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    HFE-200 TO-220 NPN Search Results

    HFE-200 TO-220 NPN Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198 Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    HFE-200 TO-220 NPN Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    BT3904

    Abstract: BC850B2
    Text: NPN Transistors NPN S ilicon T ransisto rs TO-236 Plastic Package Type Marking Code V ceo hFE Volts 100-250 160-400 250-600 100-250 160-400 250-600 110-220 200-450 110-220 200-450 420-800 110-220 200-450 420-800 200-450 420-800 200-450 420-800 fr I ces VcEsat


    OCR Scan     		O-236 BC817-16 BC817-25 BC817-40 BC818-16 BC818-25 BC818-40 BC846A BC846B BC847A BT3904 BC850B2 PDF

    2sb834 transistor

    Abstract: No abstract text available
    Text: 2SB834 PNP TO-220 Transistor TO-220 1. BASE 2. COLLECTOR 1 Features 2 3. EMITTER 3 — Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A — DC current Gain hFE =60-200@ IC=0.5A — Complementary to NPN 2SD880 MAXIMUM RATINGS (TA=25℃ unless otherwise noted)


    Original     		2SB834 O-220 O-220 2SD880 -50mA -500mA -500mA, 2sb834 transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB834 TRANSISTOR PNP TO—220 FEATURES z Low Collector -Emitter Saturation Voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A z DC current Gain hFE =60-200@ IC=0.5A z Complementary to NPN 2SD880


    Original     		O-220 2SB834 2SD880 -500mA -500mA, PDF

    Untitled

    Abstract: No abstract text available
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB834 TRANSISTOR PNP TO—220 1. BASE FEATURES z Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A z DC current Gain hFE =60-200@ IC=0.5A


    Original     		O-220 2SB834 2SD880 -500mA -500mA, PDF

    2SB834

    Abstract: 2sb834 transistor 2SD880 2sD880 TRANSISTOR
    Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220 Plastic-Encapsulate Transistors 2SB834 TRANSISTOR PNP TO—220 1. BASE FEATURES z Low Collector -emitter saturation voltage VCE(sat)=1.0v(Max)@ IC=-3A,IB=-0.3A z DC current Gain hFE =60-200@ IC=0.5A


    Original     		O-220 2SB834 O--220 2SD880 -500mA -500mA, 2SB834 2sb834 transistor 2SD880 2sD880 TRANSISTOR PDF

    transistor d325

    Abstract: B511 transistor 3DD325 B511 TIP31c PNP Transistor D325 D325 transistor 3CD511 3a npn to220 transistor npn transistor 3A
    Text: TRANSISTOR TO-220 PLASTIC-ENCAPSULATE BIPOLAR TRANSISTOR HFE PC I C B vcbo B vceo mW (mA) (V) (V) MIN MAX I C (mA) V ce (sat) V ce (V) (V) IC (mA) Ib (mA) fT (MHz) PIN ARRAY SUBSTITUTE TYPE 5 BCE 2SD880 50 BCE 3DD325 200 -500 -3 -1 -1500 -150 50 BCE 3CD511


    Original     		O-220 2SD880 3DD325 3CD511 2SB834 TIP31C TIP32C TIP41C TIP42C transistor d325 B511 transistor 3DD325 B511 TIP31c PNP Transistor D325 D325 transistor 3CD511 3a npn to220 transistor npn transistor 3A PDF

    TRANSISTOR BC 448 smd

    Abstract: JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A
    Text: SELECTION GUIDE NPN PNP NPN/PNP NPN PNP Leaded Leaded SMD SMD SMD page page page page page 38 41 44 44 45 46 47 48 48 48 General purpose amplification and switching transistors Low-power transistors 17 Transistor arrays 22 Medium-power transistors 23 24 Power transistors


    OCR Scan     		BRY61 BRY62 OT143B TRANSISTOR BC 448 smd JA101P smd transistor npn 491 transistor TO-92 bc108 transistor pn2222 BC853B transistor MPSA77 jc5010 215 BC307 smd 2PB601A PDF

    BC848 equivalent

    Abstract: bc847 X10-4 BC849C-2C spice bc847 BC846B BC847A BC847C BC848A BC848C
    Text: SOT23 NPN SILICON PLANAR GENERAL PURPOSE TRANSISTORS BC846 BC848 BC850 ISSUE 6 - JANUARY 1997 PARTMARKING DETAILS BC847 BC849 COMPLEMENTARY TYPES BC846A–Z1A BC848B–1K BC846 BC856 BC846B–1B BC848C–Z1L BC847 BC857 BC847A–Z1E BC849B–2B BC848 BC858 BC847B–1F


    Original     		BC846 BC848 BC850 BC847 BC849 BC846AZ1A BC848B1K BC856 BC846B1B BC848 equivalent bc847 X10-4 BC849C-2C spice bc847 BC846B BC847A BC847C BC848A BC848C PDF

