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    Kyocera AVX Components RHA1011561M016K

    Aluminum Electrolytic Capacitors - Radial Leaded ALUMINUM RADIAL HYBR ID
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    HA 11561 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Type PDF
    HA11561 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    HA11561 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

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    xn 1049 dp

    Abstract: atmel u122 o2c ADQ44 a6252 ic a6252 atmel 938 32c ADQ36 22B35 ad 11800 t8 ATMEL 812 24C
    Text: This Document can not be used without Samsung's authorization. 7. Circuit Diagram 4 SE DONA Signature : 3 3 APPROVAL 2005/10/05 SEDONA MAIN BA41-#####A PR 0.81 CPU :Intel Y onah667 Chip Set :Intel Calistoga & ICH7-M Remarks : Mobility Platform : : : : : :


    Original     		PDF onah667 BA41-# heet18. heet19. heet20 heet24. heet25. M56-P xn 1049 dp atmel u122 o2c ADQ44 a6252 ic a6252 atmel 938 32c ADQ36 22B35 ad 11800 t8 ATMEL 812 24C

    Am2BF512

    Abstract: No abstract text available
    Text: HNA: AMD£I A m 28F512 512 Kilobit 64 K X 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ Flasherase Electrical Bulk Chip-Erase — One second typical chip-erase


    OCR Scan     		PDF 28F512 AM28F512 Am28F512 Am2BF512

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY Am27LV020 Advanced Micro Devices 262,144 x 8-Bit CMOS Low Voltage, One Time Programmable Memory DISTINCTIVE CHARACTERISTICS • 3.3 V ± 0.3 V Vcc read operation Program voltage 12.75 ± .25 V ■ High performance at 3.3 Vcc - 200 ns maximum access time


    OCR Scan     		PDF Am27LV020 6262A

    Untitled

    Abstract: No abstract text available
    Text: •ìAPt t' i ' PRELIMINARY Am27LV512 Advanced Micro Devices 65,536 x 8-Bit CMOS Low Voltage, One Time Programmable Memory DISTINCTIVE CHARACTERISTICS • ■ 3.3 V ± 0.3 V Vcc read operation Program voltage 12.75 ± 0.25 V High performance at 3.3 V Vcc Latch-up protected to 100 mA


    OCR Scan     		PDF Am27LV512 9408a,

    Untitled

    Abstract: No abstract text available
    Text: a Preliminary Advanced Micro Devices Am28F010 131,072 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time ■ Low power consumption - 30 mA maximum active current - 1 0 0 nA maximum standby current ■


    OCR Scan     		PDF Am28F010 32-Pin 8007-003A Am28F010-95C4JC Am28F010-95C3JC

    Untitled

    Abstract: No abstract text available
    Text: n Preliminary Am28F512 Advanced Micro Devices 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time ■ Low power consumption ■ Flasherase Electrical Bulk Chlp-Erase - One second typical chip-erase


    OCR Scan     		PDF Am28F512 32-pin Am28F512-95C4JC Am28F512-95C3JC

    AMD am3 socket pinout

    Abstract: amd am3 pin out AM28F512
    Text: ADV MI CR O MEM OR Y 4fiE D 02S7SEÖ Preliminary DG30bäS 5 « A M D 4 T—46—13—27 Advanced Micro Devices A m 2 8 F 5 1 2 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time • Low power consumption


    OCR Scan     		PDF 02S7SEÃ Am28F512 32-pin T-46-13-27 compatibleD25752Ã 0Q3G714 T-46-13-2 Am28F512-95C4JC Am28F512-95C3JC AMD am3 socket pinout amd am3 pin out

    AAYP37

    Abstract: dioda
    Text: DIODA IMPULSOWA AAYP37 7-74/1 SWW 1156-131 Dioda germanowa z ostrzem ziotym jest przeznaczona do stosowania w ukladach przel^czaj^cych áredniej szybkosci. Param etry dynamiczne; Czas przel^czania w przód przy I f = 100 mA; Up = 1,2 V Czas przelqczania przy ÍF = 5 MA;


