ATF501P8
Abstract: ATF-501P8 ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 MO229
Text: Agilent ATF-501P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High Linearity and P1dB • Low Noise Figure Pin Connections and Package Marking The thermally efficient package
|
Original
|
ATF-501P8
5988-9767EN
ATF501P8
ATF-501P8-BLK
ATF-501P8-TR1
ATF-501P8-TR2
MO229
|
PDF
|
ATF-501P8
Abstract: 4570 8-pin RF 902-145 A004R ATF501P8 ATF-501P8-BLK ATF-501P8-TR1 ATF-501P8-TR2 MO229 4558 schematic diagram
Text: Agilent ATF-501P8 High Linearity Enhancement Mode [1] Pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features • Single voltage operation • High Linearity and P1dB • Low Noise Figure Pin Connections and Package Marking The thermally efficient package
|
Original
|
ATF-501P8
5988-9767EN
4570 8-pin RF
902-145
A004R
ATF501P8
ATF-501P8-BLK
ATF-501P8-TR1
ATF-501P8-TR2
MO229
4558 schematic diagram
|
PDF
|
Micro-X marking "K"
Abstract: low noise Micro-X marking "K" Micro-X Marking E RO4350B rogers HEMT marking G HEMT marking K GD-32 hemt low noise die Micro-X Marking v transistor "micro-x" "marking" 3
Text: PRELIMINARY < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=25.2GHz
|
Original
|
MGF4941CL
MGF4941CL
4000pcs
Micro-X marking "K"
low noise Micro-X marking "K"
Micro-X Marking E
RO4350B rogers
HEMT marking G
HEMT marking K
GD-32
hemt low noise die
Micro-X Marking v
transistor "micro-x" "marking" 3
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101
|
Original
|
MGF4941CL
MGF4941CL
AEC-Q101
4000pcs
|
PDF
|
RO4350B ROGERS
Abstract: transistor "micro-x" "marking" 3 RO4350B max current MGF4941CL GD-32 low noise Micro-X marking "K" RO4350B
Text: < Low Noise GaAs HEMT > MGF4941CL Micro-X type plastic package DESCRIPTION The MGF4941CL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The MGF4941CL is designed for automotive application and AEC-Q101
|
Original
|
MGF4941CL
MGF4941CL
AEC-Q101
4000pcs
RO4350B ROGERS
transistor "micro-x" "marking" 3
RO4350B max current
GD-32
low noise Micro-X marking "K"
RO4350B
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
|
Original
|
MGF4934CM
MGF4934CM
12GHz
MGF4934CM-75
15000pcs/reel
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
|
Original
|
MGF4953A
MGF4953A
12GHz
000pcs/reel
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4953B Leadless ceramic package DESCRIPTION The MGF4953B super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing
|
Original
|
MGF4953B
MGF4953B
20GHz
000pcs/reel
MGF4953B-01)
MGF4953B-70al
|
PDF
|
MGF4963BL
Abstract: HEMT marking K GD-32 low noise Micro-X marking "K" MGF4963B
Text: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)
|
Original
|
MGF4963BL
MGF4963BL
20GHz
4000pcs
HEMT marking K
GD-32
low noise Micro-X marking "K"
MGF4963B
|
PDF
|
MGF4964
Abstract: Micro-X marking "K" MGF4964BL transistor "micro-x" "marking" 3 low noise Micro-X marking "K" HEMT marking K Low Noise Gaas GD-32 MGF4964B MGF496
Text: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)
|
Original
|
MGF4964BL
MGF4964BL
20GHz
4000pcs
MGF4964
Micro-X marking "K"
transistor "micro-x" "marking" 3
low noise Micro-X marking "K"
HEMT marking K
Low Noise Gaas
GD-32
MGF4964B
MGF496
|
PDF
|
MGF4931AM
Abstract: MGF4931 77153
Text: < Low Noise GaAs HEMT > MGF4931AM 4pin flat lead package DESCRIPTION The MGF4931AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
|
Original
|
MGF4931AM
MGF4931AM
12GHz
15000pcs/reel
MGF4931
77153
|
PDF
|
HEMT marking K
Abstract: MGF4953A
Text: < Low Noise GaAs HEMT > MGF4953A Leadless ceramic package DESCRIPTION The MGF4953A super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in C to K band amplifiers. The lead-less ceramic package assures minimum parasitic losses.
|
Original
|
MGF4953A
MGF4953A
12GHz
000pcs/reel
HEMT marking K
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4963BL Micro-X type plastic package DESCRIPTION The MGF4963BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.70dB (Typ.)
|
Original
|
MGF4963BL
MGF4963BL
20GHz
4000pcs
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4964BL Micro-X type plastic package DESCRIPTION The MGF4964BL super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. Outline Drawing FEATURES Low noise figure @ f=20GHz NFmin. = 0.65dB (Typ.)
|
Original
|
MGF4964BL
MGF4964BL
20GHz
4000pcs
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4931AM 4pin flat lead package DESCRIPTION The MGF4931AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
|
Original
|
MGF4931AM
MGF4931AM
12GHz
15000pcs/reel
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4936AM 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
|
Original
|
MGF4936AM
MGF4936AM
12GHz
MGF4936AM-75
15000pcs/reel
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4936AM 4pin flat lead package DESCRIPTION The MGF4936AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
|
Original
|
MGF4936AM
MGF4936AM
12GHz
MGF4936AM-75
15000pcs/reel
|
PDF
|
MGF4934
Abstract: mgf4934cm MGF4934CM-75 130/KU 601
Text: < Low Noise GaAs HEMT > MGF4934CM 4pin flat lead package DESCRIPTION The MGF4934CM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in S to Ku band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
|
Original
|
MGF4934CM
MGF4934CM
12GHz
MGF4934CM-75
15000pcs/reel
MGF4934
130/KU 601
|
PDF
|
MGF4953B
Abstract: MGF4953B-70
Text: < Low Noise GaAs HEMT > MGF4953B Leadless ceramic package DESCRIPTION The MGF4953B super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The lead-less ceramic package assures minimum parasitic losses. Outline Drawing
|
Original
|
MGF4953B
MGF4953B
20GHz
000pcs/reel
000pcs/reel
MGF4953B-01)
MGF4953B-70)
MGF4953B-70
|
PDF
|
MGF4921AM
Abstract: 5442
Text: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
|
Original
|
MGF4921AM
MGF4921AM
15ric
5442
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4965BM 4pin flat lead package DESCRIPTION The MGF4965BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
|
Original
|
MGF4965BM
MGF4965BM
20GHz
15000pcs/reel
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4965BM 4pin flat lead package DESCRIPTION The MGF4965BM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in K band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
|
Original
|
MGF4965BM
MGF4965BM
20GHz
15000pcs/reel
|
PDF
|
MGF4921AM
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
|
Original
|
MGF4921AM
MGF4921AM
|
PDF
|
Untitled
Abstract: No abstract text available
Text: < Low Noise GaAs HEMT > MGF4921AM 4pin flat lead package DESCRIPTION The MGF4921AM super-low noise InGaAs HEMT High Electron Mobility Transistor is designed for use in L to C band amplifiers. The 4pin flat lead package is small-thin size, and offers high cost
|
Original
|
MGF4921AM
MGF4921AM
|
PDF
|
