sharp lt024
Abstract: lt024 lt024* sharp LT090 amorphous silicon photodiode LT024 LASER LTO15
Text: 1 Internal Structure of Laserx Diodes x x x x x x x x x x x Fig. Multicoating of Chip Facet To achieve hiah oDtical Dower outDut in the LT024 series, LTO1 5 series, LTO1 7 series and LT090 series, x 17-1 x x x x reflective multilayer film composed of amorphous
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LT024
LT090
sharp lt024
lt024
lt024* sharp
amorphous silicon photodiode
LT024 LASER
LTO15
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LQ1OPX21
Abstract: SHE25
Text: . , ‘REPARED BY : DATE .e I APPROVED BY : SPEC No. LD8204A SHARP DATE L QUID CRYSTAL DISPLAY GROUP FILE No. ISSUE : Feb .17 .1996 PAGE : 13 pages APPLICABLE GROUP Liquid Crystal Display SHARP CORPORATION Group SPECIFICATION DEVICE SPECIFICATION FOR TFT-LCD Module
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LD8204A
LQ1OPX21
LQ1OPX21
SHE25
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metal detector diagram PI
Abstract: A760 AIA760 JUA760DM MA760
Text: MA760 Hiah Soeed Differential Comparator FAIRCHILD A Schlum berger C om pany Linear Division C omparators Description Connection Diagram 8-Lead Metal Package Top View The /¿A760 is a differential voltage com parator offering considerable speed im provem ent over the /aA710 family
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MA760
/aA710
juA760
metal detector diagram PI
A760
AIA760
JUA760DM
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RC144DPI-D
Abstract: RC96DPi-D diode OA 71 DD300N RC96ATI ROCKWELL "eye pattern generator"
Text: RC144ATI Rockwell RC144ATÌ Desktop Integrated Hiah Speed Data/Fax/Voice Modem Device Set INTRODUCTION FEATURES The Rockwell RC144ATi desktop integrated data/fax/voice modem device set families support US or world-wide operation over a dial-up telephone line.
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RC144ATI
RC144ATÌ
RC144ATi)
6550A-UART
J22198
RC144DPI-D
RC96DPi-D
diode OA 71
DD300N
RC96ATI
ROCKWELL "eye pattern generator"
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Untitled
Abstract: No abstract text available
Text: High Precision Operational Amplifier MM1278 M ITSUM I Hiah Precision Operational Âmoiifier Monolithic IC M M 1 278 This IC is a dual-type operational amplifier, with tw o built-in operational amplifiers, and achieves extremely low offset voltage with a single power supply. The input offset voltage and the input offset voltage
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MM1278
100ki2
10ki2
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Untitled
Abstract: No abstract text available
Text: ECL10KH * V l ' n Hiah-Soeed • »» »■ ■ » I 1« « Em itter-Coupled Logic Fam ily 1 1 /^ 4 A lw i\# ■ U 4 - I PRELIMINARY | in f o r m a t io n A 4 This docum ent contains spe! cifications and inform ation ■ Quad OR/NOR Gate
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ECL10KH
MC10H101
TheMC10H101
50-ohm
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m510
Abstract: M51008A m5m51008afp
Text: MITSUBISHI LS Is M5M51008AFP,VP,RV-85VL,-1 OVL, -85VLL,-1 OVLL 1048576-BIT 131072-WORD BY 8-BIT CMOS STATIC RAM DESCRIPTION The M 5M 51008A FP , VP. RV are a 1 0 4 8 5 7 6 -b it CMOS static RAM organized as 131072 w ord by 8 - b i t which are fabricated usina hiah - performance triple polysilicon CMOS
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M5M51008AFP
RV-85VL
-85VLL
1048576-BIT
131072-WORD
1008A
m510
M51008A
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IRFK2D450
Abstract: IR E78996 IRFK2F450
Text: Bulletin E2794 Isolated Base Power HEX-pak Assembly - Half Bridge Configuration • • • • Hiah Current Capability, J UL recognised E78996. Electrically Isolated Base Plate. Easy Assembly into Equipment. v F Description -The HEX-pak™ utilises the well-proven HEXFET™ die, combining
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E2794
IRFK2D450
IRFK2F450
E78996.