    OCR Scan     		PDF AAYP37 AAYP37 dioda

    BYP401-50

    Abstract: BYP401-100 BYP401-400 BYP401-1000 BYP401-600 BYP401-200 BYB401-50 BYP401-800 BYP401 dioda n 04
    Text: — DIODA PROSTOWNICZA BYP401 -i m 4o o ? 22- 74/2 SWW 1156-112 D iada krzem ow a dyfuzyjna je st przeznaczona do stosow ania w ukíadach prostow niczych m alej i áredniej moey. K ierunek napisu oznaczenia n a obudow ie diody w skazuje k ierunek przew odzenia.


    OCR Scan     		PDF BYP40X BYB401-50 BYP401-1000 BYP401-800 BYP401-600 BYP401-400 BYP401-200 BYP401-100 BYP401-50 BYB401-50 BYP401 dioda n 04

    28FS12

    Abstract: No abstract text available
    Text: a Am28F512 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • High performance — 70 ns maximum access time ■ CMOS Low power consumption — 30 mA maximum active current — 100 pA maximum standby current


    OCR Scan     		PDF Am28F512 32-Pin Am28F512-75 28FS12

    Untitled

    Abstract: No abstract text available
    Text: P R E L IM IN A R Y Am 2 7L V 010 Advanced Micro Devices 131,072 x 8-Bit CMOS Low Voltage, One Time Programmable Memory DISTINCTIVE CHARACTERISTICS • 3.3 V ± 0.3 V Vcc read operation Program voltage 12.75 ± .25 V ■ High perform ance at 3.3 Vcc - 200 ns m aximum access time


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: a Am28F512 Advanced Micro Devices 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ ■ — No data retention power consumption


    OCR Scan     		PDF Am28F512 32-Pin

    BYP660-100R

    Abstract: BYP660-700R BYP660-300R BYP660 BYP660-50R BYP660-500 BYP660 dioda BYP660-300 BYP660-500R BYP660-700
    Text: DIODA PROSTOWNICZA BYP660 R 23'74/2 SWW 1156-112 D ioda krzem ow a dyfu zyjn a je st przeznaczona g!6w n ie do stosow ania w ukladach prostow niczych m alej i Sredniej m ocy. A noda diody jest pol^czona galw aniczn ie z obudow g, co zakodow ane jest lite r s ,R” na koncu oznaczenia typu diody np.: BYP660— 7O0R.


    OCR Scan     		PDF BYP660 BYP660â BYP660-700R BYP660-500R BYP660-300R BYP660-100R BYP660-50R BYP660 BYP660-500 BYP660 dioda BYP660-300 BYP660-700

    11561-011A

    Abstract: No abstract text available
    Text: Preliminary a Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • High performance ■ Flasherase Electrical Bulk Chip-Erase - One second typical chip-erase - 90 ns maximum access time ■ Low power consumption


    OCR Scan     		PDF Am28F256 32-pin Am28F256-95C4JC Am28F256-95C3JC 11561-011A

    Untitled

    Abstract: No abstract text available
    Text: a Am28F020 262,144 x 8-Bit CMOS Flash Memory Advanced Micro Devices DISTINCTIVE CHARACTERISTICS • ■ ■ ■ ■ High performance - 90 ns maximum access time CMOS Low power consumption - 30 mA maximum active current -1 0 0 iA maximum standby current - No data retention power


    OCR Scan     		PDF Am28F020 32-Pin -32-pin

    Untitled

    Abstract: No abstract text available
    Text: Customer Information Sheet D RAWING N o . : M80-926XXXX SHEET 2 OF 2 I IF SPEC I F I C A T O N S : MATERIAL: P O L Y A M I D E 46 U L 9 4 V - 0 , B L A C K MOULDING PHOSPHOR BRONZE CONTACTS FINISH: CONTACTS: 22 - 0 . 7 5 ju G O L D ON C O N T A C T A R E A


