314P
Abstract: EIA-541 FL014 IRFL014
Text: PD - 95316 IRFL1006PbF HEXFET Power MOSFET Surface Mount Advanced Process Technology Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 60V RDS on = 0.22Ω G ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier
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IRFL1006PbF
OT-223
EIA-481
EIA-541.
EIA-418-1.
314P
EIA-541
FL014
IRFL014
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P-Channel MOSFET 800v
Abstract: 800v irf IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRFBE30L IRFBE30S IRL3103L P-Channel mosfet 400v P Channel Power MOSFET IRF ED marking code diode
Text: PD - 95507 IRFBE30SPbF IRFBE30LPbF O O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements Lead-Free D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30SPbF
IRFBE30LPbF
IRFBE30S
O-262
IRFBE30L
Dissi957)
EIA-418.
P-Channel MOSFET 800v
800v irf
IRF P CHANNEL MOSFET
IRF P CHANNEL MOSFET 100v
IRFBE30L
IRFBE30S
IRL3103L
P-Channel mosfet 400v
P Channel Power MOSFET IRF
ED marking code diode
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IRFL024N
Abstract: No abstract text available
Text: PD - 91861A IRFL024N HEXFET Power MOSFET l l l l l l Surface Mount Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating Fast Switching Fully Avalanche Rated D VDSS = 55V RDS on = 0.075Ω G ID = 2.8A S Description Fifth Generation HEXFETs from International Rectifier
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1861A
IRFL024N
OT-223
IRFL024N
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SMD-220
Abstract: smd diode marking 12c DIODE smd marking 52A smd diode 2F SMD tr 2f Diode smd 2f AN-994 IRL620S smd diode marking 20W SMD220
Text: PD -9.1218 IRL620S HEXFET Power MOSFET Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Repetitive Avalanche Rated Logic-Level Gate Drive RDS on Specified at VGS=4V & 5V Fast Switching VDSS = 200V RDS(on) = 0.80Ω ID = 5.2A Description Third Generation HEXFETs from International Rectifier provide the designer
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IRL620S
SMD-220
interna-220
SMD-220
smd diode marking 12c
DIODE smd marking 52A
smd diode 2F
SMD tr 2f
Diode smd 2f
AN-994
IRL620S
smd diode marking 20W
SMD220
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IRFz44n equivalent
Abstract: IRFIZ44N IRFZ44N IRFIZ44N equivalent irf 630
Text: PD - 9.1403A IRFIZ44N HEXFET Power MOSFET l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated D VDSS = 55V RDS on = 0.024Ω G ID = 31A S Description Fifth Generation HEXFETs from International Rectifier
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IRFIZ44N
O-220
IRFz44n equivalent
IRFIZ44N
IRFZ44N
IRFIZ44N equivalent
irf 630
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IRF520N
Abstract: specifications Irf520N
Text: PD - 91339A IRF520N HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V RDS on = 0.20Ω G Description ID = 9.7A S Fifth Generation HEXFETs from International Rectifier
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1339A
IRF520N
O-220
IRF520N
specifications Irf520N
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F7101
Abstract: IRF7101 IRF7311 MS-012AA
Text: PD - 91435C IRF7311 HEXFET Power MOSFET l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Fully Avalanche Rated 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 S1 VDSS = 20V RDS on = 0.029Ω T o p V ie w Description Fifth Generation HEXFETs from International Rectifier
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91435C
IRF7311
F7101
IRF7101
IRF7311
MS-012AA
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smd fl014
Abstract: FL014 FL014 Example transistor SMD FL014 EIA-541 IRFL014 IRFL4310 838 infra red i*l014 MARKING 93 SOT-223
Text: PD - 91368B IRFL4310 HEXFET Power MOSFET D l l l l l l Surface Mount Dynamic dv/dt Rating Fast Switching Ease of Paralleling Advanced Process Technology Ultra Low On-Resistance VDSS = 100V RDS on = 0.20W G ID = 1.6A S Description Fifth Generation HEXFETs from International Rectifier
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91368B
IRFL4310
OT-223
smd fl014
FL014
FL014 Example
transistor SMD FL014
EIA-541
IRFL014
IRFL4310
838 infra red
i*l014
MARKING 93 SOT-223
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Untitled
Abstract: No abstract text available
Text: PD - 94694 IRFBE30S IRFBE30L O O O O O HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paralleling Simple Drive Requirements D VDSS = 800V RDS on = 3.0Ω G ID = 4.1A S Description Third Generation HEXFETs from International
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IRFBE30S
IRFBE30L
O-262
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD - 9.590A IRCZ34 HEXFET Power MOSFET l l l l l l Dynamic dv/dt Rating Current Sense 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements VDSS = 60V RDS on = 0.050Ω ID = 30A Description Third Generation HEXFETs from International Rectifier provide the designer with
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IRCZ34
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD - 9.891A IRFZ24S/L HEXFET Power MOSFET l l l l l Advanced Process Technology Surface Mount IRFZ24S Low-profile through-hole (IRFZ24L) 175°C Operating Temperature Fast Switching D VDSS = 60V RDS(on) = 0.10Ω G ID = 17A S Description Third Generation HEXFETs from International Rectifier
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IRFZ24S/L
IRFZ24S)
IRFZ24L)
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD - 9.1488 IRFI9634G PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -250V RDS on = 1.0Ω G ID = -4.1A S Description Third Generation HEXFETs from International Rectifier
