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    HI-SINCERITY MICROELECTRONICS Search Results

    HI-SINCERITY MICROELECTRONICS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    LMH6646 MDC Texas Instruments 2.7V, 650µA, 55MHz Rail-to-Rail Input and Output Amplifiers with Shutdown Option 0-DIESALE -40 to 85 Visit Texas Instruments
    LMH6629 MDC Texas Instruments Ultra-Low Noise, High-Speed Operational Amplifier with Shutdown 0-DIESALE -40 to 85 Visit Texas Instruments
    OPA2681N1 Texas Instruments SpeedPlus(TM) Wideband, Current Feedback Operational Amplifier with Disable 14-SOIC Visit Texas Instruments
    LMV794 MDA Texas Instruments 88 MHz, Low Noise, 1.8V CMOS Input, Decompensated Operational Amplifiers 0-DIESALE -40 to 85 Visit Texas Instruments
    LMH6723 MDC Texas Instruments Single/Quad 370 MHz 1 mA Current Feedback Op Amp 0-DIESALE -40 to 85 Visit Texas Instruments

    HI-SINCERITY MICROELECTRONICS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    SOT-23 A8A

    Abstract: a8p transistor MARKING A8C SOT-23 a8j digital transistor ROC SOT 23 SOT-23 A8B mark 17 sot-23 hsmc footprint On semiconductor date Code sot-23 SOT-23 A8f
    Text: HI-SINCERITY Spec. No. : HN200302 Issued Date : 2003.03.01 Revised Date : 2005.01.14 Page No. : 1/6 MICROELECTRONICS CORP. HUN2211 / HUN2212 / HUN2213 / HUN2214 / HUN2215 HUN2216 / HUN2230 / HUN2231 / HUN2232 / HUN2233 HUN2234 / HUN2235 / HUN2236 / HUN2237 / HUN2238


    Original     		HN200302 HUN2211 HUN2212 HUN2213 HUN2214 HUN2215 HUN2216 HUN2230 HUN2231 HUN2232 SOT-23 A8A a8p transistor MARKING A8C SOT-23 a8j digital transistor ROC SOT 23 SOT-23 A8B mark 17 sot-23 hsmc footprint On semiconductor date Code sot-23 SOT-23 A8f PDF

    HBZX55C2V4

    Abstract: HBZX55C2V7 HBZX55C3V0 HBZX55C3V3 HBZX55C3V6 HBZX55C3V9 HBZX55C4V3 HBZX55C4V7 HBZX55C5V1 HBZX55C5V6
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : Preliminary Data Issued Date : 1999.05.01 Revised Date : 1999.09.01 Page No. : 1/3 HBZX55C Series ZENER DIODES Device Type HBZX55C2V4 HBZX55C2V7 HBZX55C3V0 HBZX55C3V3 HBZX55C3V6 HBZX55C3V9 HBZX55C4V3 HBZX55C4V7


    Original     		HBZX55C HBZX55C2V4 HBZX55C2V7 HBZX55C3V0 HBZX55C3V3 HBZX55C3V6 HBZX55C3V9 HBZX55C4V3 HBZX55C4V7 HBZX55C5V1 HBZX55C2V4 HBZX55C2V7 HBZX55C3V0 HBZX55C3V3 HBZX55C3V6 HBZX55C3V9 HBZX55C4V3 HBZX55C4V7 HBZX55C5V1 HBZX55C5V6 PDF

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : Preliminary Data Issued Date : 2000.08.01 Revised Date : 2000.10.01 Page No. : 1/2 MICROELECTRONICS CORP. HMMDB3 TRIGGER DIODES Description High reliability glass passivation insuring parameter stability and against contamination.


    Original     		PDF

    A6T TRANSISTOR

    Abstract: transistor A6t 15 marking A6t sot-23 transistor A6t A6t SOT-23 sot23 marking A6T A6T SOT-23 MARKING transistor A6t 12 transistor A6p A6t SOT23
    Text: HI-SINCERITY Spec. No. : HN200301 Issued Date : 2003.03.01 Revised Date : 2005.01.14 Page No. : 1/5 MICROELECTRONICS CORP. HUN2111 / HUN2112 / HUN2113 / HUN2114 / HUN2115 HUN2116 / HUN2130 / HUN2131 / HUN2132 / HUN2133 HUN2134 / HUN2136 / HUN2137 / HUN2140


    Original     		HN200301 HUN2111 HUN2112 HUN2113 HUN2114 HUN2115 HUN2116 HUN2130 HUN2131 HUN2132 A6T TRANSISTOR transistor A6t 15 marking A6t sot-23 transistor A6t A6t SOT-23 sot23 marking A6T A6T SOT-23 MARKING transistor A6t 12 transistor A6p A6t SOT23 PDF

