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    HA 1329 IC Search Results

    HA 1329 IC Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    74HC4053FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SPDT(1:2)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T125FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL2T126FK Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Buffer, SOT-765 (US8), -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation
    74HC4051FT Toshiba Electronic Devices & Storage Corporation CMOS Logic IC, SP8T(1:8)/Analog Multiplexer, TSSOP16B, -40 to 125 degC Visit Toshiba Electronic Devices & Storage Corporation
    7UL1G07FU Toshiba Electronic Devices & Storage Corporation One-Gate Logic(L-MOS), Non-Inverter Buffer (Open Drain), USV, -40 to 85 degC Visit Toshiba Electronic Devices & Storage Corporation

    HA 1329 IC Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1000BASE-BX10-U

    Abstract: EN-60825-2 EIA-JESD22-A114 RIN12OMA
    Text: SFBD-1250A4Q1R Small Form Factor Bi-Directional Transceiver Module for Gigabit Ethernet FEATURES RoHS compliant IEEE802.3ah Gigabit Ethernet compliant SFF package with bi-directional SC receptacle Upstream 1.25Gbps transmitter with 1310nm FP Laser, and downstream 1.25Gbps receiver


    Original     		PDF SFBD-1250A4Q1R IEEE802 25Gbps 1310nm 1490nm 1550nm 1650nm SFBD-1250xxxx 1000BASE-BX10-U 1000BASE-BX10-U EN-60825-2 EIA-JESD22-A114 RIN12OMA

    upc 1270 H

    Abstract: No abstract text available
    Text: SFBD-1250A4Q1R Small Form Factor Bi-Directional Transceiver Module for Gigabit Ethernet FEATURES z RoHS compliant z IEEE802.3ah Gigabit Ethernet compliant z SFF package with bi-directional SC receptacle z Upstream 1.25Gbps transmitter with 1310nm FP Laser, and downstream 1.25Gbps receiver


    Original     		PDF SFBD-1250A4Q1R IEEE802 25Gbps 1310nm 1490nm 1550nm 1650nm SFBD-1250xxxx E239394 upc 1270 H

    Untitled

    Abstract: No abstract text available
    Text: OPEP-33-A4Q1SC 1.25Gbps Upstream/1.25Gbps Downstream GE-PON ONU Transceiver FEATURES  RoHS compliant  IEEE802.3ah Gigabit Ethernet compliant  2x5 pin SFF package with SC Receptacle  1310nm Burst Mode 1.25Gbps transmitter, and 1490nm Continuous Mode 1.25Gbps


    Original     		PDF OPEP-33-A4Q1SC 25Gbps IEEE802 1310nm 1490nm 25Gbps 1550nm 1650nm

    Untitled

    Abstract: No abstract text available
    Text: OPEP-33-A4Q3R 1.25Gbps Upstream/1.25Gbps Downstream GE-PON ONU Transceiver FEATURES RoHS compliant IEEE802.3ah Gigabit Ethernet compliant 2x5 pin SFF package with SC pigtail fiber 1310nm Burst Mode 1.25Gbps transmitter, and 1490nm Continuous Mode 1.25Gbps


    Original     		PDF OPEP-33-A4Q3R 25Gbps IEEE802 1310nm 1490nm 25Gbps 1550nm 1650nm

    upc 1270 H

    Abstract: EIA-JESD22-A114
    Text: OPEP-33-A4Q1RC 1.25Gbps Upstream/1.25Gbps Downstream GE-PON ONU Transceiver FEATURES z RoHS compliant z IEEE802.3ah Gigabit Ethernet compliant z 2x5 pin SFF package with SC Receptacle z 1310nm Burst Mode 1.25Gbps transmitter, and 1490nm Continuous Mode 1.25Gbps


    Original     		PDF OPEP-33-A4Q1RC 25Gbps IEEE802 1310nm 1490nm 25Gbps 1550nm 1650nm upc 1270 H EIA-JESD22-A114

    EIA-JESD22-A114

    Abstract: IEC-61754-4 OPEP-33-A4Q3RZ OPEP-33-A4Q3
    Text: OPEP-33-A4Q3RZ 1.25Gbps Upstream/1.25Gbps Downstream GE-PON ONU Transceiver FEATURES z RoHS compliant z IEEE802.3ah Gigabit Ethernet compliant z 2x5 pin SFF package with SC pigtail fiber z 1310nm Burst Mode 1.25Gbps transmitter, and 1490nm Continuous Mode 1.25Gbps


    Original     		PDF OPEP-33-A4Q3RZ 25Gbps IEEE802 1310nm 1490nm 25Gbps 1550nm 1650nm EIA-JESD22-A114 IEC-61754-4 OPEP-33-A4Q3RZ OPEP-33-A4Q3

    ifr 4200 panel

    Abstract: 1329
    Text: Contents Block Diagram. 1 Pin A ssignm ent. 2 Operating F


