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    HFE-75 TRANSISTOR Search Results

    HFE-75 TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    HFE-75 TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BD291

    Abstract: 2SC3883 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035
    Text: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO PD Max r hFE fT 'CBO Max Max Mln (Hz) (A) (8) on ON) 100 100 100 100 100 100 50 50 50 50 50 100 50 218 218 30 30 75 75 75 75 75 75 75 75 80 60 60 70 80 22 22 22 22 22


    Original     		DTS802 DTS804 STI802 STI804 2SC3658 2SC3883 2SD1455 2SD1911 BD291 SD1534-8 2S-C3883 bd292 trw rf transistors 2SC2198 Sanken NPN SD1428 2N5034 2N5035 PDF

    2N3906 EBC

    Abstract: 2N5381 2N4125 EBC mps8097 2N3906 PNP PNP 2N3906 2N5551 circuit 2n2712 data sheet 2N3707 2N3711 equivalent
    Text: Small Signal Transistors TO-92 Case TYPE NO. DESCRIPTION LEAD VCBO VCEO VEBO CODE V (V) ICBO @ VCB (nA) (V) MIN 5.0 *ICES *ICEV MAX 500 18 hFE @ VCE @ IC (V) MIN 75 *hFE (1kHZ) MAX 250 (mA) VCE (SAT) @ IC Cob (V) (mA) fT NF toff 2N2712 NPN AMPL/SWITCH ECB


    Original     		2N2712 2N2714 2N2923 2N2924 PN5828 PN5910 PN6010 2N3906 EBC 2N5381 2N4125 EBC mps8097 2N3906 PNP PNP 2N3906 2N5551 circuit 2n2712 data sheet 2N3707 2N3711 equivalent PDF

    all transistor

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM50TB-24 I _INSULATED TYPE j QM50TB-24 Collector current. BOA Vcex Collector-emitter voltage. 1200V hFE DC current gain. 75 Insulated Type


    OCR Scan     		QM50TB-24 E80276 E80271 all transistor PDF

    Mitsubishi transistor

    Abstract: 53c300 QM15 QM150E
    Text: MITSUBISHI TRANSISTOR MODULES QM150E2Y/E3Y-HK HIGH POWER SWITCHING USE INSULATED TYPE QM150E2Y/E3Y-HK Collector current. 150A Collector-emitter voltage. 600V • hFE DC current gain. 75


    OCR Scan     		QM150E2Y/E3Y-HK E80276 E80271 Mitsubishi transistor 53c300 QM15 QM150E PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM30HA-H Ic Collector current. 30A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		QM30HA-H E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM150DY-HK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-HK lc Collector current. 150A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		QM150DY-HK E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM15TD-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM15TD-H Ic Collector current. 15A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		QM15TD-H E80276 E80271 PDF

    QM50DY-H

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM50DY-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-H Ic Collector current. 50A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		QM50DY-H E80276 E80271 QM50DY-H PDF

    Untitled

    Abstract: No abstract text available
    Text: f MITSUBISHI TRANSISTOR MODULES j QM400HA-24 ! HIGH POWER SWITCHING USE [ _INSULATED TYPE f QM400HA-24 Collector current. 400A Collector-emitter voltage.1200V • hFE DC current gain.75


    OCR Scan     		QM400HA-24 E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM50HA-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50HA-H Ic Collector current. 50A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		QM50HA-H E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM50CY-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50CY-H Ic Collector current. 50A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		QM50CY-H E80276 E80271 PDF

    QM20TD-H

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM20TD-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM20TD-H Ic Collector current. 20A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		QM20TD-H E80276 E80271 QM20TD-H PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM20DX-H MEDIUM POWER SWITCHING USE INSULATED TYPE QM20DX-H Ic Collector current. 20A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		QM20DX-H E80276 E80271 PDF

    QM600HA-24

    Abstract: 3102A qm600ha-2 qm600 qm600H
    Text: MITSUBISHI TRANSISTOR MODULES QM600HA-24K HIGH POWER SWITCHING USE INSULATED TYPE QM600HA-24K • lc • Vcex Collector current. 600A Collector-emitter voltage.1200V • hFE DC current gain.75


    OCR Scan     		QM600HA-24K QM600HA-24 3102A qm600ha-2 qm600 qm600H PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM1OOCY-H HIGH POWER SWITCHING USE INSULATED TYPE QM1 OOCY-H Ic Collector current. 100A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		E80276 E80271 QM100CY-H PDF

    Mitsubishi QM50DY-H

    Abstract: qm50dy-h
    Text: MITSUBISHI TRANSISTOR MODULES s QM50DY-H ¡ MEDIUM POWER SWITCHING USE INSULATED TYPE QMSODY-H • lc Collector current. 50A Collector-emitter voltage. 600V • hFE DC current gain.75


    OCR Scan     		QM50DY-H E80276 E80271 Mitsubishi QM50DY-H qm50dy-h PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM15TB-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM15TB-2H Collector current. 15A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		QM15TB-2H E80276 E80271 PDF

    QM30DY-2H

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE i QM30DY-2H * Ic * V cex * hFE Collector current. 30A Collector-emltter voltage. 1000V DC current gain.75 * Insulated Type


    OCR Scan     		QM30DY-2H E80276 E80271 QM30DY-2H PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM150CY-H HIGH POWER SWITCHING USE INSULATED TYPE QM150CY-H lc Collector current. 150A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		QM150CY-H E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM50DY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM50DY-2H Ic Collector current. 50A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		QM50DY-2H E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM30CY-H MEDIUM POWER SWITCHING USE INSULATED TYPE Q M 30CY-H Ic Collector current. 30A Vcex Collector-emitter voltage.600V hFE DC current gain. 75 Insulated Type


    OCR Scan     		QM30CY-H 30CY-H E80276 E80271 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM100HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM100HY-2H Ic Collector current. 100A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		QM100HY-2H E80276 E80271 PDF

    QM10

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM100HY-2H MEDIUM POWER SWITCHING USE INSULATED TYPE QM100HY-2H • to • V cex • hFE Collector current.100A Collector-emitter voltage. 1000V DC current gain. 75


    OCR Scan     		QM100HY-2H E80276 E80271 Tj-25 QM10 PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI TRANSISTOR MODULES QM75DY-2H HIGH POWER SWITCHING USE INSULATED TYPE QM75DY-2H lc Collector current. 75A Vcex Collector-emitter voltage 1000V hFE DC current gain. 75 Insulated Type UL Recognized


    OCR Scan     		QM75DY-2H E80276 E80271 PDF