Untitled
Abstract: No abstract text available
Text: SSD PRELIMINARY DATASHEET C7410 HAMAMATSU Digital Radiology Flat Panel Sensor C7410 PRELIMINARY DATASHEET Rev. 3.6 Aug. 01, 2000 . Acquire Digital X-ray Image in Real Time by the C7410 . HAMAMATSU now introduces the states of the art products, a key device for the medical or non-destructive
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C7410
C7410
S-164
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C11701DK-40
Abstract: C11700DK-40 C11700 C11701 1/USB/C12137
Text: NEWS 01 2012 TM SYSTEMS PRODUCTS PAGE 28 World's first Gen. II sCMOS Camera: Hamamatsu presents ORCA-Flash4.0 SOLID STATE PRODUCTS PAGE 12 Thermopile Detectors for Energy Saving and Security ELECTRON TUBE PRODUCTS PAGE 25 New H11706 and H12056 PMT Modules with Internal Shutters
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H11706
H12056
C12200-321
T1126X,
T11722
S11670-01
S11151-2048
16-Channelax:
DE128228814
C11701DK-40
C11700DK-40
C11700
C11701
1/USB/C12137
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MPPC 001 ci
Abstract: china nobel tv diagram
Text: NEWS 02 2013 100 90 70 Relative light ou tput % 80 60 50 40 30 20 10 300 400 600 500 h (nm) gt en el av W Cover Story PAGE 2 Hamamatsu Photonics K.K. celebrates 60 years of excellence in Photonics OPTO-SEMICONDUCTOR PRODUCTS PAGE 15 New type of Multi-Pixel Photon
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S11830-3344MF
Abstract: No abstract text available
Text: NEWS 01 2011 Solid state PRODUCTS PAGE 11 Thumb-sized “ultra-compact spectrometer” with VIS-NIR response SOLID STATE PRODUCTS PAGE 16 New developments for the MPPC ELECTRON TUBE PRODUCTS PAGE 21 H2D2 light sources L11788 series, L11789 series SYSTEMS PRODUCTS
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L11788
L11789
C11367
DE128228814
S11830-3344MF
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Untitled
Abstract: No abstract text available
Text: CW LASER DIODES L10415 SERIES Peak Emission Wavelength 940nm, Radiant Output Power 1W CW FEATURES Radiant output power (CW) : 1W Peak Emission Wavelength : 940 nm ± 10 nm Beam Area Size : 100 mm x 1 mm High stability Long life Compact APPLICATIONS Medical instrument
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L10415
940nm,
L10415-42,
L10415-72,
L10415-62
SE-164-40
LLD1026E02
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Untitled
Abstract: No abstract text available
Text: High-power Laser Diode CW Single Bar Module L8413 Series •FEATURES ●High optical power: CW 60 W ●High stability ●Long life ●Compact ■APPLICATIONS ●Measuring instrument ●Pumping source for solid state laser ●IR illumination for surveillance
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L8413
SE-171-41
LLDM2002E01
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R7600U-300
Abstract: MOST150 S11518
Text: NEWS 02 2010 SYSTEM PRODUCTS PAGE 29 2.8M Scientific CMOS board-level camera SOLID STATE PRODUCTS PAGE 15 New InGaAs PIN photodiodes ELECTRON TUBE PRODUCTS New MCP assemblies PAGE 27 SYSTEMS PRODUCTS Quantaurus-QY PAGE 30 Highlights SOLID STATE PRODUCTS PAGE 07
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G11608
G11608-256DA
G11608-512DA
DE128228814
R7600U-300
MOST150
S11518
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PDF
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H10769A
Abstract: H10770A H7422
Text: NEWS 01 2010 SOLID STATE PRODUCTS PAGE 10 New silicon infrared enhanced photodiodes for scientific measurement and YAG laser monitoring SOLID STATE PRODUCTS CCD image sensors S11510 series PAGE 12 ELECTRON TUBE PRODUCTS Side-on PMT R9876, R11540 PAGE 25 SYSTEMS PRODUCTS
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S11510
R9876,
R11540
photomultiD-82211
DE128228814
H10769A
H10770A
H7422
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hamamatsu r2490
Abstract: Hamamatsu Photomultiplier Socket 14 Pin R2490-05 367 al APPA 39 TPMH1055E01 TPMH60154EA E678 ha 741 ic hamamatsu 935
