ASTM D374
Abstract: ASTM D2240, D412 ASTM D412 ASTM d412 ASTM D2240 D2240 ASTM d792 ASTM-D-257 ASTM-D-374
Text: TG2030 Ultra Soft Thermal Conductive Pad Features Superior thermal conductivity Highly compressible Naturally tacky Low Shore OO hardness Low oil bleed Electrically insulating Applications Electronic components: IC - CPU - MOS LED - M/B - P/S - Heat Sink LCD-TV - Notebook PC - PC Telecom Device - Wireless Hub.etc.
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TG2030
D5470
D2240
ASTM D374
ASTM D2240, D412
ASTM D412
ASTM
d412
ASTM D2240
D2240
ASTM d792
ASTM-D-257
ASTM-D-374
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4031
Abstract: OP27RP
Text: Preliminary SEi - Radiation Hardened OP27RP Low Noise, Precision Operational Amplifier Features: • RAD-PAK technology hardened against natural space radiation • Total dose hardness typ 100 krad Si ; dependent upon orbit • Package: -8 pin RAD-PAK flat pack
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OP27RP
80nVp-p
126dB
F8-01
99Rev0
4031
OP27RP
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M83528
Abstract: WR340 flange dimensions OSD-6411A wr 2300 flange waveguide Waveguide Gaskets 20-03-3731-1212 CMR-137 WR137 gasket dimensions RG-106 wr 2300 waveguide flange
Text: CONDUCTIVE ELASTOMERS Waveguide Gaskets Waveguide Gaskets CHO-SEAL CHO-SEAL 1212 1239 SPECIFICATIONS Type Ref: MIL-G-83528 Volume Resistivity (ohm-cm, max) as supplied (without pressure-sensitive adhesive) K G 0.005 0.007 Hardness (Shore A ±5) 80 80 Specific Gravity (±0.25)
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MIL-G-83528)
M83528
WR340 flange dimensions
OSD-6411A
wr 2300 flange waveguide
Waveguide Gaskets
20-03-3731-1212
CMR-137
WR137 gasket dimensions
RG-106
wr 2300 waveguide flange
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capacitive touch screens
Abstract: capacitive touch controller IC Touch Screens optical touch controller IC MGG700BI07 MGG1010AU12 touch sensor i2c MGG1010AI06
Text: w Ne Projective Capacitive Touch Screens Product Features • G/G Glass Glass Technology • Complete Sensor Module Solution Glass Sensor with Controller • 2 Point Gesturing • Front Surface Glass Hardness 7H 5 Mosh • Position Accuracy ± 2.5mm Per Windows 7 Spec
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04x53
MGG0700BI07
MGG0700BU08
MGG700BI07
68x86
MGG0890CI07
MGG0890CU09
MGG1010AI06
capacitive touch screens
capacitive touch controller IC
Touch Screens
optical touch controller IC
MGG1010AU12
touch sensor i2c
MGG1010AI06
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Untitled
Abstract: No abstract text available
Text: OP490 Quad Low Voltage Micropower Operational Amplifier Logic Diagram One Amplifier DESCRIPTION: • RAD-PAK technology-hardened against natural space • radiation • Total dose hardness: - > 100 krad (Si), depending upon space mission • Package: - 16 pin Rad-Pak® flat package
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OP490
00V/mV
OP490
inpu10
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79LV0832
Abstract: No abstract text available
Text: 79LV0832 8 Megabit 256K x 32-Bit Low Voltage EEPROM MCM DESCRIPTION: • 256k x 32-bit EEPROM MCM • RAD-PAK radiation-hardened against natural space radiation • Total dose hardness: - >100 krad (Si) - Dependent upon orbit • Excellent Single event effects
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79LV0832
32-Bit)
32-bit
79LV0832
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honeywell hr 20
Abstract: HC1773 crystal oscillator burn-in data
Text: Military & Space Products Advance Information DUAL RATE 1773 FIBER OPTIC TRANSCEIVER HC1773 FEATURES • Fabricated with RICMOS IV Bulk CMOS 0.8 µm Process Leff = 0.65 µm • 1Mbps or 20Mbps 1773 format • Total Dose Hardness of ≥3x105 rad(SiO2)
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HC1773
20Mbps
3x105
HC1773
20Mbartment
honeywell hr 20
crystal oscillator burn-in data
