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    HANDLING OF BEAM LEAD DIODES Search Results

    HANDLING OF BEAM LEAD DIODES Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DE6B3KJ151KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ471KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6E3KJ152MN4A Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ101KA4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd
    DE6B3KJ331KB4BE01J Murata Manufacturing Co Ltd Safety Standard Certified Lead Type Disc Ceramic Capacitors for Automotive Visit Murata Manufacturing Co Ltd

    HANDLING OF BEAM LEAD DIODES Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    HPND-4001

    Abstract: beam lead PIN diode diod 4001
    Text: E 3 P a c k a rd APPLICATION NOTE 979 ; ' -4 ! •{ The Handling and Bonding of Beam Lead Devices Made Easy ! INTRODUCTION 8eam lead device s are p a rtic u la rly s u ite d fo r h yb rid in te g ra te d c irc u its w here low p a ra sitica and sm a ll size


    OCR Scan     		HPND-4001 255-98CQ beam lead PIN diode diod 4001 PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 Features • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency • Polyimide Passivation Description


    Original     		HSCH-9301 HSCH-9351 HSCH-9301 HSCH-9351 5965-8852E PDF

    Untitled

    Abstract: No abstract text available
    Text: GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 Features • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency • Polyimide Passivation Description


    Original     		HSCH-9301 HSCH-9351 HSCH-9301 HSCH-9351 5965-8852E PDF

    application note 979

    Abstract: 9351 HSCH-9301 HSCH9351 HSCH-9351 ABLESTIK 71-2
    Text: GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 Features • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency • Polyimide Passivation Description


    Original     		HSCH-9301 HSCH-9351 HSCH-9301 HSCH-9351 application note 979 9351 HSCH9351 ABLESTIK 71-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: •I 4447564 Q 0 0 tlbD4 02^ ■ H P A HEIilLETT-PACKAR] / CMPNTS m,~m LIE I HEWLETT mPrM D A HKion GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 Features • Gold T ri-M etal System For Improved Reliability • Low C ap acitan ce


    OCR Scan     		HSCH-9301 HSCH-9351 HSCH-9301 HSCH-9351 PDF

    IR712

    Abstract: ABLESTIK 71-2
    Text: H EW L E T T wLTM PA CK A R D GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 Features • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency • Polyimide Passivation


    OCR Scan     		HSCH-9301 HSCH-9351 HSCH-9301 HSCH-9351 IR712 ABLESTIK 71-2 PDF

    Bridge diodes

    Abstract: No abstract text available
    Text: Whal HEWLETT iL'ttM PACKARD GaAs Beam Lead Schottky Barrier Ring and Bridge Diodes Technical Data HSCH-9301 HSCH-9351 F eatu res • Gold Tri-M etal System For Improved Reliability • Low C ap acitan ce • Low S eries R esistan ce • H igh C utoff F req u en cy


    OCR Scan     		HSCH-9301 HSCH-9351 HSCH-9351 HSCH-9301 Bridge diodes PDF

    handling of beam lead diodes

    Abstract: beam lead PIN diode ALPHA INDUSTRIES DSM6355 DSM63XX Alpha Industries pin diodes
    Text: Planar and Mesa Beam Lead PIN Diodes EIB AIpfia DSG64XX, DSM63XX Series Features Low Capacitance Low Resistance Fast Switching Oxide-Nitride Passivated Maximum Ratings Stronger, Full Frame Design High Voltage Operating Temperature: -65 to + 150 °C Storage Temperature:


    OCR Scan     		DSG64XX, DSM63XX DSM6361 DSM6361, DSM6341 DSM6355 DSM6356 handling of beam lead diodes beam lead PIN diode ALPHA INDUSTRIES Alpha Industries pin diodes PDF

    DSG6474-000

    Abstract: DSM6361-000 handling of beam lead diodes DSG6405 Alpha Industries pin diodes
    Text: Planar and Mesa Beam Lead PIN Diodes EHA lpha DSG6405-000, DSG6474-000, DSM6300 Series Features Low Capacitance Low Resistance Fast Switching Oxide-Nitride Passivated Maximum Ratings Stronger, Full Frame Design Operating Temperature: High Voltage -6 5 to + 150°C


    OCR Scan     		DSG6405-000, DSG6474-000, DSM6300 DSG6474-000 DSM6361-000 handling of beam lead diodes DSG6405 Alpha Industries pin diodes PDF

