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    HFP830 Search Results

    HFP830 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HFP830 Shantou Huashan Electronic Devices N-Channel Enhancement Mode Field Effect Transistor Original PDF

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    HFP830

    Abstract: TO-220B
    Text: BVDSS = 500 V RDS on typ = 1.2 Ω HFP830 ID = 4.5 A 500V N-Channel MOSFET TO-220 FEATURES  Originative New Design 1  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology 2 3 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances


    Original     		PDF HFP830 O-220 54typ HFP830 TO-220B

    HFP830

    Abstract: IRF830 DIODE HALF BRIDGE TO-220
    Text: HFP830 Shantou Huashan Electronic Devices Co.,Ltd. N-Channel Enhancement Mode Field Effect Transistor █ General Description TO-220 This Power MOSFET is produced using planar stripe, DMOS technology. This latest technology has been especially designed to


    Original     		PDF HFP830 O-220 IRF830 HFP830 IRF830 DIODE HALF BRIDGE TO-220

    2545a

    Abstract: transistor irf830 HFP830 vdss500v transistor PDTC IRF830
    Text: N-Channel Enhancement Mode Field Effect Transistor 汕头华汕电子器件有限公司 对应国外型号 IRF830 HFP830 █ 主要用途 █ 外形图及引脚排列 高压高速电源开关。 TO-220 █ 极限值（Ta=25℃） Tstg——贮存温度………………………………… -55~150℃


    Original     		PDF IRF830 HFP830 O-220 500VVGS 20VVDS 75VVGS 10VID 2545a transistor irf830 HFP830 vdss500v transistor PDTC IRF830