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    Text: HAT3006R Silicon N Channel / P Channel Power MOS FET High Speed Power Switching HITACHI Features • Low on-resistance • Capable o f 4 V gate drive • Low drive current • High density mounting Outline SO P-8 916 7 8 D D 5 6 D D IS IS Ô ô S1 S3 Nch Pch


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    PDF HAT3006R ADE-208-480 HAT30O6R