HBT TRANSISTOR S PARAMETERS MEASURES Search Results

HBT TRANSISTOR S PARAMETERS MEASURES Result Highlights (5)

Part	Manufacturer	Description
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns
XPQR8308QB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL
XPQ1R00AQB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL

HBT TRANSISTOR S PARAMETERS MEASURES Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
RF2316 Abstract: TA0015 DIN4500B RF2312 RF2317 HBT transistor s parameters measures Text: TA0015 TA0015 RF2312/RF2317: High Linearity HBT Amplifiers for CATV Systems +LJK /LQHDULW\ +%7 $PSOLILHUV IRU &$79 6\VWHPV ,QWURGXFWLRQ The need for high linearity amplifiers arises from stress placed on communications channels by the addition of more data and the requirement to handle digitally modulated signals with high fidelity. As the amount of data	Original	TA0015 RF2312/RF2317: RF2316 TA0015 DIN4500B RF2312 RF2317 HBT transistor s parameters measures	PDF
RF2316 Abstract: DIN4500B TA0015 HBT transistor s parameters measures Text: TA0015 TA0015 RF2312/RF2317: High Linearity HBT Amplifiers for CATV Systems Monolithic Amplifiers using GaAs HBT technology have been developed. HBT based amplifiers offer extremely flat frequency response with high dynamic	Original	TA0015 RF2312/RF2317: 40dBm. RF2317 RF2316. RF2316 DIN4500B TA0015 HBT transistor s parameters measures	PDF
GaAs MMIC ESD, Die Attach and Bonding Guidelines Abstract: diagram ta 306-2 Text: HMMC-5200 DC–20 GHz HBT Series–Shunt Amplifier Data Sheet Description Features The HMMC-5200 is a DC to 20 GHz, 9.5 dB gain, feedback amplifier designed to be used as a cascadable gain block for a variety of applications. The device consists of a modified Darlington feedback pair which reduces the	Original	HMMC-5200 HMMC-5200 460mm AV01-xxxxEN GaAs MMIC ESD, Die Attach and Bonding Guidelines diagram ta 306-2	PDF
agilent HBT transistor series Abstract: No abstract text available Text: Agilent HMMC-5220 DC–15 GHz HBT Series–Shunt Amplifier Data Sheet Features •High Bandwidth, F−1dB: 16 GHz Typical •Moderate Gain: 10 dB ± 1 dB @ 1.5 GHz •P−1dB @ 1.5 GHz: 12.5 dBm Typical •Low l/f Noise Corner: <20 kHz Typical •Single Supply Operation:	Original	HMMC-5220 5988-3201EN agilent HBT transistor series	PDF
Untitled Abstract: No abstract text available Text: Agilent HMMC-5200 DC–20 GHz HBT Series–Shunt Amplifier Data Sheet Features • High Bandwidth, F−1dB: 21 GHz Typical • Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz • P−1dB @ 1.5 GHz: 12.5 dBm Typical • Low l/f Noise Corner: <20 kHz Typical • Single Supply Operation:	Original	HMMC-5200 5988-3202EN	PDF
HMMC-5200 Abstract: GaAs MMIC ESD, Die Attach and Bonding Guidelines Text: Agilent HMMC-5200 DC–20 GHz HBT Series–Shunt Amplifier Data Sheet Features •High Bandwidth, F−1dB: 21 GHz Typical •Moderate Gain: 9.5 dB ±1 dB @ 1.5 GHz •P−1dB @ 1.5 GHz: 12.5 dBm Typical •Low l/f Noise Corner: <20 kHz Typical •Single Supply Operation:	Original	HMMC-5200 HMMC-5200 5988-3202EN GaAs MMIC ESD, Die Attach and Bonding Guidelines	PDF
FPD6836SOT343E Abstract: 0604HQ FPD6836SOT343ESB FPD6836SOT343ESQ 0603 footprint IPC im 1117 atc x7r transistor bc 540 Text: FPD6836SOT343E FPD6836SOT3 43ELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive	Original	FPD6836SOT343E FPD6836SOT3 43ELow-Noise OT343 1850MHz) 2002/95/EC) 18dBm FPD6836SOT343E mx750 0604HQ FPD6836SOT343ESB FPD6836SOT343ESQ 0603 footprint IPC im 1117 atc x7r transistor bc 540	PDF
