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    HIAH POWER FET Search Results

    HIAH POWER FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4164K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163K Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Through hole type / HDIP30 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4207F Toshiba Electronic Devices & Storage Corporation Intelligent power device 600V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation

    HIAH POWER FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    H8 SOT-23

    Abstract: marking H8 SOT-23 MMBV609LT1 marking AM sot-23 marking SH SOT23
    Text: MOTOROLA SEMICONDUCTOR @ TECHNICAL SiIicon~ning Order this document by MMBV609LT1/D DATA Diode This device is designed for FM tuning, general frequency control and tuning, or any top–of–th~line application requiring back–to–back diode configuration for minimum


    Original     		PDF MMBV609LT1/D OW1-2447 2W609 MMBV609LTl~ H8 SOT-23 marking H8 SOT-23 MMBV609LT1 marking AM sot-23 marking SH SOT23

    MMBFJ177LT1

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document byMMBFJ177LT1/D DATA I o JFET Chopper P-Channel — Depletion 2 SOURCE MMBFJ177LTI I A G:TE+ Y ~.,l~~+i ;.:,’ ‘ *., *b,. .,.K.:\’:~ 1 DRAIN ! .:.\.> Rating Voltage Reverse Gat*Source Voltage Symbol


    Original     		PDF byMMBFJ177LT1/D MMBFJ177LTI OT-23 O-236AB) 14WI-2447 2W29298 MMBFJ177LT1/D MMBFJ177LT1

    xl sot-23 marking

    Abstract: MMBV809LT1 marking SH SOT23
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Silicon ~ning Order this document by MMBV809LT1/D DATA Diode MMBV809LTI This device is designed for 900 MHz frequency control and tuning applications. provides solid–state reliability in replacement of mechanical tuning methods.


    Original     		PDF MMBV809LT1/D MMBV809LTI OW1-2447 xl sot-23 marking MMBV809LT1 marking SH SOT23

    Untitled

    Abstract: No abstract text available
    Text: SUPERTEX INC blE J> m Ô7732S5 0003440 34T * S T X HV70 S ^ u p e r t e x i n c . 34-Channel Symmetric Row Driver Ordering Information Package Options Device 44 J-Lead Quad Plastic Chip Carrier 44 J-Lead Quad Ceramic Chip Carrier Die in waffle pack 44 J-Lead Quad


    OCR Scan     		PDF 7732S5 34-Channel MIL-Std-883 HV7022 HV7022DJ HV7022X HV7022PJ RBHV7022DJ 44-pin

    T-35-H

    Abstract: PIR D 203 S T40F UTM ceramic RESISTOR r10
    Text: Standard Products UT69R000 Rad-Hard Microcontroller Data Sheet U lT January 1998 nes& itienaite i ¥ « ? «: m -s □ Built-in 9600 baud UART □ Harvard architecture - 64K data space 1M instruction space □ Full military operating temperature range, -55°C to\


    OCR Scan     		PDF UT69R000 IL-PRF-3853 MIL-STD-883 1-98-DS T-35-H PIR D 203 S T40F UTM ceramic RESISTOR r10

    mprot

    Abstract: No abstract text available
    Text: Standard Products UT69R000 RadHard Microcontroller Data Sheet nils Oct. 1998 M I C R O E L E C T R O N I C S Y S T E M S □ Built-in 9600 baud UART Harvard architecture - 64K data space 1M instruction space □ Full military operating temperature range, -55°C to


    OCR Scan     		PDF UT69R000 16-bit MIL-PRF-3853 MIL-STD-883 69R000 mprot

    LH28F008SC

    Abstract: wbae
    Text: PRODUCT PREVIEW LH28F008SC 8-MBIT 1 MB x 8 SmartVoltage F la s h F ile MEMORY • SmartVoltage Technology — 3.3V or 5V Vcc — 3.3V, 5V, or 12V VPP ■ High-Density Symmetrically-Blocked Architecture — Sixteen 64-Kbyte Erasable Blocks ■ High-Performance


    OCR Scan     		PDF LH28F008SC 40-Lead 44-Lead 64-Kbyte 120ns --150ns wbae

    ATS35

    Abstract: No abstract text available
    Text: Standard Products UT69R000 RadHard Microcontroller Data Sheet nils July 1998 M I C R O E L E C T R O N I C SYSTEMS □ Built-in 9600 baud UART Harvard architecture - 64K data space 1M instruction space □ Full military operating temperature range, -55°C to


    OCR Scan     		PDF UT69R000 16-bit MIL-PRF-3853 MIL-STD-883 DDD73b3 69R000 T343TM7 ATS35

    53C710

    Abstract: 53C700 53c7 80386 programmers manual ARBO NCR SCSI 75ALS ncr scsi script 80386 microprocessor pin out diagram DB7-6
    Text: NCR 53C710 F e a tu re s • • • • • • • General Description The NCR 53C710 is the second member of the 53C700 family of intelligent, single-chip, third generation SCSI host adapters. A high performance SCSI core and an intelligent 32-bit bus master DMA core are integrated with a


