ptc 205 diode

    Abstract: No abstract text available
    Text: 0MH41Q DUAL, LOW VOLTAGE, LOW R DS on > MOSFET H-BRIDGE CIRCUIT IN A PLASTIC PACKAGE Dual 100 Volt. 15 To 20 A m p H - B r i d g e With C u rre n t A nd T e m p e ra tu re S ensin g In A L o w P r o f i l e P la s t i c P a c k a g e FEATURES • H-Bridge Configuration


    OCR Scan     		PDF 0MH41Q ptc 205 diode

    Untitled

    Abstract: No abstract text available
    Text: V IS H A Y - S i4 5 0 0 D Y New Product Vishay Siliconix Complementary MOSFET Half-Bridge N- and P-Channel PRODUCT SUMMARY V d s (V) N-Channel 20 P-Channel Id (A) r D S (o n )


    OCR Scan     		PDF S-00269-- 26-Apr-99 4500DY

    Untitled

    Abstract: No abstract text available
    Text: f l l H A R R IS H S E M I C O N D U C T O R 4 8 1 80V/2.5A Peak, High Frequency Full Bridge FET Driver March 1995 Description Features • I P Independently Drives 4 N-Channel FET in Half Bridge o r Full Bridge Configurations T h e HIP4081 is a high frequency, medium voltage Full Bridge NChannel FET driver IC, available in 20 lead plastic S O IC and DIP


    OCR Scan     		PDF HIP4081 M302271

    Untitled

    Abstract: No abstract text available
    Text: F e b ru a ry 1 9 9 6 N NDS8852H Complementary MOSFET Half Bridge General Description Features T hese C om plem entary MOSFET h alf bridge devices are p roduced using N ational's proprietary, high cell density, DMOS technology. This very high density process is especially


    OCR Scan     		PDF NDS8852H NDS8852H 193tQ

    NDM3000

    Abstract: SOIC-16
    Text: May 1996 N N D M 3000 3 Phase Brushless Motor Driver General Description Features The NDM 3000 three p h ase brushless m o to r driver consists o f three N -C hannel and P-C hannel MOSFETs in a h alf bridge configuration. T hese devices are prod u ced using N ational's proprietary,


    OCR Scan     		PDF NDM3000 NDM3000 SOIC-16

    LTA 902

    Abstract: NDS8852H NDS8852H cmos Complementary MOSFET Half Bridge
    Text: F eb ru ary 1 9 9 6 N N DS8852H Complementary MOSFET Half Bridge General Description Features T h e se C o m p le m e n ta r y M O SFET h a lf b rid g e d e v ic e s are p rodu ced u s in g N a tio n a l's p rop rietary, h ig h c e ll d e n s ity , DM O S te c h n o lo g y .


    OCR Scan     		PDF NDS8852H NDS8852H 0D33347 LTA 902 NDS8852H cmos Complementary MOSFET Half Bridge

    Untitled

    Abstract: No abstract text available
    Text: Temic s,„eu_ Si9978DW Configurable H-Bridge Driver Features • H -B ridgc o r D ual H alf-B ridge O p eratio n • 20- to 40-V Supply • Static dc O p eratio n • • • C ross-C onduction P rotected C urrent Limit U ndervoltage Lockout


    OCR Scan     		PDF Si9978DW P-38384-- 9978DW P-38384--Rev.

    Untitled

    Abstract: No abstract text available
    Text: F E N W A L D E L E C T R O N IC S NTC / PTC Thermistors APPLICATION NOTE 9 LINEARIZATION Thermistors are often used in a bridge circuit w h ere th e m ain concern is bridge Referring to the g ra p h , the follow ing should be noted: balance at a required tem perature. W h e n used


    OCR Scan     		PDF