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UC1843x
Abstract: transistor 2N2222 SMD configuration 25A45 PWM5031 PWM5031-7 5v to 20v pwm amplifier 40khz folded cascode current mirror op amp
Text: Standard Products PWM5031 RadHard High Speed PWM Controller www.aeroflex.com/Power August 2, 2005 y r a n i il m e r P FEATURES ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ ❑ Radiation Hardness: - Total Dose 1MRad Si - Single Event Upset (SEU) 100MeV-cm2 /mg
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PWM5031
100MeV-cm2
SCD5031
UC1843x
transistor 2N2222 SMD configuration
25A45
PWM5031-7
5v to 20v pwm amplifier 40khz
folded cascode current mirror op amp
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OP400RP
Abstract: No abstract text available
Text: Preliminary SEi - Radiation-Hardened OP400RP Quad Low-Offset, Low-Power Operational Amplifier Features: •RAD-PAK technology-hardened against natural space radiation •Total dose hardness typical >100 krad Si ; dependent upon orbit •Package: - 14 pin RAD-PAK® flat package
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OP400RP
000V/mV
F14-04
99Rev1
OP400RP
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Microcircuit, Linear, Quad Comparator
Abstract: 139RP
Text: SEi - Radiation Hardened 139RP Quad Comparators, Low Offset Voltage S c h e m a tic D ia g ra m Features: • High precision comparators • RAD-PAK technology-hardened against natural space radiation • Total dose hardness typical 100 krad Si ; dependent upon orbit
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139RP
99Rev0
F14-02
Microcircuit, Linear, Quad Comparator
139RP
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low igss
Abstract: No abstract text available
Text: PRELIMINARY MOSFET A ICO SEM 330 SCF Radiation Hardness Assurance • 400 Volt 3.0 Amp 1.0 Ω SCF 330 N-Channel Power MOSFET DESCRIPTION Semicoa’s Radiation Hardened MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications.
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10volt
MIL-STD-750,
low igss
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J24118BS-2
Abstract: J241
Text: 1 2 3 4 5 6 7 8 SPECIFICATIONS Voltage Rating: Current Rating: Material: Plating: Insulation: Insulation Resistance: Thickness: Hardness: Applicable Wire: Withstanding: Temperature Range: A B 9 AC, DC, 250V AC, DC, 3A Brass Tin 40u” min. 1.7 Max. 1000MΩ min.
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1000M
J24118BS-2
J24118BS-2
J241
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JAN-38510
Abstract: U105B
Text: Tem ic DG186/187/188 Se mi c o n d u c t o r s High-Speed Drivers with SPDT JFET Switches Features Benefits Applications • Constant On-Resistance Over Entire Analog Range • Low Leakage • Low Crosstalk • Rad Hardness • • • • • • • •
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DG186/187/188
DG186/187/188
DG186
DG187
DG188
S-52895--
16-Jun-97
25473S
JAN-38510
U105B
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n38510
Abstract: No abstract text available
Text: DG186/187/188 High-Speed Drivers with SPDT JFET Switches Features Benefits Applications • Constant On-Resistance Over Entire Analog Range • Low Leakage • Low Crosstalk • Rad Hardness • • • • • • • • • • Low Distortion Eliminates Large Signal Errors
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DG186/187/188
DG186
DG187
DG188
S-52895--
16-Jun-97
n38510
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Untitled
Abstract: No abstract text available
Text: 4551072 b3E D Honeywell ODQIQIM bS^ • H 0 N 3 HONEYldELL/S S E C Advance Information 256K X 16 RADIATION-TOLERANT SRAM HC81640 FEATURES RADIATION OTHER • Total Dose Hardness at Tactical Level • Detects and Corrects All Single and Double Bit Errors Automatically
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HC81640
1x101
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Untitled
Abstract: No abstract text available