    MONOLITHIC SYSTEMS CORP

    Abstract: HTIP112A o25c DARLINGTON TIN 1A AO125 transistor h2a ha2002
    Text: HI-SINCERITY Spec. No. : HA200221 Issued Date : 2002.08.01 Revised Date : 2004.06.18 Page No. : 1/5 MICROELECTRONICS CORP. HTIP112A SILICON NPN POWER DARLINGTON TRANSISTOR • Monolithic Darlington Configuration • Integrated Antiparallel Collector-Emitter Diode


    Original     		HA200221 HTIP112A 183oC 217oC 240oC 260oC MONOLITHIC SYSTEMS CORP HTIP112A o25c DARLINGTON TIN 1A AO125 transistor h2a ha2002 PDF

    HE6106

    Abstract: HPN2369A
    Text: HI-SINCERITY Spec. No. : HE6106 Issued Date : 1992.09.22 Revised Date : 2005.02.14 Page No. : 1/5 MICROELECTRONICS CORP. HPN2369A NPN EPITAXIAL PLANAR TRANSISTOR Description The HPN2369A is designed for general purpose switching and amplifier applications.


    Original     		HE6106 HPN2369A HPN2369A 183oC 217oC 260oC HE6106 PDF

    Untitled

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6859 Issued Date : 1998.02.01 Revised Date : 2004.09.08 Page No. : 1/4 MICROELECTRONICS CORP. HMBT4124 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT4124 is designed for general purpose switching and amplifier applications.


    Original     		HE6859 HMBT4124 HMBT4124 OT-23 183oC 217oC 260oC PDF

    HMBT4401

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6815 Issued Date : 1993.06.30 Revised Date : 2004.09.08 Page No. : 1/5 MICROELECTRONICS CORP. HMBT4401 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT4401 is designed for general purpose switching and amplifier applications.


    Original     		HE6815 HMBT4401 HMBT4401 OT-23 183oC 217oC 260oC PDF

    HMBT3906

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : HE6820 Issued Date : 1993.06.30 Revised Date : 2004.08.17 Page No. : 1/4 MICROELECTRONICS CORP. HMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT3906 is designed for general purpose switching and amplifier applications.


    Original     		HE6820 HMBT3906 HMBT3906 OT-23 183oC 217oC 260oC PDF

    HMBT3906

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6820 Issued Date : 1993.06.30 Revised Date : 2002.10.25 Page No. : 1/3 HMBT3906 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT3906 is designed for general purpose switching and amplifier applications.


    Original     		HE6820 HMBT3906 HMBT3906 OT-23 PDF

    HMM55C2V0

    Abstract: HMM55C2V4 HMM55C2V7 HMM55C3V0 HMM55C3V3 HMM55C3V6 HMM55C3V9 HMM55C4V3 HMM55C4V7
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HMM200201 Issued Date : 2002.05.01 Revised Date : 2002.09.09 Page No. : 1/3 HMM55C Series ZENER DIODES Device Type HMM55C2V0 HMM55C2V4 HMM55C2V7 HMM55C3V0 HMM55C3V3 HMM55C3V6 HMM55C3V9 HMM55C4V3 HMM55C4V7 HMM55C5V1


    Original     		HMM200201 HMM55C HMM55C2V0 HMM55C2V4 HMM55C2V7 HMM55C3V0 HMM55C3V3 HMM55C3V6 HMM55C3V9 HMM55C4V3 HMM55C2V0 HMM55C2V4 HMM55C2V7 HMM55C3V0 HMM55C3V3 HMM55C3V6 HMM55C3V9 HMM55C4V3 HMM55C4V7 PDF

    darlington transistor SOT-23

    Abstract: HMBTA14
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6841 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/3 HMBTA14 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor Absolute Maximum Ratings SOT-23 • Maximum Temperatures


    Original     		HE6841 HMBTA14 OT-23 darlington transistor SOT-23 HMBTA14 PDF

    HMBT2369

    Abstract: 100MHZ
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6834 Issued Date : 1998.02.01 Revised Date : 2001.10.25 Page No. : 1/3 HMBT2369 NPN EPITAXIAL PLANAR TRANSISTOR Description The HMBT2369 is designed for general purpose switching and amplifier applications.


