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    HEXFRED DIE IN WAFER FORM Search Results

    HEXFRED DIE IN WAFER FORM Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP3406SRH4 Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 30 V/0.9 A, 300 Vrms, S-VSON16T Visit Toshiba Electronic Devices & Storage Corporation
    TLP3407SRA Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/1 A, 500 Vrms, S-VSON4T Visit Toshiba Electronic Devices & Storage Corporation
    TLP3407SRH Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/1 A, 500 Vrms, S-VSON4T Visit Toshiba Electronic Devices & Storage Corporation
    TLP3412SRHA4 Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 60 V/0.25 A, 300 Vrms, S-VSON16T Visit Toshiba Electronic Devices & Storage Corporation
    TLP241B Toshiba Electronic Devices & Storage Corporation Photorelay (MOSFET output, 1-form-a), 100 V/2.0 A, 5000 Vrms, DIP4 Visit Toshiba Electronic Devices & Storage Corporation

    HEXFRED DIE IN WAFER FORM Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    HF30D120ACE

    Abstract: IRGC15B120KB
    Text: PD - 93875A HF30D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom =15A VF(typ)= 2.05V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits •


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    3875A HF30D120ACE 125mm IRGC15B120KB HF30D120ACE IRGC15B120KB PDF

    HF20A060ACE

    Abstract: IRGBC30MD2
    Text: PD - 2.596 Preliminary HF20A060ACE HF20A060ACE Hexfred Die in Wafer Form 600 V Size 20 5" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max)


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    HF20A060ACE HF20A060ACE IRGBC30MD2 PDF

    HF50C120ACE

    Abstract: hf50c120
    Text: PD - 2.598 Preliminary HF50C120ACE HF50C120ACE Hexfred Die in Wafer Form 1200 V Size 50 5" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max)


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    HF50C120ACE HF50C120ACE hf50c120 PDF

    GA75TS60U

    Abstract: HF50A060ACB
    Text: PD - 2.599 Preliminary HF50A060ACB HF50A060ACB Hexfred Die in Wafer Form 600 V Size 50 5" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max)


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    HF50A060ACB HF50A060ACB GA75TS60U PDF

    hexfred gen3

    Abstract: HF30D120ACE IRGC15B120KB 1200v diode
    Text: PD - 93875A HF30D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom =15A VF(typ)= 2.05V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits •


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    3875A HF30D120ACE 125mm 12-Mar-07 hexfred gen3 HF30D120ACE IRGC15B120KB 1200v diode PDF

    Untitled

    Abstract: No abstract text available
    Text: PD - 94330A HF10D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom =5A VF(typ)= 1.59V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 150mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits • • •


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    4330A HF10D120ACE 150mm IRGB5B120K PDF

    hexfred gen3

    Abstract: typical diode gen3 HF20D120ACE CR diode transient
    Text: PD - 94331A HF20D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V I F nom =8A VF(typ)= 1.85V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits •


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    4331A HF20D120ACE 125mm IRGB8B120K hexfred gen3 typical diode gen3 HF20D120ACE CR diode transient PDF

    HF50A060

    Abstract: GA75TS60U HF50A060ACE
    Text: PD - 2.599-1 Preliminary HF50A060ACE HF50A060ACE Hexfred Die in Wafer Form 600 V Size 50 5" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max)


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    HF50A060ACE HF50A060ACE HF50A060 GA75TS60U PDF

    HF50D120ACE

    Abstract: IRGC50B120KB
    Text: PD - 93877 HF50D120ACE Hexfred Die in Wafer Form Features 1200V IF nom =50A VF(typ)= 1.78V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • •


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    HF50D120ACE 125mm IRGC50B120KB HF50D120ACE IRGC50B120KB PDF

    HF50D120ACE

    Abstract: IRGC50B120KB
    Text: PD - 93877 HF50D120ACE Hexfred Die in Wafer Form Features 1200V IF nom =50A VF(typ)= 1.78V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer • GEN3 Hexfred Technology • Low VF • Low IRR • Low tRR • Soft Reverse Recovery Benefits • • •


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    HF50D120ACE 125mm 12-Mar-07 HF50D120ACE IRGC50B120KB PDF

    HF10D120ACE

    Abstract: No abstract text available
    Text: PD - 94330 HF10D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom =5A VF(typ)= 1.59V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits • •


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    HF10D120ACE 125mm IRGB5B120K HF10D120ACE PDF

    HF10D120ACE

    Abstract: No abstract text available
    Text: PD - 94330A HF10D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom =5A VF(typ)= 1.59V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 150mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits • • •


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    4330A HF10D120ACE 150mm 12-Mar-07 HF10D120ACE PDF

    HF30C120ACB

    Abstract: HFA08PB120
    Text: PD-2.499 TARGET HF30C120ACB HF30C120ACB Hexfred Die in Wafer Form 1200 V Size 30 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) 2.8V Max.