    SO930

    Abstract: SO918 BSX28 BCW67B SOT-223 SO5400 low noise transistors vhf So642 2n2222a SOT223 BCY70 bfx40
    Text: TRANSISTORS SMALL SIGNAL TO-18 TO-39 TO-72 SOT-223 TO-126/SOT-32 SOT-23 TRANSISTORS FOR RADIO FREQUENCY APPLICATIONS Max rating Polarity VCEO V NPN NPN NPN PNP PNP NPN NPN NPN NPN NPN NPN NPN NPN NPN 15 12 15 25 25 25 25 20 30 15 15 20 30 20 IC Type Ptot


    Original     		O-126/SOT-32 OT-223 OT-23 2N2857 2N5179 BFX89 BFR99A BFR99 BFW16A BFW17A SO930 SO918 BSX28 BCW67B SOT-223 SO5400 low noise transistors vhf So642 2n2222a SOT223 BCY70 bfx40 PDF

    power 22E

    Abstract: BCX70GR TRANSISTOR AH BCX70 BCX70G BCX70H BCX70HR BCX70J BCX70JR BCX70K
    Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTOR BCX70 BCX70 ISSUE 2 – FEBRUARY 95 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER SYMBOL MIN. TYP. Collector-Emitter Breakdown Voltage V(BR)CEO 45 5 Emitter-Base Breakdown Voltage


    Original     		BCX70 BCX70G 150oC 200Hz power 22E BCX70GR TRANSISTOR AH BCX70 BCX70G BCX70H BCX70HR BCX70J BCX70JR BCX70K PDF

    h12e

    Abstract: BCW60DR CR SOT23 power 22E mark B1 sot23 BCW60 BCW60A BCW60AR BCW60B BCW60BR
    Text: SOT23 NPN SILICON PLANAR SMALL SIGNAL TRANSISTORS BCW60 ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Base Breakdown Voltage V(BR)EBO Collector-Emitter Cut-off Current ICES 20 20


    Original     		BCW60 BCW60AR BCW60BR BCW60CR BCW60DR 150oC 200Hz h12e BCW60DR CR SOT23 power 22E mark B1 sot23 BCW60 BCW60A BCW60AR BCW60B BCW60BR PDF

    Untitled

    Abstract: No abstract text available
    Text: Central CYT5554D TM Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED COMPLEMENTARY NPN & PNP HIGH VOLTAGE SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT5554D type consists of one 1 NPN high voltage silicon transistor and one (1) complementary PNP high


    Original     		CYT5554D OT-228 100MHz 20-September PDF

    FZT851

    Abstract: C01A fzt853 FZT951 FZT953 DSA003717
    Text: SOT223 NPN SILICON PLANAR HIGH CURRENT HIGH PERFORMANCE TRANSISTORS FZT851 FZT853 ISSUE 2 - OCTOBER 1995 FEATURES * * * * C Extremely low equivalent on-resistance; RCE(sat) 44mΩ at 5A 6 Amps continuous current, up to 20 Amps peak current Very low saturation voltages


    Original     		OT223 FZT851 FZT853 FZT951 FZT953 100mA, FZT851 C01A fzt853 FZT951 FZT953 DSA003717 PDF

    transistor 228

    Abstract: No abstract text available
    Text: CYT5554D SURFACE MOUNT DUAL, ISOLATED COMPLEMENTARY HIGH VOLTAGE NPN/PNP SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT5554D type consists of one 1 NPN high voltage silicon transistor and one (1) complementary PNP high voltage silicon


    Original     		CYT5554D OT-228 100MHz 13-August transistor 228 PDF

    Untitled

    Abstract: No abstract text available
    Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium-Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − hFE = 2500 (Typ) @ IC = 4.0 Adc


    Original     		BDX53B, BDX53C BDX54B, BDX54C BDX53C, BDX53B/D PDF

    BC547 hie hre hfe

    Abstract: pin configuration NPN transistor BC548 pin configuration NPN transistor BC547 pin configuration transistor BC547 BC547 collector characteristic curve pin configuration transistor BC549 BC549 transistor BC549 BC548 pin configuration NPN transistor BC549
    Text: BC546 THRU BC549 Small Signal Transistors NPN TO-92 FEATURES .142 (3.6) min. .492 (12.5) .181 (4.6) .181 (4.6) ♦ NPN Silicon Epitaxial Planar Transistors ♦ These transistors are subdivided into three groups A, B and C according to their current gain. The type


    Original     		BC546 BC549 BC547 BC548 BC549 BC556 BC559 BC548 BC547 hie hre hfe pin configuration NPN transistor BC548 pin configuration NPN transistor BC547 pin configuration transistor BC547 BC547 collector characteristic curve pin configuration transistor BC549 transistor BC549 pin configuration NPN transistor BC549 PDF

    BC547 hie hre hfe

    Abstract: bc540 bc540 B bc549 bc546 BC548 bc547 hie bc549 noise figure
    Text: BC546 . BC549 NPN Silicon Epitaxial Planar Transistors These transistors are subdivided into three groups A, B and C according to their current gain. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied in all three groups.


