Schematics 5250
Abstract: schematic 5250 GP 035 F QFN 3X3 A113 A114 A115 AN1955 C101 JESD22
Text: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier Designed for 802.11a applications with frequencies from 4900 to 5900 MHz. • 23 dBm P1dB CW @ 5.25 GHz
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MMG5004N
MMG5004NR2
Schematics 5250
schematic 5250
GP 035
F QFN 3X3
A113
A114
A115
AN1955
C101
JESD22
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Untitled
Abstract: No abstract text available
Text: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier 4.9-5.9 GHz, 24 dB, 23 dBm 802.11a WLAN POWER AMPLIFIER InGaP HBT CASE 1483-01 QFN 3x3
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MMG5004N
MMG5004NR2
MMG5004N
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Untitled
Abstract: No abstract text available
Text: Document Number: MMG5004N Rev. 0, 8/2006 Freescale Semiconductor Technical Data Heterojunction Bipolar Transistor Technology InGaP HBT MMG5004NR2 WLAN Power Amplifier 4.9-5.9 GHz, 24 dB, 23 dBm 802.11a WLAN POWER AMPLIFIER InGaP HBT ARCHIVE INFORMATION
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MMG5004N
MMG5004NR2
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SHDSL chips
Abstract: elektronik DDR "embedded dram" tsmc
Text: glossar Glossar 3G Kurz für ‘dritte Generation’. Wird für Mobiltelefonverbindungen verwendet, die den heutigen Standard hinsichtlich Geschwindigkeit, Kapazität und technischer Ausgereiftheit des Datentransports bei weitem übertreffen. ADSL ‘Asymmetric Digital Subscriber Line’ asymmetrische digitale Anschlussleitung .
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gsm booster circuit
Abstract: mrf373al u880 RF MODULATORS mrf9030n MRF6VP11KH MRF6VP2600H MRF5S21045N circuit booster gsm mrfe6s9060
Text: RF Product Focus Products Quarter 4, 2007 SG1009Q42007 Rev 0 RF Industrial, Scientific and Medical Transistors RF LDMOS Power Transistors RF GaAS Power Transistors RF WiMAX, WiBro, BWA Power Transistors RF Amplifier ICs and Modules RF General Purpose Amplifiers
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SG1009Q42007
MRF6VP11KH
MRF6VP21KH
MRF6VP41KH/HS
gsm booster circuit
mrf373al
u880
RF MODULATORS
mrf9030n
MRF6VP2600H
MRF5S21045N
circuit booster gsm
mrfe6s9060
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12065A104JAT2A
Abstract: 12065A105JAT2A F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2
Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz
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MMG2401
MMG2401NR2
12065A104JAT2A
12065A105JAT2A
F QFN 3X3
A113
A114
A115
C101
JESD22
MMG2401
MMG2401NR2
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12065A104JAT2A
Abstract: F QFN 3X3 020C JESD22 MMG2401 MMG2401R2 A114-G 12065A105JAT2A 156 qfn TRANSISTOR A114 E
Text: Freescale Semiconductor Technical Data MMG2401 Rev. 0, 11/2004 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz MMG2401R2 • 26.5 dBm P1dB @ 2450 MHz • • • •
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MMG2401
MMG2401R2
12065A104JAT2A
F QFN 3X3
020C
JESD22
MMG2401
MMG2401R2
A114-G
12065A105JAT2A
156 qfn
TRANSISTOR A114 E
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ML200M
Abstract: F QFN 3X3 A113 A114 A115 C101 JESD22 MMG2401 MMG2401NR2 12065A104JAT2A
Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 2, 4/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz
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MMG2401
MMG2401NR2
ML200M
F QFN 3X3
A113
A114
A115
C101
JESD22
MMG2401
MMG2401NR2
12065A104JAT2A
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12065A104JAT2A
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 3, 5/2006 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz
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MMG2401
MMG2401NR2
12065A104JAT2A
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12065A104JAT2A
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG2401 Rev. 2, 4/2005 Indium Gallium Phosphorus HBT WLAN Power Amplifier Designed for 802.11g and dual mode applications with frequencies from 2400 to 2500 MHz. MMG2401NR2 • 26.5 dBm P1dB @ 2450 MHz
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MMG2401
MMG2401NR2
MMG2401
12065A104JAT2A
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din IEC 747
Abstract: Semiconductor Group igbt Datenbuch Transistor Datenbuch
Text: Erläuterungen der Datenblattwerte Explanation of Data Sheet Parameters 1 Symbole, Begriffe, Normen 1 Symbole und Begriffe der verwendeten Größen: Symbols, Terms, Standards Symbols and Terms of Magnitudes Used: Symbole Symbols Begriffe Terms C Kapazität; Kollektor
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SPEED CALCULATION FROM BLDC HALL SENSOR OUTPUT
Abstract: DC MOTOR SPEED CONTROLLER bldc c source code pwm c code 3 phase bldc c source code MC56F8013 mc56f8013 example c program 3 phase pwm generator brushless dc motor speed control Hall washing machine service manual 3 phase motor control
Text: 3-Phase BLDC Motor Control with Hall Sensors Using the MC56F8013 Targeting User Guide 56F800 16-bit Hybrid Controllers 56F8013BLDCUG Rev. 0 04/2005 freescale.com TABLE OF CONTENTS About This Book v Audience . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . v
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MC56F8013
56F800
16-bit
56F8013BLDCUG
SPEED CALCULATION FROM BLDC HALL SENSOR OUTPUT
DC MOTOR SPEED CONTROLLER
bldc c source code
pwm c code 3 phase
bldc c source code MC56F8013
mc56f8013 example c program
3 phase pwm generator
brushless dc motor speed control Hall