O-240
sensitive250
IRFK2D450JRFK2F450
IR E78996
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA 2N4405* PNP Silicon Small-Signal Transistor c k y s t a io n c s 2805 Veterans Hiahwav d e s i g n e d fo r g e n e r a l- p u r p o s e s w it c h in g a n d a m p lif ie r a p p lic a t io n s . S u / f 74 Ronkorkoma, N.Y. 1177u
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2N4405*
1177u
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LT3350
Abstract: a42e
Text: Hiah Resolution LED Arrays SHARP CORP S1E » m f l l f l OTTf l DD0 7 5 0 b 7flM M S R P J 101-Dot High Resolution LT3350 I Model No. LT3350 Red LT3350 LED Array GaAsP I Features 1. 101-dot array 2. Dynamic drive type 3. Directly visible, 1.52mm in width Unit: mm
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LT3350
LT3350
101-Dot
00075D
110X110
a42e
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G001S
Abstract: No abstract text available
Text: H igh Perform ance 256K.X 16 CMOS DRAM H AS4C256K16F0 A Hiah Speed 2S6KX16 CMOS DRAM Fast pane mode Preliminary information Features • O rg a n iz a tio n : 2 6 2 ,1 4 4 w o r d s b y 16 b its • R e a d -m o d ify -w rite • H ig h sp e ed - 5 0 /6 0 ns RAS access tim e
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AS4C256K16F0
2S6KX16
4C256K16F0-50)
40-pin
S4CZ56K16F0-60JC
16F0-50TC
l-30002-A.
G001S
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Untitled
Abstract: No abstract text available
Text: MA715QB Hiah Soeed Operational Amplifier FA IR C HILD A Schlumberger Company MIL-STD-883 July 1986— Rev 16 Aerospace and Defense Data Sheet Linear Products Description Connection Diagram 10-Lead Can Top View The mA715QB is a high speed, high gain, monolithic oper
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MA715QB
MIL-STD-883
10-Lead
mA715QB
/jA715QB
juA715QB
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Fairchild uA711
Abstract: No abstract text available
Text: juA711 Dual Hiah SDeed Differential Comparator FAIRCHILD A S chlum berger C om pany Linear Division Com parators Connection Diagram 10-Lead Metal Package Top View Description The /uA711 is a dual high speed differential com parator featuring high accuracy, fast response times, large input
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juA711
10-Lead
/uA711
juA711C
/iA711
Fairchild uA711
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CB20
Abstract: No abstract text available
Text: 9111 Series H.D. 2.0mm 0.079" Futurebus(+)5 Row s Shroud □upi in Material: Housing: High Temperature Plastic UL94V-0. Electrical Characteristics: Operating Temperature: -65°C ~+125°C. Features: * 2mm hiah density futurebus+ male shroud. * Available pin count from 30-390.
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UL94V-0.
CB20H3:
CB20
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Untitled
Abstract: No abstract text available
Text: o bq4850Y U N I T R O D E - RTC Module with 512Kx8 NVSRAM Features General Description >• I n te g r a t e d SRAM, re a l-tim e clock, crystal, power-fail control circuit, and battery The bq4850Y RTC Module is a non volatile 4,194,304-bit SRAM organ
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bq4850Y
512Kx8
304-bit
32-pin
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CAD15-CAD8
Abstract: No abstract text available
Text: PCI1250A PC CARD CONTROLLER XCPS014 -D E C E M B E R 1997 * Peripheral Component Interconnect PCI Power Management Compliant • Supports Zoom Video With Internal Buffering • ACP11.0 Compliant • Programmable Output Select for CLKRUN • Packaged in 256-Pin BGA
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PCI1250A
XCPS014
256-Pin
82365SL-DF
16-Bit
on1997
S-PBGA-N256)
4040185/A
CAD15-CAD8
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Untitled
Abstract: No abstract text available
Text: MTE Advance Information D • SöböMSb D GG2G5 3 3f l b ■ lllir n lll MNHS January 1991 NATRA M H S M 67202 HI-REL DATA SHEET 1kX 9 CMOS PARALLEL FIFO FEATURES EMPTY, FULL AND HALF FLAGS IN SINGLE DEVICE MODE RETRANSMIT CAPABILITY BI-DIRECTIONAL APPLICATIONS
