Si8421A
Abstract: Si8420B Si8421B Si8410B Si8410 Si8420 Si8421 VDE0884 SI8420-B-IS Si8420-B
Text: Si8410/20/21 S INGLE A N D D UAL -C HANNEL D IGITAL I SOLATORS Features High-speed operation Pin Assignments 2500 VRMS isolation DC – 150 Mbps Narrow Body SOIC Transient Immunity Low propagation delay >25 kV/µs <10 ns DC correct No start-up initialization required
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Si8410/20/21
Si841x
Si842x
Si8421A
Si8420B
Si8421B
Si8410B
Si8410
Si8420
Si8421
VDE0884
SI8420-B-IS
Si8420-B
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Si8420
Abstract: Si8410 Si8421 VDE0884 SI8410-C-IS
Text: Si8410/20/21 S INGLE & D UAL - C HANNEL D IGITAL I SOLATORS Features High-speed operation Pin Assignments 2500 VRMS isolation DC – 150 Mbps Narrow Body SOIC Transient Immunity Low propagation delay >25 kV/µs <10 ns DC correct No start-up initialization required
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Original
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Si8410/20/21
Si841x
Si842x
Si8420
Si8410
Si8421
VDE0884
SI8410-C-IS
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Si8400
Abstract: SOIC127P600X173-8N AN375 SOIC-16 VDE0884 Si8400AA-A-IS SI8405AA-B-IS1
Text: Si840x B IDIRECTIONAL I 2 C I SOLA TORS WITH U NIDIRECTIONAL D IGITA L C HANNELS Features Independent, bidirectional SDA and SCL isolation hannels Open drain outputs with 35 mA sink current 60-year life at rated working voltage High electromagnetic immunity
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Si840x
60-year
Si8405)
SOIC-16
Si8400
SOIC127P600X173-8N
AN375
VDE0884
Si8400AA-A-IS
SI8405AA-B-IS1
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IRFD 110
Abstract: IRFD 640
Text: Tem ic IRFDllO N-hannel Enhancement-Mode Transistor Product Summaiy V BR DSS (V) r DS(on) (Œ ) 100 0.60 4-P in D IP G Œ s tr Id (A) 1.0 U a <Jt Top View Ô s N -C hannel M O S F E T Absolute Maximum Ratings (T^ = 25°C Unless Otherwise Noted)
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P-36735--
IRFD 110
IRFD 640
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Untitled
Abstract: No abstract text available
Text: Tem ic DG534A/538A S e m i c o n d u c t o r s 4-/8-hannel Wideband Video Multiplexers Features Benefits Applications • • W ide B andw idth: 500 M H z • Im proved S ystem B andw idth • Very Low C rosstalk: - 9 7 dB @ 5 M H z • Im proved C hannel O ff-Isolation
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DG534A/538A
DG534A
P-32167--Rev.
15-Nov-93
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2N7080
Abstract: No abstract text available
Text: Tem ic 2N7080 Siliconix P-hannel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) ( ß ) I d (A) -2 0 0 0.500 - 9 .5 T O -2 5 4 A A S H erm etic Package 9 O C ase Isolated O u uu D D S G Top View P-C hannel M O S F E T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted)
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2N7080
P-37012--
2N7080
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irfd9120
Abstract: IRFD9123 IRFD9123 Siliconix
Text: Tem ic IRFD9120/9123 Siliconix P-hannel Enhancement-Mode Transistors Product Summary P a rt N um ber V BR DSS (V) r DS(on) ( ß ) I d (A) IRFD9120 -100 0.60 - 1 .0 IRFD9123 -6 0 0.80 -0.8 S o 4-Pin DIP G 0 - 1|— HE • u Top View D D P-C hannel M O S F E T
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IRFD9120/9123
IRFD9120
IRFD9123
IRFD9120
F-36852--
1100M
P-36852--
IRFD9123
IRFD9123 Siliconix
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PDF
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Untitled
Abstract: No abstract text available
Text: D /A Converter for Industries Instruments Part Number Bit Speed MSPS PD (mW) C X 2020IA -1/-2/-3 10/9/8 160 420 CX20202A-1/-2/-3 Functions Page ECL In p u t, 1 C hannel 325-337 10/9/8 160 420 ECL In p u t, 1 C hannel 325-337 C X AI156A Q 8 400 1300 ECL In p u t, 3 C hannel
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2020IA
CX20202A-1/-2/-3
AI156A
AI236Q
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SMW20P10
Abstract: sm 6136 b NS8060 4560D
Text: Temic SMW20P10 Siliconix P-hannel Enhancement-Mode Transistor Product Summary V BR DSS (V) rDS(on) ( ß ) I d (A) -1 0 0 0.20 -2 0 TO-247AD G D S l o p View P-C hannel M O S F E T Absolute Maximum Ratings (Tc = 25 °C Unless Otherwise Noted) Sym bol L im it
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SMW20P10
O-247AD
P-35259--
SMW20P10
sm 6136 b
NS8060
4560D