    OCR Scan     		PDF 53C710 32-Bit 53C710 53C700 53c7 80386 programmers manual ARBO NCR SCSI 75ALS ncr scsi script 80386 microprocessor pin out diagram DB7-6

    LM11C

    Abstract: IC i voltage follower LM11CN LM308A
    Text: g MOTOROLA Precision O perational A m plifiers The LM11C is a precision, low drift operational amplifier providing the best features of existing FET and Bipolar op amps. Implementation of super gain transistors allows reduction of input bias currents by an order of magnitude


    OCR Scan     		PDF LM11C LM308A. b3Lj7253 IC i voltage follower LM11CN LM308A

    Untitled

    Abstract: No abstract text available
    Text: TEKTRONIX INC/ TRI ÛU IN T öSGbPlfl 0 0 0 G M 5 G M O T R Ö 2bE D T [ ïniüll G ig a B it L o g ic q S •\c i - O S ' 10G065 10G065K 7 Stage Ripple Counter/Divider 3.0 GHz Clock Rate 10G PicoLogic Family FEATURES >10G PicoLogic I/O compatible • Wlre-OR output capability


    OCR Scan     		PDF 10G065 10G065K 10G065K 050P3

    7-Stage Ripple Counter

    Abstract: 10G065-2C 10G065-2F 10G065-2L 10G065-2L36 10G065-C 10G065-F 10G065-L 10G065-L36 GHz Ripple Counter
    Text: J » ? 10G065 10G065K G ig a B it L o g ic 7 Stage Ripple Counter/Divider 3.0 GHz Clock Rate 10G PicoLogic Family FEATURES •10G PicoLogic I/O compatible ■ Wire-OR output capability 1 Available in flatpack, C-leaded or leadless chip carrier and die form


    OCR Scan     		PDF 10G065 10G065K 10G065K 7-Stage Ripple Counter 10G065-2C 10G065-2F 10G065-2L 10G065-2L36 10G065-C 10G065-F 10G065-L 10G065-L36 GHz Ripple Counter

    max4150

    Abstract: No abstract text available
    Text: % EDI9F232256BC E D i ' 2x256Kx32 SRAM Module ELEOROMC 0E9SN& N C. 2x256Kx32Static RAM CMOS, High Speed Module Features The EDI9F232256B is a high speed 16 megabit Static RAM 2x256Kx32 bit BiCM O S and C M O S Static module organized as 2x256K words by 32 bits .This module


    OCR Scan     		PDF EDI9F232256BC 2x256Kx32 2x256Kx32Static EDI9F232256B 2x256K 256Kx4 EDI9F232256B/C pla5-70 ECH9F2322S68 max4150

    SB-TSI

    Abstract: ic sj 2038 reset QML-38534 ir020
    Text: REVISIONS LTR DESCRIPTION APPROVED DATE YR-MO-DA REV SHEET 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 9 10 11 12 13 14 REV SHEET REV STATUS OF SHEETS REV SHEET PMIC N/A STANDARD M ICRO CIRCUIT


    OCR Scan     		PDF 32-BIT) 14060LB SB-TSI ic sj 2038 reset QML-38534 ir020

    3232c

    Abstract: No abstract text available
    Text: M EDI5C3232C D \ 32Kx32 EEPROM ELECTRONIC DESIGN& NC. 32Kx32 CMOS EEPROM Multi-Chip Module Features 32Kx32 bit CMOS Electrically Eraseable Programmable Read Only Memory • Access Times: 100,120,150, and 200ns • Individual Byte Enables • Individual Write Enables


    OCR Scan     		PDF EDI5C3232C 32Kx32 200ns EDI5C3232C four32Kx8 3232c

    csc 9803

    Abstract: QML-38534 LA4-DA BMS SYSTEM qualification CE7Y
    Text: REVISIONS LTR A DESCRIPTION DATE YR-MO-DA Add device type REV APPROVED 98-12-10_ K. A. Cottonqim A A A A A A A A A A A A A A A A A A A 35 36 37 38 39 40 41 42 43 44 45 46 47 48 49 50 51 52 53 REV A


    OCR Scan     		PDF AD14060LBF/QML-4 5962-9750702HXC AD14060LTF/QML-4 csc 9803 QML-38534 LA4-DA BMS SYSTEM qualification CE7Y

    TMPZ84C011AF-6

    Abstract: TMPZ84C011A TMPZ84C011 TDA 4511
    Text: TMPZ84C011A TOSHIBA 4. ELECTRICAL CHARACTERISTICS 4.1 M A X IM U M RATINGS ITEM SYM BO L RATING -0.5V to 7V Vcc Supply V oltage w ith respect to Vss VCC -0.5V to VCC + 0.5V VIN Input Voltage PD Pow er Dissipation TA = 85°C TSOLDER 250mW 260°C Soldering Tem perature (Soldering Time 10 sec)


