flash hamming ecc
Abstract: hamming code 512 bytes SLC nand hamming code 512 bytes hamming hamming code 7 bit hamming code micron ecc nand
Text: TN-29-08: Hamming Codes for NAND Flash Memory Devices Overview Technical Note Hamming Codes for NAND Flash Memory Devices For the latest NAND Flash product data sheets, see www.micron.com/products/nand/partlist.aspx. Overview NAND Flash memory products have become the technology of choice to satisfy highdensity, nonvolatile memory requirements in many applications. NAND Flash technology provides large amounts of storage at a price point lower than any of today's semiconductor alternatives. NAND Flash development has focused on low cost per bit,
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TN-29-08:
09005aef819bc571
09005aef819bc51c
tn2908
flash hamming ecc
hamming code 512 bytes
SLC nand hamming code 512 bytes
hamming
hamming code
7 bit hamming code
micron ecc nand
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E160
Abstract: E193 MC10193 SY100E193 SY10E193 SECDED
Text: SY10E193 SY100E193 FINAL ERROR DETECTION/ CORRECTION CIRCUIT FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E193 are error detection and correction EDAC circuits designed for use in new, high- performance
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SY10E193
SY100E193
SY10/100E193
MC10193.
12-bit
SY100E193JC
J28-1
SY100E193JCTR
E160
E193
MC10193
SY100E193
SY10E193
SECDED
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E160
Abstract: E193 MC10193 SY100E193 SY10E193
Text: Micrel, Inc. SY10E193 SY100E193 SY10E193 ERROR DETECTION/ CORRECTION CIRCUIT FEATURES SY100E193 DESCRIPTION • Hamming code generation ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E193 are error detection and correction EDAC circuits designed for use in new, high- performance
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SY10E193
SY100E193
SY10/100E193
MC10193.
M9999-032006
E160
E193
MC10193
SY100E193
SY10E193
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SECDED
Abstract: E160 E193 MC10193 SY100E193 SY10E193
Text: ERROR DETECTION/ CORRECTION CIRCUIT FEATURES SY10E193 SY100E193 DESCRIPTION • Hamming code generation ■ Extended 100E VEE range of –4.2V to –5.5V The SY10/100E193 are error detection and correction EDAC circuits designed for use in new, high- performance
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SY10E193
SY100E193
SY10/100E193
MC10193.
12-bit
SY100E193JC
J28-1
SY100E193JCTR
SECDED
E160
E193
MC10193
SY100E193
SY10E193
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DL140
Abstract: E160 MC100E193 MC10E193
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Error Detection/Correction MC10E193 Circuit MC100E193 The MC10E/100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives
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MC10E193
MC100E193
MC10E/100E193
12-bit
MC10E193/D*
MC10E193/D
DL140
E160
MC100E193
MC10E193
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7 bit hamming code
Abstract: hamming encoding hamming encoder AN1221 HC05 HC08 HC08 c code example AN-1221 HC08 code example IASM08
Text: Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR APPLICATION NOTE Order this document by AN1221/D AN1221 Hamming Error Control Coding Techniques with the HC08 MCU by Mark McQuilken & Mark Glenewinkel CSIC Applications Freescale Semiconductor, Inc. INTRODUCTION
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AN1221/D
AN1221
7 bit hamming code
hamming encoding
hamming encoder
AN1221
HC05
HC08
HC08 c code example
AN-1221
HC08 code example
IASM08
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54HSC630
Abstract: No abstract text available
Text: THIS DOCUMENT IS FOR MAINTENANCE PURPOSES ONLY AND IS NOT RECOMMENDED FOR NEW DESIGNS 54HSC/T630 APRIL 1995 DS3595-3.4 54HSC/T630 RADIATION HARD 16-BIT PARALLEL ERROR DETECTION & CORRECTION The 54HSC/T630 is a 16-bit parallel Error Detection and Correction circuit. It uses a modified Hamming code to
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54HSC/T630
DS3595-3
16-BIT
54HSC/T630
22-bit
54HSC630
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Untitled
Abstract: No abstract text available
Text: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • ■ ■ ■ ■ ■ Hamming code generation 8-bit wide Expandable for more width Provides parity register ESD protection of 2000V Fully compatible with industry standard 10KH,
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lnternal75Ki2
MC10E/100E193
SY10E193
SY100E193
pa850
SY10E193JC
J28-1
SY100E193JC
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XTD22
Abstract: No abstract text available
Text: AT&T Microelectronics Product Specification Sheet 1042BL initial Use 5ESS EDC32 Description The 1042BL EDC32 performs error detection and correction on a 32-bit data word using seven bits of correction code. The correction code generated by the device is a modified Hamming
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1042BL
EDC32
1042BL
EDC32
32-bit
am29c660
68-pin
XTD22
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hamming code
Abstract: "hamming code" 4 bit hamming code BU-203
Text: AmZ8160 Cascadable 16-Bit Error Detection and Correction Unit ADVANCED DATA DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • Modified Hamming Code Detects multiple errors and corrects single bit errors in a parallel data word. Ideal for use in dynamic memory
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16-Bit
AmZ8160
AmZ8000
Z8000
Am2960
hamming code
"hamming code"
4 bit hamming code
BU-203
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Untitled
Abstract: No abstract text available
Text: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SY10E193 SY100E193 SEMICONDUCTOR FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully compatible with industry standard 10KH,
