BF422
Abstract: transistor bf422 BF420 BF421 BF423
Text: AMER PHILIPS/D ISCR ETE bSE D • bbSBTBl DDS7bB4 bSb HIA PX D T 4 ¿ U A BF422 SILICON EPITAXIAL TRANSISTORS N-P-N transistors in plastic TO-92 envelope primarily intended forclass-B video output stages in colour television and professional monitor equipment. P-N-P complements are BF421 and BF423.
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DD27bÃ
BF422
BF421
BF423.
BF420
D027bflÃ
BF422
transistor bf422
BF423
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2N341
Abstract: MIL-S-1950U a1u transistor XLO6 2N3413 a1u marking 6 A1u marking transistor c 3206
Text: M IL -S -19500/31C 1 June 1972 SUPERSEDING M IL -S -1 9 5 0 0 /3 1 B 21 Ja n u ary 1965 MILITARY SPECIFICA TION SEMICONDUCTOR DEVICE. TRANSISTOR, NPN. SILICON, LOW-POWER T Y PE 2N341 T hia sp e c ific a tio n is approved fo r u se by all D e p a rt m e n ts and A gencies of th e D e p a rtm e n t of D efen se?-
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MIL-S-19500
MIL-S-19500/31B
2N341
2N341
MIL-S-1950U
a1u transistor
XLO6
2N3413
a1u marking 6
A1u marking
transistor c 3206
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2N5770
Abstract: T0-92A T092A
Text: 2N5770 NPN SILICON PLANAR EPITAXIAL TRANSISTOR 2N5770 is NPN silicon planar epitaxial transistor designed for small signal high frequency amplifiers and oscillators. I CASE T0-92A EBC ABSOLUTE MAXIMUM RATINGS Collector-Base Voltage Collector-Emitter Voltiage
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2N5770
2N5770
T0-92A
625mW
300mW
60MHz
-3-00C4C9
3MHS321
B0kfe947y
T0-92A
T092A
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Untitled
Abstract: No abstract text available
Text: T O -92 5YM5EMI SEM ICO N DU CTO R BC368, -25 Plastic Encapsulate Transistors TRANSISTOR NPN 1U /— 1 \ luopl 9Z FEATURE Power dissipation PCM : 1. EMITTER 0.625 W (Tamb=25 °C) 2. COLLECTOR Collector current IC M I A 1 3. BASE Collector base voltage
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BC368,
270TYP
050TYP
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Untitled
Abstract: No abstract text available
Text: INI J 3-TERMINAL POSITIVE VOLTAGE GENERAL DESCRIPTION The NJU7202 series is a 100mA Output 3-terninaI positive voltage regulator which contains internal accurate voltage reference, error amplifier, control transistor outputvoltage setting resistor and shotdown prevention circuit.
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NJU7202
100mA
NJU7202L
NJU7202U
OT-89)
T0-92)
100mA
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TRANSISTOR 1017
Abstract: SAB 1018 P BFQ166
Text: ^5 3* 1 3 1 DO eS lD Û b4T H A P X Philips Sem iconductors Product specification NPN 1 GHz video transistor BFQ166 N AMER P H I L I P S / D I S C R E T E FEATURES b?E ]>' PINNING • Low output capacitance • High gain bandwidth product PIN 1 DESCRIPTION
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BFQ166
OT223
OT223.
bb53T31
MRA599
TRANSISTOR 1017
SAB 1018 P
BFQ166
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BS208
Abstract: MB8075
Text: Philips Components Data sheet status Product specification date of issue February 1991 BS208 P-channel enhancement mode vertical D-MOS transistor PIN CONFIGURATION FEATURES • Direct interface to C-MOS • High-speed switching • No secondary breakdown.
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BS208
aTO-92
MB8075
iz7os34
003L011
BS208
MB8075
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7200L50
Abstract: NJU7200 7200L15 7200l30
Text: NJU7200 Series P R E L I M I NARY C-MOS 3-TER M INAL POSITIVE • GENERAL DESCRIPTION The NJU7200 series is a low drop out and C-MOS 3terminal positive voltage regulator which contains int ernal accurate voltage reference, error amplifier, control transistor and output voltage setting resistor.
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NJU7200
7200L50
7200L15
7200l30
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2n5549
Abstract: No abstract text available
Text: TYPE 2N5549 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T I N N O . D L -S 7 0 1 1 1 2 4 , J U N E 1 9 7 0 FOR LOW-LEVEL CHOPPERS, LOGIC SWITCHES, MULTIPLEXERS, AND RF AND VHF AMPLIFIERS • High lyfsl/Ciss Ratio High-Frequency Figure-of-Merit
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2N5549
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PW-201
Abstract: a1641 2044B 2SA1641 t313a 29261
Text: Ordering number: EN 2926A N°-2926A a _ _ _ _ _ _ _ 2 S A 164 1 PNP Epitaxial Planar Silicon Transistor High-Current Switching Applications Features Adoption of FBET, MBIT processes. Low saturation voltage. F ast switching speed. Large current capacity. Small and slim package making it easy to make 2SA1641-used set smaller
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2SA1641-used
PW-201
a1641
2044B
2SA1641
t313a
29261
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PDF
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Untitled
Abstract: No abstract text available
Text: SIEMENS NPN Silicon Switching Transistor SXT 3904 • High current gain: 0.1 mA to 100 mA • Low collector-emitter saturation voltage Type Marking Ordering Code tape and reel Pin Configuration 1 2 3 Package1) SXT 3904 1A Q68000-A8396 B SOT-89 C E Maximum Ratings
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Q68000-A8396
OT-89
5235bQ5
G122b23
fl53Sb05
E35Li05
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B0543C
Abstract: No abstract text available
Text: BD543, BD543A, BD543B, BD543C NPN SILICON POWER TRANSISTORS Copyright 1997, Power innovations Limited, UK • Designed for Complementary Use with the BD544 Series • 70 W at 25°C Case Temperature • 8 A Continuous Collector Current • 10 A Peak Collector Current
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BD543,
BD543A,
BD543B,
BD543C
BD544
BD543
BD543A
BD543S
B0543C
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TLP120-4
Abstract: E67349 TLP120 11-4c1 detector diode
Text: GaAs IRED a PHOTO-TRANSISTOR T L P 1 2 , - 4 TLP120 U nit in mm PROGRAM MABLE CONTROLLERS TLP120 A C /D C -IN P U T M ODULE 6 Weight : 0.{ 4 TELECOM M UNICATION The TOSHIBA MINI FLAT COUPLER TLP120 and TLP120-4 is a small outline coupler, suitable for surface m ount assembly.
