Selection guide
Abstract: No abstract text available
Text: Selection guide - March 2015 InGaAs Photodiodes Near infrared detectors with low noise and superb frequency characteristics HAMAMATSU PHOTONICS K.K. InGaAs Photodiodes Based on unique, in-house compound semiconductor process technology, Hamamatsu has designed and developed advanced InGaAs photodiodes that feature high speed, high
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KIRD0005E02
Selection guide
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LH0032
Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).
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G8931-04
G8931-04
SE-171
KAPD1018E01
LH0032
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G8931-20
Abstract: low dark current APD SE-171 G893 hamamatsu low dark current APD KAPDB0120EA hamamatsu ingaas APD
Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .
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G8931-20
G8931-20
SE-171
KAPD1019E03
low dark current APD
G893
hamamatsu low dark current APD
KAPDB0120EA
hamamatsu ingaas APD
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G8931-04
Abstract: LH0032 SE-171 OPTICAL NETWORK TERMINAL InGaAs apd photodiode
Text: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).
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G8931-04
G8931-04
SE-171
KAPD1018E02
LH0032
OPTICAL NETWORK TERMINAL
InGaAs apd photodiode
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InGaAs apd photodiode
Abstract: G8931-04 Ge APD SE-171 KAPDC0005EC 1NA100 low dark current APD hamamatsu ingaas APD
Text: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON The G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET synchronous optical network , G-PON (gigabit-capable passive optical network) and GE-PON (gigabit ethernet-passive optical network).
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G8931-04
G8931-04
SE-171
KAPD1018E03
InGaAs apd photodiode
Ge APD
KAPDC0005EC
1NA100
low dark current APD
hamamatsu ingaas APD
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .
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G8931-20
G8931-20
125hone:
SE-171
KAPD1019E01
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LH0032
Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD G8931-04 Time response characteristics compatible with SONET and G/GE-PON G8931-04 is an InGaAs APD that delivers a high-speed response of 2.5 Gbps required for trunk line optical fiber communications such as SONET Synchronous Optical Network , G-PON (Gigabit-capable Passive Optical Network) and GE-PON (Gigabit Ethernet-Passive Optical Network).
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G8931-04
G8931-04
SE-171
KAPD1018E01
LH0032
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .
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G8931-20
G8931-20
125hone:
SE-171
KAPD1019E01
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G8931-20
Abstract: LH0032 SE-171 low dark current APD APD OTDR
Text: PHOTODIODE InGaAs APD G8931-20 Large active area: φ0.2 mm, high-speed response: 0.9 GHz G8931-20 is a large area InGaAs APD designed for distance measurement, spatial light transmission and low-light-level detection, etc. Despite its large active area of φ0.2 mm, G8931-20 provides high-speed response typical cut-off frequency 0.9 GHz at M=10 .
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G8931-20
G8931-20
SE-171
KAPD1019E02
LH0032
low dark current APD
APD OTDR
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G8931-03
Abstract: SE-171
Text: PHOTODIODE InGaAs APD G8931-03 High-speed response: 2.5 Gbps, active area: φ0.03 mm Features Applications l 2.5 Gbps operation l Low capacitance l Optical fiber communications • General rating Parameter Active area Symbol - Value φ0.03 Unit mm Symbol IF
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G8931-03
SE-171
KAPD1011E01
G8931-03
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Untitled
Abstract: No abstract text available
Text: Devlp. PHOTODIODE InGaAs APD G8931-03 2.5 Gbps operation, avalanche photodiode Features Applications l 2.5 Gbps operation l Low capacitance l Active area: φ0.03 mm • General rating Parameter Active area ■ Absolute maximum ratings Parameter Forward current
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G8931-03
SE-171
KAPD1011E02
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R6094 pmt divider circuit
Abstract: Hamamatsu r6094 C9321CA-02 R4110U-74 AUTOMATIC STREET LIGHT CONTROLLER using IR sensor InGaas PIN photodiode chip back illuminated apd raman wafer 60g H9656 sensor x-ray
Text: New CCD for Low-Light Scientific Applications High-Speed InGaAs APD + TIA ROSA Highly Sensitive Image Intensifier with Large Active Area Flat-Panel Sensor Product Line Extended The Improved Macro Imaging System AEQUORIA Imaging-Based Plate Reader FDSS for HighThroughput
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R6094 pmt divider circuit
Hamamatsu r6094
C9321CA-02
R4110U-74
AUTOMATIC STREET LIGHT CONTROLLER using IR sensor
InGaas PIN photodiode chip back illuminated
apd raman
wafer 60g
H9656
sensor x-ray
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Avalanche photodiode APD
Abstract: G8931-03 SE-171 hamamatsu low dark current APD avalanche photodiode ingaas ghz hamamatsu avalanche photodiode ingaas ghz
Text: PHOTODIODE InGaAs APD G8931-03 2.5 Gbps operation, avalanche photodiode Features Applications l 2.5 Gbps operation l Low capacitance l Active area: φ0.03 mm l Optical fiber communications l SDH/SONET l Metro area network • General rating Parameter Active area
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G8931-03
SE-171
KAPD1011E03
Avalanche photodiode APD