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SY10E193
SY100E193
lnternal75KÂ
MC10E/100E193
28-pin
SY10/100E193
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Error Detection/Correction Circuit MC10E193 MC100E193 The MC10E/100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives
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MC10E193
MC100E193
MC10E/100E193
12-bit
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Z8000
Abstract: "hamming code"
Text: Am2960 Cascadable 16-Bit Error Detection and Correction Unit ADVANCED DATA DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • Modified Hamming Code Detects multiple errors and corrects single bit errors in a parallel data word. Ideal for use in dynam ic memory
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Am2960
16-Bit
Am2960s
32-bit
64-bit
Z8000
"hamming code"
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Error Detection/Correction Circuit MC10E193 MC100E193 The MC10E/100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives the parity of the
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MC10E193
MC100E193
MC10E/100E193
MC10193,
expan1100
DL140
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Error Detection/Correction Circuit MC10E193 MC100E193 The MC10E/100E193 is an error detection and correction EDAC circuit. Modified Hamming parity codes are generated on an 8-bit word according to the pattern shown in the logic symbol. The P5 output gives
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MC10E193
MC100E193
MC10E/100E193
12-bit
DL140
b3b7252
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Untitled
Abstract: No abstract text available
Text: Work? Error-correcting codes sums to 0. Thus, calculating the checkbits as shown in Fig Many types of error-correcting techniques exist, but in data ure 1, the data word D15-D„) 0011 1101 1001 1001 yields communications, Hamming encoding probably finds the
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16-bit
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Untitled
Abstract: No abstract text available
Text: ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SY10E193 SY100E193 SEMICONDUCTOR DESCRIPTION FEATURES • Hamming code generation ■ Extended 100E V ee range of -4 .2 V to -5 .5 V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully com patible with industry standard 10KH,
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SY10E193
SY100E193
lnternal75KÂ
C10E/100E193
10/100E
SY10E193JC
J28-1
SY10E193JCTR
SY100E193JC
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Untitled
Abstract: No abstract text available
Text: * ERR OR DETECTION/ C O RR ECT IO N CIRCUIT SYNERGY SEMICONDUCTOR FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully compatible with industry standard 10KH,
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SY10E193
SY100E193
lnternal75KD
MC10E/100E193
28-pin
SY10/100E193
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Untitled
Abstract: No abstract text available
Text: * ERROR DETECTION/ CORRECTIVE CIRCUIT SYNERG Y SEMICONDUCTOR |Y100E193 O i l U 1 1 1 y%3 D ESCRIPTIO N FEATURES The SY10E/100E/101E193 is an errordetection and correction EDAC circuit designed for use in new, high performance ECL systems. The E193 generates hamming parity codes on an 8 -bit
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Y100E193
SY10E/100E/101E193
10KH00
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MD0205
Abstract: ims c012 CD05 CD07 CD10 CD12 MB1426 MD03 CD00 cd06
Text: FU JITSU 16 BIT ERROR CHECKING & CORRECTION DESCRIPTION The MB1426 E rror Checking and C orrection ECC device is designed to enhance memory reliability in 16-bit systems. Using a m odified Hamming SingleE rror-C orrection/D ouble-E rror-D etection (SEC/DED) code, the ECC can find
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MB1426
16-bit
64-pin
MB1426
64-Lead
PGA-64C-A01)
021DIA
MD0205
ims c012
CD05
CD07
CD10
CD12
MD03
CD00
cd06
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Untitled
Abstract: No abstract text available
Text: FU JITSU 16 BIT ERROR CHECKING & CORRECTION DESCRIPTION The MB1426 E rror Checking and C orrection ECC device is designed to enhance memory reliability in 16-bit systems. Using a m odified Hamming SingleE rror-C orrection/D ouble-E rror-D etection (SEC/DED) code, the ECC can find
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MB1426
16-bit
64-pin
64-Lead
PGA-64C-A01)
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MC10193
Abstract: E160 E193 SY100E193 SY101E193
Text: A ERROR DETECTION/ CORRECTIVE CIRCUIT SYN ERG Y e v in n F ic n 1 y 101E193 _ SEMICONDUCTOR J D E S C R IP T IO N FEATURES Hamming Code Generation. 8 - Bit Wide. Expandable for more width. Provides Parity Register. ESD Protection of 2000V.
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SY100E193:
SY101E193:
MC10E/100E193.
SY10E/100E/101E193
MC10193
E160
E193
SY100E193
SY101E193
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Untitled
Abstract: No abstract text available
Text: * ERROR DETECTION/ CORRECTION CIRCUIT SYNERGY SY10E193 SY100E193 SEMICONDUCTOR FEATURES DESCRIPTION • Hamming code generation ■ Extended 100E V ee range of -4.2V to -5.5V ■ 8-bit wide ■ Expandable for more width ■ Provides parity register ■ Fully compatible with industry standard 10KH,
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SY10E193
SY100E193
lnternal75KÂ
MC10E/100E193
28-pin
SY10/100E193
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA • • • • • • M C10E193 M C100E193 Hamming Code Generation 8-Bit Word, Expandable Provides Parity of Whole Word Scannable Parity Register Extended 100E Vgg Range of -4 .2 V to 75 k il Input Pulldown Resistors
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C10E193
C100E193
MC10E/100E193
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