2N7550
Abstract: 2N7549 2n7545 2N7476T1 smd 92112 2N7546 IRHNJ9130SCS 2N7471 2N7426 2N7468
Text: Hi-Rel Products Shortform Hermetic MOSFETs High Voltage MOSFETs for PFC and Primary Switch Applications Hi-Rel Components Schottky and HEXFRED Products Hi-Rel Schottky Diodes Hi-Rel HEXFRED Diodes Hi-Rel Linear and Switching Regulators Fixed Voltage Regulators
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GB05XP120KTPBF
Abstract: No abstract text available
Text: GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses
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GB05XP120KTPbF
E78996
2002/95/EC
18-Jul-08
GB05XP120KTPBF
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HF30D120ACE
Abstract: IRGC15B120KB
Text: PD - 93875A HF30D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom =15A VF(typ)= 2.05V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits •
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3875A
HF30D120ACE
125mm
IRGC15B120KB
HF30D120ACE
IRGC15B120KB
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Untitled
Abstract: No abstract text available
Text: PD - 94330A HF10D120ACE Hexfred Die in Wafer Form Features 1200V IF nom =5A VF(typ)= 1.59V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 150mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits
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4330A
HF10D120ACE
150mm
IRGB5B120K
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DIODE 0536
Abstract: HEXFRED DIODE GB05XP120KTPBF NC301
Text: GB05XP120KTPbF Vishay High Power Products Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses
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GB05XP120KTPbF
E78996
2002/95/EC
18-Jul-08
DIODE 0536
HEXFRED DIODE
GB05XP120KTPBF
NC301
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Untitled
Abstract: No abstract text available
Text: VS-GB05XP120KTPbF www.vishay.com Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses
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VS-GB05XP120KTPbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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hexfred gen3
Abstract: typical diode gen3 HF20D120ACE CR diode transient
Text: PD - 94331A HF20D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V I F nom =8A VF(typ)= 1.85V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits •
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4331A
HF20D120ACE
125mm
IRGB8B120K
hexfred gen3
typical diode
gen3
HF20D120ACE
CR diode transient
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GB05XP120KTPBF
Abstract: No abstract text available
Text: GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses
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Original
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GB05XP120KTPbF
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
GB05XP120KTPBF
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GB15XP120KTPBF
Abstract: GB11
Text: GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses
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GB15XP120KTPbF
E78996
2002/95/EC
11-Mar-11
GB15XP120KTPBF
GB11
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GB15XP120KTPBF
Abstract: gb15xp120kt HEXFRED DIODE
Text: GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses
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GB15XP120KTPbF
E78996
2002/95/EC
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
GB15XP120KTPBF
gb15xp120kt
HEXFRED DIODE
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GB15XP120KTPBF
Abstract: No abstract text available
Text: GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses
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Original
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PDF
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GB15XP120KTPbF
E78996
2002/95/EC
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
GB15XP120KTPBF
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GB05XP120KTPBF
Abstract: No abstract text available
Text: GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses
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Original
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GB05XP120KTPbF
E78996
2002/95/EC
11-Mar-11
GB05XP120KTPBF
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hexfred gen3
Abstract: HF30D120ACE IRGC15B120KB 1200v diode
Text: PD - 93875A HF30D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom =15A VF(typ)= 2.05V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits •
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3875A
HF30D120ACE
125mm
12-Mar-07
hexfred gen3
HF30D120ACE
IRGC15B120KB
1200v diode
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GB15XP120KTPBF
Abstract: diodes jc 817 gb15xp120kt
Text: GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses
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Original
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GB15XP120KTPbF
E78996
2002/95/EC
18-Jul-08
GB15XP120KTPBF
diodes
jc 817
gb15xp120kt
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HF50D120ACE
Abstract: IRGC50B120KB
Text: PD - 93877 HF50D120ACE Hexfred Die in Wafer Form Features 1200V IF nom =50A VF(typ)= 1.78V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits
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HF50D120ACE
125mm
IRGC50B120KB
HF50D120ACE
IRGC50B120KB
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HF50D120ACE
Abstract: IRGC50B120KB
Text: PD - 93877 HF50D120ACE Hexfred Die in Wafer Form Features 1200V IF nom =50A VF(typ)= 1.78V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits
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Original
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HF50D120ACE
125mm
12-Mar-07
HF50D120ACE
IRGC50B120KB
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HF10D120ACE
Abstract: No abstract text available
Text: PD - 94330 HF10D120ACE Hexfred Die in Wafer Form Features • • • • • 1200V IF nom =5A VF(typ)= 1.59V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits • •
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HF10D120ACE
125mm
IRGB5B120K
HF10D120ACE
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GB05XP120KTPBF
Abstract: No abstract text available
Text: GB05XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 5 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses
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Original
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PDF
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GB05XP120KTPbF
E78996
2002/95/EC
11-Mar-11
GB05XP120KTPBF
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GB15XP120KTPBF
Abstract: No abstract text available
Text: GB15XP120KTPbF Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses
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Original
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GB15XP120KTPbF
E78996
2002/95/EC
11-Mar-11
GB15XP120KTPBF
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VS-GB15XP120KTPBF
Abstract: No abstract text available
Text: VS-GB15XP120KTPbF www.vishay.com Vishay Semiconductors Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses
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Original
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PDF
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VS-GB15XP120KTPbF
E78996
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
VS-GB15XP120KTPBF
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gb15xp120kt
Abstract: GB15XP120KTPBF 93913
Text: GB15XP120KTPbF Vishay High Power Products Three Phase Inverter Module in MTP Package 1200 V NPT IGBT and HEXFRED Diodes, 15 A FEATURES • Generation 5 NPT 1200 V IGBT technology • HEXFRED® diode with ultrasoft reverse recovery • Very low conduction and switching losses
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Original
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GB15XP120KTPbF
E78996
2002/95/EC
18-Jul-08
gb15xp120kt
GB15XP120KTPBF
93913
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HF10D120ACE
Abstract: No abstract text available
Text: PD - 94330A HF10D120ACE Hexfred Die in Wafer Form Features 1200V IF nom =5A VF(typ)= 1.59V @ IF(nom) @ 25°C Motor Control Antiparallel Diode 150mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits
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Original
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4330A
HF10D120ACE
150mm
12-Mar-07
HF10D120ACE
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IRGPS40B120U
Abstract: HF70E120ACE
Text: PD - 94715 HF70E120ACE Hexfred Die in Wafer Form Features 1200V IF nom = 75A VF(typ)= 2.3V @ IF(nom) @ 25°C Power Supply Antiparallel Diode 125mm Wafer GEN3 Hexfred Technology Low VF Low IRR Low tRR Soft Reverse Recovery Benefits Benchmark Efficiency for UPS and Welding
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Original
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HF70E120ACE
125mm
12-Mar-07
IRGPS40B120U
HF70E120ACE
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HFA16TB60
Abstract: HFA20TB120 FA08TB60 hfa16tb60c HFA15TB60 Telex-95219
Text: International [ « ] Rectifier i r ylPPUCKTION NOTES PUBLISHED BY INTERNATIONAL RECTIFIER. 233 KANSAS STREET. EL SEGUNDO. CA 90245 310 322-3331 AN-993 Utilizing HEXFRED Ultra-Fast Recovery Diode Die In Assembly (HEXFRED is a trademark of International Rectifier)
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AN-993
HFA16TB60
HFA20TB120
FA08TB60
hfa16tb60c
HFA15TB60
Telex-95219
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