Text: HAMAMATSU TECHNICAL DATA Oct. 1992 PHOTO M ULTIPLIER TUBE R2490-05 Stable Operation in High Magnetic Fields beyond 1 Tesla 2 Inch Diameter, Proximity Photocathode and Mesh Dynodes GENERAL Parameters Spectral Response Wavelength of Maximum Response Material
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R2490-05
TPMH1055E01
hamamatsu r2490
Hamamatsu Photomultiplier Socket 14 Pin
R2490-05
367 al
APPA 39
TPMH1055E01
TPMH60154EA
E678
ha 741 ic
hamamatsu 935
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Untitled
Abstract: No abstract text available
Text: LOW-VOLTAGE HAMAMATSU OPERATION PHOTO 1C TECHNICAL DATA S4810 Operates from low-voltage supply of 2.2V operable by battery FEATURES • Low-voltage operation: 2.2 to 7V •Subminiature package with lens •Low current consumption •Digital output (open collector)
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S4810
S4810
KPIC1005E02
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S4285-61
Abstract: S4282-11 S5943 7-J12
Text: LIGHT MODULATION PHOTO ICs S4282-11, S5943 S4282-51, S4285-61 HAMAMATSU TECHNICAL DATA For optical synchronous detection under high background light condition FEATURES • Superior allowable background light level. 10000b: Typ. S4282-11, S4282-51 4000k Typ. (S5943, S4285-61)
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S4282-11,
S5943
S4282-51,
S4285-61
10000b:
S4282-51)
4000k
S5943,
S4285-61)
S4285-61
S4282-11
7-J12
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S4285-61
Abstract: No abstract text available
Text: LIGHT MODULATION PHOTO ICs S4282-11, S5943 S4282-51, S4285-61 HAMAMATSU TECHNICAL DATA For optical synchronous detection under high background light condition FEATURES • Superior allowable background light level. 10000k Typ. S4282-11, S4282-51 4000k Typ. (S5943, S4285-61)
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S4282-11,
S5943
S4282-51,
S4285-61
10000k
S4282-51)
4000k
S5943,
S4285-61)
S4285-61
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Untitled
Abstract: No abstract text available
Text: LIGHT MODULATION PHOTO ICs S6986, S6846, S4282-51, S7136 HAMAMATSU PRELIM INARY DATA Jul. 1997 For optical synchronous detection under high background light condition FEATURES • Superior allowable background light level m S6986, S4282-51: 10000 Ix Typ. •
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S6986,
S6846,
S4282-51,
S7136
S4282-51:
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S2153
Abstract: S3274-01
Text: H A M A M A T S U EPOXY-MOLDED PACKAGE PSD POSITION-SENSITIVE DETECTORS TECHNICAL DATA S3271, S3272, S3273, S3274 New one-dimensional PSD with superior performance in position detection and disturbance light noise The Hamamatsu S3271, S3272, S3273, and S3274 series are
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S3271,
S3272,
S3273,
S3274
S3274
S2153
S3274-01
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Untitled
Abstract: No abstract text available
Text: 422^01 0003M75 7T1 HPK J HAM AM ATSU EPOXY-MOLDED PACKAGE PSD POSITION-SENSITIVE DETECTORS TECHNICAL DATA S3271, S3272, S3273, S3274 New one-dimensional PSD with superior performance in position detection and disturbance light noise The Hamamatsu S3271, S3272, S3273, and S3274 series are
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0003M75
S3271,
S3272,
S3273,
S3274
S3274
S2153
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transistor b1392
Abstract: transistor j 6910
Text: HAMAMATSU PRELIMINARY DATA Nov. 1997 CCD AREA IMAGE SENSORS S7030/S7031 SERIES Back thinned FFT-CCDs FEATURES • Non-cooled types: S7030 series One-stage TE-cooled types: S7031 series Two-stage TE-cooled types are optional. • Pixel size: 24 pm x 24 pm
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S7030/S7031
S7030
S7031
dire-3750,
S-164
KMPD1023E02
transistor b1392
transistor j 6910
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AS66
Abstract: No abstract text available