    DSG6474

    Abstract: Alpha Industries handling of beam lead diodes DSM6355 DSG6405 DSG6470-06 DSG6470-30 DSG6474-06 Design with PIN diode alpha
    Text: Planar and Mesa Beam Lead PIN Diodes DSG64XX, DSM63XX Series Features Low Capacitance Low Resistance Fast Switching Oxide-Nitride Passivated Maximum Ratings Stronger, Full Frame Design Operating Temperature: High Voltage -6 5 to + 1 5 0 °C Storage Temperature:


    OCR Scan     		DSG64XX, DSM63XX AS004L2-11 AT001D3â AK004M2-11 AS004M1-08 AT001D4-31 AK004R2-11 AS004M1-11 AT001D6-31 DSG6474 Alpha Industries handling of beam lead diodes DSM6355 DSG6405 DSG6470-06 DSG6470-30 DSG6474-06 Design with PIN diode alpha PDF

    DSG6474-000

    Abstract: DSG6405-000 DSG6474 handling of beam lead diodes Design with PIN diode alpha DSM6361 DSG6405 DSM6356 Alpha Industries pin diodes beam lead PIN diode
    Text: Planar and Mesa Beam Lead PIN Diodes DSG6405–000, DSG6474–000, DSM6300 Series Features Low Capacitance Low Resistance Fast Switching Oxide–Nitride Passivated Maximum Ratings Stronger, Full Frame Design High Voltage Operating Temperature: –65 to + 150°C


    Original     		DSG6405 DSG6474 DSM6300 DSG6474-000 DSG6405-000 handling of beam lead diodes Design with PIN diode alpha DSM6361 DSM6356 Alpha Industries pin diodes beam lead PIN diode PDF

    MA4E2037

    Abstract: MA4E2039 M541 MA4E2040
    Text: GaAs Beam Lead Schottky Barrier Diodes MA4E2037, MA4E2039, MA4E2040 MA4E2037, MA4E2039, MA4E2040 GaAs Beam Lead Schottky Barrier Diodes Features • • • • • Package Outlines Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation


    Original     		MA4E2037, MA4E2039, MA4E2040 MA4E2037 MA4E2037 MA4E2039 MA4E2040 M541 PDF

    HSCH-8201

    Abstract: schottky diodes Anti parallel HSCH9201
    Text: fh p \ HEWLETT mi'HM PACKARD GaAs Beam Lead Schottky Barrier Diodes Technical Data HSCH-9101 HSCH-9201 HSCH-9251 Features • Gold Tri-Metal System For Improved Reliability • Low Capacitance • Low Series Resistance • High Cutoff Frequency • Polyimide Passivation


    OCR Scan     		HSCH-9101 HSCH-9201 HSCH-9251 HSCH-9101 HSCH-9201, HSCH-9251. HSCH-8201 schottky diodes Anti parallel HSCH9201 PDF

    HPND-4028 pin diode

    Abstract: No abstract text available
    Text: Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4028 HPND-4038 690 27 650 (26) Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0 nsec 330 (13) 260 (10) 220 (9) 180 (7) 180 (7) 160 (6)


    Original     		HPND-4028 HPND-4038 5965-8878E 5967-6157E HPND-4028 pin diode PDF

    HPND-4028 pin diode

    Abstract: hpnd pin 0.01 pF
    Text: Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4028 HPND-4038 690 27 650 (26) Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0 nsec 330 (13) 260 (10) 220 (9) 180 (7) 180 (7) 160 (6)


    Original     		HPND-4028 HPND-4038 5965-8878E 5967-6157E HPND-4028 pin diode hpnd pin 0.01 pF PDF

    HPND-4028 pin diode

    Abstract: hpnd pin 0.01 pF HPND-4028 ultrasonic phased array HPND4028 HPND4038 HPND-4038 4028 BE
    Text: Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4028 HPND-4038 690 27 650 (26) Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0 nsec 330 (13) 260 (10) 220 (9) 180 (7) 180 (7) 160 (6)


    Original     		HPND-4028 HPND-4038 HPND-4028 5965-8878E 5967-6157E HPND-4028 pin diode hpnd pin 0.01 pF ultrasonic phased array HPND4028 HPND4038 HPND-4038 4028 BE PDF

    MA4E2037

    Abstract: MA4E2038 MA4E2039 M541 MA4E2040 millimeter wave radar
    Text: MA4E2037, MA4E2038, MA4E2039, MA4E2040 GaAs Beam Lead Schottky Diodes Features • • • • • Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations Rev. V3 MA4E2037, MA4E2038 Description and Applications