    OCR Scan     		PDF TMPZ84C011A 250mW MPUZ80-401 MPUZ80-402 QFP100-P-1420B MPUZ80-403 TMPZ84C011AF-6 TMPZ84C011A TMPZ84C011 TDA 4511

    UTM ceramic RESISTOR

    Abstract: UT69R000
    Text: UNITED TECH PIELEC CENTER MRE D • <1343^7 00G2152 7 ■ UTM Military Standard Products UT69R000 Rad-Hard Microcontroller Data Sheet UNITED TECHNOLOGIES MICROELECTRONICS CENTER November 1991 □ Harvard architecture - 64K data space - 1M instruction space


    OCR Scan     		PDF 00G2152 UT69R000 16-bit 32-bit MIL-M-38510. 132-Lead 0002E11 UT69R000, UT69R000 UTM ceramic RESISTOR

    Untitled

    Abstract: No abstract text available
    Text: D C PWR-82330 ILC DATA DEVICE CORPORATION — SMART POWER 3-PHASE MOTOR DRIVE APPROX. 1/2 ACTUAL SIZE DESCRIPTION The PWR-82330 is a Smart Power 3-phase Motor Drive hybrid. The PWR82330 uses a MOSFET output stage with 100 Vdc rating, and can deliver 5A continuous, 10A peak current to the


    OCR Scan     		PDF PWR-82330 PWR-82330 PWR82330 -9/92-5M

    WD1007

    Abstract: OPTI-386WB toshiba MK134FA MK134FA WD1007A-WA2 82C391 80c206 d5655 toshiba laptop keyboard schematic 82C392
    Text: OPTÌ-386WB PC/AT Chipset 82C391 /82C392/82C206 Preliminary 82C391 /82C392 DATA BOOK Version 1.1 December 19,1990 I OPTi. Inc. 2525 Walsh Avenue, Santa Clara. CA 95051 (408) 980-8178 FAX: 408-980-8860 Disclaimer This specification is subject to change without notice. OPTi Incorporated assumes no


    OCR Scan     		PDF -386WB 82C391 /82C392/82C206) /82C392 i555533 353355s3355555535a5555 SS222 22223S WD1007 OPTI-386WB toshiba MK134FA MK134FA WD1007A-WA2 80c206 d5655 toshiba laptop keyboard schematic 82C392

    Untitled

    Abstract: No abstract text available
    Text: ^ E D I B^ctronlc D««lgnc Inc. . Â IM IO I D iF O M Â T M Features TheEDI82136Cisa1,179,648bitAsynchroriousmemofy core with transparent address and enable latches in the advanced peripheral circuitry. This device is ideally suited for all x32 and x36 bit wide, high-performance memory sub­


    OCR Scan     		PDF 32Kx36 DQ0-DQ31 EDI82136C EDI82136C12GC EDI82136C15GC EDI82136C17GC EDI82136C20GC

    Untitled

    Abstract: No abstract text available
    Text: 000 PWR-82331 and PWR-82333 ILC DATA DEVICE _ _ CORPORATION_ SMART POWER 3-PHASE MOTOR DRIVES FEATURES DESCRIPTION APPLICATIONS The PWR-82331 and PWR-82333 are 30A 3-phase motor drive hybrids. The PW R-82331 has a 200V rating and uses MOSFETs in the output stage while the


    OCR Scan     		PDF PWR-82331 PWR-82333 PWR-82333 R-82331 8233X PWR-82331/333

    Untitled

    Abstract: No abstract text available
    Text: ^E D I E D I8 2 1 3 6 C H /fif/j Performance Megabit SRAM Badronic o«ign. me. 32Kx36 Monolithic Asynchronous/Latched Address Monolithic Static RAM liF Û M Â T O Û i Features TheEDI82136Cisa1,179,648bitAsynchronousmemory core with transparent address and enable latches in the


    OCR Scan     		PDF 32Kx36 TheEDI82136Cisa1 648bitAsynchronousmemory EDI82136C, daparitydeselectconfrolforx32bitoperation EDI82136C EDI82136C12GC EDI82136C15GC EDI82136C17GC

    Untitled

    Abstract: No abstract text available
    Text: D 000 PWR-82331 and PWR-82333 ILC DATA DEVICE ^ CORPORATION _ SMART POWER 3-PHASE MOTOR DRIVES FEATURES DESCRIPTION APPLICATIONS The PWR-82331 and PWR-82333 are 30A 3-phase motor drive hybrids. The PWR-82331 has a 200V rating and uses MOSFETs in the output stage while the


    OCR Scan     		PDF PWR-82331 PWR-82333 PWR-82333 PWR-82331/333 D-1/92-5M