Untitled
Abstract: No abstract text available
Text: GaAs MULTIPLIER DIODES ISIS Frequency Multiplier TM MIV41001 – MIV41013 Features High Output Powers — Over 5 W at 35 GHz High Efficiency 2 and 3 Stack Options High Cut-Off Frequency Low Thermal Resistance Applications Frequency Multipliers to Beyond 110 GHz
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MIV41001
MIV41013
MIV41013-21
MIV41003-21
MIV41012-21
MIV41002-21
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diode
Abstract: band switching diode DAP236U DAP236K diodes
Text: Diodes Band switching diode DAP236U / DAP236K FExternal dimensions Units: mm High frequency diodes FApplications High frequency switching FFeatures 1) Multiple diodes with common anode configuration. 2) High reliability. Band switching diodes FConstruction
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DAP236U
DAP236K
diode
band switching diode
DAP236K
diodes
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DAN235K
Abstract: band switching diode diode DAN235E DAN235U diodes
Text: Diodes Band switching diode array DAN235E / DAN235U / DAN235K FExternal dimensions Units: mm High frequency diodes FApplications High frequency switching FFeatures 1) Multiple diodes with common cathode configuration. 2) High reliability. Band switching diodes
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DAN235E
DAN235U
DAN235K
DAN235K
band switching diode
diode
diodes
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Untitled
Abstract: No abstract text available
Text: GaAs MULTIPLIER DIODES ISIS Frequency Multiplier TM MIV41001 – MIV41013 Features ● High Output Powers — Over 5 W at 35 GHz ● High Efficiency ● 2 and 3 Stack Options ● High Cut-Off Frequency ● Low Thermal Resistance Applications ● Frequency Multipliers to Beyond 110 GHz
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MIV41001
MIV41013
MIV41013-21
MIV41003-21
MIV41012-21
MIV41002-21
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rb160l-40
Abstract: RB160L RB160L40 High frequency rectifier
Text: Diodes High frequency rectifier schottky barrier diode RB160L–40 FApplications High frequency rectification For switching power supply. FExternal dimensions Units: mm Schottky barrier diodes FFeatures 1) Small surface mounting type (PMDS) 2) High reliability
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RB160L
rb160l-40
RB160L40
High frequency rectifier
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diode
Abstract: band switching diode silicon diode switching transistor 1SS390
Text: Diodes Band switching diode New FApplications High frequency switching FExternal dimensions Units: mm High frequency diodes 1SS390 FFeatures 1) Extremely small surface mounting type. (EMD2) 2) High reliability. Band switching diodes FConstruction Silicon epitaxial planar
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1SS390
diode
band switching diode
silicon diode
switching transistor
1SS390
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alternator dual voltage 12V 24V
Abstract: 200V AUTOMOTIVE MOSFET 24v alternator regulator ic 100v input regulator 24V alternator load dump ALTERNATOR REGULATOR 14v Alternator regulator ISO7637 MAX6398 mosfet alternator
Text: Maxim > App Notes > ASICs Keywords: High switching frequency and high voltage operation Jul 17, 2007 APPLICATION NOTE 3893 High-Frequency Automotive Power Supplies Abstract: The combination of high switching frequency and high-voltage capability is difficult to achieve in IC design.
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com/an3893
MAX5073:
MAX6398:
AN3893,
APP3893,
Appnote3893,
alternator dual voltage 12V 24V
200V AUTOMOTIVE MOSFET
24v alternator regulator ic
100v input regulator
24V alternator load dump
ALTERNATOR REGULATOR 14v
Alternator regulator
ISO7637
MAX6398
mosfet alternator
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Untitled
Abstract: No abstract text available
Text: STPS20M60 Power Schottky rectifier Features • High current capability ■ Avalanche rated ■ Low forward voltage drop ■ High frequency operation A K K Description The STPS20M60D is a single diode Schottky rectifier, suited for high frequency switch mode
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STPS20M60
STPS20M60D
O-220AC
O-220AC
STPS20M60D
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2N3866
Abstract: zetex ztx327 2N2708 Zetex bfy90 Transistor 2N3866 2N2102 2N4427 2N918 BFY90 BSY55
Text: HIGH FREQUENCY TABLE 7 - NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation amplifier and oscillator applications. Reference should be made to the RF Transistors and Diodes section which contains
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2N3866
2N4427
2N2708
2N918
BFY90
OT-23
ZTX325
zetex ztx327
Zetex bfy90
Transistor 2N3866
2N2102
BSY55
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High frequency transistors
Abstract: RF diodes 2N2708 2n3570 2N918 ZT92 BFY90 2N2102 2N4036 ZT91
Text: HIGH FREQUENCY T AB LE 7 NPN SILICON PLANAR HIGH FREQUENCY TRANSISTORS The transistors shown in this table are designed for high frequency operation Am plifier and Oscillator applications. This table should be referred to in conjunction w ith the RF Diodes
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BFY90
175mW
2N918
2N2708
O1000
2N3571
2N3572
2N2102
2N4036
High frequency transistors
RF diodes
2n3570
ZT92
2N4036
ZT91
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SO-16
