HM-6514-9
Abstract: No abstract text available
Text: MbE ì> HARRIS SEMICOND SECTOR f f t H U U SEMICONDUCTOR A R R m *4305571 003^110 3 « H A S HM-6514 I S 10 24 x 4 CMOS RAM February 1992 Features Description • The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes
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HM-6514
HM-6514
HM-6514-9
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Untitled
Abstract: No abstract text available
Text: HM-6514/883 HARRIS S E M I C O N D U C T O R 1 0 2 4 x 4 CMOS RAM January 1992 Features Description • This Circuit is Processed In Accordance to Mil-Std883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HM-6514/883 is a 1024 x 4 static CMOS RAM fabri
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HM-6514/883
Mil-Std883
HM-6514/883
35mW/MHzMax.
MIL-M-38510
MIL-STD-1835,
GDIP1-T18
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Untitled
Abstract: No abstract text available
Text: HM-6514/883 HARRIS S E M I C O N D U C T O R 1 0 2 4 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HM-6514/883 is a 1024 x 4 static CMOS RAM fabri
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HM-6514/883
MIL-STD883
HM-6514/883
HM6514/883
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6514
Abstract: No abstract text available
Text: HM-6514/883 HARRIS S E M I C O N D U C T O R 10 24 x 4 CMOS RAM January 1992 Description Features • This Circuit Is Processed in Accordance to Mil-Std883 and Is Fully Conform ant Under the Provisions of Paragraph 1.2.1. • Low Power S tan db y. 125|iW Max.
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HM-6514/883
HM-6514/883
HM6514/883
MIL-M-38510
MIL-STD-1835,
GDIP1-T18
6514
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Untitled
Abstract: No abstract text available
Text: a HM-6514 HARRIS S E M I C O N D U C T O R 1 0 2 4 x 4 C M O S RAM August 1996 Description Features Low Power Standby. 125|aW Max T he H M -6 5 1 4 is a 1024 x 4 static C M O S RAM fabricated using self-aligned silicon gate technology. The device utilizes
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HM-6514
35mW/MHzMax
M302271
00hfl2b0
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74c920
Abstract: ram 6164 6116 RAM 2116 ram 2064 ram 74C929 4016 RAM 4045 RAM 6264 cmos ram 74C930
Text: Industry CMOS RAM Cross Reference h a r r is c m o s ram s DESCRIPTION AMD HARRIS FUJ ITSU EDI HIT ACHI IDT M ITSU MOT BISHI OROLA N A T IONAL NEC RCA OKI TOSH* ISA SMOS NMOS, OTHER 1K CMOS RAMs 1Kx1, 16 Pin Synchronous HM-6508 1 Kx1, 18 Pin Synchronous
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256x4,
HM-6508
HM-6518
HM-6551
HM-6561
74C929
74C930
74C920
HM-6504
74c920
ram 6164
6116 RAM
2116 ram
2064 ram
4016 RAM
4045 RAM
6264 cmos ram
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6514
Abstract: m6508 HM-6513 A3U-4 6513 HM-6505 HM-6512 HM-6514 6508 RAM a2712
Text: fW i HARRIS <ü SEM ICO N D U CTO R P R O D U C T S DIVISION HM-6514 A DIVISION OF H A R RIS CORPO RATION 1024 X 4 CM OS RAM Pinout Features T O P V IE W LOW PO W ER ST A N D B Y 250JUW M A X . L O W P O W E R O P E R A T IO N 35mW/MHz M A X . D A T A R E T E N T IO N
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HM-6514
250JiW
35mW/MHz
200nsec
HM-6514
HM-6505
M-6508
HM-6512
HM-6513,
6514
m6508
HM-6513
A3U-4
6513
HM-6505
HM-6512
6508 RAM
a2712
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6508 RAM
Abstract: 1m x 8 CMOS RAM
Text: PAGE LOW VOLTAGE DATA RETENTION . 2-2 INDUSTRY CMOS RAM CROSS R EFEREN CE. 2-3 1K CMOS RAM DATA SHEETS
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HM-6551
HM-6561
HM-6617
6508 RAM
1m x 8 CMOS RAM
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1-6514S-9
Abstract: No abstract text available
Text: H M -6514 h a r r is Ë S E M I C O N D U C T O R Ë Ë WË Ë 1 0 2 4 x 4 CMOS RAM March 1997 Features Description • Low Power Standby. 125|iW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes
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HM-6514
1-6514S-9
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mi 6514
Abstract: 6514 HM3-6514-9 6514S 24502BVA 8102402VA 8102404VA HM1-6514-9 HM1-6514B-9 HM1-6514S-9
Text: HM-6514 S em iconductor 1 0 2 4 x 4 CMOS RAM March 1997 Description Features Low Power Standby. 125^iW Max The HM-6514 is a 1024 x 4 static CMOS RAM fabricated using self-aligned silicon gate technology. The device utilizes
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HM-6514
35mW/MHz
120/200ns
HM-6514
mi 6514
6514
HM3-6514-9
6514S
24502BVA
8102402VA
8102404VA
HM1-6514-9
HM1-6514B-9
HM1-6514S-9
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6514
Abstract: HM65 6514 ram
Text: HM-6514/883 Semiconductor 1 0 2 4 x 4 CMOS RAM March 1997 Features Description • This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. The HM-6514/883 is a 1024 x 4 static CMOS RAM fabri
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HM-6514/883
HM-6514/883
100kHz
6514
HM65
6514 ram
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TEN 4623
Abstract: 6514-9 ao514 hm6514-9
Text: S E M IC O N D SECTOR TS D E | 4 3 0 2 5 7 1 ^ D 0 1 0 b T l^ |~ / T-46-23-08 H M -6 5 1 4 h a r r is 1024 x 4 CMOS RAM Pinouts Features Low Power Standby. 125|iWMax. Low Power Operation.
