H8 SOT-23
Abstract: marking H8 SOT-23 MMBV609LT1 marking AM sot-23 marking SH SOT23
Text: MOTOROLA SEMICONDUCTOR @ TECHNICAL SiIicon~ning Order this document by MMBV609LT1/D DATA Diode This device is designed for FM tuning, general frequency control and tuning, or any top–of–th~line application requiring back–to–back diode configuration for minimum
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MMBV609LT1/D
OW1-2447
2W609
MMBV609LTl~
H8 SOT-23
marking H8 SOT-23
MMBV609LT1
marking AM sot-23
marking SH SOT23
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MMBFJ177LT1
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document byMMBFJ177LT1/D DATA I o JFET Chopper P-Channel — Depletion 2 SOURCE MMBFJ177LTI I A G:TE+ Y ~.,l~~+i ;.:,’ ‘ *., *b,. .,.K.:\’:~ 1 DRAIN ! .:.\.> Rating Voltage Reverse Gat*Source Voltage Symbol
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byMMBFJ177LT1/D
MMBFJ177LTI
OT-23
O-236AB)
14WI-2447
2W29298
MMBFJ177LT1/D
MMBFJ177LT1
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xl sot-23 marking
Abstract: MMBV809LT1 marking SH SOT23
Text: MOTOROLA SEMICONDUCTOR TECHNICAL Silicon ~ning Order this document by MMBV809LT1/D DATA Diode MMBV809LTI This device is designed for 900 MHz frequency control and tuning applications. provides solid–state reliability in replacement of mechanical tuning methods.
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MMBV809LT1/D
MMBV809LTI
OW1-2447
xl sot-23 marking
MMBV809LT1
marking SH SOT23
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Untitled
Abstract: No abstract text available
Text: SUPERTEX INC blE J> m Ô7732S5 0003440 34T * S T X HV70 S ^ u p e r t e x i n c . 34-Channel Symmetric Row Driver Ordering Information Package Options Device 44 J-Lead Quad Plastic Chip Carrier 44 J-Lead Quad Ceramic Chip Carrier Die in waffle pack 44 J-Lead Quad
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7732S5
34-Channel
MIL-Std-883
HV7022
HV7022DJ
HV7022X
HV7022PJ
RBHV7022DJ
44-pin
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PDF
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T-35-H
Abstract: PIR D 203 S T40F UTM ceramic RESISTOR r10
Text: Standard Products UT69R000 Rad-Hard Microcontroller Data Sheet U lT January 1998 nes& itienaite i ¥ « ? «: m -s □ Built-in 9600 baud UART □ Harvard architecture - 64K data space 1M instruction space □ Full military operating temperature range, -55°C to\
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UT69R000
IL-PRF-3853
MIL-STD-883
1-98-DS
T-35-H
PIR D 203 S
T40F
UTM ceramic RESISTOR r10
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PDF
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mprot
Abstract: No abstract text available
Text: Standard Products UT69R000 RadHard Microcontroller Data Sheet nils Oct. 1998 M I C R O E L E C T R O N I C S Y S T E M S □ Built-in 9600 baud UART Harvard architecture - 64K data space 1M instruction space □ Full military operating temperature range, -55°C to
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UT69R000
16-bit
MIL-PRF-3853
MIL-STD-883
69R000
mprot
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PDF
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LH28F008SC
Abstract: wbae
Text: PRODUCT PREVIEW LH28F008SC 8-MBIT 1 MB x 8 SmartVoltage F la s h F ile MEMORY • SmartVoltage Technology — 3.3V or 5V Vcc — 3.3V, 5V, or 12V VPP ■ High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Erasable Blocks ■ High-Performance
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LH28F008SC
40-Lead
44-Lead
64-Kbyte
120ns
--150ns
wbae
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PDF
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ATS35
Abstract: No abstract text available
Text: Standard Products UT69R000 RadHard Microcontroller Data Sheet nils July 1998 M I C R O E L E C T R O N I C SYSTEMS □ Built-in 9600 baud UART Harvard architecture - 64K data space 1M instruction space □ Full military operating temperature range, -55°C to
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OCR Scan
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UT69R000
16-bit
MIL-PRF-3853
MIL-STD-883
DDD73b3
69R000
T343TM7
ATS35
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PDF
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53C710
Abstract: 53C700 53c7 80386 programmers manual ARBO NCR SCSI 75ALS ncr scsi script 80386 microprocessor pin out diagram DB7-6
Text: NCR 53C710 F e a tu re s • • • • • • • General Description The NCR 53C710 is the second member of the 53C700 family of intelligent, single-chip, third generation SCSI host adapters. A high performance SCSI core and an intelligent 32-bit bus master DMA core are integrated with a
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53C710
32-Bit
53C710
53C700
53c7
80386 programmers manual
ARBO
NCR SCSI
75ALS
ncr scsi script
80386 microprocessor pin out diagram
DB7-6
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PDF
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LM11C
Abstract: IC i voltage follower LM11CN LM308A
Text: g MOTOROLA Precision O perational A m plifiers The LM11C is a precision, low drift operational amplifier providing the best features of existing FET and Bipolar op amps. Implementation of super gain transistors allows reduction of input bias currents by an order of magnitude
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LM11C
LM308A.
