M3322

Abstract: L-33-21 M3331 M3306 M3332 M3321 L3306 L3341 H3223 M3341
Contextual Info: FULL SIZE D.I.L. M3306 L3306 M3321, M3322 L3321, L3322 M3331, M3332 L3331, L3332 M3341, M3342 L3341, L3342 VOLTAGE CONTROLLED OSCILLATORS HCMOS, 0° TO 70°C HALF SIZE D.I.L. H3306 H3321, H3322 H3331, H3332 H3341, H3342 Tristate VCXOs Thru-Hole, 3.3V Tristate, 3.3V

M3306

Abstract: M3331 M3321 M3332 digital storage oscilloscope M3341
Contextual Info: VOLTAGE CONTROLLED CRYSTAL OSCILLATORS HCMOS/TTL 3.3V FULL SIZE D.I.L. M package HALF SIZE D.I.L. H package M3306 M3321, M3322 M3331, M3332 M3341, M3342 H3306 H3321, H3322 H3331, H3332 H3341, H3342 Thru-Hole / Gull Wing Commercial: 0º to 70ºC TRISTATE, 3 MHz to 125 MHz

h273d

Abstract: ECHU1
Contextual Info: Panasonic Plastic Film Capacitors Film C hip C a p a citor Type: ECHU High grade Stacked m etallized PPS film as d ie le c tric w ith sim ple m old-less co nstruction • Features •S m a ll in size (m inim um size 2 .0 x1 .25mm) •8 5 °C , 85% RH, W.V. x 1.0 for 500 hours

Contextual Info: THE INFORMATION CONTAINED HEREIN IS CONSIDERED 'PROPRIETARY' TO BEL FUSE INC. AND SHALL NOT BE COPIED, REPRODUCED DR DISCLOSED WITHOUT THE WRITTEN APPROVAL OF BEL FUSE INC. L E D I P O L A R IT Y P IN 27 + PIN 28 LED 2 COLOR — PIN GREEN 29 + RoHS 2002/95/EC.

PG-DSO-20

Abstract: a1807 PTFA211801E H-32259-2 lt 860 PTFA071701GL ptfa072401fl 1800 ldmos 1805-1880 PTMA210452M
Contextual Info: Never stop thinking RF Power Product Selection Guide LDMOS Transistors and ICs [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S state-of-the-art LDMOS technology, high-volume manufacturing facilities and fully-automated production assembly and test

Contextual Info: Order this data sheet by MCA2200ECL/D M O TO RO LA MCA2200ECL 1 SEMICONDUCTOR TECHNICAL DATA MCA2200ECL MACROCELL ARRAY The MCA2200ECL Array is a m em ber of M otorola's "T h ird G eneration” MCA3 ECL series. M otorola's MOSAIC III process provides the MCA2200ECL w ith the logic pow er of over 2200

Contextual Info: Data Sheet No. PD-9.819A INTERNATIONAL RECTIFIER IO R AVALANCHE ENERGY AND dv/dt RATED HEXFET TRANSISTORS IRHN7450 IRHN8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.45Í2, MEGA RAD HARD HEXFET International Rectifier’s MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability

mega 329

Abstract: IRHN7450 IRHN8450
Contextual Info: Data Sheet No. PD-9.819A INTERNATIONAL RECTIFIER I3R AVALANCHE ENERGY AND dv/dt RATED HEXFEF TRANSISTORS IRHN7450 IRHN8450 N-CHANNEL MEGA RAD HARD 500 Volt, 0.450, MEGA RAD HARD HEXFET International Rectifier's MEGA RAD HARD Technology HEXFETs demonstrate excellent threshold voltage stability

transistor di 960

Contextual Info: PTFA092211EL PTFA092211FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 220 W, 920 – 960 MHz Description The PTFA092211EL and PTFA092211FL are 220-watt, internallymatched LDMOS FETs intended for EDGE and WCDMA applications

PTFB090901EA

Contextual Info: RF Power Product Selection Guide LDMOS Transistors and ICs www.infineon.com/rfpower RF Power Product Selection Guide New Products PTVA093002TC n 703–960MHz n Dual Path Design n Typical RF Characteristics Doherty, 758MHz – POUT = 63W avg – Gain = 17.5dB

tl249

Abstract: tl2472 TL244 TRANSISTOR tl131 TL251 tl239 PTFB182503 PTFB182503FL tl250 TL242
Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier

Contextual Info: PTFA091503EL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 150 W, 920 – 960 MHz Description The PTFA091503EL is a 150-watt, internally-matched FET intended for use in power ampliier applications in the 920 to 960 MHz band.