    OCR Scan     		PDF S-4543A S-4543A 32x120) 33x120) S-4543A_ ifr 4200 panel 1329

    ws57c257

    Abstract: ws57c65 WS*57c257
    Text: WAFER SCALE I N T E GR A T I O N 3^E D B T S 3 T b cìa QQOObbT 7 H IlilA F WS57C210M PRELIMINARY WAFERS CALE INTEGRATION, INC. 1 Meg 64K x 16 EPROM MODULE KEY FEATURES • Fast Programming • High-Density 64K x 16 CMOS EPROM Module — • Utilizes Four WS57C256F High-Speed


    OCR Scan     		PDF WS57C210M WS57C256F WS57C65 WS57C257 WS57C210M 576-bit Only3-119 WS57C210M-55R WS57C210M-70R ws57c257 ws57c65 WS*57c257

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY MÛE 02S7SSÖ D ÜDBGBbö 4 HIAMD4 T -4 6 -1 3-29 * Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time—70ns ■ JEDEC-approved pinout ■ Low power consumption: - 1 0 0 |xA maximum standby current


    OCR Scan     		PDF 02S7SSÃ Am27C512 512K-btt, D0303Ã AID27C512 T-46-13-29

    AM27C512

    Abstract: AM27C512-120DC
    Text: ADV MICRO MEMORY MÛE 02S7SSÖ D ÜDBGBbö 4 HIAMD4 T-46-13-29 * Advanced Micro Devices A m 2 7 C 5 1 2 65,536 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access time—70ns ■ JEDEC-approved pinout ■ Low power consumption: - 1 0 0 |xA maximum standby current


    OCR Scan     		PDF 303bfi T-46-13-29 Am27C512 512K-bit, D0303Ã AIYI27C512 AM27C512-120DC

    Untitled

    Abstract: No abstract text available
    Text: SO LITRO N D E V IC E S INC b lC f~ x ¿ D ñ3bñbOE DDG14CÍ3 1 • ■ o o T C o f " q S C. u ;ift* SOD 1 &<;'(<-r - / / J o \Jc5(2 ü ú t-T V ? 6 ci- / / / J Í t C r / i- 'A ^ !| T Y P E NO . ^ GROUP A • S a d X V o u r V i U t t . S V 3 V o u r V / tj z


    OCR Scan     		PDF DDG14C

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY 33E D GSS7SSÖ 0 □ 2 fl fl ü E A m 2 7 C 1 0 0 I AMD4 b Advanced Micro Devices 1 Megabit (131,072 x 8-Bit) ROM Compatible CMOS EPROM DISTINCTIVE CHARACTERISTICS • ■ ■ ■ EIAJ 32 pin DIP package Pinout Compatible with 28 pin ROM


    OCR Scan     		PDF Am27C100 CDV032 T-46-13-25 Atn27C100

    ATMEL AT27c512

    Abstract: No abstract text available
    Text: ETE D AT H E L CO R P • 1Q74177 ODGlOGb 4 AT27C512 Features • Low Power CMOS Operation • • • • • • • • • 100 nA max. Standby 40 mA max. Active at 5 MHz Fast Read Access Time-120ns Wide Selection of JEDEC Standard Packages Including OTP


    OCR Scan     		PDF 1Q74177 AT27C512 Time-120ns 32-Pad 200mA AT27C512 Military/883C Milltary/883C ATMEL AT27c512

    ATMEL AT27c512

    Abstract: AT27C512 ATMEL AT27c512 PLCC at27c512-15di AT27C512-15J 27C512 T-25 27C512* PLCC AT27C512-20DM AT27C512-15
    Text: ETE D AT H E L CO R P • 1Q74177 ODGlOGb 4 AT27C512 Features • Low Power CMOS Operation • • • • • • • • • 100 nA max. Standby 40 mA max. Active at 5 MHz Fast Read Access Time-120ns Wide Selection of JEDEC Standard Packages Including OTP


    OCR Scan     		PDF 1Q74177 AT27C512 Time-120ns 32-Pad 200mA A0-A15 28DW6 AT27C512-25DI AT27C512-25LI AT27C512-25PI ATMEL AT27c512 ATMEL AT27c512 PLCC at27c512-15di AT27C512-15J 27C512 T-25 27C512* PLCC AT27C512-20DM AT27C512-15

    AM27C64

    Abstract: DG3032 AM27C64-90DC
    Text: ADV MICRO MEMORY MAE D • 0257550 0030312 T ■ AflDM Advanced Micro Devices Am27C64 8,192 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ ■ Fast access tlme-55 ns Low power consumption: -100 jiA maximum standby current ■ JEDEC-approved pinout ■


    OCR Scan     		PDF Am27C64 tlme-55 64K-bjt, DG3032b T-46-13-29 DG3032 AM27C64-90DC

    AM27C128

    Abstract: zi11
    Text: ADV MI C RO MEMORY 4 ÔE D 055752Û 003G327 1 «AMD4 T -4 6 -1 3-29 & Advanced Micro Devices Am27C128 16,384 x 8-Bit CMOS EPROM DISTINCTIVE CHARACTERISTICS • Fast access tlme-55 ns JEDEC-approved pinout ■ Low power consumption: -1 0 0 pA maximum standby current


