Untitled
Abstract: No abstract text available
Text: HI-SINCERITY Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2004.11.19 Page No. : 1/4 MICROELECTRONICS CORP. HSB857 / 2SB857 PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-220 Absolute Maximum Ratings TA=25°C • Maximum Temperatures
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Original
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HE6705
HSB857
2SB857
O-220
183oC
217oC
260oC
HSB857
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PDF
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SB857
Abstract: 2SB857 HSB857
Text: HI-SINCERITY Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2005.10.07 Page No. : 1/4 MICROELECTRONICS CORP. HSB857 / 2SB857 PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-220 Absolute Maximum Ratings TA=25°C • Maximum Temperatures
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Original
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HE6705
HSB857
2SB857
O-220
183oC
217oC
260oC
HSB857
SB857
2SB857
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PDF
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2SB857
Abstract: HSB857
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2001.09.13 Page No. : 1/3 HSB857 / 2SB857 PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. Absolute Maximum Ratings Ta=25°C • Maximum Temperatures
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Original
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HE6705
HSB857
2SB857
HSB857
2SB857
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PDF
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HSB857D
Abstract: HE6705
Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2002.03.06 Page No. : 1/4 HSB857D PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. Absolute Maximum Ratings Ta=25°C TO-126ML • Maximum Temperatures
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Original
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HE6705
HSB857D
O-126ML
HSB857D
HE6705
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PDF
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TL 188 TRANSISTOR PNP
Abstract: HSB857D
Text: HI-SINCERITY Spec. No. : HE6705 Issued Date : 1995.01.27 Revised Date : 2005.08.18 Page No. : 1/4 MICROELECTRONICS CORP. HSB857D PNP EPITAXIAL PLANAR TRANSISTOR Description Low frequency power amplifier. TO-126ML Absolute Maximum Ratings TA=25°C • Maximum Temperatures
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Original
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HE6705
HSB857D
O-126ML
183oC
217oC
260oC
TL 188 TRANSISTOR PNP
HSB857D
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PDF
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