in5231
Abstract: driver piezo print heads inkjet print head interface ic a 2231 piezo print head inkjet print head driver HV507 IN4002 voltage direction piezo head of inkjet IN5245
Text: AN-H20 Application Note HVCMOS Drivers for Non-Impact Printing This article discusses the use of monolithic high voltage ICs for non-impact printing and plotting applications. Supertex’s HVCMOS process technology allows combining low voltage logic as well as high voltage DMOS outputs up to 400V on
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AN-H20
in5231
driver piezo print heads
inkjet print head interface
ic a 2231
piezo print head
inkjet print head driver
HV507
IN4002 voltage direction
piezo head of inkjet
IN5245
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IR BOOST CHARGER BM 125
Abstract: FCM2012V-121RC10-0805 W83L517 SiS301 R5460 d38aa u3843 STAC97 G731 MF3 IC D41
Text: B A 3 1 1 H26 HOLEC217D67BC67 H25 HOLEC217D67BC67 H9 HOLEC217D67BC67 H11 HOLEC217D67BC67 H10 HOLEC256D106 1 9 8 7 6 H17 HOLES256X325D106 2 9 3 8 4 7 5 6 H22 HOLES256X325D106 2 9 3 8 4 7 5 6 1 H12 HOLEC335D185 C H2 HOLEC256D106 2 3 4 5 1 H20 HOLES256X325D106
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SIS650-1
SIS650-2
SIS650-3
SIS650-4
SIS962-1
SIS962-2
SIS962-3
SIS962-4
PC87591
SIS301
IR BOOST CHARGER BM 125
FCM2012V-121RC10-0805
W83L517
R5460
d38aa
u3843
STAC97
G731
MF3 IC D41
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KK0G733011020
Abstract: DC-533 MOSFET B20 p03 G733 W83L950 l7912 GP57 diode DB3 C531 xa1720 UV111
Text: B 1 D 1 1 9 8 7 6 1 EMI H12 HOLEC256D106P2-V8 2 9 3 8 4 7 5 6 1 H13 HOLEC256D106P2-V8 2 9 3 8 4 7 5 6 1 9 8 7 6 H15 HOLEC256D106P2-V8 2 3 4 5 H23 SMD157X98 1 H20 HOLEC256D106P2 1 H8 HOLEC334D184P2 1 H14 HOLEC256D106P2-V8 2 3 4 5 1 1 1 H7 HOLEC334D184P2 1 H5
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SIS650-1
SIS650-2
SIS650-3
SIS650-4
SIS962-1
SIS962-2
SIS962-3
SIS962-4
PC87591
SIS301
KK0G733011020
DC-533
MOSFET B20 p03
G733
W83L950
l7912
GP57
diode DB3 C531
xa1720
UV111
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Text: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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XP06501T
XP06531
XP06545
XP0A554
XP0D873
XP0D874
XP0D875
2SC5936
2SC6073
PANASONIC TRANSISTOR 2SC6073
2sc5929
MN1280
transistor 2SC6073
2SC5936 equivalent
2SC6074
TRANSISTOR 2SC5929
2sc5928
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Text: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibiliXP08081
XP08546
XP0A554
XP0D873
XP0D874
XP0D875
XP0E554
2sc5929
MN1280
TRANSISTOR 2SC5929
3SK129
3SK97
2sc5928
2PG009
2SC5929 equivalent
2sk4000
2sd965 TRANSISTOR REPLACEMENT GUIDE
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MSPD2018
Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Text: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800
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foc17091
MSPD2018
MZBD-9161
ZENER 15B1
msd700 package inductance
MSPD2018-H50
B20 zener diode glass
MPN7320
MZBD9161
MLP7121
15B1 zener diode
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h06 diode
Abstract: DN-H06 HV9931 dimmer chokes power control circuit 220vdc ES1J DIODE ES1J SCHEMATIC dimmer mov-10 d2 diode series
Text: DN-H06 14W Off-line LED Driver, 120VAC, PFC, 14V, 1.0A Load Specifications Parameter Value AC line voltage 100 - 135VAC LED string voltage 0 - 14V LED current 1.0A Switching frequency 70 - 120kHz Design Note The input line current features low harmonic distortion, satisfying the requirements of EN 61000-3-2 Class C (Lighting
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DN-H06
120VAC,
135VAC
120kHz
135VAC.
100VAC.