Abstract: 4C SOT23-4
Text: s - s AVALANCHE BREAKDOWN TVS DIODES QUICK REFERENCE GUIDE Bidirectional (Data Lines) Unidirectional (Vcc/Data Lines) I— DC/Low Frequency — High Frequency ESD/EFT ESD/EFT ESDÆFT — Low Frequency High Frequency 1 Line (SOT-23) PSOTQ3LC/24LC 1 Line Pair
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OT-23)
SO-16)
PSOTQ3/24
PSOTQ3LC/24LC
OT-23-6)
SO-14)
SO-16
4C SOT23-4
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Untitled
Abstract: No abstract text available
Text: Diodes Band Switching Diode DAP236U •Applications High frequency switching High frequency diodes •External dimensions Units: mm •Features 1)Designed for mounting on small surface areas (UMD3) 2) High reliability Band switching diodes •Construction
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DAP236U
100MHz
100MHz
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SOFT RECOVERY DIODES FD500JV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING Dimensions in mm * 2.2 ± 0.2DEPTH APPLICATION Clamp diode for GCT Thyristor High-power inverters Power supplies as high frequency rectifiers MAXIMUM RATINGS
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FD500JV-90DA
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DAN235
Abstract: tslg
Text: Diodes Band Switching Diode DAN235U •Applications •External dimensions Units: mm High frequency diodes High frequency switching •Features 1)Designed for mounting on small surface areas (UMD3) 2)High reliability •Construction Band switching diodes
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DAN235U
100MHz
DAN235
tslg
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FX HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD1000FX OUTLINE DRAWING • IF AV Average forward current. 800A • V rrm Repetitive peak reverse voltage.4500V Dimensions in mm
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FD1000FX
2000fiC
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diode BAND
Abstract: DAN235K
Text: Diodes Band Switching Diode Array DAN235K •Applications •External dimensions Units: mm High frequency diodes High frequency switching •Features 1) Designed for mounting on small surface areas (SMD3) 2)High reliability •Construction Band switching diodes
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DAN235K
100MHz
diode BAND
DAN235K
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FX-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1000FX-90 jlllllllllllp Dimensions in mm ll: Average forward current. . 800A • V rrm Repetitive peak reverse voltage. . 4500V
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FD1000FX-90
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L1047
Abstract: No abstract text available
Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FH-56 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD1000FH-56 OUTLINE DRAWING Dimensions in mm Average forward current. . 1000A • V r r m Repetitive peak reverse voltage. . 2500V, 2800V
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FD1000FH-56
L1047
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FD1500BV-90DA
Abstract: gct thyristor
Text: MITSUBISHI SOFT RECOVERY DIODES FD1500BV-90DA HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE APPLICATION Free wheel diode for GCT Thyristor High-power inverters Power supplies as high frequency rectifiers MAXIMUM RATINGS P aram eter Voltage class Unit V rrm Repetitive peak reverse voltage
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FD1500BV-90DA
100FIT
00BV-90DA
FD1500BV-90DA
gct thyristor
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD2000DU-120 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE FD2000DU-120 Average forward current. . 1700A • V r r m Repetitive peak reverse voltage. . 6000V • Q rr Reverse recovery charge. . 1500jiC
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FD2000DU-120
1500jiC
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Untitled
Abstract: No abstract text available
Text: Diodes Band Switching Diode 1SS356 •Applications High frequency switching High frequency diodes •External dimensions Units: mm CATHODE MARK n •Features 1)Designed for mounting on small surface areas (UMD2) 2)High reliability TT •Construction Silicon epitaxial planar
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1SS356
100MHz
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FV-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1000FV-90 • lF AV Average forw ard c u rre n t. . 800A • V Repetitive peak reverse voltage. . 3500 ~ 4500V
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FD1000FV-90
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI HIGH-FREQUENCY RECTIFIER DIODES FD1000FX-90 HIGH POWER, HIGH FREQUENCY, PRESS PACK TYPE OUTLINE DRAWING FD1000FX-90 ' « * lF AV Average forw ard c u rre n t. .800A • V rrm Repetitive peak reverse voltage. . 4500V
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FD1000FX-90
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A 314J
Abstract: RB160L-40 U100-P
Text: RB160L-40 Diodes High frequency rectifier schottky barrier diode R B 1 6 0 L- 4 0 •External dimensions Units: mm •Applications High frequency rectification For switching power supply. •Features 1) Small surface mounting type (PMDS) 2) High reliability
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RB160L-40
u100p
002M541
A 314J
RB160L-40
U100-P
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