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13-VDA
Abstract: No abstract text available
Text: C irv A v i^ iCorportboo a J▼ v SP8542/SP8544 w SIGNAL PROCESSIN G EXCELLENCE Two a n d F ou r C hannel 12-B it M u ltiplexed Sam pling A D C s • Two or Four hannel Input Mux ■ 12 Bit Resolution ■ Single +5Volt Supply ■ Internal 1.25 Volt Reference
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SP8542/SP8544
SP8542
SP8544
12-Bit
18-pin
13-VDA
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PDF
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Untitled
Abstract: No abstract text available
Text: _SÌ6801DQ V1SHAY Siliconix ▼ N- and P-Ch, Reduced Qg, Fast Switching MOSFET ACv > r PR O D U C T S U M M A R Y v „ s V N -C hannel r d s (ON) (q ) l D (A) 0 .1 6 0 @ V GS = 4 .5 V ± 1 .9 0 .2 6 0 @ V GS = 3 .0 V ± 1 .5
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6801DQ
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2SK545
Abstract: 1789B ict7
Text: I Ordering number: ENI789B 2SK545 N 0.1789B N -C hannel Jun ction S ilicon FET SANYO- i Impedance Converter Applications A p p lica tio n s •Im pedance converter applications. • Infrared sensor. F eatu res • S m a ll I q s s • S m a ll C iss. • U ltracom p act package perm ittin g 2SK 545-applied sets to be com pact.
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ENI789B
1789B
2SK545
2SK545-applied
-10MA
ict7
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2SJ103
Abstract: 2SK246 IDSS -14mA
Text: 2SJ103 TO S H IB A TO SHIBA FIELD EFFECT TRANSISTOR SILICON P C HANN EL JUNCTION TYPE 2 S J 1 03 Unit in mm FOR A U D IO AMPLIFIER, A N A LO G SW ITCH, CONSTANT CURRENT A N D IM PEDANCE CONVERTER APPLICATIONS . 5.1 M A X . High Breakdown Voltage :V jDg = 50V
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2SJ103
2SK246
2SJ103
2SK246
IDSS -14mA
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EN5077
Abstract: 2SJ421 3tf5 TA-51
Text: Ordering number :E N 5077 2SJ421 No.5077 P-C hannel Silicon MOSFET Very High-Speed Switching Applications F e a tu re s •Low ON resistance. • Very high-speed switching. • 4V drive. A b s o lu te M axim um R a tin g s a tT a = 25°C Drain-to-Source Voltage
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EN5077
2SJ421
3tf5
TA-51
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frequency division multiplexing circuit diagram
Abstract: TDA1005 TDA1005A 19 khz fm stereo decoder circuit CQY54 stereo multiplex decoder tda 1005a stereo TDA1005AT vBC547 TDA1005A/1005AT
Text: TDA1005A TDA1005AT FREQUENCY MULTIPLEX PLL STEREO DECODER T h e T D A 1 0 0 5 A isa h igh q u a lity P L L stereo d eco d e r based on th e fre q u e n c y -d iv is io n m u ltip le x f.d .m . p rin c ip le , p e rfo rm in g : — e x c e lle n t A C I (A d ja c e n t C hannel In te rfe re n c e ) a nd S C A (S to re ca st) re je c tio n
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TDA1005A
TDA1005AT
TheTDA1005A
Vg-16
frequency division multiplexing circuit diagram
TDA1005
TDA1005A
19 khz fm stereo decoder circuit
CQY54
stereo multiplex decoder
tda 1005a stereo
TDA1005AT
vBC547
TDA1005A/1005AT
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PDF
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hssdc - db9
Abstract: No abstract text available
Text: Catalog 1 3 0 7 5 1 5 Is s u e d 9 -9 9 G ig a b it Ethe rnet and Fib re C hannel C a b le A s s e m b lie s IEEE 802.3Z and NCITST11 Product Facts • Fully shielded intercon nect for high speed data transfer ■ IEEE 802.3Z Gigabit Ethernet , NCITS T11 (FC)
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NCITST11
hssdc - db9
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Untitled
Abstract: No abstract text available
Text: IL74 DUAL HANNEL ILD74 QUAD HANNEL ILQ74 SINGLE HANNEL Infineon technologies Phototransistor Optocoupler FEATURES • 7400 Series T2L Com patible Dimensions in inches mm S ing le C hannel • Transfer Ratio, 35% Typical • Coupling Capacitance, 0.5 pF
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ILD74
ILQ74
E52744
-X001
Incl-4363
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PDF
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Untitled
Abstract: No abstract text available
Text: AV9107C-19 AV9107C-20 Advance Information Integrated Circuit n r r m ij j Systems, Inc. Frequency Generator for Fibre C hannel Systems General Description Features The AV9107C-19 and AV9107C-20 are high-speed clock gen erators designed to support fibre hannel system requirements.
