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    H5N2005DS Search Results

    H5N2005DS Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    H5N2005DSTL-E Renesas Electronics Corporation Nch Single Power Mosfet 200V 6A 650Mohm DPAK(S)/To-252 Visit Renesas Electronics Corporation
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    H5N2005DS Price and Stock

    Renesas Electronics Corporation H5N2005DSTL-E

    Trans MOSFET N-CH 200V 6A 3-Pin DPAK T/R (Alt: H5N2005DSTL-E)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Silica H5N2005DSTL-E 28 Weeks 18,000
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    H5N2005DS Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    H5N2005DS Renesas Technology Silicon N Channel MOS FET High Speed Power Switching Original PDF
    H5N2005DS Renesas Technology Silicon N Channel MOS FET Original PDF

    H5N2005DS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H5N2005DL

    Abstract: H5N2005DL-E H5N2005DS H5N2005DSTL-E PRSS0004ZD-B PRSS0004ZD-C
    Text: H5N2005DL, H5N2005DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1104-0300 Rev.3.00 Mar 05, 2009 Features • Low on-resistance • Low drive power • High speed switching Outline RENESAS Package code: PRSS0004ZD-B Package name: DPAK(L -(2) )


    Original     		PDF H5N2005DL, H5N2005DS REJ03G1104-0300 PRSS0004ZD-B PRSS0004ZD-C H5N2005DL H5N2005DL-E H5N2005DS H5N2005DSTL-E PRSS0004ZD-B PRSS0004ZD-C

    H5N2005DSTL-E

    Abstract: H5N2005DL H5N2005DL-E H5N2005DS PRSS0004ZD-B PRSS0004ZD-C
    Text: H5N2005DL, H5N2005DS Silicon N Channel MOS FET High Speed Power Switching REJ03G1104-0200 Previous: ADE-208-1373 Rev.2.00 Sep 07, 2005 Features • Low on-resistance • Low drive current • High speed switching Outline RENESAS Package code: PRSS0004ZD-B


    Original     		PDF H5N2005DL, H5N2005DS REJ03G1104-0200 ADE-208-1373) PRSS0004ZD-B PRSS0004ZD-C H5N2005DSTL-E H5N2005DL H5N2005DL-E H5N2005DS PRSS0004ZD-B PRSS0004ZD-C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet H5N2005DL, H5N2005DS R07DS0796EJ0400 Previous: REJ03G1104-0300 Rev.4.00 Jun 07, 2012 200V - 6A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.52  typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)  Low drive power


    Original     		PDF H5N2005DL, H5N2005DS R07DS0796EJ0400 REJ03G1104-0300) PRSS0004ZD-B PRSS0004ZD-C

    Untitled

    Abstract: No abstract text available
    Text: Preliminary Datasheet H5N2005DL, H5N2005DS R07DS0796EJ0400 Previous: REJ03G1104-0300 Rev.4.00 Jun 07, 2012 200V - 6A - MOS FET High Speed Power Switching Features • Low on-resistance RDS(on) = 0.52  typ. (at ID = 3 A, VGS = 10 V, Ta = 25C)  Low drive power


    Original     		PDF H5N2005DL, H5N2005DS R07DS0796EJ0400 REJ03G1104-0300) PRSS0004ZD-B PRSS0004ZD-C

    Hitachi DSA0076

    Abstract: H5N2005DL H5N2005DS Silicon N Channel MOS FET High Speed Power Switching dpak code
    Text: H5N2005DL, H5N2005DS Silicon N Channel MOS FET High Speed Power Switching ADE-208-1373 Z Target Specification 1st. Edition Mar. 2001 Features • Low on-resistance • Low drive current • High speed switching Outline DPAK-2 4 4 1 2 D 3 H5N2005DS G 1 2


    Original     		PDF H5N2005DL, H5N2005DS ADE-208-1373 H5N2005DL Hitachi DSA0076 H5N2005DL H5N2005DS Silicon N Channel MOS FET High Speed Power Switching dpak code

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    H5N2005DSTL-E

    Abstract: H5N2005DL H5N2005DL-E H5N2005DS PRSS0004ZD-B PRSS0004ZD-C NEC sc-63 date code
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    rjp3053

    Abstract: RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009
    Text: 2007.10 Renesas Transistors/Thyristors/Triacs Status List Topic_New-Generation Power MOS FET: Low Loss MOS FET " JET " 10th Gen. - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 2 Index - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - 3 to 5


    Original     		PDF REJ16G0001-1900 rjp3053 RJP3063 rjp6065 RJP2557 RJP3057 RJH30 RQJ0301 RJP3065 rjk5020 RJK2009

    H5N2005DL

    Abstract: H5N2005DS
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF