InGaAs photodiode array chip
Abstract: charge amplifier array G11135 Image Sensors G11135-512DE
Text: InGaAs linear image sensors G11135 series Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors consist of an InGaAs photodiode array and CMOS chip that contains a charge amplifier array, an offset compensation circuit,
|
Original
|
G11135
SE-171
KMIR1018E06
InGaAs photodiode array chip
charge amplifier array
Image Sensors
G11135-512DE
|
PDF
|
refractometer
Abstract: KMPD1099E05 SE-171 cmos IMAGE SENSOR evaluation board
Text: IMAGE SENSOR CMOS linear image sensor S10227 Small plastic package CMOS image sensor Features Applications l Compact and high cost-performance Surface mount package: 4.4 x 9.1 × 1.6 t mm l Pixel pitch: 12.5 µm Pixel height: 250 µm l Number of pixels: 512 ch
|
Original
|
S10227
SE-171
KMPD1099E05
refractometer
KMPD1099E05
cmos IMAGE SENSOR evaluation board
|
PDF
|
sta 512
Abstract: No abstract text available
Text: IMAGE SENSOR CMOS linear image sensor S10227 Small plastic package CMOS image sensor Features Applications l Compact and high cost-performance Surface mount package: 4.4 x 9.1 × 1.6 t mm l Pixel pitch: 12.5 µm Pixel height: 250 µm l Number of pixels: 512 ch
|
Original
|
S10227
SE-171
KMPD1099E02
sta 512
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CMOS linear image sensor S10227 Small plastic package CMOS image sensor Features Applications l Compact and high cost-performance Surface mount package: 4.4 x 9.1 × 1.6 t mm l Pixel pitch: 12.5 µm Pixel height: 250 µm l Number of pixels: 512 ch
|
Original
|
S10227
SE-171
KMPD1099E04
|
PDF
|
Untitled
Abstract: No abstract text available
Text: InGaAs linear image sensors G11135-256DD, G11135-512DE Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors
|
Original
|
G11135-256DD,
G11135-512DE
G11135
KMIR1018E09
|
PDF
|
cmos IMAGE SENSOR evaluation board
Abstract: sta 512
Text: IMAGE SENSOR CMOS linear image sensor S10227 Small plastic package CMOS image sensor Features Applications l Compact and high cost-performance Surface mount package: 4.4 x 9.1 × 1.6 t mm l Pixel pitch: 12.5 µm Pixel height: 250 µm l Number of pixels: 512 ch
|
Original
|
S10227
SE-171
KMPD1099E03
cmos IMAGE SENSOR evaluation board
sta 512
|
PDF
|
Untitled
Abstract: No abstract text available
Text: InGaAs linear image sensors G11135-256DD, G11135-512DE Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors
|
Original
|
G11135-256DD,
G11135-512DE
G11135
operatio53
B1201,
KMIR1018E11
|
PDF
|
photodiode linear array 256
Abstract: No abstract text available
Text: InGaAs linear image sensors G11135-256DD, G11135-512DE Single video line 256/512 pixels near infrared image sensor (0.95 to 1.7 m) The G11135 series InGaAs linear image sensors designed for foreign object inspection equipment. These linear image sensors
|
Original
|
G11135-256DD,
G11135-512DE
G11135
KMIR1018E10
photodiode linear array 256
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CCD area image sensors S7170-0909 S7171-0909 512 x 512 pixels, back-thinned FFT-CCD HAMAMATSU developed MPP multi-pinned phase mode back-thinned FFT-CCDs S7170-0909, S7171-0909 specifically designed for low-light-level detection in scientific applications. The S7170-0909, S7171-0909 have sensitivity from the UV to near-IR as well
|
Original
|
S7170-0909
S7171-0909
S7170-0909,
S7171-0909
S7171-0909,
S7172-0909)
SE-171
KMPD1028E07
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and
|
Original
|
S8844-0909
S8844-0909
SE-171
KMPD1056E01
|
PDF
|
ccd 512 x 512
Abstract: hamamatsu number of pixels 512 x 512
Text: CCD area image sensors S7170-0909 S7171-0909 512 x 512 pixels, back-thinned FFT-CCD HAMAMATSU developed MPP multi-pinned phase mode back-thinned FFT-CCDs S7170-0909, S7171-0909 specifically designed for low-light-level detection in scientific applications. The S7170-0909, S7171-0909 have sensitivity from the UV to near-IR as well
|
Original
|
S7170-0909
S7171-0909
S7170-0909,
S7171-0909
S7171-0909,
S7172-0909)
SE-171
KMPD1028E08
ccd 512 x 512
hamamatsu number of pixels 512 x 512
|
PDF
|
Untitled
Abstract: No abstract text available
Text: CCD area image sensors S7170-0909 S7171-0909-01 512 x 512 pixels, back-thinned FFT-CCD HAMAMATSU developed MPP multi-pinned phase mode back-thinned FFT-CCDs S7170-0909, S7171-0909-01 specifically designed for low-light-level detection in scientific applications. The S7170-0909, S7171-0909-01 have sensitivity from the
|
Original
|
S7170-0909
S7171-0909-01
S7170-0909,
S7171-0909-01
S7171-0909-01,
S7172-0909)
KMPD1028E11
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Cooled InGaAs camera C10633-34 FEATURES High sensitivity in near-infrared region 900 nm to 1520 nm High resolution: 640 x 512 pixels Low-dark current with -70 : peltier cooling Maintenance-free by hermetic vacuum-sealed head Non-destructive readout feature (see below.)
|
Original
|
C10633-34
C10633-34
B1201
SCAS0074E03
MAR/2015
|
PDF
|
S7171-0909
Abstract: S8844-0909
Text: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and
|
Original
|
S8844-0909
S8844-0909
SE-171
KMPD1056E02
S7171-0909
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and
|
Original
|
S8844-0909
S8844-0909
SE-171
KMPD1056E03
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and
|
Original
|
S8844-0909
S8844-0909
SE-171
KMPD1056E04
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S8844-0909 512 x 512 pixels, Back-thinned FFT-CCD S8844-0909 is an FFT-CCD area image sensor developed for measurement of low-light-level. S8844-0909 has a back-thinned structure for detecting light from the backside that allows high sensitivity from UV to near infrared region. S8844-0909 also delivers a wide dynamic range and
|
Original
|
S8844-0909
S8844-0909
SE-171
KMPD1056E02
|
PDF
|
C7181
Abstract: S7170-0909N
Text: CCD area image sensors S7170-0909 S7171-0909-01 512 x 512 pixels, back-thinned FFT-CCD HAMAMATSU developed MPP multi-pinned phase mode back-thinned FFT-CCDs S7170-0909, S7171-0909-01 specifically designed for low-light-level detection in scientific applications. The S7170-0909, S7171-0909-01 have sensitivity from the UV to
|
Original
|
S7170-0909
S7171-0909-01
S7170-0909,
S7171-0909-01
S7171-0909-01,
S7172-0909)
SE-171
KMPD1028E09
C7181
S7170-0909N
|
PDF
|
ccd 512 x 512
Abstract: No abstract text available
Text: CCD area image sensors S7170-0909 S7171-0909-01 512 x 512 pixels, back-thinned FFT-CCD HAMAMATSU developed MPP multi-pinned phase mode back-thinned FFT-CCDs S7170-0909, S7171-0909-01 speci¿cally designed for low-light-level detection in scienti¿c applications. The S7170-0909, S7171-0909-01 have sensitivity from the
|
Original
|
S7170-0909
S7171-0909-01
S7170-0909,
S7171-0909-01
S7171-0909-01,
S7172-0909)
SE-171
KMPD1028E10
ccd 512 x 512
|
PDF
|
Untitled
Abstract: No abstract text available
Text: InGaAs linear image sensors G9494-256D/-512D Near infrared image sensors 0.9 to 1.7 m with high-speed data rate Hamamatsu provides high-speed, near infrared image sensors designed for detectors used in on-line foreign object inspection equipment. These image sensors use square-shaped pixels that are ideally suited for software processing in
|
Original
|
G9494-256D/-512D
B1201,
KMIR1014E08
|
PDF
|
CCD LINEAR SENSOR 512
Abstract: C7182 C7180 C7181 C7557 S7170-0909 S7171-0909 linear CCD 512
Text: IMAGE SENSOR CCD multichannel detector head C7180, C7181 Detector head for back-thinned CCD area image sensor C7180 and C7181 are high-sensitivity multichannel detector heads designed for 512 x 512 pixel, back-thinned FFT-CCD area image sensors S7170-0909, S7171-0909 . C7180 works with non-cooled type back-thinned CCD area image sensor (S7170-0909) and C7181 with one-stage
|
Original
|
C7180,
C7181
C7180
C7181
S7170-0909,
S7171-0909)
S7170-0909)
CCD LINEAR SENSOR 512
C7182
C7557
S7170-0909
S7171-0909
linear CCD 512
|
PDF
|
S1023
Abstract: S1024 S7019-1009 CSGA
Text: NEW IMAGE SENSOR CCD area image sensor S7019-1009 1024 x 512 pixels, front-illuminated FT-CCD S7019-1009 is a FT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular, this image sensor is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy.
|
Original
|
S7019-1009
S7019-1009
SE-171
KMPD1033E02
S1023
S1024
CSGA
|
PDF
|
CSGA
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7019-1009 1024 x 512 pixels, front-illuminated FT-CCD S7019-1009 is a FT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular, this image sensor is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy.
|
Original
|
S7019-1009
S7019-1009
SE-171
KMPD1033E02
CSGA
|
PDF
|
CSGA
Abstract: No abstract text available
Text: IMAGE SENSOR CCD area image sensor S7019-1009 1024 x 512 pixels, front-illuminated FT-CCD S7019-1009 is a FT-CCD area image sensor specifically designed for low-light-level detection in scientific applications. In particular, this image sensor is ideally suited for extremely low-light-level detection in such fields as spectroscopy and astronomy.
|
Original
|
S7019-1009
S7019-1009
SE-171
KMPD1033E03
CSGA
|
PDF
|
