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    HFE 4012 Search Results

    HFE 4012 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LPD4012-103MLB Coilcraft Inc General Purpose Inductor, 10uH, 20%, 2 Element, Ferrite-Core, SMD, 1616, CHIP, 1616, ROHS COMPLIANT Visit Coilcraft Inc
    LPD4012-154MLB Coilcraft Inc General Purpose Inductor, 150uH, 20%, 2 Element, Ferrite-Core, SMD, 1616, CHIP, 1616, ROHS COMPLIANT Visit Coilcraft Inc
    LPD4012-331NLB Coilcraft Inc General Purpose Inductor, 0.33uH, 30%, 2 Element, Ferrite-Core, SMD, 1616, CHIP, 1616, ROHS COMPLIANT Visit Coilcraft Inc
    LPD4012-473MLB Coilcraft Inc General Purpose Inductor, 47uH, 20%, 2 Element, Ferrite-Core, SMD, 1616, CHIP, 1616, ROHS COMPLIANT Visit Coilcraft Inc
    LPD4012-682MLB Coilcraft Inc General Purpose Inductor, 6.8uH, 20%, 2 Element, Ferrite-Core, SMD, 1616, CHIP, 1616, ROHS COMPLIANT Visit Coilcraft Inc

    HFE 4012 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HFE4012BP Unknown The CMOS Device Manual (Japanese) 1993 Scan PDF

    HFE 4012 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    JANS2N2484

    Abstract: JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373
    Text: JANS QUALIFIED BI-POLAR TRANSISTORS* Part # JANS QUALIFIED BI-POLAR TRANSISTORS* Type Voltage hFE @ Ic Rated Ic Package JANS QUALIFIED BI-POLAR TRANSISTORS* JANS QUALIFIED BI-POLAR TRANSISTORS* Part # Slash Sheet Type Voltage hFE @ Ic Rated Ic Package JANS2N930


    Original     		PDF JANS2N930 JANS2N930UB JANS2N2218 JANS2N2218A JANS2N2218AL JANS2N2219 JANS2N2219A JANS2N2219AL JANS2N2221A JANS2N2221AL JANS2N2484 JANS2N3439UA JANS2N3637 transistors SMD npn JANS2N5339U3 JANS2N7373

    2SA572

    Abstract: 2SC1006 2SC696 2SC708 2SC984 2SC708A 2SC734 equivalent 2SC680 2SA518 datasheet 2sa564
    Text: Electrical characteristics Ta=25ºC Tj DC Current Gain hFE fab/ft* Cob VCE Ic (ºC) (MHz) (pF) (V) (mA) 175 70 -1 -10 200* 10 40125 -1 -120 >50 8 240 30175 -2 -150 80* 22 300 30175 -2 -150 80* 22 300 40125 -2 -50 100* 20 240 85 300* 1 85 250* 1 85 200* 1


    Original     		PDF 2SA501 2SA502 2SA503 2SA504 2SA505 2SA506 2SA507 2SA508 2SA509 2SC828 2SA572 2SC1006 2SC696 2SC708 2SC984 2SC708A 2SC734 equivalent 2SC680 2SA518 datasheet 2sa564

    Untitled

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150G2YL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: hFE=100 Min. (Ic=150A) . Low Saturation Voltage


    OCR Scan     		PDF MG150G2YL1

    mg15h6

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain : hFE=100 Min.


    OCR Scan     		PDF MG15H6EL1 mg15h6

    MG300M1UK1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG300M1UK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain: hFE=100 Min. (Ic=300A) . Low Saturation Voltage


    OCR Scan     		PDF MG300M1UK1 MG300M1UK1

    MG300M1UK1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG300M1UK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector Is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain: hFE= 100 Min. (Ic=300A) . Low Saturation Voltage


    OCR Scan     		PDF MG300M1UK1 MG300M1UK1

    MG15G1AL3

    Abstract: MG15G1AL3 equivalent mg15g1 mg15g MG15G1AL
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG15G1AL3 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-In Free Wheeling Diode. . High DC Current Gain : hFE=100 Min. (Ic=15A)


    OCR Scan     		PDF MG15G1AL3 MG15G1AL3 MG15G1AL3 equivalent mg15g1 mg15g MG15G1AL

    MG150G2YL1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150G2YL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: hFE= 100 Min. (Ic-150A) . Low Saturation Voltage


    OCR Scan     		PDF MG150G2YL1 Ic-150A) MG150G2YL1

    MG50N2Yk1

    Abstract: bth 100
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE -MG50N2YK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=50A)


    OCR Scan     		PDF -MG50N2YK1 MG50N2Yk1 bth 100

    mg15n6ek1

    Abstract: No abstract text available
    Text: GTR MODULE MG15N6EK1 SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolation from Case. . 6 Power Transistors and 6 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain : hFE=100 Min. (IC=15A)