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    HF30C120ACB HF30C120ACB HFA08PB120 HFA08PB120 PDF

    HFA15TB60

    Abstract: HF30A060ACB
    Text: PD-2.500 TARGET HF30A060ACB HF30A060ACB Hexfred Die in Wafer Form 600 V Size 30 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) 1.8V Max.


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    HF30A060ACB HF30A060ACB HFA15TB60 HFA15TB60 PDF

    HF40A060ACB

    Abstract: HFA25TB60
    Text: PD-2.498 TARGET HF40A060ACB HF40A060ACB Hexfred Die in Wafer Form 600 V Size 40 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) 1.6V Max.


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    HF40A060ACB HF40A060ACB HFA25TB60 HFA25TB60 PDF

    HF30C060ACE

    Abstract: HFA15TB60
    Text: PD - 2.608 TARGET HF30C060ACE Hexfred Die in Wafer Form HF30C060ACE 600 V Size 30 5" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) Test Conditions


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    HF30C060ACE HF30C060ACE 115imum HFA15TB60 HFA15TB60 PDF

    HF10A060ACB

    Abstract: HFA08TB60
    Text: PD-2.501 TARGET HF10A060ACB HF10A060ACB Hexfred Die in Wafer Form 600 V Size 10 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) 1.8V Max.


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    HF10A060ACB HF10A060ACB HFA08TB60 PDF

    HFA16PB120

    Abstract: HF40C120ACB
    Text: Previous Datasheet Index Next Data Sheet PD-2.497 TARGET HF40C120ACB HF40C120ACB Hexfred Die in Wafer Form 1200 V Size 40 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current


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    HF40C120ACB HF40C120ACB HFA16PB120 HFA16PB120 PDF

    HF30C120ACB

    Abstract: HFA08PB120
    Text: Previous Datasheet Index Next Data Sheet PD-2.499 TARGET HF30C120ACB HF30C120ACB Hexfred Die in Wafer Form 1200 V Size 30 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current


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    HF30C120ACB HF30C120ACB HFA08PB120 HFA08PB120 PDF

    HF40C120ACB

    Abstract: HFA16PB120
    Text: PD-2.497 TARGET HF40C120ACB HF40C120ACB Hexfred Die in Wafer Form 1200 V Size 40 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) 2.6V Max.


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    HF40C120ACB HF40C120ACB HFA16PB120 HFA16PB120 PDF

    HFA32PB120

    Abstract: HF50C120ACB
    Text: Previous Datasheet Index Next Data Sheet PD-2.496 TARGET HF50C120ACB HF50C120ACB Hexfred Die in Wafer Form 1200 V Size 50 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current


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    HF50C120ACB HF50C120ACB HFA32PB120 PDF

    HFA15TB60

    Abstract: HF30A060ACB
    Text: Previous Datasheet Index Next Data Sheet PD-2.500 TARGET HF30A060ACB HF30A060ACB Hexfred Die in Wafer Form 600 V Size 30 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current


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    HF30A060ACB HF30A060ACB HFA15TB60 HFA15TB60 PDF

    HF40A060ACB

    Abstract: HFA25TB60
    Text: Previous Datasheet Index Next Data Sheet PD-2.498 TARGET HF40A060ACB HF40A060ACB Hexfred Die in Wafer Form 600 V Size 40 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current


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    HF40A060ACB HF40A060ACB HFA25TB60 HFA25TB60 PDF

    HF10A060ACB

    Abstract: HFA08TB60
    Text: Previous Datasheet Index Next Data Sheet PD-2.501 TARGET HF10A060ACB HF10A060ACB Hexfred Die in Wafer Form 600 V Size 10 4" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current


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    HF10A060ACB HF10A060ACB HFA08TB60 PDF