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TLP120
TLP120)
TLP120-4
3750Vrms
UL1577,
E67349
E67349
11-4c1
detector diode
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Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE b^E D • b b S S ^ l 0Q3D7^S ^flT W A P X Philips Semiconductors Product Specification PowerMOS transistor BUK553-100A/B Logic level FET_ _ _ GENERAL DESCRIPTION N-channel enhancement mode
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BUK553-100A/B
O220AB
BUK553
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BUK437-500B
Abstract: No abstract text available
Text: AMER PH IL IPS /DIS CRET E bTE T> • b b S 3 R 31 OOBDMôS Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bbS3R31
BUK437-500B
btS3T31
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistor BUK565-60A Logic level GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface
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BUK565-60A
BUK565-60A
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bc 103 transistor
Abstract: bc 106 transistor transistor BC 549 transistor bc 103 bc 104 npn transistor transistor bc 102 transistor c 548 of bc 547 b transistor bc 546 transistor Bc 580
Text: HN / BC 546.549 NPN Silicon Expitaxial Planar Transistor These transistors are subdivided into three groups A, B and C according to their current gain. The type BC546 is available in groups A and B, however, the types BC547 and BC548 can be supplied in all three groups. The BC549
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BC546
BC547
BC548
BC549
BC556.
BC559
100mA
bc 103 transistor
bc 106 transistor
transistor BC 549
transistor bc 103
bc 104 npn transistor
transistor bc 102
transistor c 548
of bc 547 b
transistor bc 546
transistor Bc 580
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APT45G100BN
Abstract: No abstract text available
Text: ADVANCED POIdER T E C H N O L O G Y bl E □ 2 5 7 ^ 0*1 OOOOfl'i'ï flb? D A d van ced po w er Tec h n o lo g y * APT45G100BN 1000V 45A POWER MOS IV IGBT N -C H A N N EL ENHANCEMENT MODE HIGH VOLTAGE POWER INSULATED GATE BIPOLAR TRANSISTOR MAXIMUM RATINGS
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APT45G100BN
O-247AD
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Untitled
Abstract: No abstract text available
Text: Philips Com ponents Data sheet status Preliminary specification date of issue March 1991 BUK474-400B PowerMOS transistor PHILIPS INTERNATIONAL GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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711042b
BUK474-400B
-SOT186A
7110flgb
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PDF
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BUK437-500B
Abstract: J812 DD304 HIA TRANSISTOR
Text: N Afl ER PHILIPS/DISCRETE bTE T> m bbS3R31 □Q3DM6S Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bbS3R31
BUK437-500B
btS3T31
BUK437-500B
J812
DD304
HIA TRANSISTOR
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PDF
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I138
Abstract: 2SA512 2SC512 23A513
Text: 5 - - FOR USE BY ELECTRICIANS OVERSEAS : •M-EiiOSW HE New T ransistor Manual lists all the transistors registered with the Electronic Industries Association of Japan (EIAJ), arranged in a manner easy to look up. We hope that you will m ake full use of the data provided in this manual by referring to the Japanese-English
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rbb-250pS
I138
2SA512
2SC512
23A513
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PDF
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Untitled
Abstract: No abstract text available
Text: Philips Semiconductors Product specification PowerMOS transistors PHX3N40E Avalanche energy rated_ FEATURES • • • • • SYMBOL QUICK REFERENCE DATA Repetitive Avalanche Rated Fast switching Stable off-state characteristics
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PHX3N40E
OT186A
PHX3N40E
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LP2S
Abstract: BUK545-50A 40608G
Text: - r - 3 Philips Components Data sheet status Preliminary specification date of issue March 1991 Replaces BUK545-50A/B BUK575-60A/B PowerMOS transistor Logic level FET SbE » PH IL IP S I N T E R N A T I O N A L GENERAL DESCRIPTION N-channel enhancement mode
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BUK575-60A/B
BUK545-50A/B
711Dfl2b
DG44724
BUK575
LP2S
BUK545-50A
40608G
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PDF
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transistor tt 2222
Abstract: C7f TRANSISTOR BLY92C BLY92C/01 BLY92
Text: Philips Semiconductors b b S 3 T 3 1 Q 0 2 tì 7 4 0 CHT • A P X ^ u c ^ p e c m c a tfó n BLY92C/01 VHF power transistor N AUER PHILIPS/DISCRETE b*lE » PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,
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BLY92C/01
OT122F
PINNING-SOT122F_
MBB012
transistor tt 2222
C7f TRANSISTOR
BLY92C
BLY92C/01
BLY92
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