AN-H52
h06 diode
DN-H06
HV9931
dimmer chokes
power control circuit 220vdc
ES1J DIODE
ES1J
SCHEMATIC dimmer
mov-10
d2 diode series
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2n7226
Abstract: transistor substitution chart 2N7224 2N7224U 2N7225 2N7225U 2N7227 2N7227U 2N7228 2N7228U
Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 21 September 1996 IINCH-POUND MIL-PRF-19500/592C 21 June 1996 SUPERSEDING MIL-S-19500/592B 31 January 1991 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, REPETITIVE AVALANCHE, FIELD EFFECT TRANSISTOR, N-CHANNEL,
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MIL-PRF-19500/592C
MIL-S-19500/592B
2N7224,
2N7225,
2N7227,
2N7228,
2N7224U,
2N7225U,
2N7227U,
2N7228U
2n7226
transistor substitution chart
2N7224
2N7224U
2N7225
2N7225U
2N7227
2N7227U
2N7228
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IRFG1Z0
Abstract: irfh25 irfg9110 IRFH150
Text: Government/ Space Products international ^ R e c tifie r Power MOSFETS High Reliability TO-258 - K N-Channel Part Number Iq Continuous Drain Current 25° Case Amps P q Max Power Dissipation (Watts) Case Outline Number (5) Notes 80 70 250 H20 (4) 30 30 15
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O-258
IRFV360
IRFV460
O-258
IRFH150
IRFH250
IRFH350
IRFH450
O-210AC
IRFG110
IRFG1Z0
irfh25
irfg9110
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6786U
Abstract: 6802U 6800U 6792U
Text: Government and Space Products International Rectifier IQ R *D Part Number i = 2 5 ° c ^DS(on Bvdss (A) (V) r ^ ir c (A) h @ T r = 25°C W Fox on Demand Number Case Outline Key Hermetic Packages HEXFET Power MOSFETs LCC JA N TX 2N 6796U 100 JA N TX2N 6798U
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6796U
6798U
6800U
6802U
6782U
6784U
6786U
6788U
6790U
6792U
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h20 smd
Abstract: No abstract text available
Text: International I« R Rectifier •o Part Number ¿2 Government and Space Products Tf=25°C W RDS on bVDSS (V) Tf=100°C (A) Pd @ T r= 2 5 °C (W) a Fax on Demand Number Case Outline Key Hermetic Packages HEXFET Power MOSFETs LCC N-Channel IR F E 0 2 4 60
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IRFE130
JRFE330
1RFE420
JANTX2N6794L'
O-254AA
O-257AA
0036AB
O-258AA
O-259AA
h20 smd
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Untitled
Abstract: No abstract text available
Text: Internationa I Iô R Rectifier Government and Space Products Id Part Number VDSS RoSfon ffi T C=25°C M W ^ pd T ^ IO O ’C Total “ ose Rating W RBds Si) @ Tr = 25°C W Number HEXFET ® Power MOSFETs f ose Demand Outline Key Radiation Hardened LCC N-Channel
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Untitled
Abstract: No abstract text available
Text: Government and Space Products International IQ R Rectifier •d Pa rt Num ber b vdss R DS on (V) (£ 1 T f= 2 S °C (A) Pd @ Tr= 2 5 °C T f= 10 0 °C (A ) (W ) Fax on Dem and Num ber Case O u t lin e Key Herm etic Packages HEXFET Power MOSFETs LCC IRf-'E9220
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E9220
1RFE9230
JANTX2N6845U
JANTX2N6847U
JANTXV2N6845U
JANTXV2N6847U
JANTXV2N6849U
O-254AA
O-257AA
M0-036AB
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8279-5
Abstract: 27101 IRFK3DC50 IRFK3F450 82790
Text: International IQR Rectifier N T Ç i i N À » I C :tu t,fc HEXFET Power MOSFETs / .S N - S p c Kj « * ’ 1 '12 •o V BR DSS >D Re Drain-to-Source ^DS(on) Pulse Continuous Po Breakdown On-State Drain Current Drain Current Max. Thermal Max. Power Part
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3F450
IRFK2D054
IRFK2F054
IRFK2DC50
IRFK2FC50
IRFK3DC50
IRFK2DE50
IRFK2FE50
8279-5
27101
IRFK3F450
82790
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JANSR2N7261
Abstract: No abstract text available
Text: International lÜRectifier Government and Space HEXFET Power MOSFETs Radiation Hardened N & P Channel R tltJC Max. Pd@ Case rc = ioo°c TC = 25°C Outline A (K/W) (W) Number (1) (2) Pari b v dss Number (V) RDS(on) (Ohms) IRHE7110 100 0.60 3.1 2.0 11 11 IRHE8110
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IRHE7110
IRHE8110
IRHE7130
IRHE8130
IRHE7230
IRHE8230
IRHE9130
IRHN7054
IRHN8054
IRHN7130
JANSR2N7261
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RFD8P05SM
Abstract: No abstract text available