    OCR Scan     		PDF M80-926XXXX 926XXXX

    AMD a 462 socket pinout

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY 38E Q 02s7saa 7 hamdm ggetöoq ¿Ü^PreOmlnarypllfc" r= 4 (,- ß - 2 l Am28F512 Advanced Micro Devices 65,536 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time Low power consum ption


    OCR Scan     		PDF 02s7saa Am28F512 32-pin T-90-10 AMD a 462 socket pinout

    Untitled

    Abstract: No abstract text available
    Text: a PRELIMINARY A m 2 7 L V 1 Advanced Micro Devices 131,072 x 8-Bit CMOS Low Voltage, One Time Programmable Memory D IS T IN C T IV E C H A R A C T E R IS T IC S • 3.3 V ± 0.3 V Vcc read operation Program voltage 12.75 ± 0.25 V ■ High performance at 3.3 Vcc


    OCR Scan     		PDF Am27LV010 6262A

    AM28F256

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY 4ÖE T> □2S7SEÖ GD30bSS 7 IAMD4 Preliminary Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS High performance - 90 ns maximum access time Low power consumption - 30 mA maximum active current


    OCR Scan     		PDF GD30bSS Am28F256 32-pin -32-pin Am28F256-95C4JC Am28F256-95C3JC

    apm 4550

    Abstract: ALL TYPE tv IC DATA AND manual substitution BOOK transistor book Hex schmitt trigger ecl i386SX PROGRAMMER REFERENCE CPU BOARD OF AOC 20S 53c94 NCR 17058a ALL TYPE IC DATA AND manual substitution BOOK intel 386sx overdrive
    Text: 3-Volt System Logic for Personal Computers Data Book I Advanced Micro Devices 3-Volt System Logic for Personal Computers Data Book d v a n c e d m i c r o d e v i c e s n 1992 Advanced Micro Devices, Inc. Advanced Micro Devices reserves the right to make changes in its products


    OCR Scan     		PDF Am27LV020 6262A apm 4550 ALL TYPE tv IC DATA AND manual substitution BOOK transistor book Hex schmitt trigger ecl i386SX PROGRAMMER REFERENCE CPU BOARD OF AOC 20S 53c94 NCR 17058a ALL TYPE IC DATA AND manual substitution BOOK intel 386sx overdrive

    Untitled

    Abstract: No abstract text available
    Text: ZI F IN A L A m 2 8 F 5 1 2 Advanced Micro novices 512 Kilobit 65,536 x 8-Bit CMOS 12.0 Volt, Bulk Erase Flash Memory DISTINCTIVE CHARACTERISTICS • H igh p e rfo rm a n ce ■ — 70 ns maximum access time ■ CMOS Low power consumption ■ ■ C o m pa tib le w ith JE D E C -standard byte -w id e


    OCR Scan     		PDF 32-Pin Am28F512

    Untitled

    Abstract: No abstract text available
    Text: »MR l i las« P R E L IM IN A R Y il Am27LV020 Advanced Micro Devices 262,144 x 8-Bit CMOS Low Voltage, One Time Programmable Memory DISTINCTIVE CHARACTERISTICS • 3.3 V ± 0.3 V Vcc read o peration Program voltage 12.75 ± .25 V ■ High p erfo rm an ce at 3.3 Vcc


    OCR Scan     		PDF Am27LV020

    am28f020-95

    Abstract: M28F020
    Text: a A dvance In fo rm a tio n Advanced Micro Devices Am28F020 262,144 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • ■ High performance - 90 ns maximum access time ■ ■ Flasherase or Embedded Erase™ Electrical Bulk Chip-Erase - Two second typical chip-erase


    OCR Scan     		PDF Am28F020 32-Pin 28F020-95C am28f020-95 M28F020

    28F256

    Abstract: No abstract text available
    Text: a F IN A L Advanced Micro Devices Am28F256 32,768 x 8-Bit CMOS Flash Memory DISTINCTIVE CHARACTERISTICS • High performance - ■ Low power consumption - I 30 mA maximum active current 100 \>A maximum standby current No data retention power Compatible with JEDEC-standard byte-wide


    OCR Scan     		PDF Am28F256 32-pin 28F256 28F256