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    H11G3 Price and Stock

    onsemi H11G3

    OPTOISO 5.3KV DARL W/BASE 6DIP
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    onsemi H11G3W

    OPTOISO 5.3KV DARL W/BASE 6DIP
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    onsemi H11G3S

    OPTOISO 5.3KV DARL W/BASE 6SMD
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    onsemi H11G3M

    OPTOISO 7.5KV DARL W/BASE 6DIP
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    onsemi H11G33S

    OPTOISO 5.3KV DARL W/BASE 6SMD
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    H11G3 Datasheets (32)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H11G3 Fairchild Semiconductor High Voltage Photodarlington Optocoupler Original PDF
    H11G3 Fairchild Semiconductor 6-Pin DIP High Voltage Photodarlington Output Optocoupler Original PDF
    H11G3 Isocom Components 3V, 60mA high voltage darlington output optically coupled isolator Original PDF
    H11G3 On Semiconductor Phototransistor, 6-Pin, DIP, Optoisolators Transistor Darlington Output(On Chip Resistor) Original PDF
    H11G3 Fairchild Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - High-Voltage Photo Darlington Output 5.3kV 55V Min. BV CEO Scan PDF
    H11G3 General Instrument 55 V, high voltage photodarlington optocoupler Scan PDF
    H11G3 Isocom Components Optoelectronics Data Book 1996 Scan PDF
    H11G3 Motorola Switchmode Datasheet Scan PDF
    H11G3 Motorola European Master Selection Guide 1986 Scan PDF
    H11G3 Motorola Optoelectronics Device Data 1988 Scan PDF
    H11G3300 Fairchild Semiconductor 6-Pin DIP High Voltage Photodarlington Output Optocoupler Original PDF
    H11G3300 Fairchild Semiconductor HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLER Original PDF
    H11G3300W Fairchild Semiconductor 6-Pin DIP High Voltage Photodarlington Output Optocoupler Original PDF
    H11G3300W Fairchild Semiconductor HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLER Original PDF
    H11G33S Fairchild Semiconductor 6-Pin DIP High Voltage Photodarlington Output Optocoupler Original PDF
    H11G33S Fairchild Semiconductor HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLER Original PDF
    H11G33SD Fairchild Semiconductor 6-Pin DIP High Voltage Photodarlington Output Optocoupler Original PDF
    H11G33SD Fairchild Semiconductor Optoisolators - Transistor, Photovoltaic Output, Isolators, OPTOISO 5.3KV DARL W/BASE 6SMD Original PDF
    H11G3G Isocom Components HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR Original PDF
    H11G3M Fairchild Semiconductor High Voltage Photodarlington Optocouplers Original PDF

    H11G3 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    h11g1 case 730c-04

    Abstract: H11GX 1N4004 H11G1 H11G2 H11G3 motorola 1n4004
    Text: MOTOROLA Order this document by H11G1/D SEMICONDUCTOR TECHNICAL DATA H11G1 * [CTR = 1000% Min] GlobalOptoisolator H11G2* 6-Pin DIP Optoisolators Darlington Output On-Chip Resistors The H11G1, H11G2 and H11G3 devices consist of gallium arsenide IREDs optically coupled to silicon photodarlington detectors which have integral


    Original     		PDF H11G1/D H11G1 H11G2* H11G1, H11G2 H11G3 H11G3 H11Ging h11g1 case 730c-04 H11GX 1N4004 H11G1 motorola 1n4004

    H11G2M

    Abstract: No abstract text available
    Text: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon


    Original     		PDF H11G1M, H11G2M, H11G3M H11GXM H11G1M H11G2M E90700, H11G2M

    H11G1

    Abstract: H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M H11G1M H11G1SM fairchild logic
    Text: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon


    Original     		PDF H11G1M, H11G2M, H11G3M H11GXM H11G1M H11G2M E90700, H11G1 H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M H11G1M H11G1SM fairchild logic

    H11GX

    Abstract: H11G1 datasheet H11G2 H11G1 H11G3
    Text: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1 H11G2 H11G3 DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor


    Original     		PDF H11G1 H11G2 H11G3 H11GX E90700 00045A H11G1 datasheet H11G2 H11G1 H11G3

    H11G1

    Abstract: H11G1M H11G1SM H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M
    Text: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon


    Original     		PDF H11G1M, H11G2M, H11G3M H11GXM H11G1M H11G2M E90700, H11G1 H11G1M H11G1SM H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M