Text: Honeyw ell HC6664 Military Products Preliminary 8K x 8 RADIATION-HARDENED ROM FEATURES OTHER RADIATION • Fabricated with RICMOS Epitaxial 1.2 jim Process • Typical 30 ns Access Time • Total Dose Hardness through 1x10 rad Si02 • Low Operating Power
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1x10u
1x109
1x101
1x108
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Untitled
Abstract: No abstract text available
Text: D b3E 4551Ö72 DDG1Q1D HONEYWELL/ S MULTICHIP MODULES Honeywell TÖ3 • H 0 N 3 S E C Preliminary 64K X 8 RADIATION-TOLERANT SRAM HC80805 FEATURES RADIATION OTHER • Total Dose Hardness through 1x10s rad Si02 • Spare Memory Chip can be Substituted On-The-Fly
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HC80805
1x10s
1x109
1x102upsets/module-day)
BADDR11
BARRD10
BDISCRI03
BDISCRI02
BDISCRI01
BADDR21
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Untitled
Abstract: No abstract text available
Text: b3E J> m 45S 1 Ö 7S GATE ARRAYS QDD1Q2G ^ 5 5 • H 0 N 3 Honeywell HONE YÜ1ELL/S S E C RICMOS SEA OF TRANSISTORS GATE ARRAY HR1060 FEATURES RADIATION HARDNESS OTHER • Total Dose Hardness of >1x106 rad Si02 • Wafers from DESC certified QML 1.2 ¡im process
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HR1060
1x106
1x109rad
1x1012rad
1x109upsets/bit-day
1x1014cnrr2
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products 128K x 8 STATIC RAM—SOI HX6228 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.7 |im Process (Lef1= 0.55 ^m) • Read/Write Cycle Times < 16 ns (Typical) <2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad(Si02)
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HX6228
1x106
1x101
1x109
32-Lead
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be 500y-in
Abstract: 308C
Text: d a t a V. s h e e t Typo: UFFY 1,5 mm2. Highly flexible stranded hookup wire Conductor plain copper, stranded Copper construction: 392x0*07 mm Core isolation: soft PVC-mlxture Diameter of core: approx. 3,50 +/- 0,15 mrrt Shore hardness: 00 H- 3 Insulating resistance:
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392x0
10ftC
be 500y-in
308C
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products HX6656 32K x 8 ROM—SOI FEATURES RADIATION OTHER • Fabricated with R IC M O S “ IV Silicon on Insulator SOI 0.75 nm Process (Leff = 0.6 |iim) • Read Cycle Times < 17 ns (Typical) < 2 5 ns (-55 to 125°C) • Total Dose Hardness through 1x106ra d(S i02)
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1x106ra
1x109
1x101
28-Lead
36-Lead
HX6656
MIL-STD-1835,
CDIP2-T28
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products 5.12 MEGABIT MEMORY MODULE RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 urn Process (L#fl = 0.6 |im) • Read/Write Cycle Times <,17 ns (Typical) <25 ns (-55 to 125°C) • Total Dose Hardness through 1x106 rad (Si02)
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HX84050
1x106
1x10s
200-Lead
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Untitled
Abstract: No abstract text available
Text: Honeywell Military & Space Products 32K x 8 STATIC RAM—SOI HX6256 FEATURES RADIATION OTHER • Fabricated with RICMOS IV Silicon on Insulator SOI 0.75 p.m Process (Leff= 0.6 p,m) • Listed On SMD#5962-95845 • Total Dose Hardness through 1x106rad(Si02)
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1x106rad
1x101
1x109
HX6256
28-Lead
GQG1711
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HR2340
Abstract: sram pull down honeywell memory sram
Text: b3E D • MSS1Ö7E 0DD1D3L, EIT ■ H 0 N 3 H O ilG y W G lI HONEYÙJELL/S S E C Preliminary RICMOS SEA OF TRANSISTORS GATE ARRAY HR2340 FEATURES RADIATION HARDNESS • Total Dose Hardness of >1x106 rad Sl02 • Dose Rate Upset Hardness > 1x103rad(Si)/sec
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1x106
1x103rad
1x1012rad
HR2340
HR2340
sram pull down
honeywell memory sram
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