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M30aa
T-46-23-08
HM-6514
35mW/MHz
120/200ns
HM-6514-9.
HM-6514-8.
TEN 4623
6514-9
ao514
hm6514-9
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Untitled
Abstract: No abstract text available
Text: HARRIS H S E M I C O N D U C T O R M - 6 5 4 / 8 8 3 1 0 2 4 x 4 CM O S RAM August 1996 Features • 1 Description This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conformant Under the Provisions of Paragraph 1.2.1. • Low Power S tandby. 125^W Max
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MIL-STD883
35mW/MHz
HM-6514/883
47ki2
100kHz
00bfl
HM-6514/883
M3D2271
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hm3-6514-9
Abstract: No abstract text available
Text: H /l/7 -6 5 7 4 h a r r is È S E M I C O N D U C T O R U U W U M 1024 X 4 CM O S RAM August 1996 Features Description • Low Power S ta n d b y . 125^W Max • Low Power O p e ra tio n . 35mW /MHz Max
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HM-6514
hm3-6514-9
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HM-6514-9
Abstract: No abstract text available
Text: H M -6 5 1 4 SI HARRIS 1024 x 4 CMOS RAM Features Pinouts Low Power Max. Low Power O peration. 35mW/MHzMax. Data Retention. @2.0V Min.
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35mW/MHzMax.
120/200ns
-40OC
HM-6514-9
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equivalent data book of 10N60 mosfet
Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:
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1-800-4HARRIS
equivalent data book of 10N60 mosfet
MC14016CP
GD4511
an-6466
CX 2859 SMD
74AC14 spice
6120* harris
HCF4018be
7028 SMD Transistor
spice irfbc40
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Untitled
Abstract: No abstract text available
Text: 3J HARRIS H M -6 5 1 4 1 0 2 4 x 4 CMOS RAM Features Pinouts TOP VIEW • Low Power 25jiW Max. • • • • • • • • Low Power O peration. 35mW/MHz Max.
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25jiW
35mW/MHz
120/200ns
HM-SS14
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pin diagram AMD FX 9590
Abstract: Transistor AF 138 laser sharp measurement d6406 pby 283 diode data book SN74298
Text: V o lu m e 5 $5.00 Harris Semiconductor Sector Capabilities Harris Semiconductor, one of the top ten U.S. merchant semiconductor suppliers, is a sector of Harris Corporation — a producer of advanced information processing, communication and microelectronic
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K29793
NZ21084
RS39191
pin diagram AMD FX 9590
Transistor AF 138
laser sharp measurement
d6406
pby 283 diode data book
SN74298
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74c920
Abstract: 74C929 74C930 1 phase SCR TRIGGER PULSE TRANSFORMER d8259ac zener chn 848 P8255 interfacing 8289 with 8086 HD-6402C-9 harris semiconductor cmos
Text: ADVANCED SEMICONDUCTOR DEVIC^S P T Y LTD y I JOHANNESBURG 2000 TEL. 802-5820 DIGITAL DATA BOOK Part of the Harris Spectrum of Integrated Circuits HARRIS $ 5 .0 0 1 9 8 4 Harris C M O S Digital Data Book Harris Semiconductor CMOS Digital Products Division's
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TCA965 equivalent
Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Text: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated
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DG211.
DG300
DG308
DG211
TCA965 equivalent
ULN2283
capacitor 473j 100n
UAF771
transistor GDV 65A
pbd352303
cm2716
TAA2761
TAA4761
ULN2401
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Untitled
Abstract: No abstract text available
Text: a H a r r is h M -6 1024 x 4 CMOS RAM June 1989 P in o u t F eatures • This Circuit is Processed in Accordance to M il-S td -8 8 3 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. • Low Power S ta n d b y 5 1 4 /8 8 3 HM 1 - 6 5 1 4 /8 8 3 C ER A M IC DIP
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triac tag 8518
Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Text: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference
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JRC 45600
Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES
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ZOP033
ZOP035
ZOP036
ZOP037
ZOP038
ZOP039
ZOP045
ZOP042
ZOP041
ZOP043
JRC 45600
YD 803 SGS
45600 JRC
TDA 7277
TDA 5072
krp power source sps 6360
2904 JRC
Sony
SHA T90 SA
philips HFE 4541
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information applikation
Abstract: Halbleiterbauelemente DDR U555C information applikation mikroelektronik VEB mikroelektronik "Mikroelektronik" Heft mikroelektronik DDR mikroelektronik Heft mikroelektronik applikation Transistoren DDR
Text: in n ilk a n í o J B lB t a L J I , L J n Í lH KáD Information Applikation Halbleiter Speicher Teil 1 SRAM [ n n ilk r a ^ e lE s k t s n a r iik Information Applikation HEFT 79- , HALBLEITERSPEiCHER TEIL li > < .1* • • r* - . SRAM * VEB Halbleiterwerk Frankfurt Oder
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