FPM2750 Abstract: FPM2750QFN QFN-style HBT transistor s parameters measures CAP-22nF-0603-10 Text: FPM2750QFN FPM2750QFN Low-Noise High-Linearity Balanced Amplifier Module LOW-NOISE HIGH-LINEARITY BALANCED AMPLIFIER MODULE Package: 4mmx4mm QFN Product Description Features The FPM2750QFN is a packaged pair of transistors pHEMT specifically optimized for balanced configuration systems. Our 0.25µm process	Original	FPM2750QFN FPM2750QFN 1850MHz 85GHz) FPM2750QFNPCK FPM27500QFNSQ FPM2750QFNSR FPM2750 QFN-style HBT transistor s parameters measures CAP-22nF-0603-10	PDF
Untitled Abstract: No abstract text available Text: FPM2750QFN FPM2750QFN Low-Noise High-Linearity Balanced Amplifier Module LOW-NOISE HIGH-LINEARITY BALANCED AMPLIFIER MODULE Package: 4mmx4mm QFN Product Description Features The FPM2750QFN is a packaged pair of transistors pHEMT specifically optimized for balanced configuration systems. Our 0.25µm process	Original	FPM2750QFN FPM2750QFN 1850MHz 36dBm 100mA) 23dBm 85GHz)	PDF
transistor bc 564 Abstract: bc 5578 0604HQ FPD6836SOT343 OT343 re 0603size bc 548 transistor S22m transistor BC 548 Data transistor Bc 540 Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive	Original	FPD6836SOT343 FPD6836SOT3 OT343 1850MHz) 2002/95/EC) 18dBm FPD6836SOT343 mx750 FPD6836SOT343E EB6836SOT343CE-BA transistor bc 564 bc 5578 0604HQ OT343 re 0603size bc 548 transistor S22m transistor BC 548 Data transistor Bc 540	PDF
qualcomm msm 8660 Abstract: ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517 Text: 1 2 3 4 5 6 7 ! " 8 # 9 !	Original	RF2043 RF2044 RF2045 RF2046 RF2047 RF2048 RF2103P org/jedec/download/std020 qualcomm msm 8660 ecu repair proton rx 4000 watts power amplifier circuit diagram preamplifier proton 1100 MOBILE jammer GSM 1800 MHZ circuit diagram Qualcomm 8200 proton rx 3000 RF2713 433MHz saw Based Transmitter Schematic and PCB La RF2517	PDF
FPM2750QFN Abstract: FPM2750 0603 footprint IPC 1P503 EBD15PA Text: FPM2750QFN FPM2750QFN Low-Noise High-Linearity Balanced Amplifier Module LOW-NOISE HIGH-LINEARITY BALANCED AMPLIFIER MODULE Package: 4mmx4mm QFN Product Description Features The FPM2750QFN is a packaged pair of transistors pHEMT specifically optimized for balanced configuration systems. Our 0.25µm process	Original	FPM2750QFN FPM2750QFN 1850MHz 36dBm 100mA) 23dBm 900MHz) FPM2750 0603 footprint IPC 1P503 EBD15PA	PDF
FPM2750 Abstract: No abstract text available Text: FPM2750QFN FPM2750QFN Low-Noise High-Linearity Balanced Amplifier Module LOW-NOISE HIGH-LINEARITY BALANCED AMPLIFIER MODULE Package: 4mmx4mm QFN Product Description Features The FPM2750QFN is a packaged pair of transistors pHEMT specifically optimized for balanced configuration systems. Our 0.25 m process	Original	FPM2750QFN FPM2750QFN 85GHz) FPM2750QFNPCK FPM2750QFNSR FPM27500QFNSQ FPM27500QFNSB FPM2750	PDF
pseudomorphic HEMT Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564 Text: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm	Original	FPD6836SOT343 FPD6836SOT3 OT343 FPD6836SOT343 mx750 1850MHz) 18dBm 2002/95/EC) FPD6836SOT343E FPD6836SOT343E-AG pseudomorphic HEMT TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564	PDF