Text: HARRIS SEHICOND SECTOR bfiE D • 4302E71 00510^5 070 ■ PCF8P05W P^^FSPOSD HARRIS S E M I C O N D U C T O R P-Channel MOS Chip January 1993 Features • HAS Die Passivated • Contact Metallization - Gate and Source - Aluminum Silicon • Drain • Tri-Metal AI-Ti-NI
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4302E71
PCF8P05W
MII-Std-750,
RFD8P05
RFD8P05SM
RFP8P05
PCF8P05D
1-800-4-HARRIS
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transistor N43
Abstract: harris 34
Text: HARRIS SENICOND SECTOR g ì H W bôE D • 4302271 OGSlllfl ÌO? ■ HAS PCF420W a r r is F4SP SE MI C ON D UC T O R January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization • Gate and Source - Aluminum - Drain - Tri-Metal AI-TI-Ni
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PCF420W
Mil-Std-750,
IRF820
IRFF420
IRFU420
PCF420W
PCF420D
1-800-4-HARRIS
transistor N43
harris 34
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rfd3055rle
Abstract: RFD3055RLESM
Text: H A RR IS SEIIICOND SECT OR bflE D • 430 2 27 1 DDSlDHfl S'il ■ HAS PCF12N06RLEW PCF12N06RLED H A R R IS S E M I C O N D U C T O R January1993 N-Channel MOS Chip Die Features • Passivated • Contact Metallization - Gate and Source - Aluminum Silicon
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PCF12N06RLEW
PCF12N06RLED
MII-Std-750,
RFD12N06RLE
RFD12N06RLESM
RFD3055RLE
RFD3055RLESM
RFP12N06RLE
RFP3055RLE
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h20 mosfet
Abstract: PCF25N05D fusee
Text: HARRIS SEHICOND SECTOR S bflE D • 4302271 0051150 StS ■ HAS PCF25N05W PCF25N05D h a r r is S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum Silicon - Drain - Tri-Metal Al-Ti-Ni
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PCF25N05W
PCF25N05D
Mil-Std-750,
RFD16N05
RFP25N05
RFP25N06
BUZ11
PCF25N05D
1-800-4-HARRIS
h20 mosfet
fusee
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HARRIS IRFD110
Abstract: IRF510
Text: H AR RIS SEIUCOND SECTOR bflE D • 430EB71 O D S lD ib ■ HAS PCF110W HARRIS a 41b SEMICONDUCTOR P January1993 ^ j F 1 1 O D N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum - Drain - Tri-Metal AI-Ti-NI
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430EB71
PCF110W
ry1993
Mll-Std-750,
IRF510
IRFD110
IRFU110
IRFF110
2N6782
PCF110W
HARRIS IRFD110
IRF510
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PCF14N
Abstract: RFD10N05SM RFD10N05
Text: HARRI S SEUI COND SECTOR LflE D • M30BB71 OOSl l Ofl ■ HAS PCF14N05W P^^F14NI05[^ h a r r is S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Features • Tbfl Die Passivated • Contact Metallization - Gate and Source - Aluminum Silicon - Drain - Tri-Metal Al-Ti-Ni
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M30BB71
PCF14N05W
F14NI05[
Mil-Std-750,
RFD10N05
RFD10N05SM
RFP14N05
PCF14N05D
1-800-4-HARRIS
PCF14N
RFD10N05
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IRF630 HARRIS
Abstract: Transistor irf230 BUZ30 5A/IRF630 HARRIS
Text: HARRIS SEMICOND SECTOR tflE D • M30E271 QOS1 1 1 4 S E M I C O N D U C T O R January 1993 N “C h 3 n n l M O S C h ip Die Features • HAS PCF230W HARRIS a ■ Passivated • Contact Metallization - Gate and Source - Aluminum • Drain - Tri-Metal Al-Ti-Ni
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M30E271
PCF230W
Mil-Std-750,
IRF630
BUZ30
IRF230
2N6758
IRFF230
2N6798
PCF230W
IRF630 HARRIS
Transistor irf230
5A/IRF630 HARRIS
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Untitled
Abstract: No abstract text available
Text: H A RR IS S E M I C O N D SECT OR bflE 5 • Œ\ h a r r i s \M J 430 2 27 1 □ 0 5 1 DÛ 4 .7T4 ■ HAS PCF15N06LW PCF15N06LD S E M I C O N D U C T O R January1993 N-Channel MOS Chip Features Die • Passivated • Contact Metallization - Gate and Source - Aluminum
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PCF15N06LW
PCF15N06LD
ry1993
MII-Std-750,
RFM15N06L
RFP15N06L
PCF15N06LD
1-800-4-HARRIS
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rfp12n10
Abstract: No abstract text available
Text: HARRIS SEHICOND SECTOR böE D • 4302271 00S11G0 777 ■ HAFRFR1S UU PCF12N10W P^jF12N1 OEJ S E M I C O N D U C T O R N-Channel MOS Chip January 1993 Die Features • HAS Passivated W • Contact Metallization - Gate and Source - Aluminum • Drain - Tri-Metal Al-Ti-Ni
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00S11G0
PCF12N10W
jF12N1
Mil-Std-750,
IRF120
IRF520
IRFR120
IRFF120
RFM12N10
RFP12N10
rfp12n10
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