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    HAMAMATSU AVALANCHE PHOTODIODE INGAAS GHZ Search Results

    HAMAMATSU AVALANCHE PHOTODIODE INGAAS GHZ Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    NR8360JP-BC-AZ Renesas Electronics Corporation φ 30 μm InGaAs Avalanche Photo Diode 14-PIN DIP Module With TEC Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR8300FP-CC-AZ Renesas Electronics Corporation 1000 to 1600 nm Optical Fiber Communications φ 30 µm InGaAs Avalanche Photo Diode Module Visit Renesas Electronics Corporation
    NR8800FS-CB-AZ/SH Renesas Electronics Corporation φ 80 μm InGaAs Avalanche Photo Diode Module for OTDR Applications Visit Renesas Electronics Corporation
    NR4211TH-AZ Renesas Electronics Corporation Receiver Limiting Tia, With Dca Function) Inalas Apd Receiver With Internal Pre-Amplifier For 10 Gb/S Applications Visit Renesas Electronics Corporation

    HAMAMATSU AVALANCHE PHOTODIODE INGAAS GHZ Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Light Detector laser

    Abstract: short distance measurement ir infrared diode
    Text: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that


    Original     		PDF KOTH0001E15 Light Detector laser short distance measurement ir infrared diode

    Untitled

    Abstract: No abstract text available
    Text: Devlp. PHOTODIODE InGaAs APD G8931-03 2.5 Gbps operation, avalanche photodiode Features Applications l 2.5 Gbps operation l Low capacitance l Active area: φ0.03 mm • General rating Parameter Active area ■ Absolute maximum ratings Parameter Forward current


    Original     		PDF G8931-03 SE-171 KAPD1011E02

    Avalanche photodiode APD

    Abstract: G8931-03 SE-171 hamamatsu low dark current APD avalanche photodiode ingaas ghz hamamatsu avalanche photodiode ingaas ghz
    Text: PHOTODIODE InGaAs APD G8931-03 2.5 Gbps operation, avalanche photodiode Features Applications l 2.5 Gbps operation l Low capacitance l Active area: φ0.03 mm l Optical fiber communications l SDH/SONET l Metro area network • General rating Parameter Active area


    Original     		PDF G8931-03 SE-171 KAPD1011E03 Avalanche photodiode APD G8931-03 hamamatsu low dark current APD avalanche photodiode ingaas ghz hamamatsu avalanche photodiode ingaas ghz

    Untitled

    Abstract: No abstract text available
    Text: Devlp. PHOTODIODE InGaAs APD G8931-03 2.5 Gbps operation, avalanche photodiode Features Applications l 2.5 Gbps operation l Low capacitance l Active area: φ0.03 mm • General rating Parameter Active area ■ Absolute maximum ratings Parameter Forward current


    Original     		PDF G8931-03 SE-171 KAPD1011E03

    Infrared detectors

    Abstract: dark detector application ,uses and working
    Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: 2007 Vol.1 NEWS Belgium / Denmark / France / Germany / Italy / Netherlands / North Europe & CIS / 16 models with different spectral response, resolution, sensitivity, etc. Select a model that fits your application 4 MPPC Multi-Pixel Photon Counter 8 10 Gbps ROSA


    Original     		PDF

    Sensors PSD

    Abstract: No abstract text available
    Text: Module products 1 Mini-spectrometers 1-1 1-2 1-3 1-4 1-5 1-6 1-7 Hamamatsu technologies Structure Characteristics Operation mode Evaluation software New approaches Applications 2 MPPC modules 2-1 2-2 2-3 2-4 2-5 Features How to use Characteristics New approaches


    Original     		PDF 16-element C9004) KACCC0426EB Sensors PSD

    near IR photodiodes

    Abstract: S8745-01 S8558
    Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5


    Original     		PDF KSPD0001E09 near IR photodiodes S8745-01 S8558