fpd200p70 Abstract: w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.	Original	FPD200P70 FPD200P70 25mmx200mm 26GHz 20dBm 15GHz EB200P70-AJ w65 transistor FPD200P70SR TL11 TL22 "IPC 1752" gold 8GH transistor L30 type RF microwave power transistor FPD200P70SB 3400 transistor	PDF
LQH1C4R7M04 Abstract: MAX1958 MAX1958ETP MAX1959 MAX1959ETP Nippon capacitors Text: 19-2659; Rev 0; 10/02 KIT ATION EVALU E L B A IL AVA W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs The MAX1958/MAX1959 power amplifier PA powermanagement ICs (PMICs) integrate an 800mA, dynamically adjustable step-down converter, a 5mA Rail-toRail operational amplifier (op amp), and a precision	Original	MAX1958/MAX1959 800mA, 800mA. MAX1958) MAX1959) MO220. LQH1C4R7M04 MAX1958 MAX1958ETP MAX1959 MAX1959ETP Nippon capacitors	PDF
Untitled Abstract: No abstract text available Text: 19-2659; Rev 0; 10/02 KIT ATION EVALU E L B A IL AVA W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs The MAX1958/MAX1959 power amplifier PA powermanagement ICs (PMICs) integrate an 800mA, dynamically adjustable step-down converter, a 5mA Rail-toRail operational amplifier (op amp), and a precision	Original	MAX1958/MAX1959 800mA, 800mA. MAX1958) MAX1959) MO220.	PDF
FPD200P70 Abstract: TL11 TL22 l420 FPD200P70SR Text: FPD200P70 FPD200P70 High Frequency Packaged pHEMT HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD200P70 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25mmx200mm Schottky barrier gate, defined by high-resolution stepper-based photolithography.	Original	FPD200P70 FPD200P70 25mmx200mm 20dBm 26GHz 15GHz FPD200P70-AJ TL11 TL22 l420 FPD200P70SR	PDF
Untitled Abstract: No abstract text available Text: DATA SHEET NPN SILICON GERMANIUM RF TRANSISTOR NESG3032M14 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION 4-PIN LEAD-LESS MINIMOLD M14, 1208 PACKAGE FEATURES • The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP. @ VCE = 2 V, IC = 6 mA, f = 2.0 GHz	Original	NESG3032M14 NESG3032M14 NESG3032M14-A NESG3032M14-T3 NESG3032M14-T3-A	PDF
FPD750SOT343E Abstract: FPD750 FPD750SOT343 0402CS FPD750SOT343CE toko 1201 Text: FPD750SOT343E FPD750SOT34 3E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive	Original	FPD750SOT343E FPD750SOT34 OT343 1850MHz) 2002/95/EC) 20dBm 37dBm FPD750SOT343CE mx750 FPD750SOT343E FPD750 FPD750SOT343 0402CS toko 1201	PDF
Untitled Abstract: No abstract text available Text: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT NOT FOR NEW DESIGNS Package: 2mmx2mm DFN Product Description Features The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a	Original	FPD750DFN FPD750DFN mx750Â EB750DFN-BC FPD750DFNSR FPD750DFNSQ DS100126	PDF
FPD1500SOT89 Abstract: FPD2250SOT89 FPD2250SOT89E TRANSISTOR SSG 111 oint 4410 HBT transistor s parameters measures Text: FPD2250SOT89 FPD2250SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT89 Features      Optimum Technology Matching Applied   GaAs HBT GaAs MESFET InGaP HBT 60% Power-Added Efficiency	Original	FPD2250SOT89 FPD2250SOT8 FPD2250SOT89E: 31dBm 44dBm FPD2250SOT89 25mx1500m FPD2250SOT89E EB2250SOT89CE EB2250SOT89CE-BC FPD1500SOT89 FPD2250SOT89E TRANSISTOR SSG 111 oint 4410 HBT transistor s parameters measures	PDF
si 4422 Abstract: FPD1500DFN FPD750DFN FPD750SOT89 Z624 Z5 1512 Text: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT NOT FOR NEW DESIGNS Package: 2mmx2mm DFN Product Description Features Optimum Technology Matching Applied GaAs HBT 24dBm Output Power P1dB at 1.85GHz	Original	FPD750DFN 24dBm 85GHz 39dBm FPD750DFN mx750 EB750DFN-BC si 4422 FPD1500DFN FPD750SOT89 Z624 Z5 1512	PDF
fpd750sot89e Abstract: Transistor BC 1078 transistor 037J FPD750SOT89ESR TRANSISTOR 8550, SOT89 1608 Size Chip Resistor 122 Text: FPD750SOT89E FPD750SOT89 E Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89CE is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25mx1500m	Original	FPD750SOT89 FPD750SOT89E FPD750SOT89CE mx1500 25dBm 39dBm FPD750SOT89CE: FPD750SOT89E FPD750SOT89PCK Transistor BC 1078 transistor 037J FPD750SOT89ESR TRANSISTOR 8550, SOT89 1608 Size Chip Resistor 122	PDF

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HBT TRANSISTOR S PARAMETERS MEASURES Search Results

HBT TRANSISTOR S PARAMETERS MEASURES Result Highlights (5)

HBT TRANSISTOR S PARAMETERS MEASURES Datasheets Context Search

RF2316

RF2316

GaAs MMIC ESD, Die Attach and Bonding Guidelines

agilent HBT transistor series

Untitled

HMMC-5200

FPD6836SOT343E

FPM2750

Untitled

transistor bc 564

qualcomm msm 8660

FPM2750QFN

FPM2750

pseudomorphic HEMT

fpd200p70

LQH1C4R7M04

Untitled

FPD200P70

Untitled

FPD750SOT343E

Untitled

FPD1500SOT89

si 4422

fpd750sot89e