    Original     		MA4E2037, MA4E2038, MA4E2039, MA4E2040 MA4E2038 MA4E2037 MA4E2038 MA4E2039 MA4E2040 M541 millimeter wave radar PDF

    MA4E2037

    Abstract: MA4E2039 M541 MA4E2040
    Text: MA4E2037, MA4E2039,MA4E2040 GaAs Beam Lead Schottky Diodes Features • • • • • Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation Multiple Configurations Rev. V2 MA4E2037 Description and Applications M/A-Com’s MA4E2037 single, MA4E2039 anti-parallel


    Original     		MA4E2037, MA4E2039 MA4E2040 MA4E2037 MA4E2037 MA4E2040 M541 PDF

    L346

    Abstract: No abstract text available
    Text: • M4 M7 S ö 4 GODTbOl HEWLETT-PACKARD/ 31T «HPA C MP NTS f X - « HEW LETT blE D PACKARD GaAs Beam Lead Schottky Barrier Diodes Technical Data HSCH-9101 HSCH-9201 HSCH-9251 Features • Gold Tri-M etal System For Improved Reliability • Low C apacitance


    OCR Scan     		HSCH-9101 HSCH-9201 HSCH-9251 HSCH-9101 HSCH-9201 HSCH-9251 HSCH-9201, HSCH-9251. L346 PDF

    DSG6405-000

    Abstract: PIN diode DSG6474-000 DSG6474-000 DSM6361-000 diode led ir DSM6361 led diode DSG6474 DSM6356 DSM6380-000
    Text: EDAlpha Planar and Mesa Beam Lead PIN Diodes DSG6405-000, DSG6474-000, DSM6300 Series Features Low C apacitance Low Resistance Fast Switching O xid e -N itrid e Passivated Maximum Ratings Stronger, Full Frame Design - 6 5 to + 150°C Operating Temperature:


    OCR Scan     		DSG6405-000, DSG6474-000, DSM6300 0002vP- 003VP DSG6405-000 PIN diode DSG6474-000 DSG6474-000 DSM6361-000 diode led ir DSM6361 led diode DSG6474 DSM6356 DSM6380-000 PDF

    Untitled

    Abstract: No abstract text available
    Text: W hpl H EW LETT mUHM P A C K A R D Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND 4028 HPND 4038 Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0 nsec • Low R esistance at Low Bias


    OCR Scan     		HPND-4028 PDF

    HPND-4018

    Abstract: s-parameter s11 s12 s21 10000 s-parameter s11 s12 s21 ablestik 958 beam lead PIN diode hp 4028 ultrasonic phased array ultrasonic welding HPND-4028 HPND-4038
    Text: Beam Lead PIN Diodes for Phased Arrays and Switches Technical Data HPND-4018 HPND-4028 HPND-4038 690 27 650 (26) Features • Low Capacitance 0.025 pF Maximum at 1 MHz Guaranteed Min./Max. • Fast Switching 2.0 nsec 330 (13) 260 (10) 220 (9) 180 (7) 180 (7)


    Original     		HPND-4018 HPND-4028 HPND-4038 HPND-4018, HPND-4018 s-parameter s11 s12 s21 10000 s-parameter s11 s12 s21 ablestik 958 beam lead PIN diode hp 4028 ultrasonic phased array ultrasonic welding HPND-4028 HPND-4038 PDF

    Untitled

    Abstract: No abstract text available
    Text: MA4E2037, MA4E2039, MA4E2040 M/A-COM GaAs Beam Lead Schottky Barrier Diodes RF & Micrawas/e Products Features Package Outlines • • • • • MA4E2037 Low Series Resistance Low Capacitance High Cut-Off Frequency Silicon Nitride Passivation M ultiple Configurations


    OCR Scan     		MA4E2037, MA4E2039, MA4E2040 MA4E2037 MA4E2037 A4E2039 MA4E2040 PDF

    MA4E2502L

    Abstract: 50E-01
    Text: MA4E2502L SurMount Surface Mount Chip Monolithic Low Barrier Schottky Diodes Preliminary Features n n n n n n n n Case Style1, 2 Reliable, Multi-layer Metalization with a Diffusion Barrier, 100% Stabilization Bake 300°C, 16 hours Lower Susceptibility to ESD Damage


    Original     		MA4E2502L 56E-08 95E-15 37E-02 76E-14 0E-01 00E-05 50E-01 PDF