    OCR Scan     		PDF MG15N6EK1 mg15n6ek1

    MG100H2CL1

    Abstract: ic 741 free MG100H2CL
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100H2CL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 2-05,3±Ol5 FEATURES : . The Collector is Isolated from Case. . With Built-in Free Wheeling Diodes . High DC Current Gain : hFE= 80 Min. (Ic=100A)


    OCR Scan     		PDF MG100H2CL1 T-jS125` MG100H2CL1 ic 741 free MG100H2CL

    MG400H1UL1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG400H1UL1 HIGH POWER SWITCHING APPLICATIONS. M O TOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Whe-eling Diode . High DC Current Gain : hFE=80 Min. (IC=400A) . Low Saturation Voltage


    OCR Scan     		PDF MG400H1UL1 00A/iis MG400H1UL1

    mg100g2yl1

    Abstract: VA1C mg100g
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100G2YL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm M OTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: hFE= 1 0 0 Min. (1 q = 100A)


    OCR Scan     		PDF MG100G2YL1 mg100g2yl1 VA1C mg100g

    MG100H2CK1

    Abstract: mg100h2ck MG100H2
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100H2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case . With Built-in Free Wheeling Diodes . High DC Current Gain : hFE=200 Min. (IC=100A) . Low Saturation Voltage: VcE(sat)= 2 .5V(Max.)


    OCR Scan     		PDF MG100H2CK1 G100H2CK1 MG100H2CK1 mg100h2ck MG100H2

    MG100M2YK1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100M2YK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=100A


    OCR Scan     		PDF MG100M2YK1 MG100M2YK1

    MG50M2CK2

    Abstract: No abstract text available
    Text: MG50M2CK2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Ioslation from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain : hfE=100 Min. (Ic=50A)


    OCR Scan     		PDF MG50M2CK2 MG50M2CK2

    MG40S2YK1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG40S2YK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain : hFE=100 Min. (I c =40A)


    OCR Scan     		PDF MG40S2YK1 MG40S2YK1

    U1W npn

    Abstract: NPN VCEo 1000V transistor yk
    Text: MG75M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain : hFE=100 Min. (Ic=75A)


    OCR Scan     		PDF MG75M2YK1 U1W npn NPN VCEo 1000V transistor yk

    D1758

    Abstract: Transistor d1758 2SD1758F5 d1758 transistor 2SD1758
    Text: 2SD1758F5 Transistor, NPN Features Dimensions Units : mm available in CPT F5 (SC-63) package • package marking: D1758^Q, where ★ is hFE code and □ is lot number • general purpose transistor with ratings as follows: — v c e o = 32 2SD1758F5 (CPT F5)


    OCR Scan     		PDF 2SD1758F5 SC-63) D1758 2SD1758F5 temperature00 2SD1758 Transistor d1758 d1758 transistor

    MG15H1AL1

    Abstract: NPN Transistor 1.5A 600V
    Text: G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG15H1AL1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . The Collector Is Isolated from Case. . With Built-in Free Wheeling Diode. . High DC Current: Gain : hFE=100 Min. (Ic=15A) . Low Saturation Voltage : VcE(sat)=2V(Max.) (Ic=15A)


    OCR Scan     		PDF MG15H1AL1 MG15H1AL1 NPN Transistor 1.5A 600V

    MG150M2YK1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150M2YK1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. 2 . Power Transistors and Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=150A


    OCR Scan     		PDF MG150M2YK1 00A/ys MG150M2YK1

    MG150G2DL1

    Abstract: No abstract text available
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150G2DL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. 158±Q5 4.-#&4±tl3 6-MS . The Collector is Isolated from Case . With Built-in Free Wheeling Diode . High DC Current Gain: hFE= 100 Min. (Ic=150A)


    OCR Scan     		PDF MG150G2DL1 2-98C1A H005Q01 MG150G2DL1

    MG50G2CL3

    Abstract: Mg50G2cl mg50g2
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in ram MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=50A)


    OCR Scan     		PDF MG50G2CL3 MG50G2CL3 Mg50G2cl mg50g2

    2N3638

    Abstract: 2N4121 2N4945 TO-106 2N4122 SE1001 2N5855
    Text: TRANSISTORS—SMALL SIGNAL NPN GENERAL PURPOSE AMPLIFIER AND SWITCHING TRANSISTORS BY ASCENDING VCEO PLASTIC PACKAGE Continued (ALSO SEE LOW LEVEL AN D HIGH VOLTAGE SECTION) V CEO SZ cc LU O > (hfe) LU LL V CE(sat) Cob fT PD ^off MHz ns mA MAX MIN MAX mW


    OCR Scan     		PDF 2N4969 2N3641 2N4436 EN697 MPSA10 MPSA20 2N3904 2N3903 EN3903 MPS6531 2N3638 2N4121 2N4945 TO-106 2N4122 SE1001 2N5855