H0400 Search Results

LN 358

Contextual Info: REV. PART NUMBER LCM-H04004DWF UNCONTROLLED DOCUMENT CHARACTER DETAIL 3.53 [0.139] 2.78 C0.109] 0,50 [0,020] - 0.75 [0,030] 0.55 [0.022] £ 0,07 [0,003] CAUTION: STATIC SENSITIVE DEVICE 4 .8 9 CO , 1 9 3 ] 6 .0 9 FOLLOW PROPER E.5.D. HAN DUNG PROCEDURES WHEN WORKING WITH THIS PART,

Contextual Info: UNCONTROLLED DOCUMENT SC-.1.5 PART NUMBER REV. LCM -H04002DW N—G PRELIMINARY IN P / N CHARACTER DETAIL DIR 3.70 [0.146] 3 ,S0 [0,126] - j - - - | | — 0,50 [0,020] 0.60 E0.024] - - I I - - I - 0.65 C0.026] CAUTION: STATIC SENSITIVE DEVICE “ f r- 0.05 [0.002] I

LCM-H04002DWN

Contextual Info: UNCONTROLLED DOCUMENT PART REV. NUM BER LCM-H04002DWN CHARACTER DETAIL 3 .7 0 3 ,S 0 [0 ,1 2 6 ] H 0 .6 0 CAUTION: STATIC SENSITIVE DEVICE FOLLOW PROPER E.S.D. HANDLING PROCEDURES WHEN WORKING WITH THIS PART. CO.0 2 4 ] -A -| | — 0 ,5 0 I- - I“f 5 .5 5

Contextual Info: H04003 III ic ily I 1244.16 M Hz OC-48 Sonet VCSO ‘ SA WFrequency Stabilization Fundamental-Mode Oscillation at 1244.16 MHz A Rugged, Compact General-Purpose Oscillator The frequency of this oscillator is stabilized by surface-acoustic-wave SAW technol­

aom drive

Contextual Info: UNCONTROLLED DOCUMENT PART NUMBER REV. LCM-H04004DSF/A CHARACTER DETAIL 3.53 [0.139] 2,78 [0,109] 0,50 [0,020] - H 0,75 [0,030] 0,55 [0,022] £ 0,07 [0,003: CAUTION: STATIC SENSITIVE DEVICE FOLLOW PROPER E.S.D. HANDLING PROCEDURES WHEN WORKING WITH THIS PART.

MD10

Contextual Info: UNCONTROLLED DOCUMENT REV. cu o r\ us Ml ru <f ru 1_1 o \D \0 LU s 1-1 u> CO -—1 LD LCM-H04004DSR/D2T A Ac KE DATE 4 .1 9 .0 7 2 8 0 .2 0 [11.031] 4 .0 5 [0 .1 5 9 ] 2 6 2 .0 [1 0 .3 1 5 ] B E Z E L 13.15 [0 .5 1 8 ] - 14.90 [0 .5 8 7 ] - 2 5 6 .0 0 [1 0 ,0 7 9 ] V A -

6MBI25S-120-50

Abstract: 6MBI25S120-50 6MBI25S-120 ED-4701 MS5F6212 MS5F6209
Contextual Info: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI25S-120-50 RoHS compliant product Spec. No. : MS5F 6171 Jul. 21 ‘05 K.Muramatsu Jul. 22 ‘05 T.Miyasaka T.Hosen Jul. 22 ‘05 K.Yamada MS5F 6171 1 14 H0400407b R e v i s e d Date Jul.-21-’05 ClassiInd.

6MBI75S-120-50

Abstract: high temperature reverse bias 6MBI75S12050 ED-4701 6mbi75s-120-5 high temperature reverse bias IGBT
Contextual Info: SPECIFICATION Device Name : IGBT MODULE RoHS compliant product Type Name Spec. No. Apr. 26 ‘05 : : 6MBI75S-120-50 MS5F 6104 K.Muramatsu T.Hosen Apr. 26 ‘05 S.Ogawa K.Yamada a MS5F 6104 1 14 H0400407b R e v i s e d Date Apr.-26-’05 ClassiInd. fication

RFM DIP16-8

Contextual Info: IRFIMI H04002 400.0 M Hz Voltage Controlled SAW Oscillator 1 SA WFrequency Stabilization Fundamental-Mode Oscillation at 400.0 MHz A Rugged, Compact General-Purpose Oscillator The frequency of this oscillator is stabilized by surface-acoustic-wave SAW technol­

LCM-H04002DSR

Abstract: led dot matrix driver 5x8
Contextual Info: UNCONTROLLED DOCUMENT REV, CHARACTER DETAIL A PART NUMBER REV. LCM-H04002DSR A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. # 1 1 1 4 9 . DATE 4 .1 9 .0 7 3.70 [0.146] - 0,50 [0,020] 3 ,S0 [0,126] 0.60 :0.024] CAUTION: STATIC SENSITIVE DEVICE FOLLOW PROPER E.S.D. HANDLING PROCEDURES

6MBI15S-120-50

Abstract: MS5F6209 TT 6170 ED-4701 6170 TC a3015 6mbi15 MS5F MS5F6212
Contextual Info: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI15S-120-50 RoHS compliant product Spec. No. : MS5F 6170 Jul. 21 ‘05 K.Muramatsu Jul. 22 ‘05 T.Miyasaka T.Hosen Jul. 22 ‘05 K.Yamada MS5F 6170 1 14 H0400407b R e v i s e d Date Jul.-21-’05 ClassiInd.