b3Lj7253
IC i voltage follower
LM11CN
LM308A
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PDF
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Untitled
Abstract: No abstract text available
Text: TEKTRONIX INC/ TRI ÛU IN T öSGbPlfl 0 0 0 G M 5 G M O T R Ö 2bE D T [ ïniüll G ig a B it L o g ic q S •\c i - O S ' 10G065 10G065K 7 Stage Ripple Counter/Divider 3.0 GHz Clock Rate 10G PicoLogic Family FEATURES >10G PicoLogic I/O compatible • Wlre-OR output capability
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10G065
10G065K
10G065K
050P3
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PDF
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7-Stage Ripple Counter
Abstract: 10G065-2C 10G065-2F 10G065-2L 10G065-2L36 10G065-C 10G065-F 10G065-L 10G065-L36 GHz Ripple Counter
Text: J » ? 10G065 10G065K G ig a B it L o g ic 7 Stage Ripple Counter/Divider 3.0 GHz Clock Rate 10G PicoLogic Family FEATURES •10G PicoLogic I/O compatible ■ Wire-OR output capability 1 Available in flatpack, C-leaded or leadless chip carrier and die form
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10G065
10G065K
10G065K
7-Stage Ripple Counter
10G065-2C
10G065-2F
10G065-2L
10G065-2L36
10G065-C
10G065-F
10G065-L
10G065-L36
GHz Ripple Counter
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PDF
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max4150
Abstract: No abstract text available
Text: % EDI9F232256BC E D i ' 2x256Kx32 SRAM Module ELEOROMC 0E9SN& N C. 2x256Kx32Static RAM CMOS, High Speed Module Features The EDI9F232256B is a high speed 16 megabit Static RAM 2x256Kx32 bit BiCM O S and C M O S Static module organized as 2x256K words by 32 bits .This module
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EDI9F232256BC
2x256Kx32
2x256Kx32Static
EDI9F232256B
2x256K
256Kx4
EDI9F232256B/C
pla5-70
ECH9F2322S68
max4150
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PDF
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SB-TSI
Abstract: ic sj 2038 reset QML-38534 ir020
Text: REVISIONS LTR DESCRIPTION APPROVED DATE YR-MO-DA REV SHEET 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 9 10 11 12 13 14 REV SHEET REV STATUS OF SHEETS REV SHEET PMIC N/A STANDARD M ICRO CIRCUIT
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32-BIT)
14060LB
SB-TSI
ic sj 2038 reset
QML-38534
ir020
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PDF
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3232c
Abstract: No abstract text available
Text: M EDI5C3232C D \ 32Kx32 EEPROM ELECTRONIC DESIGN& NC. 32Kx32 CMOS EEPROM Multi-Chip Module Features 32Kx32 bit CMOS Electrically Eraseable Programmable Read Only Memory • Access Times: 100,120,150, and 200ns • Individual Byte Enables • Individual Write Enables
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EDI5C3232C
32Kx32
200ns
EDI5C3232C
four32Kx8
3232c
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PDF
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csc 9803
Abstract: QML-38534 LA4-DA BMS SYSTEM qualification CE7Y
Text: REVISIONS LTR A DESCRIPTION DATE YR-MO-DA Add device type REV APPROVED 98-12-10_ K. A. Cottonqim A A A A A A A A A A A A A A A A A A A 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 REV A
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AD14060LBF/QML-4
5962-9750702HXC
AD14060LTF/QML-4
csc 9803
QML-38534
LA4-DA
BMS SYSTEM qualification
CE7Y
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PDF
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TMPZ84C011AF-6
Abstract: TMPZ84C011A TMPZ84C011 TDA 4511
Text: TMPZ84C011A TOSHIBA 4. ELECTRICAL CHARACTERISTICS 4.1 M A X IM U M RATINGS ITEM SYM BO L RATING -0.5V to 7V Vcc Supply V oltage w ith respect to Vss VCC -0.5V to VCC + 0.5V VIN Input Voltage PD Pow er Dissipation TA = 85°C TSOLDER 250mW 260°C Soldering Tem perature (Soldering Time 10 sec)
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TMPZ84C011A
250mW
MPUZ80-401
MPUZ80-402
QFP100-P-1420B
MPUZ80-403
TMPZ84C011AF-6
TMPZ84C011A
TMPZ84C011
TDA 4511
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PDF
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UTM ceramic RESISTOR
Abstract: UT69R000
Text: UNITED TECH PIELEC CENTER MRE D • <1343^7 00G2152 7 ■ UTM Military Standard Products UT69R000 Rad-Hard Microcontroller Data Sheet UNITED TECHNOLOGIES MICROELECTRONICS CENTER November 1991 □ Harvard architecture - 64K data space - 1M instruction space
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OCR Scan
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00G2152
UT69R000
16-bit
32-bit
MIL-M-38510.