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IRFI9634G
-250V
O-220
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD -9.1272 IRFD224 HEXFET Power MOSFET Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion End Stackable Fast Switching Ease of paralleling Simple Drive Requirements VDSS = 250V RDS on = 1.1Ω ID = 0.63A Description Third Generation HEXFETs from International Rectifier provide the designer
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IRFD224
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD 9.1663 IRFR/U9310 PRELIMINARY HEXFET Power MOSFET l l l l l l P-Channel Surface Mount IRFR9310 Straight Lead (IRFU9310) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = -400V RDS(on) = 7.0Ω G ID = -1.8A S Description Third Generation HEXFETs from International Rectifier
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IRFR/U9310
IRFR9310)
IRFU9310)
-400V
08-Mar-07
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Untitled
Abstract: No abstract text available
Text: PD - 9.1314 IRF737LC PRELIMINARY HEXFET Power MOSFET Reduced Gate Drive Requirement Enhanced 30V VGS Rating Reduced CISS, COSS, CRSS Extremely High Frequency Operation Repetitive Avalanche Rated VDSS = 300V RDS on = 0.75Ω ID = 6.1A Description This new series of Low Charge HEXFETs achieve
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IRF737LC
08-Mar-07
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IRF6215
Abstract: No abstract text available
Text: PD - 91479B IRF6215 HEXFET Power MOSFET Advanced Process Technology Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l P-Channel l Fully Avalanche Rated Description l D l VDSS = -150V RDS on = 0.29Ω G ID = -13A S Fifth Generation HEXFETs from International Rectifier
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91479B
IRF6215
-150V
O-220
IRF6215
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IRFI9634G
Abstract: No abstract text available
Text: PD - 9.1488 IRFI9634G PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 150°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -250V RDS on = 1.0Ω G ID = -4.1A S Description Third Generation HEXFETs from International Rectifier
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IRFI9634G
-250V
O-220
IRFI9634G
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IRF5305
Abstract: No abstract text available
Text: PD - 91385B IRF5305 HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -55V RDS on = 0.06Ω G ID = -31A S Description Fifth Generation HEXFETs from International Rectifier
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91385B
IRF5305
O-220
IRF5305
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IRF3315
Abstract: No abstract text available
Text: PD -91623A APPROVED IRF3315 HEXFET Power MOSFET l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 150V RDS on = 0.07Ω G Description ID = 27A S Fifth Generation HEXFETs from International Rectifier
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-91623A
IRF3315
O-220
IRF3315
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IRLML2402
Abstract: EIA-541 7.5v voltage regulator SOT 23
Text: PD - 91257D IRLML2402 HEXFET Power MOSFET l l l l l l l Generation V Technology Ultra Low On-Resistance N-Channel MOSFET SOT-23 Footprint Low Profile <1.1mm Available in Tape and Reel Fast Switching D VDSS = 20V G RDS(on) = 0.25Ω S Description Fifth Generation HEXFETs from International Rectifier
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91257D
IRLML2402
OT-23
O-236AB)
EIA-481
EIA-541.
IRLML2402
EIA-541
7.5v voltage regulator SOT 23
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AN-994
Abstract: IRL2910 IRL2910L SS2000
Text: PD - 91376B IRL2910S/L HEXFET Power MOSFET Logic-Level Gate Drive Surface Mount l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description l l D VDSS = 100V RDS on = 0.026Ω G Fifth Generation HEXFETs from International Rectifier
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91376B
IRL2910S/L
AN-994
IRL2910
IRL2910L
SS2000
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IRHM8450
Abstract: 2N7270 IRHM7450 JANSH2N7270 JANSR2N7270
Text: PD - 90673A IRHM7450 IRHM8450 JANSR2N7270 JANSH2N7270 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL MEGA RAD HARD 500Volt, 0.45Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage
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0673A
IRHM7450
IRHM8450
JANSR2N7270
JANSH2N7270
500Volt,
1x106
IRHM8450
2N7270
IRHM7450
JANSH2N7270
JANSR2N7270
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2N7268
Abstract: IRHM7150 IRHM8150 h206 h208 IRHM7150U
Text: Data Sheet No. PD-9.675A INTERNATIONAL RECTIFIER l I O R REPETITIVE AVALANCHE AND dv/dt RATED IRHM7150 IRHM8150 HEXFET TRANSISTORS N-CHANNEL SN7868 JANSRSN7S68 JANSHSN7S68 MEGA RAD HARD 100 Volt, 0.065Q, MEGA RAD HARD HEXFET Product Summary International Rectifier's MEGA RAD HARD Technology HEXFETs
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IRHM7150
IRHM815Q
IRHM8150
JANSRSN7S68
1x106
1x105
IRHM71500
IRHM7150U
2N7268
h206
h208
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9442
Abstract: IRFP460 IRFP240 IRFPE20 IRFPG42 IRFP142 IRFP141 IR*343 IRFP044 IRFP143
Text: IOR PLASTIC PACKAGE HEXFETs INTERNATIONAL. RECTIFIER INTERNATI ONAL TO-247 Package RECTIFIER 2bE D 4055452 Q01GSS7 7 T -3 9 -Û 3 M-GHANNEL Types Rq sio n max) % IRFP151 IRFP153 IRFP141 IRFP143 IRFP150 IRFP152 IRFP140 IRFP142 IRFP251 IRFP253 IRFP241 IRFP243
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O-247
4flSS452
Q010557
T-39-Ã
IRFP054
T0-247AC
IRFP044
IRFP045
IRFP151
IRFP153
9442
IRFP460
IRFP240
IRFPE20
IRFPG42
IRFP142
IRFP141
IR*343
IRFP143
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