    Original     		HE6834 HMBT2369 HMBT2369 OT-23 100MHZ PDF

    HSB764

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6549-B Issued Date : 1996.11.25 Revised Date : 2000.10.01 Page No. : 1/4 HSB764 PNP EPITAXIAL PLANAR TRANSISTOR Description Voltage regulator, Relay driver, electrical equipment application. Absolute Maximum Ratings


    Original     		HE6549-B HSB764 HSB764 PDF

    HLB123I

    Abstract: IC DATE CODE
    Text: HI-SINCERITY Spec. No. : HI200202 Issued Date : 2002.06.01 Revised Date : 2005.07.13 Page No. : 1/5 MICROELECTRONICS CORP. HLB123I NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB123I is designed for high voltage. High speed switching inductive circuits


    Original     		HI200202 HLB123I HLB123I O-251 183oC 217oC 260oC IC DATE CODE PDF

    strobo led

    Abstract: HM1300 MARKING BL SOT89
    Text: HI-SINCERITY Spec. No. : HM200202 Issued Date : 2002.02.01 Revised Date : 2006.07.27 Page No. : 1/4 MICROELECTRONICS CORP. HM1300 Silicon PNP Epitaxial Type Transistor Description • Strobo Flash Applications • Medium Power Amplifier Applications SOT-89


    Original     		HM200202 HM1300 OT-89 -50mA) 200oC 183oC 217oC 260oC 10sec strobo led HM1300 MARKING BL SOT89 PDF

    RD SOT-23

    Abstract: HMBT5401 HMBT5551
    Text: HI-SINCERITY Spec. No. : HE6819 Issued Date : 1993.06.30 Revised Date : 2004.09.07 Page No. : 1/4 MICROELECTRONICS CORP. HMBT5401 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT5401 is designed for general purpose applications requiring high breakdown voltages.


    Original     		HE6819 HMBT5401 HMBT5401 OT-23 HMBT5551 183oC 217oC 260oC RD SOT-23 HMBT5551 PDF

    LB124E

    Abstract: HLB124E IC03 Solder HLB124E Datasheet NPN Transistor 600V TO-220 hlb124eb1
    Text: HI-SINCERITY Spec. No. : HE6727 Issued Date : 1998.07.01 Revised Date : 2004.11.03 Page No. : 1/5 MICROELECTRONICS CORP. HLB124E NPN EPITAXIAL PLANAR TRANSISTOR Description The HLB124E is designed for high voltage, high speed switching inductive circuits,


    Original     		HE6727 HLB124E HLB124E O-220 183oC 217oC 260oC LB124E IC03 Solder HLB124E Datasheet NPN Transistor 600V TO-220 hlb124eb1 PDF

    HI3055

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9004 Issued Date : 1994.01.25 Revised Date : 2001.05.31 Page No. : 1/2 HI3055 NPN EPITAXIAL PLANAR TRANSISTOR Description The HI3055 is designed for general purpose of amplifier and switching applications.


    Original     		HE9004 HI3055 HI3055 PDF

    HMBT4403

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6818 Issued Date : 1993.06.30 Revised Date : 2002.10.25 Page No. : 1/4 HMBT4403 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT4403 is designed for general purpose applications requiring high breakdown voltages.


    Original     		HE6818 HMBT4403 HMBT4403 OT-23 PDF

    HSB564A

    Abstract: No abstract text available
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6519 Issued Date : 1993.01.15 Revised Date : 2001.10.15 Page No. : 1/3 HSB564A PNP EPITAXIAL PLANAR TRANSISTOR Description The HSB564A is designed for general purpose low frequency power amplifier applications.


    Original     		HE6519 HSB564A HSB564A PDF

    HTL294I

    Abstract: No abstract text available
    Text: HI-SINCERITY Spec. No. : Preliminary Data Issued Date : 2000.12.21 Revised Date : 2001.03.23 Page No. : 1/3 MICROELECTRONICS CORP. HTL294I PNP EPITAXIAL PLANAR TRANSISTOR Description The HTL294I is designed for application that requires high voltage. Features


    Original     		HTL294I HTL294I 300mA PDF

    HMBT6517

    Abstract: HMBT6520
    Text: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6806 Issued Date : 1996.04.10 Revised Date : 2002.11.29 Page No. : 1/3 HMBT6520 PNP EPITAXIAL PLANAR TRANSISTOR Description The HMBT6520 is designed for general purpose applications requiring high breakdown voltages.


    Original     		HE6806 HMBT6520 HMBT6520 OT-23 HMBT6517 HMBT6517 PDF

    HE8050S

    Abstract: transistor he8050s HE8050SC equivalent of HE8050S HE6110
    Text: HI-SINCERITY Spec. No. : HE6110 Issued Date : 1992.09.30 Revised Date : 2001.07.18 Page No. : 1/4 MICROELECTRONICS CORP. HE8050S NPN EPITAXIAL PLANAR TRANSISTOR Description The HE8050S is designed for general purpose amplifier applications. Absolute Maximum Ratings


    Original     		HE6110 HE8050S HE8050S 25hibited transistor he8050s HE8050SC equivalent of HE8050S HE6110 PDF