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AV9107C-19
AV9107C-20
AV9107C-19
AV9107C-20
100ps.
AV9107C-19CS08
AV9107C-20CS08
DQD2CI72
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PDF
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S01Cb
Abstract: Si9750 Si9750CY
Text: T em ic SÌ9750 S e m i c o n d u c t o r s In-Rush Current Limit MOSFET Driver Features • 2.9- to 13-V Input O perating Range • M icroprocessor R E S E T • • Integrated H igh-S ide D river fo r N -C hannel M O SFET Program m able di/dt C urrent Description
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Si9750
S-51157â
27-Jan-97
A2S473S
0021t
A2S4735
a021bbl
S01Cb
Si9750CY
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PDF
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MMBFJ174
Abstract: P1087 MMBF5115 2N5019 J176 2N5018 2N5115 2N5116 J174 MMBF5114
Text: bflE D N ATL tSD1130 003^501 TDS • NSCS SE„ IC0N] JIS C r e t e ) P C hannel Vp@VDSlD RoS(on) ( a ) @ iD bvgss Device (V) (V) Min Min Ciss (PF) Max Crss (PF) Max ton (ns) Max toff (ns) Max Package (V) (nA) Min (mA) 10 -1 5 1000 75 1 45 10 35 65 T 0 -18(11)
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2N5018
2N5019
MMBF5114
O-236*
2N5115
MMBF5115
2N5116
MMBF5116
MMBFJ174
P1087
J176
J174
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PDF
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3SK305
Abstract: 3SK301
Text: Panasonic H ig h F r e q u e n c y FE T s 3SK301 Tentative , 3SK305(Tentative) Silicon N -C hannel MOS 3SK301 F o rV H F amplification U n it : m m • Features • Though low voltage operation, performance is equivalent to the con ventional product. EE
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3SK301
3SK305
200MHz
3SK301
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PDF
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GT10J301
Abstract: h0320
Text: TOSHIBA GT10J301 TO SHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N C HANN EL IGBT G T 1 0J301 HIGH POWER SW ITCHING APPLICATIONS M O TO R CONTROL APPLICATIONS The 3rd Generation. Enhancement-Mode. High Speed. : tf^O.SO/^s Max. Low Saturation Voltage. : V c e ( s a t ) “ ^ . 7 V (Max.)
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GT10J301
GT10J301
h0320
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PDF
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2SK2314
Abstract: 2-10P1B
Text: TO SHIBA 2SK2314 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE L2-? r-M O S V 2SK2314 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE 10.3MAX. APPLICATIONS
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2SK2314
428/iH,
2SK2314
2-10P1B
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2SK2417
Abstract: transistor marking 75s
Text: TOSHIBA 2SK2417 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N C HANN EL MOS TYPE tt-M O S V 2SK2417 INDUSTRIAL APPLICATIONS U nit in mm HIGH SPEED, HIGH CURRENT SW ITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER A N D M O TO R DRIVE APPLICATIONS 10 ±0.3
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2SK2417
2SK2417
transistor marking 75s
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