4312 020 36640
Abstract: SOT121B SOT121 BLW97 PHILIPS 4312 amplifier TRANSISTOR blw97 3 pin TRIMMER capacitor 3 pin trimmer capacitors
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product specification August 1986 Philips Semiconductors Product specification HF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A, AB and B operated high-power
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BLW97
4312 020 36640
SOT121B
SOT121
BLW97
PHILIPS 4312 amplifier
TRANSISTOR blw97
3 pin TRIMMER capacitor
3 pin trimmer capacitors
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BD443
Abstract: MGP540 BD228 BLW77 MGP523 RF POWER TRANSISTOR NPN vhf philips ceramic disc capacitors 1500 pf
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW77 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power
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BLW77
BD443
MGP540
BD228
BLW77
MGP523
RF POWER TRANSISTOR NPN vhf
philips ceramic disc capacitors 1500 pf
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BLW96 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power
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BLW96
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PR37
Abstract: PR37 RESISTOR BLW96 philips blw96 BLW96 HF power amplifier PHILIPS 4312 amplifier trimmer 3-30 pf amplifier blw96 MGP700 727 Transistor power values
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW96 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated high power
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BLW96
PR37
PR37 RESISTOR
BLW96
philips blw96
BLW96 HF power amplifier
PHILIPS 4312 amplifier
trimmer 3-30 pf
amplifier blw96
MGP700
727 Transistor power values
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BD443
Abstract: BLW76 BD228 philips polystyrene capacitor MGP501
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB or class-B operated high power
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BLW76
BD443
BLW76
BD228
philips polystyrene capacitor
MGP501
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TRANSISTOR blw97
Abstract: MGP705 4312 020 36640 BLW97 transistor d1 391 MLA876 SOT121B 101 Ceramic Disc Capacitors
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW97 HF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor designed for use in class-A,
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BLW97
SC08a
TRANSISTOR blw97
MGP705
4312 020 36640
BLW97
transistor d1 391
MLA876
SOT121B
101 Ceramic Disc Capacitors
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BLW50F
Abstract: PHILIPS 4312 amplifier SOT123 Package HF power amplifier 4312 020 36640 MGP472
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW50F HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in
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BLW50F
SC08a
BLW50F
PHILIPS 4312 amplifier
SOT123 Package
HF power amplifier
4312 020 36640
MGP472
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PDF
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4312 020 36640
Abstract: BLW86 HF power amplifier ferroxcube wideband hf choke PHILIPS 4312 amplifier BY206 BY206 diode SOt123 Package 22 pf trimmer capacitor datasheet 4 carbon wire resistor
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,
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BLW86
SC08a
4312 020 36640
BLW86
HF power amplifier
ferroxcube wideband hf choke
PHILIPS 4312 amplifier
BY206
BY206 diode
SOt123 Package
22 pf trimmer capacitor datasheet
4 carbon wire resistor
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BLW96
Abstract: PR37 RESISTOR RESISTOR pr37 MGP700 BLW96 HF power amplifier SOT121B
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW96 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A,
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BLW96
SC08a
BLW96
PR37 RESISTOR
RESISTOR pr37
MGP700
BLW96 HF power amplifier
SOT121B
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BLW50F
Abstract: PHILIPS 4312 amplifier power amplifier handbook ceramic capacitor philips 561 ferroxcube wideband hf choke
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW50F HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor primarily intended for use in class-A, AB and B operated, industrial
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BLW50F
BLW50F
PHILIPS 4312 amplifier
power amplifier handbook
ceramic capacitor philips 561
ferroxcube wideband hf choke
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PDF
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BLW83
Abstract: philips carbon film resistor BY206 BD204 RF amplifiers in the HF and VHF
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW83 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor for use in transmitting amplifiers operating in the h.f. and
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BLW83
BLW83
philips carbon film resistor
BY206
BD204
RF amplifiers in the HF and VHF
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Philips polystyrene capacitors
Abstract: capacitor polyester philips HF power amplifier MGP502 push pull class AB RF linear MGP501 Philips polystyrene capacitor BLW76 class A push pull power amplifier transistor w 04 59
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW76 HF/VHF power transistor Product specification File under Discrete Semiconductors, SC08a August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-AB
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BLW76
SC08a
Philips polystyrene capacitors
capacitor polyester philips
HF power amplifier
MGP502
push pull class AB RF linear
MGP501
Philips polystyrene capacitor
BLW76
class A push pull power amplifier
transistor w 04 59
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BY206
Abstract: blw86 4312 020 36640 HF power amplifier PHILIPS 4312 amplifier
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW86 HF/VHF power transistor Product specification August 1986 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, AB and B operated h.f. and v.h.f.