    H11G2

    Abstract: H11G1 E91231 H11G1X H11G3 Diode smd code sm
    Text: H11G1, H11G2, H11G3 H11G1X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS UL recognised, File No. E91231 Package Code " JJ " 'X' SPECIFICATIONAPPROVALS H11G1X VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 00802


    Original     		PDF H11G1, H11G2, H11G3 H11G1X E91231 H11G1X DB92008 H11G2 H11G1 E91231 H11G3 Diode smd code sm

    H11GX

    Abstract: H11G1 H11G2 H11G3
    Text: HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS H11G1 H11G2 H11G3 DESCRIPTION The H11GX series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor


    Original     		PDF H11G1 H11G2 H11G3 H11GX E90700 H11G1 H11G2 H11G3

    H11GX

    Abstract: H11G1M H11G1SM H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M
    Text: H11G1M, H11G2M, H11G3M High Voltage Photodarlington Optocouplers tm Features General Description • High BVCEO The H11GXM series are photodarlington-type optically coupled optocouplers. These devices have a gallium arsenide infrared emitting diode coupled with a silicon


    Original     		PDF H11G1M, H11G2M, H11G3M H11GXM H11G1M H11G2M E90700, H11GX H11G1M H11G1SM H11G1SR2M H11G1TM H11G1VM H11G2M H11G3M

    E91231

    Abstract: H11G1 H11G1X H11G2 H11G2X H11G3 H11G3X
    Text: H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form Dimensions in mm 2.54 7.0 6.0


    Original     		PDF H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 E91231 DB92008m-AAS/a1 E91231 H11G1 H11G1X H11G2 H11G2X H11G3 H11G3X

    Untitled

    Abstract: No abstract text available
    Text: H11G1, H11G2, H11G3 H11G1X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS z UL recognised, File No. E91231 Package Code " JJ " 'X' SPECIFICATIONAPPROVALS z H11G1X VDE 0884 in 3 available lead form:- STD - G form - SMD approved to CECC 00802


    Original     		PDF H11G1, H11G2, H11G3 H11G1X E91231 H11G1X DB92008m-AAS/A5

    E91231

    Abstract: H11G1 H11G1X H11G2 H11G2X H11G3 H11G3X
    Text: H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS VDE 0884 in 2 available lead forms : - STD - G form Dimensions in mm 2.54 7.0 6.0 l


    Original     		PDF H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 E91231 DB92008-AAS/A1 E91231 H11G1 H11G1X H11G2 H11G2X H11G3 H11G3X

    H11G1

    Abstract: H11G1X H11G2 H11G2X H11G3 H11G3X E91231
    Text: H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS l UL recognised, File No. E91231 'X' SPECIFICATION APPROVALS l VDE 0884 in 2 available lead forms : - STD - G form Dimensions in mm 2.54 7.0 6.0


    Original     		PDF H11G1X, H11G2X, H11G3X H11G1, H11G2, H11G3 E91231 DB92008m-AAS/a1 H11G1 H11G1X H11G2 H11G2X H11G3 H11G3X E91231

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    Untitled

    Abstract: No abstract text available
    Text: 3875081 G E SOLID STATE 01E optoelectronic S p e c ific a tio n s_ HARRIS SEMICOND SECTOR 19734 T W i-SS 37E D 43G2271 0 D 2 7 n t IH A S 7 Photon Coupled Isolator H11G3 Ga As Infrared Emitting Diode & NPN Silicon Darlington Connected P hototransistor


    OCR Scan     		PDF 43G2271 H11G3 S-42662 92CS-429S1

    Untitled

    Abstract: No abstract text available
    Text: O ptoisolator Specifications H11G3 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T he H U G series consists o f a gallium arsenide, infrared emitting diode coupled with a silicon Darlington-connected phototransistor which has an integral base-emitter resistor to


    OCR Scan     		PDF H11G3 300jusec,

    H11GX

    Abstract: GE H11G1 H11G2 H11G1 IEC204 VDE0113 VDE0160 VDE0832
    Text: MOTOROLA •i SEMICONDUCTOR TECHNICAL DATA H11G1 H11G2 H11G3 6-Pin DIP O ptoisolators Darlington Output . . . consists of gallium -arsenide IREDs optically coupled to silicon photodarlington detec­ tors which have integral base-emitter resistors. The on-chip resistors improve higher


    OCR Scan     		PDF H11G1 H11G2 H11G1, H11G2, H11G3 50-VOLT, H11Gx H11Gx GE H11G1 H11G2 H11G1 IEC204 VDE0113 VDE0160 VDE0832

