TFSM
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC4074F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=120~400. 3 K ・Thin Fine Pitch Small Package.
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KTC4074F
KTA2013F.
100mA,
TFSM
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KTC4074F
Abstract: No abstract text available
Text: SEMICONDUCTOR KTC4074F TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES E ・Excellent hFE Linearity B : hFE 0.1mA /hFE(2mA)=0.95(Typ.). ・High hFE : hFE=120~400. D 3 K ・Thin Fine Pitch Small Package.
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KTC4074F
KTA2013F.
KTC4074F
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2SC4738FV
Abstract: MARKING LY toshiba 2SA1832FV
Text: 2SC4738FV TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FV Audio Frequency General Purpose Amplifier Applications High hFE: hFE = 120 ~ 400 Excellent hFE Linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • Complementary to 2SA1832FV
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2SC4738FV
2SA1832FV
2SC4738FV
MARKING LY toshiba
2SA1832FV
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HN1B26FS
Abstract: No abstract text available
Text: HN1B26FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1B26FS General-Purpose Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 • High hFE : hFE = 120~400 0.35 0.35 Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
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HN1B26FS
HN1B26FS
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2SC2713
Abstract: 2SA1163
Text: 2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2713 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700
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2SC2713
2SA1163
2SC2713
2SA1163
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Untitled
Abstract: No abstract text available
Text: HN1B26FS TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1B26FS General-Purpose Amplifier Applications Unit: mm 1.0±0.05 : hFE = 120~400 6 2 5 3 4 Excellent hFE linearity : hFE (IC = −0.1 mA)/hFE (IC = −2 mA) = −0.95 (typ.) • High hFE
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HN1B26FS
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2SC2713
Abstract: 2SA1163
Text: 2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700
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2SC2713
2SA1163
2SC2713
2SA1163
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2sc4117
Abstract: 2SA1587
Text: 2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4117 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = 120 V · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) · High hFE: hFE = 200~700
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2SC4117
2SA1587
2sc4117
2SA1587
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2Sc2713
Abstract: 2SA1163
Text: 2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2713 Audio Frequency General Purpose Amplifier Applications • High voltage: VCEO = 120 V · Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) · High hFE: hFE = 200~700
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2SC2713
2SA1163
2Sc2713
2SA1163
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700
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2SC2713
2SA1163
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KTA2013V
Abstract: KTA2013 Transistor hFE CLASSIFICATION Marking CE KTC4074V
Text: SEMICONDUCTOR KTC4074V TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. E FEATURES B Excellent hFE Linearity : hFE 0.1mA /hFE(2mA)=0.95(Typ.). G A 1 3 K H Low Collector-to-Emitter Saturation Voltage. D 2 High hFE : hFE=120~400.
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KTC4074V
KTA2013V.
KTA2013V
KTA2013
Transistor hFE CLASSIFICATION Marking CE
KTC4074V
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2SA1587
Abstract: 2SC4117
Text: 2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700
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2SC4117
2SA1587
2SA1587
2SC4117
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2SC4117
Abstract: No abstract text available
Text: 2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200 to 700
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2SC4117
2SA1587
2SC4117
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2SC2713
Abstract: 2SA1163
Text: 2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700
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2SC2713
2SA1163
2SC2713
2SA1163
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Untitled
Abstract: No abstract text available
Text: 2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3324 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) Unit: mm = 0.95 (typ.) • High hFE: hFE = 200~700
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2SC3324
2SA1312
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2SC3324
Abstract: 2SA1312
Text: 2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3324 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V · Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) Unit: mm = 0.95 (typ.) · High hFE: hFE = 200~700
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2SC3324
2SA1312
2SC3324
2SA1312
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC2713 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2713 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200 to 700
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2SC2713
2SA1163
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3324 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) Unit: mm = 0.95 (typ.) • High hFE: hFE = 200 to 700
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2SC3324
2SA1312
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PDF
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Untitled
Abstract: No abstract text available
Text: 2SC4117 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4117 Audio Frequency General Purpose Amplifier Applications Unit: mm • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE: hFE = 200~700
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2SC4117
2SA1587
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PDF
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2SC3324
Abstract: 2SA1312
Text: 2SC3324 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3324 Audio Frequency Low Noise Amplifier Applications • High voltage: VCEO = 120 V • Excellent hFE linearity: hFE (IC = 0.1 mA)/ hFE (IC = 2 mA) Unit: mm = 0.95 (typ.) • High hFE: hFE = 200~700
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2SC3324
2SA1312
2SC3324
2SA1312
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2sc4738ft
Abstract: 2SA1832FT
Text: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
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2SC4738FT
2SA1832FT
2sc4738ft
2SA1832FT
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2sc4738ft
Abstract: 2SA1832FT IC5010
Text: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
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2SC4738FT
2SA1832FT
2sc4738ft
2SA1832FT
IC5010
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Untitled
Abstract: No abstract text available
Text: 2SC4738FT TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC4738FT Audio Frequency General Purpose Amplifier Applications • High Voltage: VCEO = 50 V • High Current: IC = 150 mA (max) • High hFE: hFE = 120 to 400 • Excellent hFE Linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
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2SC4738FT
2SA1832FT
961001EAA1
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2SA1049
Abstract: 2SC2459 transistor 2sc2459
Text: 2SC2459 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC2459 Audio Amplifier Applications Unit: mm • High breakdown voltage: VCEO = 120 V (max) • High DC current gain: hFE = 200~700 • Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
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2SC2459
2SA1049.
2SA1049
2SC2459
transistor 2sc2459
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