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Catalog Datasheet	MFG & Type	Document Tags	PDF
H2N6517 Abstract: H2N6520 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6274-B Issued Date : 1994.11.18 Revised Date : 2000.09.28 Page No. : 1/3 H2N6520 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N6520 is designed for general purpose applications requiring high breakdown voltages.	Original	HE6274-B H2N6520 H2N6520 H2N6517 H2N6517	PDF
H2N6427 Abstract: No abstract text available Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6274-B Issued Date : 1994.11.18 Revised Date : 2000.09.15 Page No. : 1/3 H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C	Original	HE6274-B H2N6427 H2N6427	PDF
H2N6517 Abstract: H2N6520 Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6274 Issued Date : 1994.11.18 Revised Date : 2005.01.20 Page No. : 1/4 H2N6520 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2N6520 is designed for general purpose applications requiring high breakdown voltages.	Original	HE6274 H2N6520 H2N6520 H2N6517 183oC 217oC 260oC H2N6517	PDF
DARLINGTON TIN Abstract: H2N6427 Darlington transistor to 92 Text: HI-SINCERITY Spec. No. : HE6274 Issued Date : 1994.11.18 Revised Date : 2005.01.20 Page No. : 1/4 MICROELECTRONICS CORP. H2N6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor TO-92 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C	Original	HE6274 H2N6427 183oC 217oC 260oC DARLINGTON TIN H2N6427 Darlington transistor to 92	PDF