    OCR Scan     		PDF 003G327 T-46-13â Am27C128 tlme-55 128K-bit, T-46-13-29 1420-009A zi11

    LFT 3A

    Abstract: HA 1329 2SD1329
    Text: HITACHI 2SD1329 R SILICON NPN TRIPLE DIFFUSED LOW FREQ UEN CY PO W ER AMPLIFIER PO W ER SWITCHING I. Base 2 C ollector (R a n g e 3 E m m er (D im en sio n s in m m ) {JE D E C TO-220AB} • A BSO LU T E MAXIMUM RATINGS (Ta=25°C) Item Symbol MAXIMUM COLLECTOR DISSIPATION


    OCR Scan     		PDF 2SD1329 O-220AB} 2SDI329Â LFT 3A HA 1329

    Untitled

    Abstract: No abstract text available
    Text: ATMEL CORP 43E D m 1D74177 000173=1 7 I ATM AT27HC1024 Features • Very Fast Read Access Time •55ns • Low Power CMOS Operation 8 mA max. Standby 80 mA max. Active at 10 MHz • Wide Selection of JED EC Standard Packages Including OTP 40-Lead 600 mil Cerdlp and OTP Plastic


    OCR Scan     		PDF 1D74177 AT27HC1024 40-Lead 44-Pad 200mA 40DW6 Miiitary/883C Military/883C

    AT27HC1024

    Abstract: AT27C1024 AT4014
    Text: ATMEL CORP 43E D m 1D74177 000173=1 7 I ATM AT27HC1024 Features • Very Fast Read Access Time •55ns • Low Power CMOS Operation 8 mA max. Standby 80 mA max. Active at 10 MHz • Wide Selection of JED EC Standard Packages Including OTP 40-Lead 600 mil Cerdlp and OTP Plastic


    OCR Scan     		PDF 40-Lead 44-Pad 200mA AT27HC1024 T-46-/3-25 AO-A15 O4-12LM 40DW6 AT27HC1024-12DM/883 AT27HC1024-12KM/883 AT27C1024 AT4014

    AM270256

    Abstract: AM27C256 AM27C256-55 IN30B4
    Text: ADV MI CRO MEMORY •4ÖE » OSS7SSÔ DÜ3034E ö • AMD4 T—46—73-29 Advanced Micro Devices Am27C256 32,768 x 8-Blt CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Fast access tim e-55 ns ■ Low power consum ption: -100 fiA maximum standby current Programming voltage: 12.75 V


    OCR Scan     		PDF Am27C256 tIme-55 128K-bit, D257S2Ã 0D3035b T-46-73-29 8007-009A AM270256 AM27C256-55 IN30B4

    AT27LV256R

    Abstract: AT27LV256R-30 1N914 AT27C256R
    Text: ATMEL CORP m 43E D 1D7417? 0 0 01 7 2 ^ D SB ATM AT27LV256R T-Y6-/3-2 9 T-H6 -G-25 Features • • • • • • • • • • • W ide P ow er S upply R ange, 3.0 V D C to 5.5 V D C C om patible w ith JE D E C S tandard A T27C 256R Low P ow er 3-V o lt C M O S O peration


    OCR Scan     		PDF 1D7417? AT27LV256R AT27C256R 110mW 300ns 28-Lead 32-Pad 200mA Ra27LV256R D00173S AT27LV256R-30 1N914 AT27C256R

    Untitled

    Abstract: No abstract text available
    Text: ADV MICRO MEMORY MAE D • 0257550 00303^0 S ■AN»4 T -4 6 -1 3-29 Am27C010 Advanced Micro Devices 1 Megabit (131,072 x 8-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ■ Easy upgrade from 28-Pin JEDEC EPROMs ■ Fast access time—100 ns ■ Low power consumption:


    OCR Scan     		PDF Am27C010 28-Pin 32-Pin 0205-009A AITI27C010

    Untitled

    Abstract: No abstract text available
    Text: HV20220 HV20320 Supertex inc. Low Charge Injection 8-Channel High Voltage Analog Switch Ordering Information_ Package Options V PP - V NN 28-pin plastic DIP 28-lead plastic chip carrier 48-lead TQFP Die HV20220X 200V HV20220P


    OCR Scan     		PDF HV20220 HV20320 28-pin 28-lead 48-lead HV20220X HV20220P HV20220PJ HV20220FG HV20320PJ

    Am27C4096

    Abstract: AM27C4096-120/BQA
    Text: ADV MICRO MEMORY 4ÖE D 025755Ö Prelim inary 0G3DS30 T «AMD4 T—46—1 3-29 Am27C4096 a Advanced Micro Devices 4 Megabit (262,144 x 16-Bit) CMOS EPROM DISTINCTIVE CHARACTERISTICS ± 10% power supply tolerance standard on most speeds 100% Flashrite programmlng


    OCR Scan     		PDF 0D3GS30 T-46-13-29 Am27C4096 16-Bit) 40-pin 44-pin DD30S44 T-46-13-29 14971-006b AM27C4096-120/BQA