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    HIGH CURRENT NPN SILICON TRANSISTOR Search Results

    HIGH CURRENT NPN SILICON TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1ZMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC MOSFET、Low-side: SiC SBD Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    HIGH CURRENT NPN SILICON TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BCP68T1

    Abstract: BCP68T3 BCP69T1 SMD310
    Text: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the


    Original     		PDF BCP68T1 OT-223 r14525 BCP68T1/D BCP68T1 BCP68T3 BCP69T1 SMD310

    bcp68t1

    Abstract: BCP68T3 BCP69T1 SMD310
    Text: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the


    Original     		PDF BCP68T1 OT-223 r14525 BCP68T1/D bcp68t1 BCP68T3 BCP69T1 SMD310

    Untitled

    Abstract: No abstract text available
    Text: ON Semiconductort BCP68T1 NPN Silicon Epitaxial Transistor ON Semiconductor Preferred Device MEDIUM POWER NPN SILICON HIGH CURRENT TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial Transistor is designed for use in low voltage, high current applications. The device is housed in the


    Original     		PDF OT-223 BCP68T1 inch/1000 BCP68T3 inch/4000

    2N5038

    Abstract: No abstract text available
    Text: 2N5038 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching


    Original     		PDF 2N5038 2N5038

    2N5038

    Abstract: No abstract text available
    Text: 2N5038 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching


    Original     		PDF 2N5038 2N5038

    transistor 892

    Abstract: 2N5038 OC-90
    Text: 2N5038 HIGH CURRENT NPN SILICON TRANSISTOR • ■ STMicroelectronics PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching


    Original     		PDF 2N5038 2N5038 transistor 892 OC-90

    2N5038

    Abstract: No abstract text available
    Text: 2N5038 HIGH CURRENT NPN SILICON TRANSISTOR • ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching


    Original     		PDF 2N5038 2N5038

    BUX12

    Abstract: TRANSISTOR 023 3010 transistor 1555
    Text: BUX12 HIGH CURRENT NPN SILICON TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS ■ MOTOR CONTROL ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BUX12 is a silicon multiepitaxial planar NPN


    Original     		PDF BUX12 BUX12 TRANSISTOR 023 3010 transistor 1555

    bux10

    Abstract: transistor b 1185
    Text: BUX10 HIGH CURRENT NPN SILICON TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS ■ MOTOR CONTROL ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BUX10 is a silicon multiepitaxial planar NPN


    Original     		PDF BUX10 BUX10 transistor b 1185

    BUX40

    Abstract: No abstract text available
    Text: BUX40 HIGH CURRENT NPN SILICON TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS ■ MOTOR CONTROL ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BUX40 is a silicon multiepitaxial planar NPN


    Original     		PDF BUX40 BUX40

    Untitled

    Abstract: No abstract text available
    Text: BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS • High DC Current Gain:


    Original     		PDF BUV21 BUV21/D

    Untitled

    Abstract: No abstract text available
    Text: BUV22 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS − 250 WATTS • High DC Current Gain:


    Original     		PDF BUV22 BUV22/D

    Untitled

    Abstract: No abstract text available
    Text: BUV21 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 200 VOLTS − 250 WATTS • High DC Current Gain:


    Original     		PDF BUV21 BUV21/D

    BUV22G

    Abstract: BUV22
    Text: BUV22 SWITCHMODEt Series NPN Silicon Power Transistor This device is designed for high speed, high current, high power applications. Features http://onsemi.com 40 AMPERES NPN SILICON POWER METAL TRANSISTOR 250 VOLTS − 250 WATTS • High DC Current Gain:


    Original     		PDF BUV22 BUV22/D BUV22G BUV22

    BUX12

    Abstract: TRANSISTOR 023 3010 P003N transistor bux12
    Text: BUX12 HIGH CURRENT NPN SILICON TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS MOTOR CONTROL ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT ■ 1 2 DESCRIPTION The BUX12 is a silicon multiepitaxial planar NPN


    Original     		PDF BUX12 BUX12 TRANSISTOR 023 3010 P003N transistor bux12

    BUX41

    Abstract: No abstract text available
    Text: BUX41 HIGH CURRENT NPN SILICON TRANSISTOR • ■ ■ ■ SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS ■ MOTOR CONTROL ■ LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT 1 2 DESCRIPTION The BUX41 is a silicon multiepitaxial planar NPN