    Untitled

    Abstract: No abstract text available
    Text: Û U A LIT Y TECHNOLOGIES CORP 57E » 74bbû51 00QL 204 fiT2 • ô T Y O ptoisolalor Specifications _ H11G3 /_ y , - Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H 11G series consists o f a gallium arsenide, infrared


    OCR Scan     		PDF H11G3

    Untitled

    Abstract: No abstract text available
    Text: Optoisolator Specifications H11G3 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Darlington Connected Phototransistor T h e H U G series consists o f a gallium arsenide, infrared em itting diode coupled with a silicon Darlington-connected phototransistor which has an integral base-emitter resistor to


    OCR Scan     		PDF H11G3

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA H11G1 H11G2 H11G3 6-Pin DIP Optoisolators Darlington Output . . . c o n s is ts o f g alliu m -arse n id e IR E D s o p tically co u p led to s ilic o n p ho to darlin g ton d etec­ to rs w h ich h ave integral b ase-em itter resisto rs. T h e on-chip re sisto rs im p ro ve h ig h er


    OCR Scan     		PDF H11G1 H11G2 H11G1, H11G2, H11G3

    H1163

    Abstract: C1709 C1706 MCA11G3 C2083 C2090 H11G1 H11G2 H11G3 MCA11G1
    Text: GENL I N S T R t OPTOELEK 88D aa GENERAL INSTRUMENT 0 2897 DE Ê BôTDlHû 00020^7 D HIGH VOLTAGE PHOTODARLINGTON OPTOCOUPLERS MCA11G1 H11G1 MCA11G2 (H11G2) MCA11G3 (H11G3) PACKAGE DIMENSIONS Æ . hB l iS l r" I 6.86 (.270) 6.35 (.250) 0.36 (.014) I f ¥


    OCR Scan     		PDF T012a MCA11G1 MCA11G2 H11G2) MCA11G3 H11G3) C2090 C2083 MCA11G1 MCA11G2 H1163 C1709 C1706 MCA11G3 C2083 C2090 H11G1 H11G2 H11G3

    Untitled

    Abstract: No abstract text available
    Text: 6 LEADED DEVICES continued Resistor Darlington Output Pinout: 1-Anode, 2-Cathode, 3-N.C., 4-Emitter, 5-Collector, 6-Base (Style 1) Current Transfer Ratio (CTR) Device H11G1S,F H11G2S,F H11G3S.F % Min e* If @ mA 1000 1000 200 10 10 1 VCE(sat) VOF Volts Volts


    OCR Scan     		PDF H11G1S H11G2S H11G3S MOC8204$ H11D1S H11D2S H11L1S H11L2S MOC5008S MQC5009S

    H11U

    Abstract: No abstract text available
    Text: 02897 D J ^ t t a S l 88D flfl T E C H N O L O G I E S CORP GENERAL INSTRUMENT 0DD2S-Ì7 h ig h v o itag e p h o to p a ru n g to n o p to c o u p le r s MCA11G1 H11G1 M C A 11G 2 (H11G2) M C A 11G 3 (H11G3) DESCRIPTION PACKAGE DIMENSIONS t 6.86 (.270) 8.89 (.350)


    OCR Scan     		PDF MCA11G1 H11G1) H11G2) H11G3) MCA11G1 MCA11G2 MCA11G2 H11G1, H11G2, H11U

    h11g1 case 730c-04

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR! TECHNICAL DATA TO Q VD € Ul CSA SETI <§> ® SEMKO DEMKO H11G1* H11G2* H11G3 NEM KO [CTR . 1000% M in] 6-Pin D IP O ptoisolators Darlington Output On-Chip R esistors [CTR = 1000% Min] [CTR * 200% Min] ‘ M otorola P referred


    OCR Scan     		PDF H11G1, H11G2 H11G3 H11G1 H11G2-- H11G1 H11G1* H11G2* H11G3 h11g1 case 730c-04

    b13s7

    Abstract: No abstract text available
    Text: ISOCOfl COMPONENTS LTD 45E » • HfiflbSlQ 0Q0D23S fi « I S O T -4 1 -7 3 lf = 20mA < •r V b v ceo 2V Ij.= 1mA m O O VF o Ui Characteristics CD TRANSISTO R FAM ILY VCE|SAT| lp =100uA v CE= io v Test L -0 VCE SAT> lF = 20mA Ip= 20mA Ip= 20mA lc =40pA lc =125 iA 1c =175nA VCE=10V


    OCR Scan     		PDF 0Q0D23S 175nA 100uA 813S3 B13S5 B13S7 ISTS823A ISTS824A ISTS832S ISTS832SD b13s7