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    y2 marking

    Abstract: A1 marking code amplifier HJ3669 a5 marking
    Text: HI-SINCERITY Spec. No. : HE6029 Issued Date : 1997.10.24 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ3669 is designed for using in power amplifier applications, power switching application.


    Original     		PDF HE6029 HJ3669 HJ3669 O-252 183oC 217oC 260oC y2 marking A1 marking code amplifier a5 marking

    HJ3669

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6029-B Issued Date : 1997.10.24 Revised Date : 2000.11.01 Page No. : 1/3 HJ3669 NPN EPITAXIAL PLANAR TRANSISTOR Description The HJ3669 is designed for using in power amplifier applications, power switching application.


    Original     		PDF HE6029-B HJ3669 HJ3669