washing machine service manual
3 phase motor control
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AN1955
Abstract: ECUV1H150JCV FR408 MMG3005NT1
Text: Freescale Semiconductor Technical Data Document Number: MMG3005NT1 Rev. 1, 11/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3005NT1 Broadband High Linearity Amplifier The MMG3005NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small -signal, high
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MMG3005NT1
MMG3005NT1
AN1955
ECUV1H150JCV
FR408
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MMG3005NT1 Rev. 0, 11/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3005NT1 Broadband High Linearity Amplifier The MMG3005NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small- signal, high
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MMG3005NT1
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siemens automotive relay dc 12v
Abstract: C166 GPS05094 siemens relay dc 12v 12V siemens relay
Text: Target Data Sheet TLE 6225 G Smart Quad Low-Side Switch Features • Shorted circuit protection • Overtemperature protection • Overvoltage protection • Direct parallel control of the inputs • Inputs high or low active programmable • General fault flag
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MC144110P
Abstract: MC144111P MC144111
Text: Freescale Semiconductor Technical Data MC144110/D Rev. 2, 1/2005 MC144110 MC144110 and MC144111 Package Information P Suffix Plastic DIP Case 707 Package Information DW Suffix SOG Package Case 751D MC144111 Digital-to-Analog Converters with Serial Interface
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MC144110/D
MC144110
MC144110
MC144111
MC144111
MC144110P
MC144111P
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irl 3710
Abstract: 87541 ECUV1H150JCV pf 83744 A113 A114 A115 AN1955 C101 FR408
Text: Freescale Semiconductor Technical Data Document Number: MMG3004NT1 Rev. 0, 11/2005 Heterojunction Bipolar Transistor Technology InGaP HBT MMG3004NT1 Broadband High Linearity Amplifier The MMG3004NT1 is a General Purpose Amplifier that is internally prematched and designed for a broad range of Class A, small- signal, high
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MMG3004NT1
MMG3004NT1
irl 3710
87541
ECUV1H150JCV
pf 83744
A113
A114
A115
AN1955
C101
FR408
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siemens datenbuch
Abstract: No abstract text available
Text: SIEMENS 1 Erläuterungen der Datenblattwerte Explanation of Data Sheet Parameters Symbole, Begriffe, Normen 1 Symbole und Begriffe der verwendeten Größen Symbols, Terms, Standards Symbols and Terms of Magnitudes Used Symbole Symbols Begriffe Terms A Anode
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siemens dioden
Abstract: Transistor Datenbuch Siemens Halbleiterbauelemente A66762-A4013-A58 dioden siemens
Text: SIEMENS 1 Erläuterungen der Datenblattwerte Explanation of Data Sheet Parameters Symbole, Begriffe, Normen 1 Symbole und Begriffe der verwendeten Größen Symbols, Terms, Standards Symbols and Terms of Magnitudes Used Symbole Symbols Begriffe Terms A Anode
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Untitled
Abstract: No abstract text available
Text: SIEMENS ICs for Communications Mixer DC - 2.5GHz and Vector Modulator 0.8 - 1.5GHz PMB 2201 Version 1.2 Preliminary Data Sheet 05.97 • ä235bOS DDlöblE 0^2 ■ ^ Edition 05.97 Published by Siemens AG, Bereich Halbleiter, MarketingKommunikation, BalanstraBe 73,
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235bOS
z-1453
1429MHz
1453MHz
fl235b05
P-TSSOP-24
0E35bD5
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Untitled
Abstract: No abstract text available
Text: SIEMENS ICs for Communications LNA/MIXER P M B 2332 Version 1.2 Preliminary Specification 06.96 T2332-XV12-P2-7600 053SbO S 0 C H flb 4 3 7bfc> E d itio n 06 .96 A u s g a b e 06 .9 6 P u b lis h e d b y S ie m e n s A G , B e re ic h H a lb le ite r, M a rk e tin g K o m m u n ik a tio n , B ala n s tra B e 73,
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T2332-XV12-P2-7600
053SbO
fl235b05
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PMB4220
Abstract: pmb4420 PMB 4420 Siemens pmb 4420 transistor smd marking gk 5-PIN MARKING PAX PMB4819 smd diode marking KC L50Q 4819
Text: tM I fl s ?l s s if 3 No. SI IC PMB4819 CODE NO. ^ 7| fl- S s| g Siemens LTD. Seoul 726,Yeoksam-dong,Kangnam-gu Seoul.C.P.O Box 3001,Korea Tel: 5277-700 Fax: 5277-779 SIEMENS ICs for Communications Power Amplifier for DECT Application PMB 4819 Version 1.0
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PMB4819
100nF
100nF
PMB4819
PMB4220
pmb4420
PMB 4420
Siemens pmb 4420
transistor smd marking gk
5-PIN MARKING PAX
smd diode marking KC
L50Q
4819
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AEG igbt
Abstract: Siemens Halbleiterbauelemente siemens dioden Siemens Transistoren esd safe
Text: SIEMENS 1 Erläuterungen der Datenblattwerte Explanation of Data Sheet Parameters Symbole, Begriffe, Normen Symbole Größen: und Begriffe der 1 verwendeten Symbols, Terms, Standards Symbols and Terms of Magnifudes Used: Sym bole Symbols Begriffe Terms C Kapazität; Kollektor
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siemens automotive relay dc 12v
Abstract: lt 6225
Text: SIEMENS Target Data Sheet TLE 6225 G Smart Quad Low-Side Switch Product Summary Features • Shorted circuit protection Supply voltage Vs • Overtemperature protection Drain source voltage VDS AZ max • Overvoltage protection On resistance (Tj = 25 °C)R3N(max)
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