    Original     		PDF BUX41 BUX41

    by 228 v

    Abstract: DSA0015749
    Text: CYT5551HCD Central TM Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED NPN HIGH CURRENT SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT5551HCD type consists of two 2 isolated NPN high current silicon transistors packaged in an epoxy molded


    Original     		PDF CYT5551HCD OT-228 100MHz 15-March by 228 v DSA0015749

    CYT5551HCD

    Abstract: sot 228 marking
    Text: CYT5551HCD Central TM Semiconductor Corp. SURFACE MOUNT DUAL, ISOLATED NPN HIGH CURRENT SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CYT5551HCD type consists of two 2 isolated NPN high current silicon transistors packaged in an epoxy molded


    Original     		PDF CYT5551HCD OT-228 100MHz 11-August CYT5551HCD sot 228 marking

    NPN Transistor VCEO 1000V

    Abstract: transistor BUX81/9
    Text: BUX81 MECHANICAL DATA Dimensions in mm inches HIGH CURRENT HIGH SPEED HIGH POWER SILICON NPN PLANAR TRANSISTOR PostScript Picture C:\GRAPHICS\TO204AA EPS Applications The BUX81 is an epitaxial silicon NPN planar transistor that has high current and high power handling capability and


    Original     		PDF BUX81 \GRAPHICS\TO204AA BUX81 204AA 100kHz NPN Transistor VCEO 1000V transistor BUX81/9

    K83 Package

    Abstract: MPQ1050 transistor k84 MHQ2221 MPQ2221 MPQ2222 MPQ105
    Text: MPQ1050 SILICON QUAD DUAL-IN-LINE NPN SILICON QUAD DUAL-IN-LINE NPN SILICON HIGH-CURRENT SWITCHING TRANSISTOR HIGH-CURRENT SWITCHING TRANSISTOR . . . designed for high-current, high-speed switching applications. • Low Colflector-Emitter Saturation Voltage —


    OCR Scan     		PDF MPQ1050 O-116 30Vdc 500mAdc, 50mAdc) MPQ2221 MPQ2222 MHQ2221 K83 Package MPQ1050 transistor k84 MPQ2221 MPQ105

    k03d3

    Abstract: 2N3303 MPQ3303 SFT01 4PD4
    Text: MPQ3303 silicon QUAD DUAL-IN-LINE NPN SILICON ANNULAR LOW-VOLTAGE HIGH-CURRENT TRANSISTORS QUAD DUAL-IN-LINE NPN SILICON LOW VOLTAGE HIGH CURRENT SWITCHING TRANSISTORS . , . designed fo r high-current, high-speed switching, and MOS trans­ lator applications.


    OCR Scan     		PDF MPQ3303 2N3303 O-116 k03d3 2N3303 MPQ3303 SFT01 4PD4

    transistor marking 2A H

    Abstract: mitsubishi vcb 2sc4357 mitsubishi symbol marking La 4108
    Text: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL TRANSISTOR 2SC4357 FOR HIGH CURRENT DRIVE AMPLIFY APPLICATION SILICON NPN EPITAXIAL TYPE DESCRIPTION Mitsubishi 2SC4357 is a silicon NPN epitaxial type transistor designed for high collector current, for high voltage.


    OCR Scan     		PDF 2SC4357 2SC4357 500mW transistor marking 2A H mitsubishi vcb mitsubishi symbol marking La 4108

    bux40

    Abstract: TRANSISTOR J.15 C2028
    Text: rz 7 SCS-THOMSON _ BUX40 HIGH CURRENT NPN SILICON TRANSISTOR • . . . SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS . MOTOR CONTROL . LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The BUX40 is a silicon multiepitaxial planar NPN


    OCR Scan     		PDF BUX40 BUX40 300ns, TRANSISTOR J.15 C2028

    Untitled

    Abstract: No abstract text available
    Text: £Z7 SCS-THOMSON “ 7# g HIGH CURRENT NPN SILICON TRANSISTOR . SGS-THOMSON PREFERRED SALESTYPE . NPN TRANSISTOR DESCRIPTION The 2N5038 is a silicon planar multiepitaxial NPN transistors in Jedec TO-3 metal case. They are especially intended for high current and switching


    OCR Scan     		PDF 2N5038 SCG8S20 180nH