RFM SAW Oscillator

Abstract: H04001 RFM DIP16-8
Contextual Info: H04001 RIFIM L 1000.0 MHz Voltage Controlled SAW Oscillator_ SA WFrequency Stabilization Fundamental-Mode Oscillation at 1000.0 MHz A Rugged, Compact General-Purpose Oscillator The frequency of this oscillator is stabilized by surface-acoustic-wave SAW tech­

MD10

Contextual Info: PART NUMBER REV. LCM-H04004DSF/D2T A UNCONTROLLED DOCUMENT REV. E.C.N. NUMBER AND REVISION COMMENTS DATE 4.19.07 E.C.N. #11148. 288.3 [11.350] 03,20 [00.126] 4 PL S. A nj nj o Ro*—i1_l ru o c6 ro Lxj t u n ] < f n ] ^ I I I I . I I 'J. * — 1 M o o ^ oo ”

1MBH20D-060-S06TT

Contextual Info: M e ssrs. R o ckw eil Autom ation C o .Ltd. SPECIFICATION IG BT o! nny o use property lliu lliv for ¡5 h«ruin n ui l f i e r s o i'v c r wliM fie s f in i i June-11-1998 Date w»y ¡ n í o r ru n I i on M S5F-4086 uny They : No. lu Un* nrid Spec. i l rs<:U>svO

Contextual Info: Target Specification TENTATIVE This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

Contextual Info: DATE DRAWN CHECKED CHECKED Jan-18-&#39;02 Jan-18-&#39;02 Jan-18-&#39;02 NAME DWG.NO. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any

TJS10

Abstract: fuji IGBT e2ba
Contextual Info: Ratings and characteristics of Fuji IGBT 1 M B H 1 OD . Out!ine Drawing 6 2. Equivalent circuit C:Collector FWD C O N N F C T IO N CATE <2 > C O L L E C T O R O © D 3. Absolute maximum ratings E M IT T E R ( 10=25*0 ) Symbols Rat ings Collector-Emitter Voltage

DDD4425

Abstract: DDD4432 DDD443D
Contextual Info: SPEC 1F I C A T I O N DEVICE NAME TTPE NAME SPEC. No. G DATE B T Jun.-25-1998 r# F u This \ ; DATE 0RAW N¡ / U NAME j i Specification E is l e subject c t to r i c change C o . , Ltd. without notice. APPROVED Fuji Electric CoJLtd. K .' íÍ ' u a ^ i^li.

GDM207

Contextual Info: 22307=12 O D Ü M m T2b • ‘ S P E C I F I C A T I ON DEVICE NAME : TYPE NAME : SPEC. No. : I GBT 1M B H 2 0 D - 0 6 0 M S5F3686 M I _ :_ Jun. -25-1996 F uj i E l e c t r i c Co., Ltd. This Specification is subject to change without notice.

Contextual Info: S P E C I F I C A T I ON DEVICE NAHE :_ | g g j TYPE NAMF 1 M B H 5 0 — Of i O SPEC. No. MS 5 F 3 5 2 4 DATE : Jun. -25-1996 Fuji DATE DRAWN CHECKED NAME E l e c t r i c This Specification is subject to change without noti ce. APPROVED Fuji Electric CoJJd.

ESJA52-12A

Abstract: HIGH VOLTAGE DIODE 12kv 22VZ
Contextual Info: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA52-12A made by FUJI ELECTRIC CO.LTD. 2. OUT VIEW Shape and dimensions are described in Fig. 3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.

t32 1-l

Contextual Info: Ratings and characteristics of Fuji IGBT 1 Í V 1 B H 3 D — 1 2 2. Equivalent circuit 1. Out Iine Drawing C:Collector î G :Gate FWD o Ò E:Emitter C O M N FC T I ON SATE CO LLECTO R © E M IT T E R 3. Absolute maximum ratings . C Tc=250C Ratings

HIGH VOLTAGE DIODE kv

Abstract: ESJA82-10A 223S7
Contextual Info: 1. SCOPE This specification provide the ratings and the requirements for high voltage si[icon diode ESJA82-10A made by FUJ1 ELECTR1C CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION . The diode shall be marked with Cathode Mark and Lot No.

DIODE 914

Abstract: ESJA53-18A GDD4775
Contextual Info: 1. SCOPE This specification provide the ratings and the requirements for high voltage silicon diode ESJA53-18A nade by RJJI ELECTRIC CO.,LTD. 2. OUT VIEW Shape and dimensions are described in Fig.3. 3. IDENTIFICATION The diode shall be marked with Cathode Mark and Lot No.