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    HF30C120ACE Search Results

    HF30C120ACE Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HF30C120ACE International Rectifier Hexfred Die in Wafer Form Original PDF

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    Untitled

    Abstract: No abstract text available
    Text: Preliminary Data Sheet PD-20502 rev. B 2/04 HF30C120ACE Hexfred Die in Wafer Form 1200 V Size 30 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original
    PDF PD-20502 HF30C120ACE 150mm, HFA08PB120

    HF30C120ACE

    Abstract: HFA08PB120 PD-20502
    Text: Preliminary Data Sheet PD-20502 rev. A 11/98 HF30C120ACE Hexfred Die in Wafer Form 1200 V Size 30 5" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original
    PDF PD-20502 HF30C120ACE 125mm, HFA08PB120 HF30C120ACE HFA08PB120

    HF30C120ACE

    Abstract: HFA08PB120
    Text: Preliminary Data Sheet PD-20502 rev. B 2/04 HF30C120ACE Hexfred Die in Wafer Form 1200 V Size 30 6" Wafer Electrical Characteristics Wafer Form Parameter V FM BV R IRM Description Forward Voltage Reverse Breakdown Voltage Reverse Leakage Current Guaranteed (Min/Max)


    Original
    PDF PD-20502 HF30C120ACE 12-Mar-07 HF30C120ACE HFA08PB120

    HF30C120ACE

    Abstract: HFA08PB120
    Text: PD - 2.502 TARGET HF30C120ACE HF30C120ACE Hexfred Die in Wafer Form 1200 V Size 30 5" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current Guaranteed (Min/Max) 2.8V Max.


    Original
    PDF HF30C120ACE HF30C120ACE HFA08PB120

    HF30C120ACE

    Abstract: HFA08PB120
    Text: Previous Datasheet Index Next Data Sheet PD - 2.502 TARGET HF30C120ACE HF30C120ACE Hexfred Die in Wafer Form 1200 V Size 30 5" Wafer Electrical Characteristics Wafer Form Parameter Description VFM Forward Voltage BVR Reverse Breakdown Voltage IRM Reverse Leakage Current


    Original
    PDF HF30C120ACE HF30C120ACE HFA08PB120

    IN1190A diode

    Abstract: an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 IN1190 DT93-1 HFA16PB120
    Text: Revised 5/11/99 www.irf.com Rectifiers / Thyristors Catalog of Available Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series


    Original
    PDF 1N1183 IN1190 1N1183A IN1190A 1N1199A 1N1206A 1N2054 1N2068 1N3085 -1N3092 IN1190A diode an 80771 hfa30pa60 SCR gate drive circuit A6F diode HFA120FA60 HF50A060 DT93-1 HFA16PB120

    SCR gate drive circuit

    Abstract: an 80771 IN1190 IN1190A IN1190A diode 20509 Diode 31DQ HFA25TB60 SD400N IR 31DQ 03
    Text: Revised 8/27/98 www.irf.com Rectifiers / Thyristors Catalog of Availble Documents IR ProCenter Fax-On-Demand 310 252-7100 Standard Recovery Diodes Description Datasheets 1N1183 - IN1190 Series 1N1183A - IN1190A Series 1N1199A - 1N1206A Series 1N2054 thru 1N2068 Series


    Original
    PDF 1N1183 IN1190 1N1183A IN1190A 1N1199A 1N1206A 1N2054 1N2068 1N3085 -1N3092 SCR gate drive circuit an 80771 IN1190A diode 20509 Diode 31DQ HFA25TB60 SD400N IR 31DQ 03

    Hexfred Die in Wafer Form

    Abstract: No abstract text available
    Text: Preliminary D a ta sh e e t PD-20502 rev. A 11/98 International IQR Rectifier HF30C120ACE Hexfred Die in W afer Form 1200 V Size 30 5" W afer Electrical Characteristics Wafer Form Parameter Description Guaranteed (Min/Max) Test Conditions V fm Forw ard Voltage


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    PDF PD-20502 HF30C120ACE 125mm, HFA08PB120 635TOLERANCE Hexfred Die in Wafer Form