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QQQ2Q72
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srm2264lct
Abstract: No abstract text available
Text: SRM2264LTio/i2 HIGH SPEED CMOS 64K-BIT STATIC RAM • Industrial Temperature Range • DESCRIPTION The SRM2264Lio/i2 is an 8,192 words x 8 bits asynchronous, static, random access memory on a monolithic CMOS chip. Its very low standby power requirement makes it ideal for applications requiring non-volatile storage
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SRM2264LTio/i2
64K-BIT
SRM2264Lio/i2
SRM2264LTio
100ns
SRM2264LT
120ns
SRM2264LTio/i2
28-pin
srm2264lct
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Untitled
Abstract: No abstract text available
Text: electronic June 1992 M 67203 HI-REL DATA SHEET 2k X 9 CMOS PARALLEL FIFO FEATURES . FIRST-IN FIRST-OUT DUAL PORT MEMORY . FAST ACCESS TIME : 35 TO 55 ns . . EMPTY, FULL AND HALF FLAGS IN SINGLE DEVICE MODE WIDE TEMPERATURE RANGE : - 55°C TO + 125°C . RETRANSMIT CAPABILITY
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S9900
Abstract: AMI 9900 FAMILY 89980 DI-22 IC2 Bus Addresses S9980A S9981 W-15 TF 745-A 02E-08
Text: PRELIMINARY DATA SHEET S9980A/S9981 AMERICAN MICROSYSTEMS, INC. 16-BIT MICROPROCESSOR Features □ □ □ □ □ □ □ □ □ □ □ □ 16-Bit In stru ctio n W o rd F u ll M inicom pu ter In stru ctio n Set C a p ab ility In c lu d in g M u ltip ly and D ivid e
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S9980A/S9981
16-BIT
40-Pin
S9980A
S9981
0320-033F
0780-07FF
S9900
AMI 9900 FAMILY
89980
DI-22
IC2 Bus Addresses
W-15
TF 745-A
02E-08
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KM681001-25
Abstract: KM681001-20 KM681001-35 tl2245 KM681001
Text: KM681001 CMOS SRAM 128K x 8 Bit High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 20,25,35 ns Max. • Low Power Dissipation Standby (TTL) : 40 mA(Max.) (CMOS): 2 mA(Max.) Operating KM681001-20 : 170 mA(Max.) KM681001-25:150 mA(Max.)
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KM681001
KM681001-20
KM681001-25
KM681001
KM681001P:
32-DIP-400
32-SQJ-400
576-bit
KM681001-20
KM681001-35
tl2245
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MR27V3266D
Abstract: LA5A6
Text: OKI Semiconductor Preliminary MR27V3266D 2M x16 / 1M x32 Synchronous OTP ROM DESCRIPTION The MR27V3266D is a 32Mbit One Time Programmable Synchronous Read Only Memory whose configuration can be electrically switched between 2,097,152 x16bit word mode and 1,048,576 x32bit(double word mode) by
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MR27V3266D
MR27V3266D
32Mbit
x16bit
x32bit
66MHz
50MHz
LA5A6
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KM68V257CP15
Abstract: KM68V257CP-15 KM68V257CJ-15 KM68V257CP-17 KM68V257C KM68V257C-15 KM68V257C-17 KM68V257CJ KM68V257CJ-17 KM68V257CP20
Text: KM68V257C CMOS SRAM 32Kx8 Bit High Speed CMOS Static RAM 3.3V Operating FEATURES GENERAL DESCRIPTION • Fast Access Time 15, 17, 20 ns (Max.) • Low Power Dissipation Standby (TTL) : 30 mA (Max.) (CMOS) : 100 |iA (Max.) Operating KM68V257C-15 : 90 mA (Max.)
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KM68V257C
32Kx8
KM68V257C-15
KM68V257C-17
KM68V257C-20
KM68V257CP
28-DIP-300
KM68V257CJ
28-SOJ-300
KM68V257C
KM68V257CP15
KM68V257CP-15
KM68V257CJ-15
KM68V257CP-17
KM68V257C-15
KM68V257C-17
KM68V257CJ
KM68V257CJ-17
KM68V257CP20
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KM68B261A-6
Abstract: KM68B261A-7 KM68B261A-8 Static Random Access Memory
Text: KM68B261A BiCMOS SRAM 32Kx8 Bit High Speed BiCMOS Static RAM FEATURES GENERAL DESCRIPTION • Fast Access Time 6, 7, 8 ns Max. • Low Power Dissipation Standby (TT L): 110 mA (Max.) (CMO S): 20 mA (Max.) Operating Current: 170 mA (f=100MHz) • Single 5V±5%T>ower Supply
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KM68B261A
32Kx8
100MHz)
KM68B261AJ
SOJ-300
KM68B261A
144-bit
0D237Sb
KM68B261A-6
KM68B261A-7
KM68B261A-8
Static Random Access Memory
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