Text: HAMAMATSU Si Photodiode S6626, S6838 PRELIMINARY DATA Feb.1997 High reliability photodiodes for visible light detection FEATURES #W ide operating temperature range: -40 to +110 1C •S m a ll deterioration in high tempetature and high humidity •V is ib le compensation filter is useless
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S6626,
S6838
AS6626
AS6838
S6626
S-164
KSPD1015E01
AS66
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S5226
Abstract: 740nm S1227 10X10 S1226 S1336 S1337 S5226-8BQ S5227 S5227-1010BQ
Text: HIGH STABILITY UV SILICON PHOTODIODES S5226, S5227 SERIES HAMAMATSU TECHNICAL DATA Low Capacitance, High Shunt Resistance and High Stability FEATURES • High UV s e n s itiv ity : 0.1 A/W A =200nm • • • • Low capacitance : 430P f } (S5226-8BQ, S5227-66BQ)
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S5226,
S5227
200nm
430pF
S5226-8BQ,
S5227-66BQ)
S1336,
S1337
S1226
S1227
S5226
740nm
10X10
S1336
S5226-8BQ
S5227-1010BQ
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R 906 HAMAMATSU
Abstract: S5980 bg101 S5981 S5106 S5107 S5990 S5991 KQC-BG101
Text: TWO-DIMENSIONAL PSDs S5990, S5991 HAMAMATSU Surface mount type PSDs tetra-lateral types FEATURES •L a rg e active area S5990: 5 x 5 mm S5991:10 x 10 mm •C h ip carrier package for surface mounting (automatic mount ing with solder reflow) thin package: 1.26 mmt
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S5990,
S5991
S5990:
S5991
S5990
R 906 HAMAMATSU
S5980
bg101
S5981
S5106
S5107
S5990
KQC-BG101
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Untitled
Abstract: No abstract text available
Text: Si PHOTODIODES S6428, S6429, S6430 HAMAMATSU Single color sensors FEATURES • For RGB red, green, and blue detection S6428: for blue (A,p=450 nm) S6429: for green (A.p=550 nm) S6430: for red (A.p=600 nm) • Non-senstivity in infrared region • Plastic packages: (6x8 mm)
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S6428,
S6429,
S6430
S6428:
S6429:
S6430:
S-164
1013E
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S6468
Abstract: S6468-05
Text: Si PIN PHOTODIODES WITH PRE-AMPLIFIER S6468 SERIES HAMAMATSU PRELIMINARY DATA Feb. 1998 High-speed sensors with pre-am p FEATURES APPLICATIONS • Cut-off frequency Vcc=5 V S6468:15 MHz S6468-02: 35 MHz S6468-05:50 MHz S6468-10:100 MHz • Low noise (f=1 MHz)
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S6468
S6468-02:
S6468-05
S6468-10
S6468:
S6468-05:
S6468,
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R 906 HAMAMATSU
Abstract: se468 S6468 S6468-02 S6468-05 S6468-10 46805
Text: Si PIN PHOTODIODES WITH PRE-AMPLIFIER S6468 SERIES HAMAMATSU PRELIMINARY DATA Feb. 1998 H ig h -s p e e d s en s o rs w ith p re-am p FEATURES APPLICATIONS • Cut-off frequency Vcc=5 V S6468: 15 MHz S6468-02: 35 MHz S6468-05: 50 MHz S 6468-10:100 MHz • Low noise (f=1 MHz)
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S6468
S6468:
S6468-02:
S6468-05:
S6468-10:
S6468,
R 906 HAMAMATSU
se468
S6468-02
S6468-05
S6468-10
46805
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L4887
Abstract: 420VA animal
Text: - F o r a n im al e x p e rim e n t o n ly - HAMAMATSU TECHNICAL DATA Sept. 1932 LIGHT SOURCE FOR PIT * Photo Chemical Induced Thrombosis L4887 P A T E N T PE N D IN G Possible to Induce Throm bosis w ithout Damage to Living Body L4887 can induce T hrom D osis w ith ou t dam ag e to
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L4887
L4887
14S87
VTECH-BT523.
262M2
4a-81
927Bi7
46-e-69O32190,
4i-08i9i-Ruui.
420VA
animal
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Untitled
Abstract: No abstract text available
Text: InGaAs PIN PHOTODIODES G6742-003/-01 H A M A M A TSU PRELIMINARY DATA Oct. 1997 Surface-mountable types FEATURES • Sm all chip-carrier package • High reliability • Low price APPLICATIONS • M onitoring laser diode •GENERAL RATINGS Parameter G6742-003
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G6742-003/-01
G6742-003
G6742-01
KIRD1016E01
S-164
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