G8931-03
hamamatsu low dark current APD
avalanche photodiode ingaas ghz
hamamatsu avalanche photodiode ingaas ghz
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Untitled
Abstract: No abstract text available
Text: Devlp. PHOTODIODE InGaAs APD G8931-03 2.5 Gbps operation, avalanche photodiode Features Applications l 2.5 Gbps operation l Low capacitance l Active area: φ0.03 mm • General rating Parameter Active area ■ Absolute maximum ratings Parameter Forward current
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G8931-03
SE-171
KAPD1011E03
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photodiode 1.0 Gbps 1.55
Abstract: No abstract text available
Text: Devlp. PHOTODIODE InGaAs APD with preamp G10204-54 ROSA, 1.3/1.55 µm, 10.7 Gbps Features Applications l Compatible with XMD 10 Gbps Miniature Device -MSA l High-speed response: 10 Gbps l Low power supply voltage: Vcc=3.3 V, VBR=30 V l Differential output
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G10204-54
SE-171
KAPD1017E01
photodiode 1.0 Gbps 1.55
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G10519-14
Abstract: SE-171 STM-16 photodiode 1 Gbps 1.55
Text: PHOTODIODE InGaAs APD with preamp G10519-14 ROSA, 1.3/1.55 µm, 2.7 Gbps Features Applications l High-speed response: 2.7 Gbps l High sensitivity: 27 mV/µW λ=1.55 µm, M=10 l Differential output l Wide dynamic range: -5 to -33 dBm l Optical return loss: 35 dB
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G10519-14
STM-16
SE-171
KAPD1021E02
G10519-14
photodiode 1 Gbps 1.55
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photodiode 1.0 Gbps 1.55
Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD with preamp G10519-14 ROSA, 1.3/1.55 µm, 2.7 Gbps Features Applications l High-speed response: 2.7 Gbps l High sensitivity: 27 mV/µW λ=1.55 µm, M=10 l Differential output l Wide dynamic range: -5 to -33 dBm l Optical return loss: 35 dB
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G10519-14
STM-16
SE-171
KAPD1021E03
photodiode 1.0 Gbps 1.55
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Abstract: No abstract text available
Text: PHOTODIODE InGaAs APD with preamp G9910-14 ROSA type, 1.3/1.55 µm, 2.7 Gbps Features Applications l High-speed response: 2.7 Gbps l High gain: 15 V/mW λ=1550 nm l Differential output l Responsivity: -5 to -33 dBm l Optical return loss: 35 dB l Isolation type: Housing and signal ground are
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G9910-14
SE-171
KAPD1016E01
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R7600U-300
Abstract: MOST150 S11518
Text: NEWS 02 2010 SYSTEM PRODUCTS PAGE 29 2.8M Scientific CMOS board-level camera SOLID STATE PRODUCTS PAGE 15 New InGaAs PIN photodiodes ELECTRON TUBE PRODUCTS New MCP assemblies PAGE 27 SYSTEMS PRODUCTS Quantaurus-QY PAGE 30 Highlights SOLID STATE PRODUCTS PAGE 07
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G11608
G11608-256DA
G11608-512DA
DE128228814
R7600U-300
MOST150
S11518
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Selection guide
Abstract: Infrared detectors P13243-011MA
Text: Selection guide - March 2015 Infrared Detectors Covering a broad spectral range in the infrared region INFRARED DETECTORS HAMAMATSU PHOTONICS K.K. Infrared detectors Infrared detectors are widely used in diverse field including measurement, analysis, indust r y, c o m m u n i c a t i o n , a g r i c u l tu r e , m e d i c i n e ,
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KIRD0001E08
Selection guide
Infrared detectors
P13243-011MA
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Light Detector laser
Abstract: short distance measurement ir infrared diode
Text: Opto-semiconductors Condensed Catalog HAMAMATSU PHOTONICS K.K. Our unique photonics technology delivers highly sophisticated opto-semiconductors with high-sensitivity and high-speed response. Hamamatsu Photonics has been at the cutting edge of photonics technology for 60 years. In that
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KOTH0001E15
Light Detector laser
short distance measurement ir infrared diode
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Infrared detectors
Abstract: dark detector application ,uses and working
Text: Compound semiconductor photosensors 1 InGaAs/GaAs PIN photodiodes 1-1 Characteristics 1-2 How to use 2 InGaAs APD 2-1 Operating principle 2-2 Characteristics 2-3 How to use CHAPTER 06 8 MCT HgCdTe photovoltaic detectors 8-1 Characteristics 8-2 How to use
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C10500
Abstract: linear CCD 512 TDI cmos image sensor
Text: Selection guide - Sep. 2014 Image Sensors Various types of image sensors covering a wide spectral response range for photometry HAMAMATSU PHOTONICS K.K. Image sensors Various types of image sensors covering a wide spectral response range for photometry H A M A M AT S U d e v e l o p s a n d p r o d u c e s a d vanced image sensors for measurement applications in spectral and energy ranges including infrared, visible, ultraviolet, vacuum ultraviolet, soft X-rays and hard X-rays. We provide
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KAPD0002E12
C10500
linear CCD 512
TDI cmos image sensor
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L11938
Abstract: s11850
Text: NEWS 02 2011 SOLID STATE PRODUCTS PAGE 06 High-sensitivity dual-element detectors ideal for gas analysis applications LASER PRODUCTS Mid-Infrared Quantum Cascade Lasers PAGE 18 ELECTRON TUBE PRODUCTS PAGE 23 Xenon Flash Light Source LF2 L11729, L11730 SYSTEMS PRODUCTS
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L11729,
L11730
C10910
T11262-01,
T11722-01
L12004-2190H-C,
D-82211
DE128228814
L11938
s11850
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