    OCR Scan     		BC546 BC549 BC546 BC547 BC548 BC549 BC556 BC559 BC547 hie hre hfe bc540 bc540 B bc547 hie bc549 noise figure PDF

    BC547 smd

    Abstract: bc556 SMD BC547 smd package BC557 smd sot23 bc547 smd transistor bc557 SMD philips datasheet SMD BC547 bc337 SMD PACKAGE jc33725 bc557 SMD philips
    Text: Semiconductors Date of release: February 2005 General purpose transistors portfolio Single transistors Polarity IC mA VCEO (V) 25 30 40 100 NPN 150 45 100 PNP 150 500 SOT23 SOT346 (SC-59) SOT323 (SC-70) SOT416 (SC-75) SOT883 (SC-101) SOT54 (TO-92) Ptot max.


    Original     		OT346 SC-59) OT323 SC-70) OT416 SC-75) OT883 SC-101) PMST5089 BC848B BC547 smd bc556 SMD BC547 smd package BC557 smd sot23 bc547 smd transistor bc557 SMD philips datasheet SMD BC547 bc337 SMD PACKAGE jc33725 bc557 SMD philips PDF

    ZTX851

    Abstract: DSA003778
    Text: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX851 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 840 950 mV IC=4A, VCE=1V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio


    Original     		ZTX851 100mA, 50MHz 100mA 100ms ZTX851 DSA003778 PDF

    BC846

    Abstract: BC849 BC846A BC847 BC847A BC848 BC848A BC849B BC856 BC859
    Text: BC846 THRU BC849 Small Signal Transistors NPN FEATURES ♦ NPN Silicon Epitaxial Planar Transistors SOT-23 .122 (3.1) .118 (3.0) .016 (0.4) .056 (1.43) .052 (1.33) ♦ Especially suited for automatic insertion in thick- and thin-film circuits. ♦ These transistors are subdivided into three


    Original     		BC846 BC849 OT-23 BC847 BC848 BC849 BC856. BC859 BC846, BC846A BC847A BC848A BC849B BC856 PDF

    mje150

    Abstract: MJE15031 transistor mje15030g MJE15030 TRANSISTOR MJE15031 transistor mje15030 MJE15028G mje150xx transistor mje15028 mje15031g
    Text: MJE15028, MJE15030 NPN MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as high−frequency drivers in audio amplifiers. Features 8 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 120−150 VOLTS, 50 WATTS


    Original     		MJE15028, MJE15030 MJE15029, MJE15031 MJE15029 MJE15030, MJE15031 O-220AB mje150 transistor mje15030g MJE15030 TRANSISTOR MJE15031 transistor mje15030 MJE15028G mje150xx transistor mje15028 mje15031g PDF

    BCX70RJ

    Abstract: BCX70RH BCW60RA BCX70RK marking ag
    Text: ITT SEmCOND/ I NTE RME TALL SOE J> 4 bf l2 7 1 1 DDG2 S 7 Ô 4 4 fl IS I BCW60, BCX70 1— r NPN Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. « Especially suited for automatic insertion in thick- and thin-film circuits.


    OCR Scan     		BCW60, BCX70 BCW60 BCX70 BCW61 BCX71 BCW60R BCX70R. 4bfl2711 BCX70RJ BCX70RH BCW60RA BCX70RK marking ag PDF

    pin orientation for bdx53c transistor

    Abstract: box 54c IC BDX53B 1N5825 BDX53BG BDX53C BDX53CG BDX54B BDX54C MSD6100
    Text: BDX53B, BDX53C NPN , BDX54B, BDX54C (PNP) Plastic Medium−Power Complementary Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features • High DC Current Gain − • • • • hFE = 2500 (Typ) @ IC = 4.0 Adc


    Original     		BDX53B, BDX53C BDX54B, BDX54C BDX53C, BDX53B/D pin orientation for bdx53c transistor box 54c IC BDX53B 1N5825 BDX53BG BDX53C BDX53CG BDX54B BDX54C MSD6100 PDF

    Untitled

    Abstract: No abstract text available
    Text: MJF6388 NPN , MJF6668 (PNP) Preferred Device Complementary Power Darlingtons For Isolated Package Applications Designed for general−purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.


    Original     		MJF6388 MJF6668 2N6388, 2N6668, TIP102, TIP107 MJF6388/D PDF