H331 transistor

Abstract: transistor h331 ZX-03 10000 series of ECL gates H375 L892 MCA2500ECL Nippon capacitors l421 L817
Contextual Info: Order this data sheet by MCA10000ECL/D M O TO RO LA SEM ICO NDUCTO R TECHNICAL DATA M C A 10000E C L M ACROCELL ARRAY MCA3 ECL SERIES The MCA10000ECL A rra y is a m e m b e r o f M o to ro la 's "T h ird G e n e ra tio n " MCA3 ECL series. M o to ro la 's MOSAIC III process

2170S

Contextual Info: PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz Description PTMA210452EL Package H-33265-8 The PTMA210452EL and PTMA210452FL are matched, wideband, 45-watt, 2-stage, LDMOS integrated amplifiers intended for use in

PTFA072401FLV5XWSA1

Abstract: VARIABLE RESISTOR 2K LM7805 LTN 156
Contextual Info: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 30 V, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the

Contextual Info: HMC332 / 332E v01.0705 MIXERS - SGL-BAL - SMT 9 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.0 - 2.8 GHz Typical Applications Features The HMC332 / HMC332E is ideal for: Integrated LO Amplifier w/ Pdiss: < 20 mW • MMDS Conversion Loss / Noise Figure: 8 dB

Contextual Info: HMC332 / 332E v01.0705 MIXERS - SMT 7 GaAs MMIC MIXER w/ INTEGRATED LO AMPLIFIER, 2.0 - 2.8 GHz Typical Applications Features The HMC332 / HMC332E is ideal for: Integrated LO Amplifier w/ Pdiss: < 20 mW • MMDS Conversion Loss / Noise Figure: 8.0 dB • PCMCIA

PTFA142401EL

Abstract: 33288 PTFA142401FL DVB-T acpr H-33288-2
Contextual Info: Preliminary PTFA142401EL PTFA142401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FET 240 W, 1450 – 1500 MHz Description The PTFA142401EL and PTFA142401FL are 240-watt LDMOS FETs designed for DVB and DAB applications in the 1450 to 1500 MHz

TRANSISTOR tl131

Abstract: ptfb192503 tl134 TL105B PTFB182503FL TL231 PTFB192503EL V1 c103 TRANSISTOR RO4350 TL117
Contextual Info: PTFB182503EL PTFB182503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 1805 – 1880 MHz Description The PTFB182503EL and PTFB182503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power amplifier applications

TRANSISTOR tl131

Abstract: tl134 PTFB212503FL tl127 TL234 TL107 tl117 atc100b6r2 tl227 c103 TRANSISTOR DATA
Contextual Info: PTFB212503EL PTFB212503FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 2110 – 2170 MHz Description The PTFB212503EL and PTFB212503FL are 240-watt LDMOS FETs intended for use in multi-standard cellular power

GRM422Y5V106Z050AL

Abstract: PTMA210452EL PTMA210452FL RO4350
Contextual Info: PTMA210452EL PTMA210452FL Confidential, Limited Internal Distribution Wideband RF LDMOS Integrated Power Amplifier 45 W, 1900 – 2200 MHz Description PTMA210452EL Package H-33265-8 The PTMA210452EL and PTMA210452FL are wideband, 45-watt, 2-stage, LDMOS integrated amplifiers intended for use in all typical

diode c723

Abstract: PTFA072401FL VARIABLE RESISTOR 2K LM7805 PTFA072401EL RO4350 BCP56 LM7805 voltage regulator packages DD 127 D TRANSISTOR
Contextual Info: PTFA072401EL PTFA072401FL Confidential, Limited Internal Distribution Thermally-Enhanced High Power RF LDMOS FETs 240 W, 725 – 770 MHz Description The PTFA072401EL and PTFA072401FL are 240-watt LDMOS FETs designed for use in cellular power amplifier applications in the 725 to

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455

PTFA142401EL

Abstract: PTFA041501E PTFA041501F PTFA070601E PTFA070601F PTFA071701E PTFA071701F PTFA072401EL PTFA072401FL PTFA080551E
Contextual Info: RF Power Product Selection Guide LDMOS T r a n s i s t o r s a n d I C s [ www.infineon.com/rfpower ] Product Selection Guide I N F I N E O N ’ S s t a t e - o f - t h e - a r t L D M O S t e c h n o l o g y , high-volume manufacturing facilities and fully-automated production assembly