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BLW86
BY206
blw86
4312 020 36640
HF power amplifier
PHILIPS 4312 amplifier
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BLW85
Abstract: gp550 SOt123 Package TP200
Text: DISCRETE SEMICONDUCTORS DATA SHEET BLW85 HF/VHF power transistor Product specification March 1993 Philips Semiconductors Product specification HF/VHF power transistor DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-A, B and C operated mobile h.f. and
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BLW85
BLW85
gp550
SOt123 Package
TP200
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2SC3770
Abstract: ITR05889 ITR05890 ITR05891 ITR05892 ITR05893 marking JY
Text: Ordering number:ENN2095A NPN Epitaxial Planar Silicon Transistor 2SC3770 UHF, VHF Oscillator Mixer, HF Amplifier Applications Applications Package Dimensions • UHF/VHF frequency converters, local oscillators, HF amplifiers. unit:mm 2018B [2SC3770] · High power gain : PG=15dB typ f=0.4GHz .
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ENN2095A
2SC3770
2018B
2SC3770]
2SC3770
ITR05889
ITR05890
ITR05891
ITR05892
ITR05893
marking JY
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2SC3771
Abstract: ITR05896 ITR05897 ITR05898 ITR05899 ITR05900
Text: Ordering number:ENN1944B NPN Epitaxial Planar Silicon Transistor 2SC3771 UHF, VHF Oscillator Mixer, HF Amplifier Applications Applications Package Dimensions • UHF/VHF frequency converters, local oscillators, HF amplifiers. unit:mm 2018B [2SC3771] · High power gain : PG=10dB typ f=0.9GHz .
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ENN1944B
2SC3771
2018B
2SC3771]
2SC3771
ITR05896
ITR05897
ITR05898
ITR05899
ITR05900
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PDF
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Untitled
Abstract: No abstract text available
Text: Ordering number:ENN1944B NPN Epitaxial Planar Silicon Transistor 2SC3771 UHF, VHF Oscillator Mixer, HF Amplifier Applications Applications Package Dimensions • UHF/VHF frequency converters, local oscillators, HF amplifiers. unit:mm 2018B [2SC3771] · High power gain : PG=10dB typ f=0.9GHz .
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ENN1944B
2SC3771
2018B
2SC3771]
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NTE315
Abstract: 10MHZ
Text: NTE315 Silicon NPN Transistor, Medium Power Amp Features: D AF – HF Medium Power Amplifier Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector–to–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V
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NTE315
100mA
10MHZ
NTE315
10MHZ
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uhf amp circuit diagrams
Abstract: marking JY 2095 FL 2SC3770 JY marking transistor 2095A marking u4j
Text: Ordering number :EN2095A ;_ 2SC3770 No.2095A NPN Epitaxial Planar Silicon Transistor UHF, VHF Oscillator, Mixer, HF Amp Applications Applications . UHF/VHF frequency converters, local oscillators, HF amplifiers Features . High power gain: PG=15dB typ f=0.4GHz .
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2SC3770
uhf amp circuit diagrams
marking JY
2095 FL
2SC3770
JY marking transistor
2095A
marking u4j
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR tiEM'iñe'J 0017bfi0 Mbl NPN EPITAXIAL PLANAR T Y P E DISCRIPTION OUTLINE DRAWING 2SC3241 is a silicon NPN epitaxial planar type transistor specifically designed for high power amplifiers in HF band. Dimensions in mm FEATU RES
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0017bfi0
2SC3241
30MHz,
15-j1
2SC3241
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR DG17S24 7S1 2SC1944 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC1944 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers on HF bandmobile radio applications. Dimension in mm 9.1 ± 0 . 7
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DG17S24
2SC1944
2SC1944
27MHz,
27MHz
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2097 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2097 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Dimensions in mm R1 FEATURES •
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OCR Scan
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2SC2097
2SC2097
30MHz
30MHz,
2k3k5k10k
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2SC1969
Abstract: No abstract text available
Text: MITSUBISHI RF POWER TRANSISTOR 2SC1969 NPN EPITAXIAL PLANAR TY PE DESCRIPTION OUTLINE DRAWING 2SC1969 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers on HF band mobile radio applications. 9.1 ± 0 .7 FEATURES Dimensions i'
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OCR Scan
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2SC1969
2SC1969
27MHz
O-220
27MHz.
150mA
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2SC2086
Abstract: 50S5 transistor U4 NPN Silicon Epitaxial Planar Transistor to92 2sc2086 transistor
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2086 NPN EPITAXIAL PLANAR TYPE DESCRIPTION OUTLINE DRAWING 2SC2086 is a silicon NPN epitaxial planar type transistor designed for RF power amplifiers in HF band mobile radio applications. Dimensions in mm 05.1 M A X FEATURES
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OCR Scan
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2SC2086
2SC2086
27MHz
50S5
transistor U4
NPN Silicon Epitaxial Planar Transistor to92
2sc2086 transistor
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