132-Lead
0002E11
UT69R000,
UT69R000
UTM ceramic RESISTOR
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PDF
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Untitled
Abstract: No abstract text available
Text: D C PWR-82330 ILC DATA DEVICE CORPORATION — SMART POWER 3-PHASE MOTOR DRIVE APPROX. 1/2 ACTUAL SIZE DESCRIPTION The PWR-82330 is a Smart Power 3-phase Motor Drive hybrid. The PWR82330 uses a MOSFET output stage with 100 Vdc rating, and can deliver 5A continuous, 10A peak current to the
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PWR-82330
PWR-82330
PWR82330
-9/92-5M
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PDF
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WD1007
Abstract: OPTI-386WB toshiba MK134FA MK134FA WD1007A-WA2 82C391 80c206 d5655 toshiba laptop keyboard schematic 82C392
Text: OPTÌ-386WB PC/AT Chipset 82C391 /82C392/82C206 Preliminary 82C391 /82C392 DATA BOOK Version 1.1 December 19,1990 I OPTi. Inc. 2525 Walsh Avenue, Santa Clara. CA 95051 (408) 980-8178 FAX: 408-980-8860 Disclaimer This specification is subject to change without notice. OPTi Incorporated assumes no
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OCR Scan
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-386WB
82C391
/82C392/82C206)
/82C392
i555533
353355s3355555535a5555
SS222
22223S
WD1007
OPTI-386WB
toshiba MK134FA
MK134FA
WD1007A-WA2
80c206
d5655
toshiba laptop keyboard schematic
82C392
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PDF
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Untitled
Abstract: No abstract text available
Text: ^ E D I B^ctronlc D««lgnc Inc. . Â IM IO I D iF O M Â T M Features TheEDI82136Cisa1,179,648bitAsynchroriousmemofy core with transparent address and enable latches in the advanced peripheral circuitry. This device is ideally suited for all x32 and x36 bit wide, high-performance memory sub
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OCR Scan
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32Kx36
DQ0-DQ31
EDI82136C
EDI82136C12GC
EDI82136C15GC
EDI82136C17GC
EDI82136C20GC
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PDF
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Untitled
Abstract: No abstract text available
Text: 000 PWR-82331 and PWR-82333 ILC DATA DEVICE _ _ CORPORATION_ SMART POWER 3-PHASE MOTOR DRIVES FEATURES DESCRIPTION APPLICATIONS The PWR-82331 and PWR-82333 are 30A 3-phase motor drive hybrids. The PW R-82331 has a 200V rating and uses MOSFETs in the output stage while the
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PWR-82331
PWR-82333
PWR-82333
R-82331
8233X
PWR-82331/333
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PDF
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Untitled
Abstract: No abstract text available
Text: ^E D I E D I8 2 1 3 6 C H /fif/j Performance Megabit SRAM Badronic o«ign. me. 32Kx36 Monolithic Asynchronous/Latched Address Monolithic Static RAM liF Û M Â T O Û i Features TheEDI82136Cisa1,179,648bitAsynchronousmemory core with transparent address and enable latches in the
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32Kx36
TheEDI82136Cisa1
648bitAsynchronousmemory
EDI82136C,
daparitydeselectconfrolforx32bitoperation
EDI82136C
EDI82136C12GC
EDI82136C15GC
EDI82136C17GC
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PDF
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Untitled
Abstract: No abstract text available
Text: D 000 PWR-82331 and PWR-82333 ILC DATA DEVICE ^ CORPORATION _ SMART POWER 3-PHASE MOTOR DRIVES FEATURES DESCRIPTION APPLICATIONS The PWR-82331 and PWR-82333 are 30A 3-phase motor drive hybrids. The PWR-82331 has a 200V rating and uses MOSFETs in the output stage while the
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OCR Scan
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PWR-82331
PWR-82333
PWR-82333
PWR-82331/333
D-1/92-5M
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PDF
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